APPARATUS AND METHOD FOR ATMOSPHERIC PRESSURE REACTIVE ATOM PLASMA PROCESSING FOR SHAPING OF DAMAGE FREE SURFACES
    113.
    发明公开
    APPARATUS AND METHOD FOR ATMOSPHERIC PRESSURE REACTIVE ATOM PLASMA PROCESSING FOR SHAPING OF DAMAGE FREE SURFACES 审中-公开
    DEVICE AND METHOD FOR常压反应等离子处理核损害自由成形表面

    公开(公告)号:EP1363859A1

    公开(公告)日:2003-11-26

    申请号:EP02706044.1

    申请日:2002-01-29

    发明人: CARR, Jeffrey, W.

    IPC分类号: C03B19/14

    摘要: Fabrication apparatus and methods are disclosed for shaping and finishing difficult materials with no subsurfaces damage. The apparatus and methods use an atmospheric pressure mixed gas plasma discharge as a sub-aperture polisher of, for example, fused silica and single crystal silicon, silicon carbide and other materials, In one example, workpiece material is removed at the atomic level through reaction with fluorine atoms. In this example, these reactive species are produced by a noble gas plasma from trace constituent fluorocarbons or other fluorine containing gases added to the hose argon matrix. The products of the reaction ar gas phase compounds that flow from the surface of the workpliece, exposign fresh material to the etchant without condensation and redeposition on the newly created surface. The discharge provides a stable and predictable distribution of reactive species permitting the generation of a predetermined surface by translating the plasma across the workpiece along a calculated path.

    METHOD OF MAKING A MULTILAYER ARTICLE BY ARC PLASMA DEPOSITION
    115.
    发明公开
    METHOD OF MAKING A MULTILAYER ARTICLE BY ARC PLASMA DEPOSITION 有权
    一种用于生产多层OBJECT离子弧涂的方式

    公开(公告)号:EP1165856A1

    公开(公告)日:2002-01-02

    申请号:EP00906007.0

    申请日:2000-02-07

    IPC分类号: C23C16/50 C08J7/04 C03C17/34

    摘要: According to an exemplary embodiment of the invention, a method of forming a plurality of layers on an article (110) comprises steps of generating a plasma by forming an arc between a cathode and an anode; injecting a first material comprising an organic compound into the plasma to deposit a first layer (120) on the article; injecting a second material comprising an organometallic material into the plasma to form a second layer (130) on the first layer; and injecting a third material comprising a silicon containing organic compound into the plasma to deposit a third layer (140) on the second layer. The invention also relates to an article of manufacture comprising a substrate; an interlayer disposed on the substrate; a second layer disposed on the interlayer, the second layer comprising an inorganic ultraviolet absorbing material; and a third layer disposed on the second layer, the third layer comprising an abrasion resistant material. The interlayer may comprise a polymerized organosilicon material or a polymerized hydrocarbon material, for example. The second layer may comprise a metal oxide or zinc sulfide, for example. The third layer may comprise an oxidized organosilicon material, for example.

    PLASMA PROCESSING METHODS AND APPARATUS
    116.
    发明公开
    PLASMA PROCESSING METHODS AND APPARATUS 有权
    方法和装置与等离子体处理

    公开(公告)号:EP1030788A4

    公开(公告)日:2001-02-28

    申请号:EP98960161

    申请日:1998-11-06

    发明人: SINIAGUINE OLEG

    摘要: To move an article (134) in and out of plasma (120) during plasma processing, the article (134) is rotated by a first drive (140) around a first axis (140X), and the first drive is itself rotated by a second drive (150). As a result, the article (134) enters the plasma (120) at different angles for different positions of the first axis (140X). The plasma cross section (114-0) at the level at which the plasma (120) contacts the article (134) is asymmetric so that those points on the article (134) that move at a greater linear velocity (due to being farther away from the first axis (140X) move longer distances through the plasma (120). As a result, the plasma processing time becomes more uniform for different points on the article surface. In some embodiments, two shuttles (710-1, 710-2) are provided for loading and unloading the plasma processing system. One of the shuttles (710-1) stands empty waiting to load them into the system, while the other shuttle (710-2) holds unprocessed articles (134) waiting to load them into the system. After the plasma processing terminates, the empty shuttle unloads processed articles (134) from the system, takes articles (134) away, and gets unloaded and reloaded with unprocessed articles (134). Meanwhile the other shuttle loads unprocessed articles (134) into the system and the plasma process begins. Since the plasma processing system does not wait for the first shuttle (710-1), the productivity of the system is increased.

    METHOD FOR TREATING ARTICLES WITH A PLASMA JET
    119.
    发明公开
    METHOD FOR TREATING ARTICLES WITH A PLASMA JET 失效
    METHOD FOR A SCHEIBENS与等离子射流处理

    公开(公告)号:EP0902961A1

    公开(公告)日:1999-03-24

    申请号:EP97927804.0

    申请日:1997-05-28

    IPC分类号: H01J37 C23C16 C23F4 H01L21

    摘要: A method for treating an article with a plasma jet is disclosed. The method involves rotating an article (30) with a surface (32) to be treated about an axis (Ha), wherein the rotation defines a rotation radius extending from the axis. The article surface is contacted with the plasma jet (10) to form a plasma jet footprint (11) having a predetermined dimension on the article surface. The plasma jet footprint is moved along the rotation radius in the radial direction according to a velocity profile along the rotation radius so as to apply heat to the article surface to obtain a desired temperature distribution profile on the article surface along the rotation radius. The method provides a means for controlling the temperature of the article uniformly in a temperature range from about 30 °C and 1200 °C to allow different treatment applications to be performed on the article. The control of article temperature as described allows for uniform treatment processes, such as polymer ablation, etching, deposition and thermal treatment, of the article material itself by injecting different gasses into the plasma jet.