公开(公告)号：EP3019569A4

公开(公告)日：2017-05-03

申请号：EP14823844

申请日：2014-07-01

Applicant: BASF SE

Inventor： REICHARDT ROBERT ,  KALLER MARTIN ,  LAUTER MICHAEL ,  LI YUZHUO ,  KLIPP ANDREAS

IPC: C09G1/02 ,  C09G1/00 ,  C09G1/04 ,  H01L21/02 ,  H01L21/321

CPC classification number: C09K3/1463 ,  C09G1/02 ,  H01L21/3212

Abstract: A chemical-mechanical polishing (CMP) composition is provided comprising (A) one or more compounds selected from the group of benzotriazole derivatives which act as corrosion inhibitors and (B) inorganic particles, organic particles, or a composite or mixture thereof. The invention also relates to the use of certain compounds selected from the group of benzotriazole derivatives as corrosion inhibitors, especially for increasing the selectivity of a chemical mechanical polishing (CMP) composition for the removal of tantalum or tantalum nitride from a substrate for the manufacture of a semiconductor device in the presence of copper on said substrate.

Abstract translation: 提供化学机械抛光（CMP）组合物，其包含（A）一种或多种选自苯并三唑衍生物（用作腐蚀抑制剂）和（B）无机颗粒，有机颗粒或其复合物或混合物的化合物。 本发明还涉及选自苯并三唑衍生物的某些化合物作为腐蚀抑制剂的用途，尤其是用于提高化学机械抛光（CMP）组合物用于从基底去除钽或氮化钽的选择性，用于制造 在所述衬底上存在铜的情况下的半导体器件。

公开(公告)号：EP2812911A4

公开(公告)日：2015-08-12

申请号：EP13746024

申请日：2013-01-25

Applicant: BASF SE ,  BASF SCHWEIZ AG

Inventor： LI YUZHUO ,  NOLLER BASTIAN MARTEN ,  LAUTER MICHAEL ,  LANGE ROLAND

IPC: H01L21/304 ,  C09G1/00 ,  H01L21/302 ,  H01L21/461 ,  H01L21/463

CPC classification number: C09G1/02 ,  C09G1/18 ,  C09K3/1463 ,  H01L21/30625 ,  H01L21/31053

公开(公告)号：EP2499210A4

公开(公告)日：2015-04-29

申请号：EP10829604

申请日：2010-11-10

Applicant: BASF SE

Inventor： LAUTER MICHAEL ,  RAMAN VIJAY IMMANUEL ,  LI YUZHUO ,  VENKATARAMAN SHYAM SUNDAR ,  SHEN DANIEL KWO-HUNG

IPC: C09G1/02 ,  C09G1/16 ,  C09K3/14

CPC classification number: C09G1/02 ,  C09K3/1409 ,  C09K3/1463 ,  H01L21/31053

公开(公告)号：EP2742103A4

公开(公告)日：2015-03-25

申请号：EP12819882

申请日：2012-07-30

Applicant: BASF SE

Inventor： NOLLER BASTIAN MARTEN ,  DRESCHER BETTINA ,  GILLOT CHRISTOPHE ,  LI YUZHUO ,  GAO NING

IPC: H01L21/306 ,  C09G1/02 ,  C09K3/14

CPC classification number: H01L21/30625 ,  C09G1/02 ,  C09K3/1463 ,  C23F3/00 ,  H01L21/02024 ,  H01L21/31053 ,  H01L21/3212

公开(公告)号：EP2753670A4

公开(公告)日：2015-02-25

申请号：EP12830462

申请日：2012-09-04

Applicant: BASF SE

Inventor： LI YUZHUO ,  LAUTER MICHAEL ,  LANGE ROLAND ,  GAO NING

IPC: C09G1/02

CPC classification number: C09G1/02 ,  C09G1/00 ,  C09K13/00 ,  C23F1/00 ,  H01L21/30625 ,  H01L21/31053

公开(公告)号：EP2625241A4

公开(公告)日：2014-04-23

申请号：EP11830275

申请日：2011-10-04

Applicant: BASF SE

Inventor： SCHMITT CHRISTINE ,  KARPOV ANDREY ,  ROSOWSKI FRANK ,  BRANDS MARIO ,  LI YUZHUO

IPC: C09G1/02 ,  H01L21/306 ,  H01L21/321

CPC classification number: H01L21/30625 ,  C09G1/02 ,  H01L21/3212

公开(公告)号：EP2625237A4

公开(公告)日：2014-03-19

申请号：EP11830273

申请日：2011-10-04

Applicant: BASF SE

Inventor： DRESCHER BETTINA ,  NOLLER BASTIAN MARTEN ,  SCHMITT CHRISTINE ,  SUGIHARTO ALBERT BUDIMAN ,  LI YUZHUO

IPC: C09G1/02 ,  C09K3/14 ,  H01L21/306 ,  H01L21/321

CPC classification number: C09K13/04 ,  C09G1/02 ,  C09K3/1409 ,  C09K3/1463 ,  C09K13/06 ,  H01L21/30625 ,  H01L21/3212

Abstract: A chemical mechanical polishing (CMP) composition Abstract Use of a chemical mechanical polishing (CMP) composition comprising (A) inorganic particles, organic particles, or a mixture thereof, (B) a heteropolyacid or a salt thereof, (C) a salt comprising chloride, fluoride, bromide, or a mixture thereof as anion, and (D) an aqueous medium, for polishing a substrate comprising a self-passivating metal, germanium, nickel phosphorous (NiP), or a mixture thereof.

公开(公告)号：EP2613910A4

公开(公告)日：2017-12-13

申请号：EP11823141

申请日：2011-09-06

Applicant: BASF SE

Inventor： LI YUZHUO ,  VENKATARAMAN SHYAM SUNDAR ,  PINDER HARVEY WAYNE

IPC: B24B37/04 ,  C09G1/02 ,  C09K3/14

CPC classification number: H01L21/30625 ,  B24B37/044 ,  C09G1/02 ,  C09K3/1463 ,  C11D3/14 ,  C11D3/3707 ,  C11D3/3723 ,  C11D3/3773 ,  C11D3/3776 ,  C11D7/20 ,  C11D11/0047 ,  H01L21/31053

Abstract: CMP process for substrates containing silicon oxide dielectric films and polysilicon and/or silicon nitride films comprising the steps of (1) contacting the substrate with an aqueous composition containing (A) abrasive particles which are positively charged when dispersed in an aqueous medium having a pH in the range of from 3 to 9; (B) a water-soluble or water-dispersible linear or branched alkylene oxide homopolymer or copolymer; and (C) a water-soluble or water-dispersible polymer selected from (c1) aliphatic and cycloaliphatic poly(N-vinylamide) homopolymers and copolymers, (c2) homopolymers and copolymers of acrylamide monomers of the general formulas I and II: H2C=C(-R)-C(=0)-N(-R1)(-R2) (I), H2C=C(-R)-C(=0)-R3 (II), wherein the variables have the following meaning R hydrogen atom, fluorine atom, chlorine atom, nitrile group, or organic residue; R1 and R2 hydrogen atom or organic residue; R3 saturated N-heterocyclic ring; (c3) cationic polymeric flocculants; and (c4) mixtures thereof; (2) polishing the substrate until the silicon oxide dielectric film is removed and the polysilicon and/or silicon nitride film is or are exposed exposed.

公开(公告)号：EP2539411A4

公开(公告)日：2017-11-15

申请号：EP11744334

申请日：2011-01-19

Applicant: BASF SE

Inventor： LI YUZHUO ,  WANG KE

IPC: H01L21/321 ,  C09G1/02 ,  C09K3/14 ,  H01L21/768

CPC classification number: H01L21/3212 ,  C09G1/02 ,  C09K3/1409 ,  C09K3/1463

Abstract: A chemical-mechanical polishing composition comprising: (a) at least one type of abrasive particles; (b) at least two oxidizing agents; (c) at least one pH adjusting agent; and (d) deionized water; (e) optionally comprising at least one antioxidant, and a method for the chemical-mechanical planarization of a substrate containing at least one copper layer, at least one ruthenium layer, and at least one tantalum layer comprising the steps of (1) providing the said chemical-mechanical polishing composition; (2) contacting the substrate surface to be polished with the chemical-mechanical polishing composition and a polishing pad; and (3) chemically and mechanically polishing the substrate surface by way of moving the polishing pad relative to the substrate.

公开(公告)号：EP2507332A4

公开(公告)日：2017-08-02

申请号：EP10832737

申请日：2010-11-25

Applicant: BASF SE

Inventor： RAMAN VIJAY IMMANUEL ,  LI YUZHUO ,  BRANDS MARIO ,  LAN YONGQING ,  RUSHING KENNETH ,  RAMJI KARPAGAVALLI

IPC: C09G1/02 ,  B01J13/14 ,  C09K3/14 ,  H01L21/321

CPC classification number: H01L21/3212 ,  C09G1/02 ,  C09K3/1436 ,  C09K3/1463