POLISHING COMPOSITIONS AND METHODS OF USING SAME

    公开(公告)号:EP3670621A1

    公开(公告)日:2020-06-24

    申请号:EP19173321.1

    申请日:2019-05-08

    IPC分类号: C09G1/02

    摘要: This disclosure relates to a polishing composition that includes at least one abrasive; at least one nitride removal rate reducing agent, an acid or a base; and water. The at least one nitride removal rate reduce agent can include a hydrophobic portion containing a C 12 to C 40 hydrocarbon group; and a hydrophilic portion containing at least one group selected from the group consisting of a sulfinite group, a sulfate group, a sulfonate group, a carboxylate group, a phosphate group, and a phosphonate group; in which the hydrophobic portion and the hydrophilic portion are separated by zero to ten alkylene oxide groups. The polishing composition can have a pH of about 2 to about 6.5.

    POLISHING COMPOSITIONS AND METHODS OF USING SAME

    公开(公告)号:EP3670620A1

    公开(公告)日:2020-06-24

    申请号:EP19172460.8

    申请日:2019-05-03

    IPC分类号: C09G1/02

    摘要: This disclosure relates to a polishing composition that includes at least one abrasive; at least one nitride removal rate reducing agent, an acid or a base; and water. The at least one nitride removal rate reduce agent can include a hydrophobic portion and a hydrophilic portion; in which the hydrophobic portion includes a C 12 to C 40 hydrocarbon group and is separated by zero to ten alkylene oxide groups from the hydrophilic portion. The polishing composition has a pH of about 2 to about 6.5, and can have a ratio of a removal rate for a silicon oxide to a removal rate for a silicon nitride of at least about 3:1 when polishing a patterned wafer comprising at least silicon nitride patterns overlayed with at least silicon oxide.