公开(公告)号：EP2037484A2

公开(公告)日：2009-03-18

申请号：EP08014738.2

申请日：2008-08-20

申请人： ASM INTERNATIONAL N.V.

发明人： Kuznetsov, Vladimir

IPC分类号： H01L21/00 ,  B01J4/00

CPC分类号： C30B23/005 ,  C23C16/045 ,  C23C16/4404 ,  C23C16/45565 ,  C30B35/002 ,  H01L21/67103 ,  H01L21/67109 ,  Y10T29/41

摘要： Holes in semiconductor processing reactor parts are sized to facilitate deposition of protective coatings, such chemical vapor deposition at atmospheric pressure. In some embodiments, the holes each have a flow constriction that narrows the holes in one part and that also divides the holes into one or more other portions. In some embodiments, the aspect ratios of the one or more other portions are about 15:1 or less, or about 7:1 or less, and have a cylindrical or conical cross-sectional shape. The holes are coated with a protective coating, such as a silicon carbide coating, by chemical vapor deposition, including chemical vapor deposition at atmospheric pressure.

摘要翻译： 在半导体处理反应器零件孔尺寸便于保护涂层的沉积，在大气压力下寻求化学气相沉积。 在一些实施方案中，每个孔有一个流动压缩都变窄为一个部件的孔和孔分成使得一个或多个其他部分。 在一些实施例中，一个或多个其它部分的纵横比是约15：1或更小，或约7：1或更小，并且具有圆柱形或圆锥形的横截面形状。 这些孔涂覆有保护涂层，颜色：诸如碳化硅涂层，通过化学气相沉积，包括在大气压力化学气相沉积。

公开(公告)号：EP1104012B1

公开(公告)日：2008-12-31

申请号：EP00204178.8

申请日：2000-11-23

申请人： ASM INTERNATIONAL N.V.

发明人： Vermeulen, Willem Job Cornelis ,  Philippsen, Bengt ,  Wierts, Erik ,  Beulens, Jacobus Johannes ,  Oosterlaken, Theodorus Gerardus Maria

IPC分类号： H01L21/316 ,  H01L21/00

CPC分类号： H01L21/67109 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/31662

公开(公告)号：EP1322797B1

公开(公告)日：2006-12-13

申请号：EP01958109.9

申请日：2001-07-20

申请人： ASM INTERNATIONAL N.V.

发明人： LINDFORS, Sven ,  SOININEN, Pekka, T.

IPC分类号： C23C16/44 ,  C23C16/00 ,  C30B25/02 ,  C30B25/16

CPC分类号： C23C16/45525 ,  C23C16/45544 ,  C30B25/14

摘要： The present invention relates to the production of thin films. In particular, the invention concerns a method of growing a thin film onto a substrate, in which method the substrate is placed in a reaction chamber and is subjected to surface reactions of a plurality of vapor-phase reactants according to the ALD method. The present invention is based on replacing the mechanical valves conventionally used for regulating the pulsing of the reactants, which valves tend to wear and intrude metallic particles into the process flow, with an improved precursor dosing system. The invention is characterized by choking the reactant flow between the vapour-phase pulses while still allowing a minimum flow of said reactant, and redirecting the reactant at these times to an other destination than the reaction chamber. The redirection is performed with an inactive gas, which is also used for ventilating the reaction chamber between the vapour-phase pulses.

公开(公告)号：EP1638135A2

公开(公告)日：2006-03-22

申请号：EP05019177.4

申请日：2005-09-03

申请人： ASM INTERNATIONAL N.V.

发明人： Van Den Berg, Jannes Remco ,  Grannemann, Ernst H.A.

IPC分类号： H01L21/00

CPC分类号： H01L21/67109 ,  C30B31/14 ,  H01L21/67306 ,  H01L21/68742

摘要： Susceptors plates are formed having a minimum surface roughness. The wafer contact surfaces of the susceptor plates have a surface roughness Ra value of about 0.6 µm or more. The contact surface is otherwise flat and lacking in large protrusions. In addition, the susceptors have a low transparency to more closely match the heat absorption properties of the supported wafer. Advantageously, heat transfer from the susceptors to the wafers is highly uniform. Thus, using these susceptors to support the wafers during high temperature semiconductor processing ( e.g. , at > 1000°C) results in no or few crystallographic slip lines being formed on the wafers.

摘要翻译： 形成具有最小表面粗糙度的感受器板。 基座板的晶片接触面的表面粗糙度Ra值为约0.6μm以上。 接触表面是平坦的，并且没有大的突起。 此外，感受体具有低透明度以更紧密地匹配被支撑晶片的吸热性能。 有利地，从基座到晶片的热传递是高度均匀的。 因此，在高温半导体处理（例如，> 1000℃）下使用这些基座来支撑晶片导致晶片上没有形成或几乎没有形成晶体学滑移线。

公开(公告)号：EP1052309A3

公开(公告)日：2003-10-29

申请号：EP00660085.2

申请日：2000-05-10

申请人： ASM INTERNATIONAL N.V.

发明人： Bondestam, Niklas ,  Kesälä, Janne ,  Keto, Leif ,  Soininen, Pekka T.

IPC分类号： C23C16/44 ,  C30B25/02 ,  C30B25/08 ,  C30B25/12 ,  H01L21/00

CPC分类号： C23C16/45544 ,  C30B25/02 ,  C30B25/08 ,  C30B25/12 ,  C30B25/165

摘要： The invention relates to an apparatus for growing thin films onto a substrate by exposing the substrate to alternate surface reactions of vapor-phase reactants for forming a thin film onto the substrate by means of said surface reactions. The apparatus comprises a vacuum vessel (1), a reaction chamber (2) with a reaction space into which the substrate can be transferred and which has infeed channels (6) for feeding therein the reactants used in said thin film growth process, as well as outlet channels (4) for discharging gaseous reaction products and excess reactants. According to the invention, said reaction chamber comprises a base part (9, 10) mounted stationary in respect to the interior of said vacuum vessel (1) and a movable part (18) adapted to be sealably closable against said base part of said reaction chamber. The invention makes it possible to improve the cleanliness of the substrate load chamber and to reduce the degree of substrate contamination. The apparatus is intended for use in the fabrication of thin films by means of the ALE method for semiconductor layer structures and display units.

公开(公告)号：EP1345256A2

公开(公告)日：2003-09-17

申请号：EP03251587.6

申请日：2003-03-14

申请人： ASM INTERNATIONAL N.V.

发明人： Van den Berg, Jannes Remco ,  Den Hartog, Edwin

IPC分类号： H01L21/00

CPC分类号： H01L21/67778 ,  H01L21/67098 ,  H01L21/67346 ,  H01L21/67379 ,  H01L21/67383 ,  H01L21/67769 ,  H01L21/6838 ,  H01L21/68707 ,  Y10S414/136

摘要： A method and apparatus for batch processing of semiconductor wafers in a furnace advantageously allow for wafers (160) to be supported for processing at very high temperatures ( e . g ., about 1350°C). Each wafer (160) is supported during processing by a wafer support (140) with full perimeter support, such as a ring or plate. The wafers, on their supports, are removable and vertically spaced apart in a wafer support holder. A transfer station (143) is provided wherein, during loading, a wafer (160) is placed on a wafer support (140) and, during unloading, the wafer (160) is separated from the wafer support (140). A FOUP (Front Opening Unified Pod) (100) is adapted to accommodate a plurality of wafer supports (140) and to accommodate the transfer station (143). The wafer support (140), with a wafer (160) supported on it, is transferred from the transfer station (143) to a wafer support holder for processing.

公开(公告)号：EP1341213A2

公开(公告)日：2003-09-03

申请号：EP03075327.1

申请日：2003-02-03

申请人： ASM INTERNATIONAL N.V.

发明人： de Ridder, Christianus Gerardus Maria ,  Hasper, Albert ,  Snijders, Gert-Jan ,  Zinger, Jan

IPC分类号： H01L21/00

CPC分类号： H01L21/67769

摘要： An apparatus for treating wafers, provided with at least one treatment chamber, the apparatus being provided with a feeding section in which wafers contained in a wafer storage box can be fed into the apparatus, the apparatus being provided with a wafer handling apparatus, by means of which wafers can be taken out of the wafer storage boxes so as to be treated in the treatment chamber, and the apparatus being provided with at least one sensor box arranged such that the wafer handling apparatus can feed a wafer into the sensor box through an opening provided for that purpose in the at least one sensor box, and the at least one sensor box being arranged to carry out measurements at a wafer, wherein the at least one sensor box is movably arranged and the apparatus is provided with a sensor box handling apparatus arranged to move the at least one sensor box from a storage position to a measuring position.

摘要翻译： 一种用于处理晶片的设备，具有至少一个处理室，所述设备设置有馈送部分，其中容纳在晶片存储盒中的晶片可以被馈送到所述设备中，所述设备通过装置设置有晶片处理装置 其中可以将晶片从晶片储存盒中取出以便在处理室中进行处理，并且该设备设置有至少一个传感器盒，其布置成使得晶片处理装置可以通过一个晶片处理装置将晶片馈送到传感器盒中 在所述至少一个传感器盒中设置用于该目的的开口，并且所述至少一个传感器盒被布置成在晶片处执行测量，其中所述至少一个传感器盒可移动地布置，并且所述设备设置有传感器盒处理 设置成将所述至少一个传感器盒从存储位置移动到测量位置的装置。

公开(公告)号：EP1258909A2

公开(公告)日：2002-11-20

申请号：EP02076864.4

申请日：2002-05-13

申请人： ASM INTERNATIONAL N.V.

发明人： Storm, Arjen ,  Bast, Ronald ,  Kuznetsov, Vladimir Ivanovich ,  Zinger, Jan

IPC分类号： H01L21/00

CPC分类号： H01L21/00 ,  H01L21/67109

摘要： Method and device for the heat treatment of flat substrates, wherein the substrates are positioned in the vicinity of a heated, essentially flat furnace body extending over the surface of the substrate. In order to provide a reproducible treatment when treating a number of substrates successively, the temperature of the furnace body is measured so close to the surface adjacent to the substrate that the withdrawal of heat from the furnace body by the substrate can be detected. The introduction of each substrate takes place at a point in time when the temperature measured in this way is, within certain limits, equal to a desired initial treatment temperature T trig .

摘要翻译： 用于平面基板的热处理的方法和装置，其中基板位于在衬底的表面上延伸的加热的基本平坦的炉体附近。 为了在连续处理多个基板时提供可再现的处理，炉体的温度被测量为与基板相邻的表面接近，可以检测到通过基板取出炉体的热量。 每个衬底的引入在这样测量的温度在一定限度内等于期望的初始处理温度T trig的时间点发生。

公开(公告)号：EP0778610B1

公开(公告)日：2002-07-17

申请号：EP96203122.5

申请日：1996-11-07

申请人： ASM INTERNATIONAL N.V.

发明人： Zinger, Jan ,  Haanstra, Kornelius ,  Schimmel, Rudi

IPC分类号： H01L21/00

CPC分类号： H01L21/67796 ,  H01L21/681 ,  Y10S414/135

公开(公告)号：EP1197990A2

公开(公告)日：2002-04-17

申请号：EP01306928.1

申请日：2001-08-14

申请人： ASM INTERNATIONAL N.V.

发明人： Zinger, Jan ,  De Ridder, Christianus G.M.

IPC分类号： H01L21/00

CPC分类号： H01L21/67757 ,  H01L21/67379 ,  H01L21/67386 ,  H01L21/67769 ,  H01L21/67775 ,  H01L21/67781

摘要： A system for processing semiconductor wafers includes adaptations allowing the selective handling of cassettes for both 200-mm wafers and 300·mm wafers. The system is configured initially for handling standard 300·mm FOUP cassettes. Adaptions for handling 200·mm wafer open cassettes include a load port adapter frame for receiving such cassettes on a input/output platform; a cassette handler adapter configured for reversibly mounting on a cassette handler end effector and for receiving 200-mm open cassettes; a store adapter frame for converting 300·mm FOUP storage compartments into compartments for storing 200-mm open cassettes; and a Transhipment FOUP for holding 200-mm open cassettes upon a cassette transfer platform and bringing such cassettes into an interface with a wafer handler. The Transhipment FOUP has outer surfaces resembling a standard 300-mm FOUP cassette, but is configured to receive a 200-mm open cassette therein.

摘要翻译： 用于处理半导体晶片的系统包括允许选择性地处理200-mm晶片和300.mm晶片的盒的适配。 该系统最初用于处理标准的300.mm FOUP盒。 用于处理200.mm晶圆打开盒的改装包括用于在输入/输出平台上接收这样的盒的装载端口适配器框架; 盒式处理机适配器，被配置为可逆地安装在盒式处理器端部执行器上并用于接收200-mm打开的盒式磁带; 用于将300.mm FOUP存储隔间转换成用于存储200-mm打开盒的隔间的商店适配器框架; 以及用于在盒式传送平台上保持200-mm打开盒的转运FOUP，并将这样的盒带入与晶片处理器的界面中。 转运FOUP具有类似于标准300毫米FOUP盒的外表面，但被配置为在其中接收一个200毫米打开的盒式磁带。