公开(公告)号：EP1376670A4

公开(公告)日：2005-04-06

申请号：EP02708713

申请日：2002-03-28

申请人： TOKYO ELECTRON LTD ,  OHMI TADAHIRO

发明人： OHMI TADAHIRO ,  HIRAYAMA MASAKI ,  SUGAWA S ,  GOTO TETSUYA

IPC分类号： H05H1/46 ,  B01J19/08 ,  C23C16/511 ,  H01J37/32 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/31

CPC分类号： H01J37/3244 ,  H01J37/32192 ,  H01J37/32238

摘要： In a microwave plasma-processing device, a shower plate or plasma penetration window opposed to a board to be processed is recessed on the side opposed to the board to be processed, whereby a decrease in plasma density in the peripheral region of the board to be processed is compensated. As a result, even when plasma processing at low pressure, such as etching, is effected, stabilized uniform plasma is maintained in the vicinity of the surface of the board to be processed. Further, such arrangement enhances ignition of plasma.

摘要翻译： 在微波等离子体处理装置中，在与被处理基板相对的一侧凹入与被处理基板相对的喷淋板或等离子体渗透窗，从而使基板周边区域的等离子体密度降低 处理得到补偿。 其结果是，即使进行蚀刻等低压等离子体处理，也能够在被处理基板表面附近维持稳定的均匀的等离子体。 此外，这种布置增强了等离子体的点燃。

公开(公告)号：EP1213953A4

公开(公告)日：2004-10-06

申请号：EP00950063

申请日：2000-08-11

申请人： DAISHODENSHI KK ,  OHMI TADAHIRO

发明人： OHMI TADAHIRO ,  MURAKAMI HIDETOSHI

IPC分类号： H05K3/46

CPC分类号： H05K3/4611 ,  Y10T29/49117 ,  Y10T29/49126 ,  Y10T29/4913

摘要： A method and apparatus for manufacturing a multiplayer printed wiring board where the variation in the plate thickness and misregistration are eliminated by eliminating resin flow. The method for manufacturing a multiplayer printed wiring board by stacking a conductive foil or a conductor clad laminate sheet for the outer layer, a prepreg (5), and a conductor clad laminate sheet for the inner layer and then curing the prepreg (5) by hot press is characterized in that impurities are removed from the surface of the conductive foil or the conductor clad laminate sheet for outer layer, the prepreg (5), and the conductor clad laminate sheet for the inner layer by blowing gas (13) thereto before the hot press.

公开(公告)号：EP0968753A4

公开(公告)日：2002-10-29

申请号：EP98959174

申请日：1998-12-11

申请人： NIPPON OXYGEN CO LTD ,  OHMI TADAHIRO

发明人： OHMI TADAHIRO ,  ISHIHARA YOSHIO ,  MATSUMOTO KOH ,  KIMIJIMA TETSUYA

IPC分类号： B01D53/86

CPC分类号： B01D53/8659

摘要： A method for treating an exhaust gas, which comprises bringing an exhaust gas discharged from CVD equipment employing silicon-base gas into contact with a transition metal such as nickel or a silicide thereof preheated to a given temperature, thus decomposing a feed gas and high-boiling intermediates contained in the exhaust gas, and then rendering toxic components contained in the exhaust gas harmless.

摘要翻译： 一种用于处理废气的方法和装置，其中使含有含硅气体的CVD系统中排出的废气中包含的原料气体和高沸点中间产物与诸如镍的过渡金属接触 或这种过渡金属的硅化物分解或将其转化成稳定的卤化物，然后对废气中包含的有害成分进行解毒处理。

公开(公告)号：EP1079394A4

公开(公告)日：2001-07-11

申请号：EP99913705

申请日：1999-04-19

申请人： ULTRACLEAN TECHNOLOGY RES INST ,  OHMI TADAHIRO ,  SHIBATA TADASHI

发明人： OHMI TADAHIRO ,  SHIBATA TADASHI ,  WEE KENG HOONG ,  YONEZAWA TAKEMI ,  NOZAWA TOSHIYUKI ,  NITTA TAKAHISA

IPC分类号： G11C16/02 ,  G11C11/56 ,  G11C27/00 ,  H01L21/8247 ,  H01L27/115 ,  H01L29/788 ,  H01L29/792

CPC分类号： G11C11/5642 ,  G11C11/5621 ,  G11C11/5628 ,  G11C27/005 ,  G11C2211/5613

摘要： A semiconductor circuit of large-scale integration for storing analog data and multivalued data accurately at high speed. The semiconductor circuit comprises memory cells for analog and multivalued signals, a read circuit provided with an output to produce voltage indicating a value stored in the memory cell, a comparator provided with an output to produce an end-of-write signal when the voltage at the output of the read circuit becomes equal to a predetermined voltage, a write voltage control circuit having an input for receiving analog and multivalued voltage as write voltage of the memory cell and having an output for producing voltage corresponding to the voltage value, and a write voltage switch circuit for supplying the output voltage from the write voltage control circuit to the memory cell until the end-of-write signal appears at the output of the comparator.

公开(公告)号：EP0642871A4

公开(公告)日：1997-04-23

申请号：EP93910412

申请日：1993-05-28

申请人： OSAKA OXYGEN IND ,  OHMI TADAHIRO

发明人： OHMI TADAHIRO ,  NAKAMURA MASAKAZU

IPC分类号： B23K9/00 ,  B23K9/035 ,  B23K35/38 ,  C23C8/10 ,  C23C8/18 ,  B23K9/16 ,  C23C8/14

CPC分类号： B23K35/383 ,  C23C8/10

摘要： This invention provides a welding method capable of forming an oxide passivation film having corrosion resistance and an extremely small emission quantity of an outgas during welding at a weld portion and portions nearby, and a process apparatus requiring an ultrahigh-clean atmosphere. A back-seal gas comprising an inert gas contaning 1 ppb to 50 ppm of oxygen gas in caused to flow during a welding process and an oxide passivation film comprising chromium oxide as a principal component is formed on the surface of a weld portion. In a process apparatus using welding for installing the apparatus, a back-seal gas comprising an inert gas containing 1 ppb to 50 ppm of oxygen gas is caused to flow during a welding process and an oxide passivation film comprising chromium oxide as a principal component is formed on the surface of a weld portion.

公开(公告)号：EP0597100A4

公开(公告)日：1997-04-02

申请号：EP92914442

申请日：1992-07-02

申请人： OHMI TADAHIRO

发明人： OHMI TADAHIRO

IPC分类号： G03F7/32 ,  H01L21/027 ,  H01L21/30

CPC分类号： G03F7/322

摘要： To provide a developing solution and a developing method, by which an ultrafine pattern of a photoresist can be formed in a high yield and the components of the developing solution remaining on a wafer can be thouroughly removed by washing with ultrapure water after the development. The developing solution is one to be used in preparing a photoresist and comprises a surfactant and an aqueous alkali solution, which is characterized in that it contains H2O2, that the aqueous alkali solution is an aqueous solution of tetramethylammonium hydroxide (TMAH) or one mainly comprising TMAH, and that the molecular weight of the surfactant is 500 to 5,000. The developing method is characterized by using a developing solution for preparing a photoresist comprising a surfactant and an aqueous alkali solution and containing H2O2 to pattern a photoresist on a substrate.

摘要翻译： 为了提供显影方案和显影方法，通过该方法可以以高产率形成光致抗蚀剂的超细图案，并且通过在显影后用超纯水洗涤可以清除残留在晶片上的显影溶液的组分。 显影液是用于制备光致抗蚀剂的组合物，其包含表面活性剂和碱性水溶液，其特征在于，其含有H 2 O 2，所述碱性水溶液是四甲基氢氧化铵（TMAH）的水溶液或主要包含 TMAH，表面活性剂的分子量为500〜5000。 显影方法的特征在于使用显影液制备包含表面活性剂和碱性水溶液并含有H 2 O 2的光刻胶的显影液，以在基材上图案化光致抗蚀剂。

公开(公告)号：EP0653793A4

公开(公告)日：1997-03-19

申请号：EP93916243

申请日：1993-07-29

申请人： SHIBATA TADASHI ,  OHMI TADAHIRO

发明人： SHIBATA TADASHI ,  OHMI TADAHIRO

IPC分类号： H01L27/10 ,  G06N3/063 ,  H01L27/115 ,  H01L29/788 ,  H03K5/24 ,  H01L29/78

CPC分类号： G06N3/0635 ,  H01L27/115 ,  H01L29/788 ,  H03K5/2472

摘要： A semiconductor device of simple circuit capable of comparing the magnitudes of plural data at a high speed. This device has an inverter circuit group containing one or more inverter circuits formed by neuron MOS transistors; means for applying to a first input gate of the inverter circuit a first signal voltage which is common to the inverters belonging to the foregoing inverter circuit group; means for applying predetermined second signal voltage to one or more second input gates other than the first input gate of the inverter; and means for detecting the variation of the output voltage in at least one inverter circuit of the inverter circuit group due to the variation with time of either the first or the second signal voltage or both, and for applying positive feedback to given inverters of the inverter circuit group according to the detection.

公开(公告)号：EP0722181A4

公开(公告)日：1997-01-08

申请号：EP94924392

申请日：1994-08-19

申请人： OHMI TADAHIRO

发明人： OHMI TADAHIRO ,  TOMITA KAZUO

IPC分类号： H01J37/317 ,  H01L21/265

CPC分类号： H01J37/3171 ,  H01J2237/0213

摘要： This invention aims at providing an ion implanter adapted to reduce metal impurity contamination. An ion implanter for introducing predetermined impurities into a semiconductor substrate by irradiating the semiconductor substrate with an accelerated ion beam, characterized in that the portion of a member positioned behind, with respect to a direction of advance of the ion beam, the semiconductor substrate which is irradiated with the ion beam is formed out of material containing at least one of the semiconductor constituting the semiconductor substrate, an oxide of this semiconductor and a nitride thereof as a main component; or coated on an outer surface of the same portion of the member with the material. An ion implanter characterized in that it is formed so that a member positioned behind, with respect to a direction of advance of an ion beam, a semiconductor substrate is not irradiated with the ion beam.

公开(公告)号：EP0658950A4

公开(公告)日：1995-11-29

申请号：EP94908199

申请日：1993-08-10

申请人： OHMI TADAHIRO

发明人： OHMI TADAHIRO

IPC分类号： C25B1/04 ,  H01M6/24 ,  H01M8/18 ,  H01M12/08

CPC分类号： H01M8/186 ,  C25B1/04 ,  H01M6/24 ,  H01M12/08 ,  Y02E60/128 ,  Y02E60/366

摘要： This invention aims at providing a generator which is capable of producing large electric power at a low cost without substantially using fossil fuel and without contaminating the global environment, and which can be used instead of a thermal power generating machine. The present invention is characterized in that a solution consisting of a solvent which does not dissociate itself, and a substance added to and dissociating in the solvent, is held in a container having an inner corrosion resisting and insulating surface, an anode of a small work function and a cathode of a large work function being immersed in a mutually opposed state in this solution. The present invention is characterized in that it has a container having an inner corrosion resisting and insulating surface, a solution held in an atmospheric air-isolated state in the interior of the container and consisting of a liquid of an anhydrous hydrogen fluoride and water added thereto, an anode consisting of a material having corrosion resistance and a small work function and a cathode consisting of a material having corrosion resistance and a large work function which are immersed in a mutually opposed state in the solution, and a heat application means.

摘要翻译： 本发明的目的在于提供一种发电机，该发电机能够以实质上不使用化石燃料且不污染地球环境的低成本产生大的电力，并且能够代替火力发电机使用。 本发明的特征在于，由不溶解的溶剂和溶剂中添加和解离的物质组成的溶液被保持在具有内部耐腐蚀和绝缘表面的容器中，小型工件的阳极 功能和大功函数的阴极在该溶液中以相互对置的状态浸入。 本发明的特征在于，它具有一个具有内部耐腐蚀和绝缘表面的容器，一个在容器内部保持在大气空气隔离状态的溶液，该溶液由加入了无水氟化氢和水的液体组成 由具有耐腐蚀性和小功函数的材料构成的阳极和由具有耐腐蚀性和大功函数的材料构成的阴极以及热施加装置以互相相对的状态浸入溶液中。

公开(公告)号：EP0692336A4

公开(公告)日：1995-10-20

申请号：EP94904321

申请日：1994-01-14

申请人： OHMI TADAHIRO

发明人： OHMI TADAHIRO

IPC分类号： B23K9/02 ,  B23K9/23 ,  B23K9/235 ,  B23K31/00 ,  B23K35/00 ,  B23K35/32 ,  C23C8/02

CPC分类号： B23K9/232 ,  B23K9/23 ,  B23K35/004 ,  B23K35/32 ,  B23K2203/05 ,  C23C8/02

摘要： This invention provides a welding method capable of forming on a weld of the material to be welded and in the vicinity thereof in the step of welding a passivated chromium oxide film an outer surface of which has excellent corrosion resisting, a capability of substantially preventing the adsorption of water onto the outer surface, and a capability of permitting water, even when it is adsorbed onto the surface, to be removed simply with low energy; and a welded structure having the same film. A welding method for forming a passivated chromium oxide film on a weld of each material to be welded, consisting of the steps of forming a chromium-containing film at the end of the material which has on its outer surface a passivated oxide film formed by thermal treatment and containing chromium as the main component, setting face to face with each other the ends of the materials thus coated, and welding these ends, whereby a passivated oxide film containing chromium oxide as the main component which has a high corrosion resistance and which does not substantially provide outgassing can be formed on the outer surface of the weld.