公开(公告)号：EP0402867A2

公开(公告)日：1990-12-19

申请号：EP90111110.4

申请日：1990-06-12

申请人： SEL SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人： Yamazaki, Shunpei ,  Hirose, Naoki ,  Kadono, Masaya ,  Ishida, Noriya ,  Ito, Kenji ,  Takayama, Toru ,  Arai, Yasuyuki

IPC分类号： H01J37/32 ,  H05H1/46

CPC分类号： H01J37/32449 ,  H01J37/32192 ,  H01J37/3244

摘要： A microwave-assisted plasma processing apparatus has a reaction chamber in which a substrate holder (13) is provided to support a substrate (1) to be treated. The holder is formed congruent with the inside of reaction chamber and located to substantially separate a reaction space (19) in the reaction chamber save for a narrow clearance therebetween through which exhausted gas passes from said reaction space into said auxiliary space. By this strucure, high density plasmas can be formed in the reaction chamber without substantial loss of input microwave energy.

摘要翻译： 微波辅助等离子体处理装置具有反应室，在该反应室中设置有用于支撑待处理的基板（1）的基板支架（13）。 保持器与反应室的内部形成为一致并且被设置成基本上分离反应室中的反应空间（19），除了其间的窄间隙，排出的气体从所述反应空间通过所述反应空间进入所述辅助空间。 通过这种结构，可以在反应室中形成高密度等离子体，而不会大量损失输入的微波能量。

公开(公告)号：EP2259300A3

公开(公告)日：2017-08-16

申请号：EP10176959.4

申请日：2004-10-19

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Goto, Yuugo ,  Fukumoto, Yumiko ,  Takayama, Toru ,  Maruyama, Junya ,  Tsurume, Takuya

IPC分类号： H01L21/762 ,  H01L21/84

摘要： A method for manufacturing a semiconductor device, comprising the steps of: forming a peeling layer containing an element and a terminal electrode over a first substrate; peeling the peeling layer and the terminal electrode from the first substrate; pasting a second substrate to the peeling layer and the terminal electrode with an adhesive material; and pressure-bonding an FPC to the terminal electrode in which a circumference is covered with a protective layer.

摘要翻译： 一种制造半导体器件的方法，包括以下步骤：在第一衬底上形成含有元件和端电极的剥离层; 从第一基板剥离剥离层和端子电极; 用粘合材料将第二衬底粘贴到剥离层和端子电极上; 并将FPC压接到其周围被保护层覆盖的端子电极。

公开(公告)号：EP1426813B1

公开(公告)日：2013-08-21

申请号：EP03026735.5

申请日：2003-11-21

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Yamazaki, Shunpei ,  Takayama, Toru ,  Tsurume, Takuya ,  Goto, Yuugo

IPC分类号： G02F1/1362 ,  H01L21/84 ,  H01L27/12 ,  H05B33/12

CPC分类号： H01L27/1266 ,  G02F1/1362 ,  H01L21/0212 ,  H01L21/022 ,  H01L21/3127 ,  H01L27/1214 ,  H01L27/14683 ,  H01L27/3244 ,  H01L51/003 ,  H01L51/5253 ,  H01L51/56 ,  H01L2227/326 ,  H01L2251/5338 ,  H05B33/04

摘要： A semiconductor device that has the structure that is capable of preventing moisture, oxygen, or the like, from outside from penetrating, in addition to the structure that is being thin, lightweight, flexible and having a curbed surface. In the present invention, the structure that is thin, lightweight, flexible, and that has a curved surface, moreover, that is capable of preventing moisture, oxygen, or the like, from outside from penetrating is realized by means that a structure is formed in which a device formation layer is covered by a fluoroplastic film and by means that TFTs included in a device formation layer is formed of an island-like semiconductor film.

公开(公告)号：EP1006589B1

公开(公告)日：2012-04-11

申请号：EP99124230.6

申请日：1999-12-03

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Yamazaki, Shunpei ,  Ohtani, Hisashi ,  Suzawa, Hideomi ,  Takayama, Toru

IPC分类号： H01L21/28 ,  H01L21/77 ,  H01L27/12 ,  G02F1/1368 ,  H01L29/49 ,  H01L29/786

CPC分类号： H01L29/78621 ,  G02F1/1368 ,  G02F2001/136245 ,  G02F2202/105 ,  H01L21/28061 ,  H01L27/124 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78624 ,  H01L29/78627 ,  H01L2029/7863

公开(公告)号：EP2256817A2

公开(公告)日：2010-12-01

申请号：EP10009810.2

申请日：2000-04-11

申请人： Semiconductor Energy Laboratory Co, Ltd.

发明人： Shunpei, Yamazaki ,  Koyama, Jun ,  Takayama, Toru ,  Hamantani, Toshiji

IPC分类号： H01L29/786 ,  H01L21/336 ,  H01L29/423 ,  H01L29/49 ,  G02F1/1362

CPC分类号： G02F1/13454 ,  G02F1/136286 ,  G02F1/1368 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/124 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78627 ,  H01L29/78645 ,  H01L29/78684

摘要： The invention primarily provides gate electrodes and gate wirings permitting large-sized screens for active matrix-type display devices, wherein, in order to achieve this object, the construction of the invention is a semiconductor device having, on the same substrate, a pixel TFT provided in a display region and a driver circuit TFT provided around the display region, wherein the gate electrodes of the pixel TFT and the driver circuit TFT are formed from a first conductive layer, the gate electrodes are in electrical contact through connectors with gate wirings formed from a second conductive layer, and the connectors are provided outside the channel-forming regions of the pixel TFT and the driver circuit TFT.

公开(公告)号：EP2256807A2

公开(公告)日：2010-12-01

申请号：EP10009803.7

申请日：2003-12-19

申请人： Semiconductor Energy Laboratory Co, Ltd.

发明人： Nishi, Kazuo ,  Takayama, Toru ,  Goto, Yuugo

IPC分类号： H01L27/12 ,  H01L21/84 ,  H01L21/336 ,  H01L29/786 ,  H01L21/20 ,  H01L27/146

CPC分类号： H01L27/1266 ,  H01L27/1214 ,  H01L27/1218 ,  H01L27/1222 ,  H01L27/1255 ,  H01L27/1446 ,  H01L29/66757 ,  H01L29/78675 ,  H01L2221/68368 ,  H01L2224/05001 ,  H01L2224/05008 ,  H01L2224/05024 ,  H01L2224/05548 ,  H01L2224/05569 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05669 ,  H01L2224/16225 ,  H01L2924/00014 ,  H01L2224/05599

摘要： The present invention is characterized by forming a metal film, an insulating film, and an amorphous semiconductor film in sequence over a first substrate; crystallizing the metal oxide film and the amorphous semiconductor film; forming a first semiconductor element by using the crystallized semiconductor film as an active region; attaching a support to the first semiconductor element by using an adhesive; causing separation between the metal film and the insulating film; attaching a second substrate to the separated insulating film; separating the support by removing the first adhesive; forming an amorphous semiconductor film over the first semiconductor element; and forming a second semiconductor element using the amorphous semiconductor film as an active region.

公开(公告)号：EP1437777A3

公开(公告)日：2010-11-17

申请号：EP03028484.8

申请日：2003-12-12

申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人： Maruyama, Junya ,  Takayama, Toru ,  Ohno, Yumiko

IPC分类号： H01L51/20 ,  H01L21/00

CPC分类号： H01L51/524 ,  H01L51/5259 ,  H01L51/56

摘要： It is an object of the present invention to provide a light emitting device having a structure wherein oxygen and moisture are prevented from reaching to the light emitting device, and to provide a manufacturing method thereof. It is another object of the present invention to seal a light emitting device in fewer steps without encapsulating a desiccant.
The present invention provides a structure in which a pixel region 13 is surrounded by a first sealing material (having higher viscosity than a second sealing material) 16 including a spacer (filler, minute particles and/or the like) which maintains a gap between the two substrates, filled with a few drops of the transparent second sealing material 17a which is spread in the region; and sealed by using the first sealing material 16 and the second sealing material 17.

公开(公告)号：EP1026752B1

公开(公告)日：2008-07-09

申请号：EP00201135.1

申请日：1994-06-27

申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人： Zhang, Hongyong ,  Takayama, Toru ,  Takemura, Yasuhiko ,  Miyanagi, Akiharu

IPC分类号： H01L29/786 ,  H01L21/205 ,  H01L21/20

CPC分类号： H01L21/02672 ,  H01L21/02532 ,  H01L21/02686 ,  H01L21/2026 ,  H01L29/78675

摘要： A semiconductor device is shown to have a crystalline semiconductor film on a substrate. The crystal growth of the semiconductor film is arranged to occur in a direction roughly parallel to one surface of the substrate, the direction of the crystal growth roughly matching a direction of an axis &lang&111&rang&. The direction of the crystal growth roughly matches a direction of migration of a carrier in the semiconductor device. Preferably the direction of crystal growth has a higher elective conductivity than the other directions and can match a direction of a carrier flowing in a channel of the transistor. The semiconductor device may be located in an intermediate region of the crystal growth of the semiconductor film.

公开(公告)号：EP1426813A3

公开(公告)日：2008-06-04

申请号：EP03026735.5

申请日：2003-11-21

申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人： Yamazaki, Shunpei ,  Takayama, Toru ,  Tsurume, Takuya ,  Goto, Yuugo

IPC分类号： G02F1/1362 ,  H01L21/84 ,  H01L27/12 ,  H05B33/12

CPC分类号： H01L27/1266 ,  G02F1/1362 ,  H01L21/0212 ,  H01L21/022 ,  H01L21/3127 ,  H01L27/1214 ,  H01L27/14683 ,  H01L27/3244 ,  H01L51/003 ,  H01L51/5253 ,  H01L51/56 ,  H01L2227/326 ,  H01L2251/5338 ,  H05B33/04

摘要： A semiconductor device that has the structure that is capable of preventing moisture, oxygen, or the like, from outside from penetrating, in addition to the structure that is being thin, lightweight, flexible and having a curbed surface. In the present invention, the structure that is thin, lightweight, flexible, and that has a curved surface, moreover, that is capable of preventing moisture, oxygen, or the like, from outside from penetrating is realized by means that a structure is formed in which a device formation layer is covered by a fluoroplastic film and by means that TFTs included in a device formation layer is formed of an island-like semiconductor film.

公开(公告)号：EP1786037A2

公开(公告)日：2007-05-16

申请号：EP07002100.1

申请日：2000-04-11

申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人： Yamazaki, Shunpei ,  Koyama, Jun ,  Takayama, Toru ,  Hamatani, Toshiji

IPC分类号： H01L27/12 ,  H01L21/84 ,  H01L29/49 ,  G02F1/1362 ,  H01L29/423 ,  H01L29/786

CPC分类号： G02F1/13454 ,  G02F1/136286 ,  G02F1/1368 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/124 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78627 ,  H01L29/78645 ,  H01L29/78684

摘要： The invention primarily provides gate electrodes and gate wirings permitting large-sized screens for active matrix-type display devices, wherein, in order to achieve this object, the construction of the invention is a semiconductor device having, on the same substrate, a pixel TFT provided in a display region and a driver circuit TFT provided around the display region, wherein the gate electrodes of the pixel TFT and the driver circuit TFT are formed from a first conductive layer, the gate electrodes are in electrical contact through connectors with gate wirings formed from a second conductive layer, and the connectors are provided outside the channel-forming regions of the pixel TFT and the driver circuit TFT.

摘要翻译： 本发明主要提供允许用于有源矩阵型显示装置的大尺寸屏幕的栅极电极和栅极布线，其中为了实现该目的，本发明的结构是在同一基板上具有像素TFT 设置在显示区域和设置在显示区域周围的驱动电路TFT，其中像素TFT和驱动电路TFT的栅电极由第一导电层形成，栅电极通过与形成的栅极布线的连接器电接触 并且连接器设置在像素TFT和驱动电路TFT的沟道形成区域的外侧。