公开(公告)号：EP1029357A2

公开(公告)日：2000-08-23

申请号：EP98956065.1

申请日：1998-11-13

申请人： ABB RESEARCH LTD.

发明人： HARRIS, Christopher ,  DANIELSSON, Erik

IPC分类号： H01L29/06 ,  H01L29/78 ,  H01L29/24

CPC分类号： H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device comprises at least one semiconductor layer (4) of SiC and a layer (8) of a refractory metal nitride separated by an insulating layer (7) being at least next to the SiC layer of SiO2. The insulating layer comprises two sub layers, namely a first sub layer (9) of SiO2 next to the SiC layer and a second sub layer (10) of Si3N4 located between the first sub layer and the metal nitride layer.

公开(公告)号：EP1009034A1

公开(公告)日：2000-06-14

申请号：EP98910573.9

申请日：1998-03-23

申请人： Li, Binghui

发明人： Li, Binghui

IPC分类号： H01L29/15 ,  H01L33/00 ,  H01L29/24 ,  H01L29/88 ,  H01S3/19

CPC分类号： H01L33/06 ,  B82Y20/00 ,  H01L29/88 ,  H01S5/34

摘要： A semiconductor quantum oscillation device, which realizes Bloch oscillation on the basis of a novel carrier injection scheme, comprises a multilayer semiconductor structure and a means for applying a voltage to said structure. The multilayer structure comprises a tunneling injection region and a pair of oscillation regions which are located on both sides of the tunneling injection region and adjacent to it. The voltage applied across the tunneling region and the pair of oscillation regions causes valence electrons to enter into the conduction band through interband tunneling in the tunneling injection region and leads to electrons and holes being injected into the pair of oscillation regions, respectively. The electrons and holes injected this way undergo quantum oscillation motion and produce far-infrared radiation. The device of the present invention will pave the way for effectively utilizing the electromagnetic spectral resource between the high-end of millimeter-wave and the low-end of far infrared.

摘要翻译： 基于新型载流子注入方案实现Bloch振荡的半导体量子振荡器件包括多层半导体结构和向所述结构施加电压的装置。 多层结构包括隧道注入区域和位于隧道喷射区域的两侧并与其相邻的一对振荡区域。 施加在隧道区域和一对振荡区域上的电压使得电子通过隧道射入区域中的带间隧道进入导带，并导致电子和空穴分别注入到该对振荡区域中。 注入的电子和空穴经受量子振荡运动并产生远红外辐射。 本发明的装置将为有效利用毫米波高端与远红外线低端之间的电磁光谱资源铺平道路。

公开(公告)号：EP0971394A4

公开(公告)日：2000-01-12

申请号：EP98936742

申请日：1998-08-11

申请人： MATSUSHITA ELECTRIC IND CO LTD

发明人： KITABATAKE MAKOTO

IPC分类号： H01L21/04 ,  H01L21/78 ,  H01L29/24 ,  H01L29/267 ,  H01L29/78 ,  H01L21/20 ,  H01L21/203 ,  H01L21/205 ,  H01L21/331 ,  H01L21/336 ,  H01L29/73 ,  H01L29/739

CPC分类号： H01L29/1608 ,  H01L21/7813 ,  H01L29/165 ,  H01L29/267 ,  H01L29/66068 ,  H01L29/7802 ,  H01L29/7809

摘要： A MOS transistor is composed of a semiconductor substrate 11 in which a Si thin film 13 is heteroepitaxially grown on a surface of an SiC substrate 12. A source electrode 38 and a drain electrode 34 are so provided that the above SiC substrate 12 is disposed in an output current path. According to this construction, a semiconductor device with a high dielectric strength and current-carrying capacity is achieved.

摘要翻译： MOS晶体管由在SiC衬底12的表面上异质外延生长Si薄膜13的半导体衬底11构成。源电极38和漏电极34设置成将上述SiC衬底12设置在 输出电流路径。 根据该结构，实现了具有高介电强度和载流能力的半导体器件。

公开(公告)号：EP0886883A1

公开(公告)日：1998-12-30

申请号：EP97915312

申请日：1997-02-27

申请人： SIEMENS AG

发明人： MITLEHNER HEINZ ,  STOISIEK MICHAEL

IPC分类号： H01L27/00 ,  H01L27/04 ,  H01L27/085 ,  H01L29/12 ,  H01L29/20 ,  H01L29/24 ,  H01L29/739 ,  H01L29/78 ,  H01L29/808 ,  H01L29/866 ,  H01L27/06 ,  H01L29/772

CPC分类号： H01L29/1608 ,  H01L27/0688 ,  H01L27/085 ,  H01L29/2003 ,  H01L29/8083 ,  H03K17/567

摘要： A p-n junction (7) is connected between two terminals (2, 3) and comprises between two semiconductor regions (6, 8) a semiconductor with a breakdown field intensity of at least 106 V/cm. A channel region (9) adjoining the p-n junction is provided in a first one of the two semiconductor regions and is connected in series, between the two terminals, to a silicon device (4). The depletion zone (70) of the p-n junction bears the off-state voltage when the silicon device is off-state. A MOSFET is preferably used as the silicon device.

公开(公告)号：EP0748520B1

公开(公告)日：1998-12-16

申请号：EP95911267.3

申请日：1995-02-24

申请人： SIEMENS AKTIENGESELLSCHAFT

发明人： MITLEHNER, Heinz ,  STEPHANI, Dietrich ,  TIHANYI, Jenö

IPC分类号： H01L29/10 ,  H01L29/24 ,  H01L29/78 ,  H01L29/739 ,  H01L21/04

CPC分类号： H01L29/7802 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/41766 ,  H01L29/66068 ,  H01L29/7396 ,  H01L29/7397 ,  H01L29/7813

摘要： The MIS structure contains an n-drift region (1), a base region (3) arranged on one surface of the drift region (1), an ion-implanted n+ source region (2) in the base region (3), a source electrode (S) short-circuiting the base (3) and source regions (2) and a gate electrode (6) to control the resistance of a channel region (32) of the base region (3) via an insulator region (5). The base region (3) is more highly doped in an ion-implanted p+ partial region (33) beneath the entire source region (2) than in the channel region (32).

公开(公告)号：EP0468814B1

公开(公告)日：1994-09-28

申请号：EP91306860.7

申请日：1991-07-26

申请人： KABUSHIKI KAISHA TOSHIBA

发明人： Ohba, Yasuo, c/o Intellectual Property Division

IPC分类号： H01S3/19 ,  H01L33/00 ,  H01L29/24 ,  H01L29/73

CPC分类号： H01L33/26 ,  B82Y20/00 ,  H01L33/002 ,  H01S5/32 ,  H01S5/34

公开(公告)号：EP0209648B1

公开(公告)日：1990-03-07

申请号：EP86105672.9

申请日：1986-04-24

申请人： THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

发明人： Bunshah, Rointan F. ,  Parsons, James D. ,  Stafsudd, Oscar M.

IPC分类号： H01L29/24

CPC分类号： H01L29/1608 ,  Y10T428/263

公开(公告)号：EP0350770A2

公开(公告)日：1990-01-17

申请号：EP89112193.1

申请日：1989-07-04

申请人： TDK Corporation

发明人： Iwaya, Shoichi ,  Masumura, Hitoshi ,  Taguchi, Haruo ,  Hamada, Munemitsu ,  Sogabe, Tomohiro ,  Takahashi, Shigeya ,  Satoh, Hiroyuki

IPC分类号： C04B35/46 ,  H01L29/24 ,  H01C7/00

CPC分类号： C04B35/47 ,  C04B35/472

摘要： A semiconductive ceramic composition capable of permitting its resistance-temperature characteristics and resistance to be controlled as desired and a firing temperature of the composition to be lowered to a degree sufficient to facilitate the mass-production at a low cost. The composition contains a main component consisting of SrO, PbO and Ti0 2 and is subjected to firing in an oxidizing atmosphere. The composition may contain at least one of Si0 2 and M as a minor component. A variation in amount of the main and minor components permits characteristics and properties of the composition to be varied as desired.

摘要翻译： 一种半导电陶瓷组合物，其能够使其电阻温度特性和耐受性根据需要进行控制，并将组合物的烧成温度降低至足以有利于大量生产的成本。 该组合物含有由SrO，PbO和TiO 2组成的主要成分，并在氧化气氛中进行烧成。 组合物可以含有SiO 2和M中的至少一种作为次要组分。 主要和次要组分的量的变化允许组合物的特征和性质根据需要变化。

公开(公告)号：EP0322161A2

公开(公告)日：1989-06-28

申请号：EP88311912.5

申请日：1988-12-16

申请人： FUJITSU LIMITED

发明人： Furumura, Yuji ,  Mieno, Fumitake ,  Eshita, Takashi ,  Itoh, Kikuo ,  Doki, Masahiko

IPC分类号： H01L29/41 ,  H01L29/24

CPC分类号： H01L29/456

摘要： An excellent barrier layer (13A, 13B) can be formed by silicon carbide between a silicon substrate (11) or layer and a metal layer because silicon carbide has many properties similar to those of silicon, has a very slow diffusion rate of a metal through the silicon carbide, or prevents a diffusion of a metal into the silicon, and can be deposited by CVD which has an advantage of a good coverage over a step portion such as a contact window.

摘要翻译： 由于碳化硅具有与硅类似的许多性质，因此在硅衬底（11）或层与金属层之间可以由碳化硅形成优异的阻挡层（13A，13B），具有非常缓慢的金属扩散速率 碳化硅，或防止金属扩散到硅中，并且可以通过CVD沉积，其具有比诸如接触窗口的台阶部分更好的覆盖的优点。

公开(公告)号：EP0165027A3

公开(公告)日：1987-08-19

申请号：EP85304050

申请日：1985-06-07

申请人： STAUFFER CHEMICAL COMPANY

发明人： Schachter, Rozalie ,  Viscogliosi, Marcello ,  Bunz, Lewis Andrew

IPC分类号： H01L29/78 ,  H01L29/24 ,  H01L21/314 ,  H01L21/34 ,  H01L21/363 ,  H01L29/80

CPC分类号： H01L51/0541 ,  H01L21/02422 ,  H01L21/02521 ,  H01L21/02581 ,  H01L21/314 ,  H01L29/24 ,  H01L29/4908 ,  H01L29/517 ,  H01L29/518 ,  H01L29/8126 ,  H01L51/001 ,  H01L51/0508 ,  H01L51/0512 ,  H01L51/0545

摘要： A thin film transistor characterised in that it comprises, as a switched semiconductor portion thereof, a thin film comprising MP x wherein M represents at least one alkali metal; P represents at least one pnictide; and x ranges from 15 to infinity is disclosed. A process for the production of a transistor characterised in that it comprises vacuum plasma sputtering of successive layers in contact of a semiconductor comprising MP x , wherein M represents at least one alkali metal; P represents at least one pnictide; and x ranges from 15 to infinity; and an insulating layer comprising a pnictide is also disclosed. An insulated semidconductor device characterised in that it comprises as the switched semiconductor portion thereof a layer comprising MP., wherein M represents at least one alkali metal; P represents at least one pnictide; and x ranges from 15 to infinity; and an insulating layer comprising a pnictide is further disclosed. Referring to the accompanying illustrative diagram, a Schottlky barrier thin film field effect transistor in accordance with the present invention may comprise a glass substrate (20), a high pnictide polypnictide semiconductor (22) of high resistivity, a metal (approximately 1 % Ni) doped layer (24) of the same semiconductor material of lower resistivity and metal source (26), gate (28) and drain (30) contacts deposited on layer (24). The present invention provides advances over the prior art.

摘要翻译： 一种薄膜晶体管，其特征在于，其包含作为其切换半导体部分的包含MPx的薄膜，其中M表示至少一种碱金属; P代表至少一个pnictide; 并且公开了从15到无穷大的x。 一种用于制造晶体管的方法，其特征在于，其包括与包含MPx的半导体接触的连续层的真空等离子体溅射，其中M表示至少一种碱金属; P表示至少一个pnictide，x的范围从15到无穷大; 并且还公开了包含pnictide的绝缘层。 一种绝缘半导体器件，其特征在于，其包含作为其开关半导体部分的包含MPx的层，其中M表示至少一种碱金属; P： 代表至少一个pnictide; 并且x的范围为15至无穷大，并且还公开了包含pnictide的绝缘层。 参考附图，根据本发明的肖特基势垒薄膜场效应晶体管可以包括玻璃衬底（20），高电阻率的高电阻聚合半导体（22），金属（约1％Ni） 掺杂层（24），其沉积在层（24）上的较低电阻率的金属源（26），栅极（28）和漏极（30）的相同半导体材料。 本发明提供了先有技术的进步。