摘要:
A thermally assisted magnetic writing device including a first magnetic layer known as the "reference layer," a second magnetic layer known as the "storage layer" that presents a variable magnetization direction, a spacer situated between the reference layer and the storage layer and a first antiferromagnetic layer in contact with the storage layer, the first antiferromagnetic layer being able to trap the magnetization direction of the storage layer. The magnetic device also includes a stabilization layer made of a ferromagnetic material, the stabilization layer being in contact with the first antiferromagnetic layer.
摘要:
The present invention relates to a magnetoresistive sensor comprising a first trapped-magnetization magnetic layer (410) and a free-magnetization magnetic layer (430), called the sensitive layer, which are separated by a first magnetic-decoupling separator layer (420). The sensor further includes a second trapped-magnetization magnetic layer (450), separated from said sensitive layer by a second magnetic-decoupling separator layer (440), the first and second separator layers being located on either side of said sensitive layer, and the respective magnetizations of the first trapped-magnetization magnetic layer and of the sensitive layer, in the absence of an external field, being approximately orthogonal. The direction of magnetization of this second trapped layer is chosen.
摘要:
The invention relates to a magnetic device (1) with thermally assisted writing, comprising at least one magnetic element including: a reference layer (2) having a stable vortex magnetisation configuration; means for creating a magnetic field for reversibly moving the core of the vortex in the plane of the reference layer; a storage layer (4) having a variable magnetisation configuration; a non-magnetic spacer (3) which separates the reference layer (2) and the storage layer (4) and magnetically decouples same; an antiferromagnetic trapping layer (5) in contact with the storage layer (4), which can trap the magnetisation configuration of the storage layer, said storage layer having at least two storage levels corresponding to two trapped magnetisation configurations; and heating means for heating the antiferromagnetic trapping layer (5) such that, during heating, the temperature of the antiferromagnetic trapping layer exceeds its blocking temperature such that, when hot, the magnetisation configuration of the storage layer (4) is no longer trapped.
摘要:
The invention relates to magnetic tweezers (1) having two jaws (2, 3) formed by thin magnetic films connected together via a hinge (9). The magnetic tweezers (1) according to the invention preferably comprise a nanoparticle formed by a stack of thin magnetic films. The invention also relates to a process for fabricating the magnetic tweezers by techniques used in the fabrication of microelectronic components.
摘要:
A method for manufacturing particles includes depositing on a substrate a layer of a first sacrificial material; depositing on the layer of the first sacrificial material a layer of a second sacrificial material that is different from the first sacrificial material; forming cavities in the layer of the second sacrificial material, the forming including pressing a structured mold against the layer of second sacrificial material; depositing a material for manufacturing the particles, the material covering the layer of the second material and at least partially filling the cavities; selectively removing the second sacrificial material from the first sacrificial material so as to obtain the particles formed by the material and arranged on the layer of the first sacrificial material; and eliminating the first sacrificial material to release the particles.
摘要:
The present invention relates to a method of fabricating a nanostructure, comprising the following steps: prestructuring a substrate (1) adapted to receive the nanostructure to form a nanorelief (2) on the substrate, the nanorelief having flanks (4) extending from a bottom (1a) of the substrate and a top face (3) extending from said flanks, and then depositing on the substrate prestructured in this way a single layer or multilayer coating intended to form the nanostructure; and further comprising: adding to the prestructured substrate or to the coating a separation layer adapted to enable separation of the coating and the substrate by external action of mechanical, thermomechanical or vibratory type; and exerting this external action on the substrate and/or the coating to recover selectively a top portion of the coating by separating it from the top face of the nanorelief so that this top portion constitutes some or all of the nanostructure.
摘要:
The present invention relates to a magnetic device (200) comprising a reference magnetic layer (201) with a fixed magnetisation direction either aligned with the plane of the layer (201) or perpendicular to the plane of the layer (201), a second magnetic storage layer (203), having a variable magnetisation direction, a nonmagnetic spacer (202) separating the reference layer (201) from the storage layer (203), and a third magnetic layer (205) for the electron spin polarisation with a magnetisation perpendicular to that of the layer (201) and out-of-plane of the layer (205) if the magnetisation direction of the reference layer (201) is in the plane of the layer (201) or in the plane of the layer (205) if the magnetisation direction of the reference layer (201) is perpendicular to the plane of the layer (201). The spin transfer coefficient between the reference layer (201) and the storage layer (203) is higher than the spin transfer coefficient between the spin polarisation layer (205) and the storage layer (203).