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409 条记录 (耗时 0.011 秒)

    COMPENSATION OF IMAGING DEVIATIONS IN A PARTICLE-BEAM WRITER USING A CONVOLUTION KERNEL
    12.
    发明公开
    COMPENSATION OF IMAGING DEVIATIONS IN A PARTICLE-BEAM WRITER USING A CONVOLUTION KERNEL 审中-公开
    补偿粒子束的RECORDER图片版本的使用合并CORE

    公开(公告)号：EP2927748A3

    公开(公告)日：2015-12-30

    申请号：EP15175372.0

    申请日：2015-07-06

    申请人： IMS Nanofabrication AG

    发明人： Platzgummer, Elmar

    IPC分类号： G03F7/20 ,  H01J37/317 ,  H01J37/302

    CPC分类号： H01J37/3177 ,  G06F17/5072 ,  G06F17/5081 ,  H01J37/045 ,  H01J37/09 ,  H01J37/3026 ,  H01J37/3175 ,  H01J2237/043 ,  H01J2237/3175 ,  H01J2237/31764

    摘要： An exposure pattern is computed which is used for exposing a desired pattern on a target in a charged-particle multi-beam processing apparatus so as to match a reference writing tool, possible of different type and/or for compensating a deviation of the imaging from a pattern definition device onto the target from a desired value of critical dimension along at least one direction in the image area on the target: The desired pattern (160) is provided as a graphical representation suitable for the reference tool, such as a raster graphics (161), on the image area on the target. A convolution kernel (162) is used which describes a mapping from an element of the graphical representation to a group of pixels which is centered around a nominal position of said element. A nominal exposure pattern is calculated by convolution of the graphical representation with the convolution kernel, said nominal exposure pattern being suitable to create a nominal dose distribution on the target when exposed with the processing apparatus.

    LITHOGRAPHY SYSTEM AND METHOD FOR PROCESSING A TARGET, SUCH AS A WAFER
    14.
    发明公开
    LITHOGRAPHY SYSTEM AND METHOD FOR PROCESSING A TARGET, SUCH AS A WAFER 审中-公开
    光刻系统和方法处理的目的地，例如晶片

    公开(公告)号：EP2823361A2

    公开(公告)日：2015-01-14

    申请号：EP13708799.5

    申请日：2013-03-08

    申请人： Mapper Lithography IP B.V.

    发明人： VERGEER, Niels

    IPC分类号： G03F9/00 ,  H01J37/304

    CPC分类号： G03F9/00 ,  B82Y10/00 ,  B82Y40/00 ,  G03F9/7088 ,  H01J37/3045 ,  H01J37/3177 ,  H01J2237/30438

    摘要： A method for operating a target processing system for processing a target (23) on a chuck (13), the method comprising providing at least a first chuck position mark (27) and a second chuck position mark (28) on the chuck (13); providing an alignment sensing system (17) arranged for detecting the first and second chuck position marks (27, 28), the alignment sensing system (17) comprising at least a first alignment sensor (61) and a second alignment sensor (62); moving the chuck (13) to a first position based on at least one measurement of the alignment sensing system (17); and measuring at least one value related to the first position of the chuck.

    METHOD AND APPARATUS FOR PREDICTING A GROWTH RATE OF DEPOSITED CONTAMINANTS
    15.
    发明公开
    METHOD AND APPARATUS FOR PREDICTING A GROWTH RATE OF DEPOSITED CONTAMINANTS 审中-公开
    FOR预测污染增长速度的方法和装置沉积

    公开(公告)号：EP2758981A1

    公开(公告)日：2014-07-30

    申请号：EP12766627.9

    申请日：2012-09-19

    申请人： Mapper Lithography IP B.V.

    发明人： SMITS, Marc

    IPC分类号： H01J37/317 ,  G03F7/20

    CPC分类号： G01N23/22 ,  B82Y10/00 ,  B82Y40/00 ,  G01N33/0004 ,  G03F7/70608 ,  G03F7/70916 ,  H01J37/304 ,  H01J37/3174 ,  H01J37/3177 ,  H01J2237/022 ,  H01J2237/31796

    摘要： A lithography system (10) comprising a radiation projection system (20) for projecting radiation onto a substrate, a substrate transport system (30) for loading and positioning the substrate to be processed in the path of the projected radiation, a control system (40) for controlling the substrate transport system to move the substrate, and a resist characterization system (50) arranged for determining whether a specific type of resist is suitable to be exposed by radiation within the lithography system. The resist characterization system (50) may be arranged for exposing the resist on a surface of the substrate with one or more radiation beams, measuring a mass distribution of molecular fragments emitted from the resist, predicting a growth rate of deposited molecular fragments on the basis of a growth rate model and the measured mass distribution, and comparing the expected growth rate with a predetermined threshold growth rate.

    High-voltage insulation device for charged-particle optical apparatus
    16.
    发明公开
    High-voltage insulation device for charged-particle optical apparatus 有权
    Hochspannungsisolationsvorrichtungfüreine optische Vorrichtung mit geladenen Partikeln

    公开(公告)号：EP2757571A1

    公开(公告)日：2014-07-23

    申请号：EP14150119.7

    申请日：2014-01-03

    申请人： IMS Nanofabrication AG

    发明人： Platzgummer, Elmar ,  Chylik, Andreas ,  Kratzert, Gerald ,  Oberleitner, Roman

    IPC分类号： H01J37/02 ,  H01J37/04 ,  H01J37/15 ,  H01J37/317

    CPC分类号： H01B17/14 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/023 ,  H01J37/04 ,  H01J37/147 ,  H01J37/15 ,  H01J37/3177 ,  H01J2237/036 ,  H01J2237/038 ,  H01J2237/1502

    摘要： A high-voltage insulation device (300) for use in a charged-particle optical apparatus comprises a plurality of rigid pillars (320) made of electrically insulating material. These pillars (320) are arranged around a central passage (310) which traverses the insulating device along its longitudinal axis (L), and the two ends of each pillar are configured to be respectively fixed to two separate electrostatic housings (221, 231) of the charged-particle optical apparatus by means of two respective end plates (311, 312), with the pillars (320) being oriented at an angle so as to be inclined with regard to said longitudinal axis (L). Advantageously, the pillars are mechanically adjustable with regard to their effective length, and each pillar (320) is arranged outside the central passage with its two ends at either of the first and second end plates (311,312), preferably in a zig-zag arrangement.

    摘要翻译： 用于带电粒子光学装置的高压绝缘装置（300）包括由电绝缘材料制成的多个刚性支柱（320）。 这些支柱（320）围绕中心通道（310）布置，该中心通道沿其纵向轴线（L）穿过绝缘装置，并且每个支柱的两端被分别固定在两个独立的静电外壳（221,231）上， 通过两个相应的端板（311,312）连接带电粒子光学装置，其中支柱（320）以一定的角度定向成相对于所述纵向轴线（L）倾斜。 有利地，支柱可相对于其有效长度机械地调节，并且每个支柱（320）布置在中央通道的外侧，其两端位于第一和第二端板（311,312）中的任一个处，优选地以锯齿形布置 。