公开(公告)号：EP2936547A1

公开(公告)日：2015-10-28

申请号：EP13864157.6

申请日：2013-12-12

申请人： CBrite Inc.

发明人： SHIEH, Chan-Long ,  FOONG, Fatt ,  MUSOLF, Juergen ,  YU, Gang

IPC分类号： H01L21/00

CPC分类号： H01L29/7869 ,  H01L29/66969 ,  H01L29/78696

摘要： A metal oxide thin film transistor includes a metal oxide semiconductor channel with the metal oxide semiconductor having a conduction band with a first energy level. The transistor further includes a layer of passivation material covering at least a portion of the metal oxide semiconductor channel. The passivation material has a conduction band with a second energy level equal to, or less than 0.5 eV above the first energy level.

公开(公告)号：EP2932534A1

公开(公告)日：2015-10-21

申请号：EP13863613.9

申请日：2013-12-09

申请人： CBrite Inc.

发明人： SHIEH, Chan-long ,  YU, Gang

IPC分类号： H01L31/036

CPC分类号： H01L31/20 ,  H01L27/1225 ,  H01L27/1463 ,  H01L27/14632 ,  H01L27/14663 ,  H01L27/14687 ,  H01L27/14692 ,  H01L31/0368 ,  H01L31/0376 ,  Y02E10/50

摘要： A method of fabricating a pixelated imager includes providing a substrate with bottom contact layer and sensing element blanket layers on the contact layer. The blanket layers are separated into an array of sensing elements by trenches isolating adjacent sensing elements. A sensing element electrode is formed adjacent each sensing element overlying a trench and defining a TFT. A layer of metal oxide semiconductor material is formed on a dielectric layer overlying the electrodes and on an exposed upper surface of the blanket layers defining the sensing element adjacent each TFT. A layer of metal is deposited on each TFT and separated into source/drain electrodes on opposite sides of the electrode.The metal forming one of the electrodes contacts the MOS material overlying the exposed surf ace of the semiconductor layer, whereby each sensing element in the array is electrically connected to the adjacent TFT by the MOS material.

摘要翻译： 制造像素化成像器的方法包括在接触层上提供底层接触层和感测元件覆盖层。 橡皮布层通过隔离相邻感测元件的沟槽分离成感测元件的阵列。 感测元件电极邻近覆盖沟槽的每个感测元件形成并且限定TFT。 一层金属氧化物半导体（MOS）材料形成在覆盖电极的电介质层上，并且在覆盖层的暴露的上表面上形成与每个TFT相邻的感测元件。 在每个TFT上沉积一层金属，并在传感元件电极的相对侧分离成源极/漏极。 形成S / D电极之一的金属接触覆盖半导体层的暴露表面的MOS材料，由此阵列中的每个感测元件通过MOS材料电连接到相邻的TFT。

公开(公告)号：EP2915183A2

公开(公告)日：2015-09-09

申请号：EP13851524.2

申请日：2013-10-24

申请人： CBrite Inc.

发明人： SHIEH, Chan-Long ,  YU, Gang

IPC分类号： H01L21/00

CPC分类号： H01L21/6836 ,  H01L21/67144 ,  H01L21/67721 ,  H01L21/68757 ,  H01L21/68778 ,  H01L25/042 ,  H01L25/0753 ,  H01L25/50 ,  H01L27/1222 ,  H01L27/1225 ,  H01L31/18 ,  H01L33/0095 ,  H01L33/44 ,  H01L33/58 ,  H01L33/62 ,  H01L2224/83 ,  H01L2224/95 ,  H01L2225/06527 ,  H01L2225/06555 ,  H01L2924/0002 ,  H01L2933/0025 ,  H01L2933/0058 ,  H01L2933/0066 ,  Y10T156/171 ,  H01L2924/00

摘要： A method of dispersing semiconductor chips from a wafer of semiconductor chips onto a substrate while preserving the neighboring relationship of each chip to each adjacent chip is disclosed. The method includes dispersing the wafer into sequential columns of semiconductor chips with a first pitch between columns while preserving the neighboring relationship and sequentially dispersing the columns of semiconductor chips into rows of individual chips with a second pitch between rows onto a substrate while preserving the neighboring relationship.

公开(公告)号：EP2856251A1

公开(公告)日：2015-04-08

申请号：EP13797618.9

申请日：2013-05-28

申请人： CBrite Inc.

发明人： SHIEH, Chan-long ,  YU, Gang ,  FOONG, Fatt ,  LEE, Liu-chung

IPC分类号： G02F1/1343

CPC分类号： G02F1/134363 ,  G02F1/13439 ,  G02F1/1368 ,  G02F2001/134372 ,  G02F2001/136231 ,  G02F2001/136236 ,  H01L27/1225 ,  H01L27/1288

摘要： A method of fabricating a TFT and IPS with reduced masking operations includes a substrate, a gate, a layer of gate dielectric on the gate and surrounding substrate surface and a semiconducting metal oxide on the gate dielectric. A channel protection layer overlies the gate to define a channel area in the semiconducting metal oxide. A S/D metal layer is patterned on the channel protection layer and a portion of the exposed semiconducting metal oxide to define an IPS area. An organic dielectric material is patterned on the S/D terminals and at an opposed side of the IPS area. The S/D metal is etched to expose the semiconducting metal oxide defining a first IPS electrode. A passivation layer covers the first electrode and a layer of transparent conductive material is patterned on the passivation layer to define a second IPS electrode overlying the first electrode.

摘要翻译： 制造具有减少的掩模操作的TFT和IPS的方法包括衬底，栅极，栅极和周围衬底表面上的栅极电介质层以及栅极电介质上的半导体金属氧化物。 沟道保护层覆盖栅极以在半导体金属氧化物中限定沟道区域。 在沟道保护层和暴露的半导体金属氧化物的一部分上图案化S / D金属层以限定IPS区域。 有机介电材料在S / D端子上和IPS区域的相对侧上被图案化。 对S / D金属进行蚀刻以暴露限定第一IPS电极的半导体金属氧化物。 钝化层覆盖第一电极并且在钝化层上图案化透明导电材料层以限定覆盖第一电极的第二IPS电极。

公开(公告)号：EP2715786A4

公开(公告)日：2015-01-07

申请号：EP12796733

申请日：2012-05-16

申请人： CBRITE INC

发明人： SHIEH CHAN-LONG ,  YU GANG ,  FOONG FATT

IPC分类号： H01L21/36 ,  H01L21/44 ,  H01L21/465 ,  H01L29/45 ,  H01L29/786

CPC分类号： H01L29/7869 ,  H01L21/428 ,  H01L29/45 ,  H01L29/66969 ,  H01L29/78606

公开(公告)号：EP2422361A1

公开(公告)日：2012-02-29

申请号：EP10767477.2

申请日：2010-03-12

申请人： CBrite Inc.

发明人： SHIEH, Chan-Long, ,  YU, Gang

IPC分类号： H01L21/336 ,  H01L29/786

CPC分类号： H01L29/7869 ,  H01L21/02554 ,  H01L21/02565 ,  H01L29/66969

摘要： A method of fabricating metal oxide TFTs on transparent substrates includes the steps of positioning an opaque gate metal area on the front surface of the substrate, depositing transparent gate dielectric and transparent metal oxide semiconductor layers overlying the gate metal and a surrounding area, depositing transparent passivation material on the semiconductor material, depositing photoresist on the passivation material, exposing and developing the photoresist to remove exposed portions, etching the passivation material to leave a passivation area defining a channel area, depositing transparent conductive material over the passivation area, depositing photoresist over the conductive material, exposing and developing the photoresist to remove unexposed portions, and etching the conductive material to leave source and drain areas on opposed sides of the channel area.

摘要翻译： 在透明衬底上制造金属氧化物TFT的方法包括以下步骤：在衬底的前表面上定位不透明的栅极金属区域，沉积透明栅极电介质和覆盖栅极金属和周围区域的透明金属氧化物半导体层，沉积透明钝化 在半导体材料上沉积光刻胶，在光刻胶上沉积光刻胶，曝光和显影光刻胶以去除曝光部分，刻蚀钝化材料留下限定沟道区域的钝化区域，在钝化区域上沉积透明导电材料， 暴露并显影光致抗蚀剂以去除未曝光部分，以及蚀刻导电材料以在沟道区域的相对侧上留下源极和漏极区域。

公开(公告)号：EP2324492A2

公开(公告)日：2011-05-25

申请号：EP09812301.1

申请日：2009-09-04

申请人： CBrite Inc.

发明人： SHIEH, Chan-long ,  YU, Gang

IPC分类号： H01L21/322 ,  H01L31/00

CPC分类号： H01L29/04 ,  H01L21/00 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02592 ,  H01L21/16 ,  H01L21/28556 ,  H01L27/1214 ,  H01L27/1225 ,  H01L29/24 ,  H01L29/7869 ,  H01L29/78693 ,  H01L51/5012

摘要： A thin film semiconductor device has a semiconductor layer including a mixture of an amorphous semiconductor ionic metal oxide and an amorphous insulating covalent metal oxide. A pair of terminals is positioned in communication with the semiconductor layer and define a conductive channel, and a gate terminal is positioned in communication with the conductive channel and further positioned to control conduction of the channel. The invention further includes a method of depositing the mixture including using nitrogen during the deposition process to control the carrier concentration in the resulting semiconductor layer.

公开(公告)号：EP2319034A1

公开(公告)日：2011-05-11

申请号：EP09800927.7

申请日：2009-07-22

申请人： CBrite Inc.

发明人： SHIEH, Chan-Long ,  YU, Gang

IPC分类号： G09G3/32

CPC分类号： H01L27/322 ,  H01L27/3244

摘要： A full-color active matrix organic light emitting display including a transparent substrate, a color filter positioned on an upper surface of the substrate, a spacer layer formed on the upper surface of the color filter, a metal oxide thin film transistor backpanel formed on the spacer layer and defining an array of pixels, and an array of single color, organic light emitting devices formed on the backpanel and positioned to emit light downwardly through the backpanel, the spacer layer, the color filter, and the substrate in a full-color display.

摘要翻译： 本发明公开了一种全色有源矩阵有机发光显示器，包括透明基板，位于基板上表面的彩色滤光片，形成于彩色滤光片上表面的间隔层，形成于该基板上的金属氧化物薄膜晶体管背板， 间隔层并限定像素阵列，以及形成在背板上的单色有机发光器件阵列，其定位成通过背板，间隔层，滤色器和基板向下发射全色 显示。

公开(公告)号：EP3005420A4

公开(公告)日：2017-01-04

申请号：EP14801432

申请日：2014-05-07

申请人： CBRITE INC

发明人： SHIEH CHAN-LONG ,  YU GANG ,  FOONG FATT ,  MUSOLF JUERGEN

IPC分类号： H01L29/786 ,  H01L29/66

CPC分类号： H01L29/66969 ,  H01L21/02063 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/76805 ,  H01L21/76814 ,  H01L21/76895 ,  H01L27/1225 ,  H01L29/247 ,  H01L29/42384 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66742 ,  H01L29/78603 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/78693 ,  H01L29/78696 ,  H01L2021/775

公开(公告)号：EP3005420A2

公开(公告)日：2016-04-13

申请号：EP14801432.7

申请日：2014-05-07

申请人： CBrite Inc.

发明人： SHIEH, Chan-long ,  YU, Gang ,  FOONG, Fatt ,  MUSOLF, Juergen

IPC分类号： H01L29/786 ,  H01L21/336

CPC分类号： H01L29/66969 ,  H01L21/02063 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/76805 ,  H01L21/76814 ,  H01L21/76895 ,  H01L27/1225 ,  H01L29/247 ,  H01L29/42384 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66742 ,  H01L29/78603 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/78693 ,  H01L29/78696 ,  H01L2021/775

摘要： A method of fabricating a stable high mobility amorphous MOTFT includes a step of providing a substrate with a gate formed thereon and a gate dielectric layer positioned over the gate. A carrier transport structure is deposited by sputtering on the gate dielectric layer. The carrier transport structure includes a layer of amorphous high mobility metal oxide adjacent the gate dielectric and a relatively inert protective layer of material deposited on the layer of amorphous high mobility metal oxide both deposited without oxygen and
in situ . The layer of amorphous metal oxide has a mobility above 40 cm
2 /Vs and a carrier concentration in a range of approximately 10
18 cm
-3 to approximately 5xl0
19 cm
-3 . Source/drain contacts are positioned on the protective layer and in electrical contact therewith.

摘要翻译： 制造稳定的高迁移率无定形MOTFT的方法包括提供其上形成有栅极的基板和位于栅极上方的栅介质层的步骤。 通过溅射将载流子传输结构沉积在栅极介电层上。 载流子传输结构包括邻近栅极电介质的非晶高迁移率金属氧化物层，以及沉积在无氧和原位沉积的无定形高迁移率金属氧化物层上的相对惰性的材料保护层。 无定形金属氧化物层的迁移率高于40cm 2 / Vs，载流子浓度在约1018cm-3至约5×1019cm-3的范围内。 源极/漏极触点位于保护层上并与其接触。