METHOD FOR DETECTING METHYLATED CYTOSINE BY USING BISULFITE REACTION
    32.
    发明公开
    METHOD FOR DETECTING METHYLATED CYTOSINE BY USING BISULFITE REACTION 有权
    VERFAHREN ZUM NACHWEIS冯甲基胞苷胞蛋白双歧杆菌

    公开(公告)号:EP2799541A4

    公开(公告)日:2015-07-29

    申请号:EP12858295

    申请日:2012-12-10

    IPC分类号: C12Q1/68 C12N15/09

    摘要: It is an object of the present invention to provide a method for converting non-methylated cytosine in a single-stranded DNA into uracil by a novel bisulfite reaction with higher conversion efficiency from non-methylated cytosine into uracil as compared with the conventional bisulfite method, a method for amplifying the single-stranded DNA in which non-methylated cytosine has been converted into uracil, and a method for detecting methylated cytosine in the single-stranded DNA. The present invention relates to (1) a method for converting non-methylated cytosine in a single-stranded DNA into uracil, comprising subjecting the single-stranded DNA to bisulfite reaction under the presence of at least one of compounds shown by the above-described general formula [1] to [8]; (2) a method for amplifying single-stranded DNA in which non-methylated cytosine has been converted into uracil, comprising further subjecting the single-stranded DNA after bisulfite reaction of (1) to PCR reaction; and (3) a method for detecting methylated cytosine in the aforementioned single-stranded DNA, comprising subjecting the single-stranded DNA amplified in (2) to nucleotide sequence analysis,

    摘要翻译: 本发明的目的是提供一种通过与常规亚硫酸氢盐方法相比,通过新的亚硫酸氢盐反应将非甲基化胞嘧啶转化成尿嘧啶的方法,其具有较高的转化效率,从非甲基化胞嘧啶转化为尿嘧啶, 用于扩增其中非甲基化胞嘧啶已经转化成尿嘧啶的单链DNA的方法以及在单链DNA中检测甲基化胞嘧啶的方法。 本发明涉及(1)将单链DNA中的非甲基化胞嘧啶转化成尿嘧啶的方法,其包括在至少一种上述化合物存在下使单链DNA进行亚硫酸氢盐反应 通式[1]〜[8]; (2)扩增其中非甲基化胞嘧啶已经转化成尿嘧啶的单链DNA的方法,其还包括在(1)的亚硫酸氢盐反应之后对单链DNA进行PCR反应; (3)上述单链DNA中检测甲基化胞嘧啶的方法,包括使(2)中扩增的单链DNA进行核苷酸序列分析,

    CLEANING AGENT FOR SEMICONDUCTOR SUBSTRATES AND METHOD FOR PROCESSING SEMICONDUCTOR SUBSTRATE SURFACE
    34.
    发明公开
    CLEANING AGENT FOR SEMICONDUCTOR SUBSTRATES AND METHOD FOR PROCESSING SEMICONDUCTOR SUBSTRATE SURFACE 审中-公开
    清洁剂用于半导体基板和方法用于处理半导体衬底的表面

    公开(公告)号:EP2843689A4

    公开(公告)日:2015-05-13

    申请号:EP13780549

    申请日:2013-04-26

    IPC分类号: C11D7/32 C11D7/36 H01L21/306

    摘要: The purpose of the present invention is to provide: a cleaning agent for a semiconductor substrate superior in corrosion resistance of a tungsten wiring or a tungsten alloy wiring, and superior in removal property of polishing fines (particle) such as silica or alumina, remaining at surface of the semiconductor substrate, in particular, at surface of a silicon oxide film such as a TEOS film, after a chemical mechanical polishing process; and a method for processing a semiconductor substrate surface. The present invention relates to a cleaning agent for a semiconductor substrate to be used in a post process of a chemical mechanical polishing process of the semiconductor substrate having a tungsten wiring or a tungsten alloy wiring, and a silicon oxide film, comprising (A) a phosphonic acid-based chelating agent, (B) a primary or secondary monoamine having at least one alkyl group or hydroxyalkyl group in a molecule and (C) water, wherein a pH is over 6 and below 7; and a method for processing a semiconductor substrate surface.