公开(公告)号：EP2752251A1

公开(公告)日：2014-07-09

申请号：EP12828475.9

申请日：2012-08-16

申请人： Fujifilm Corporation

发明人： IWASE, Eijiro

IPC分类号： B05D5/00 ,  B05D1/26 ,  B32B9/00 ,  B32B27/30 ,  C23C16/42

CPC分类号： C09D5/00 ,  B05D1/265 ,  B05D3/06 ,  B05D7/04 ,  B05D7/54 ,  B05D2252/02 ,  C08J7/06 ,  C08J2333/14 ,  C08L2312/08 ,  C09D123/04 ,  C09D133/08 ,  C23C16/0272 ,  C23C16/308 ,  C23C16/345 ,  C23C16/401 ,  C23C16/403 ,  C23C16/50 ,  C23C16/545 ,  C23C16/56 ,  Y10T428/24372 ,  C08L51/06

摘要： The present invention relates to a high-performance functional film, such as a gas barrier film with a high gas barrier performance, which uses an inexpensive support and is manufactured at a low cost and a high productivity. According to the functional film of the present invention which is formed by laminating a coating-based organic layer and an inorganic layer based on a vapor phase deposition method, a glass transition temperature of the organic layer is at least 100°C, and a thickness thereof is between 0.05 µm and 3 µm. The organic layer is coated with at least 5 cc/m 2 of a coating material, and formed for a viscosity in a falling-rate drying state to be at least 20 cP and for a surface tension to be 34 dyn/cm or less. The inorganic layer is formed at a surface of the organic layer by a vapor phase film formation method for plasma generation.

摘要翻译： 本发明涉及一种高性能功能膜，例如阻气性高的阻气膜，其使用廉价的载体并以低成本和高生产率制造。 根据通过基于气相沉积法层压基于涂料的有机层和无机层形成的本发明的功能膜，有机层的玻璃化转变温度为至少100℃，厚度 在0.05μm和3μm之间。 有机层涂覆有至少5cc / m 2的涂料，并以下降干燥状态的粘度形成为至少20cP，表面张力为34dyn / cm以下。 通过用于等离子体产生的气相成膜方法在有机层的表面上形成无机层。

公开(公告)号：EP2660041A4

公开(公告)日：2014-06-25

申请号：EP11852550

申请日：2011-12-01

申请人： KONICA MINOLTA INC

发明人： MORI TAKAHIRO

IPC分类号： B32B9/00 ,  B05D3/06 ,  C08J7/04 ,  C08J7/12 ,  C23C14/06 ,  C23C18/12 ,  C23C18/14 ,  H01L51/50 ,  H05B33/02 ,  H05B33/04

CPC分类号： H01L23/564 ,  C08J7/042 ,  C08J2383/02 ,  C23C14/0676 ,  C23C14/562 ,  C23C16/0272 ,  C23C16/308 ,  C23C16/345 ,  C23C26/00 ,  C23C28/04 ,  H01L2924/0002 ,  Y10T428/26 ,  H01L2924/00

公开(公告)号：EP2085495B1

公开(公告)日：2014-04-23

申请号：EP09001304.6

申请日：2009-01-30

申请人： FUJIFILM Corporation

发明人： Nakagame, Masami ,  Takahashi, Toshiya ,  Murakami, Tomoo ,  Ooseki, Meiki ,  Fujinami, Tatsuya

IPC分类号： C23C16/34 ,  C23C16/509 ,  H01L51/52

CPC分类号： C23C16/5096 ,  C23C16/345 ,  H01L51/5253 ,  Y10T428/31663

公开(公告)号：EP2581377A4

公开(公告)日：2014-03-05

申请号：EP11792310

申请日：2011-05-30

申请人： TOSOH CORP ,  SAGAMI CHEMICAL RES INST

发明人： TADA KEN-ICHI ,  IWANAGA KOHEI ,  YAMAMOTO TOSHIKI ,  MANIWA ATSUSHI

IPC分类号： C07F7/02 ,  C07F7/10 ,  C23C16/34 ,  C23C16/40 ,  C23C16/42 ,  H01L21/02 ,  H01L21/316 ,  H01L21/318

CPC分类号： C07F7/025 ,  C23C16/345 ,  C23C16/401 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02271

公开(公告)号：EP2242092A4

公开(公告)日：2014-02-05

申请号：EP09705243

申请日：2009-01-20

申请人： MITSUBISHI HEAVY IND LTD

发明人： SHIMAZU TADASHI ,  NISHIKAWA SEIJI ,  KAFUKU HIDETAKA

IPC分类号： H01L21/318 ,  C23C16/34 ,  C23C16/42 ,  C23C16/505 ,  H01J37/32 ,  H01L21/31 ,  H01L21/768 ,  H01L23/522 ,  H05H1/46

CPC分类号： H01L21/0217 ,  C23C16/345 ,  C23C16/505 ,  H01J37/321 ,  H01J37/32706 ,  H01L21/02274 ,  H01L21/3185

公开(公告)号：EP2579300A4

公开(公告)日：2013-12-18

申请号：EP11786529

申请日：2011-05-18

申请人： MITSUBISHI HEAVY IND LTD

发明人： NISHIKAWA SEIJI

IPC分类号： H01L21/318 ,  C23C16/34 ,  C23C16/42 ,  C23C16/505 ,  C23C16/507

CPC分类号： C01B21/068 ,  C23C16/345 ,  C23C16/505 ,  H01L21/0217 ,  H01L21/02274

摘要： Disclosed are: a silicon nitride film of a semiconductor element, which is formed by applying a bias power and appropriately controls hydrogen leaving from the silicon nitride film; and a method and apparatus for producing a silicon nitride film. Specifically disclosed is a silicon nitride film which is formed on a substrate (19) by plasma processing and used in a semiconductor element. If the silicon nitride film is in contact with a film (41) to which supply of hydrogen is required to be shut off, the silicon nitride film is configured of a biased SiN (31) that is formed by applying a bias to the substrate (19) and an unbiased SiN (32) that is formed without applying a bias to the substrate (19) and the unbiased SiN (32) is arranged on the side on which the silicon nitride film is in contact with the film (41).

公开(公告)号：EP2669248A1

公开(公告)日：2013-12-04

申请号：EP13170299.5

申请日：2013-06-03

申请人： AIR PRODUCTS AND CHEMICALS, INC.

发明人： Xiao, Manchao ,  Lei, Xinjian ,  Spence, Daniel P. ,  Chandra, Haripin ,  Han, Bing ,  O'Neill, Mark Leonard ,  Mayorga, Steven Gerard ,  Mallikarjunan, Anupama

IPC分类号： C01B33/04 ,  C07F7/02 ,  C07F7/10 ,  C23C16/00

CPC分类号： H01L21/02211 ,  C01B21/0682 ,  C01B21/0828 ,  C01B33/021 ,  C01B33/126 ,  C01P2002/02 ,  C07F7/025 ,  C07F7/10 ,  C09D1/00 ,  C09D7/20 ,  C23C16/18 ,  C23C16/345 ,  C23C16/401 ,  C23C16/45525 ,  C23C16/45536 ,  C23C16/45542 ,  C23C16/45553 ,  C23C16/46 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02219 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02532 ,  H01L21/0262 ,  Y10T428/13

摘要： Described herein are precursors and methods for forming silicon-containing films. In one aspect, there is provided a precursor of Formula I:

wherein R 1 is selected from linear or branched C 3 to C 10 alkyl group, linear or branched C 3 to C 10 alkenyl group, linear or branched C 3 to C 10 alkynyl group, C 1 to C 6 dialkylamino group, electron withdrawing group, and C 6 to C 10 aryl group; R 2 is selected from hydrogen, linear or branched C 1 to C 10 alkyl group, linear or branched C 3 to C 6 alkenyl group, linear or branched C 3 to C 6 alkynyl group, C 1 to C 6 dialkylamino group, C 6 to C 10 aryl group, linear or branched C 1 to C 6 fluorinated alkyl group, electron withdrawing group, and C 4 to C 10 aryl group; optionally wherein R 1 and R 2 are linked together to form ring selected from substituted or unsubstituted aromatic ring or substituted or unsubstituted aliphatic ring; and n=1 or 2.

摘要翻译： 本文描述了用于形成含硅膜的前体和方法。 在一个方面，提供了式I的前体：其中R 1选自直链或支链C 3至C 10烷基，直链或支化C 3至C 10烯基，直链或支化C 3至C 10炔基，C 1至C 6二烷基氨基 ，吸电子基团和C6至C10芳基; R2选自氢，直链或支链C1至C10烷基，直链或支链C3至C6烯基，直链或支链C3至C6炔基，C1至C6二烷基氨基，C6至C10芳基，直链或支链C1至 C6氟化烷基，吸电子基团和C4至C10芳基; 任选地其中R 1和R 2连接在一起形成选自取代或未取代的芳族环或取代或未取代的脂族环的环; 并且n = 1或2。

公开(公告)号：EP2553141A4

公开(公告)日：2013-08-21

申请号：EP11763521

申请日：2011-04-01

申请人： AIR LIQUIDE

发明人： HIGASHINO KATSUKO ,  YANAGITA KAZUTAKA

IPC分类号： C23C16/448 ,  C23C16/34 ,  C23C16/36 ,  C23C16/44 ,  C23C16/455 ,  H01L21/205

CPC分类号： C23C16/448 ,  C23C16/34 ,  C23C16/345 ,  C23C16/36 ,  C23C16/45553

公开(公告)号：EP2535343A2

公开(公告)日：2012-12-19

申请号：EP12169229.7

申请日：2012-05-24

申请人： AIR PRODUCTS AND CHEMICALS, INC.

发明人： Xiao, Manchao ,  Lei, Xinjian ,  Han, Bing ,  O'Neill, Mark Leonard ,  Pearlstein, Ronald Martin ,  Ho, Richard ,  Chandra, Haripin ,  Derecskei-Kovacs, Agnes

IPC分类号： C07F7/02 ,  C23C16/36 ,  H01L21/02

CPC分类号： C23C16/24 ,  C07F7/025 ,  C07F7/10 ,  C23C16/308 ,  C23C16/32 ,  C23C16/345 ,  C23C16/347 ,  C23C16/401 ,  C23C16/402 ,  C23C16/45553 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/02219 ,  H01L21/0228

摘要： Described herein are organoaminosilane precursors which can be used to deposit silicon containing films which contain silicon and methods for making these precursors. Also disclosed herein are deposition methods for making silicon-containing films or silicon containing films using the organoaminosilane precursors described herein. Also disclosed herein are the vessels that comprise the organoaminosilane precursors or a composition thereof that can be used, for example, to deliver the precursor to a reactor in order to deposit a silicon-containing film.

摘要翻译： 本文描述了可用于沉积含有硅的含硅膜的有机氨基硅烷前体和用于制备这些前体的方法。 本文还公开了使用本文所述的有机氨基硅烷前体制备含硅膜或含硅膜的沉积方法。 还公开了包含有机氨基硅烷前体或其组合物的容器，其可以用于例如将前体输送到反应器以沉积含硅膜。

公开(公告)号：EP2365105B1

公开(公告)日：2012-10-24

申请号：EP11156750.9

申请日：2011-03-03

申请人： Fujifilm Corporation

发明人： Mochizuki, Yoshihiko ,  Nishida, Hiroyuki

IPC分类号： C23C16/54 ,  C23C16/34 ,  C23C16/455 ,  B32B7/02

CPC分类号： C23C16/545 ,  C23C16/345 ,  C23C16/45502 ,  C23C16/45565 ,  Y10T428/2495