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    METHOD FOR ETCHING LAYER TO BE ETCHED.
    41.
    发明公开
    METHOD FOR ETCHING LAYER TO BE ETCHED. 有权
    VERFAHREN ZUMÄTZENEINER ZUÄTZENDENSCHICHT

    公开(公告)号：EP3073518A1

    公开(公告)日：2016-09-28

    申请号：EP14863512.1

    申请日：2014-09-19

    申请人： Tokyo Electron Limited

    发明人： HASHIMOTO Mitsuru ,  SONE Takashi ,  NISHIMURA Eiichi ,  SHIMODA Keiichi

    IPC分类号： H01L21/3065 ,  H01L21/8246 ,  H01L27/105 ,  H01L43/08 ,  H01L43/12

    CPC分类号： H01L43/12 ,  G11C11/161 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

    摘要： Provided is a method for etching an etching target layer of a workpiece. The workpiece has a mask on the etching target layer. The etching target layer and the mask are formed from respective materials for which etching efficiency by a plasma of a rare gas having an atomic number greater than an atomic number of argon is higher than etching efficiency for the materials by a plasma of argon gas. The mask is formed from a material having a melting point higher than that of the etching target layer. The method includes (a) exposing the workpiece to a plasma of a first process gas containing a first rare gas having an atomic number greater than the atomic number of argon, and (b) exposing the workpiece to a plasma of a second process gas containing a second rare gas having an atomic number less than the atomic number of argon.

    摘要翻译： 提供了蚀刻工件的蚀刻目标层的方法。 工件在蚀刻目标层上具有掩模。 蚀刻目标层和掩模由各自的原料数量大于氩原子数的稀有气体的等离子体的蚀刻效率高于氩气等离子体的材料的蚀刻效率的材料形成。 掩模由熔点高于蚀刻目标层的材料形成。 该方法包括（a）将工件暴露于含有原子序数大于氩原子数的第一稀有气体的第一工艺气体的等离子体，和（b）将工件暴露于含有 具有原子序数小于氩原子数的第二稀有气体。

    MLU BASED MAGNETIC SENSOR HAVING IMPROVED PROGRAMMABILITY AND SENSITIVITY
    42.
    发明公开
    MLU BASED MAGNETIC SENSOR HAVING IMPROVED PROGRAMMABILITY AND SENSITIVITY 有权
    MLU-BASIERTER MAGNETSENSOR MIT VERBESSERTER PROGRAMMIERBARKEIT UND EMPFINDLICHKEIT

    公开(公告)号：EP3045927A1

    公开(公告)日：2016-07-20

    申请号：EP15290013.0

    申请日：2015-01-16

    申请人： Crocus Technology

    发明人： Bandiera, Sébastien

    IPC分类号： G01R33/09 ,  B82Y25/00 ,  B82Y40/00 ,  H01F10/32 ,  G11C11/16 ,  H01F41/30 ,  H01L43/08 ,  H01L27/22

    CPC分类号： G01R33/098 ,  B82Y25/00 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  H01F10/3254

    摘要： The present disclosure concerns a magnetic sensor device (100) for sensing an external magnetic field, comprising a plurality of MLU cells (1), each MLU cell (1) comprising a magnetic tunnel junction (2) including a sense layer (21) having a sense magnetization (210) freely orientable in the external magnetic field; a storage layer (23) having a storage magnetization (230); and a tunnel barrier layer (22) between the sense layer (21) and the storage layer (23); the magnetic sensor device (100) further comprising a stress inducing device (6) configured for applying an anisotropic mechanical stress on the magnetic tunnel junction (2) such as to induce a stress-induced magnetic anisotropy (271, 272) on at least one of the sense layer (21) and the storage layer (23); and the stress-induced magnetic anisotropy (271, 272) induced by the stress inducing device corresponding substantially to a net magnetic anisotropy (280) of said at least one of the sense layer (21) and the storage layer (23). The magnetic sensor device can be programmed easily and has improved sensitivity.

    摘要翻译： 本公开涉及一种用于感测外部磁场的磁传感器装置（100），其包括多个MLU单元（1），每个MLU单元（1）包括磁性隧道结（2），该磁性隧道结包括感测层（21） 感测磁化（210）可在外部磁场中自由定向; 存储层（23），具有存储磁化（230）; 以及在所述感测层（21）和所述存储层（23）之间的隧道势垒层（22）。 所述磁传感器装置（100）还包括应力诱导装置（6），所述应力诱导装置（6）被配置用于在所述磁性隧道结（2）上施加各向异性机械应力，以便在至少一个上引起应力诱导的磁各向异性（271,272） 的感应层（21）和存储层（23）; 以及由所述应力诱导装置诱导的应力诱导的磁各向异性（271,272），其基本上对应于所述至少一个感测层（21）和存储层（23）的净磁各向异性（280）。 磁传感器设备可以轻松编程并提高灵敏度。

    INVERTED ORTHOGONAL SPIN TRANSFER LAYER STACK
    43.
    发明公开
    INVERTED ORTHOGONAL SPIN TRANSFER LAYER STACK 审中-公开
    UMGEKEHRTER ORTHOGONALER旋转传递速度计

    公开(公告)号：EP2909838A4

    公开(公告)日：2016-06-01

    申请号：EP13847226

    申请日：2013-10-15

    申请人： UNIV NEW YORK

    发明人： KENT ANDREW ,  BACKES DIRK

    IPC分类号： G11C11/16 ,  H01F10/32 ,  H01L43/08

    CPC分类号： H01L37/00 ,  B82Y40/00 ,  G11C11/16 ,  G11C11/161 ,  H01F10/3272 ,  H01F10/3286 ,  H01F41/307 ,  H01L43/08

    摘要： A magnetic device includes a pinned magnetic layer having a first fixed magnetization vector with a first fixed magnetization direction. The magnetic device also includes a free magnetic layer having a variable magnetization vector having at least a first stable state and a second stable state. The magnetic device also has a first non-magnetic layer and a reference. The first non-magnetic layer spatially separates the pinned magnetic layer and the free magnetic layer. The magnetic device also includes a second non-magnetic layer spatially separating the free magnetic layer and the reference magnetic layer. A magnetic tunnel junction, located below the pinned magnetic layer, is formed by the free magnetic layer, the second non-magnetic layer, and the reference magnetic layer. Application of a current pulse, having either positive or negative polarity and a selected amplitude and duration, through the magnetic device switches the variable magnetization vector.

    摘要翻译： 磁性装置包括具有第一固定磁化方向的第一固定磁化矢量的钉扎磁性层。 磁性装置还包括具有至少第一稳定状态和第二稳定状态的可变磁化矢量的自由磁性层。 磁性装置还具有第一非磁性层和参考。 第一非磁性层空间地分离被钉扎的磁性层和自由磁性层。 磁性装置还包括在空间上分离自由磁性层和参考磁性层的第二非磁性层。 位于钉扎磁性层下方的磁性隧道结由自由磁性层，第二非磁性层和参考磁性层形成。 通过磁性装置施加具有正极性或负极性以及所选择的幅度和持续时间的电流脉冲切换可变磁化矢量。

    MEMORY CELLS, METHODS OF OPERATION AND FABRICATION, SEMICONDUCTOR DEVICE STRUCTURES, AND MEMORY SYSTEMS
    44.
    发明公开
    MEMORY CELLS, METHODS OF OPERATION AND FABRICATION, SEMICONDUCTOR DEVICE STRUCTURES, AND MEMORY SYSTEMS 审中-公开
    存储单元中，有关操作方法及生产半导体器件结构和存储系统

    公开(公告)号：EP3017450A1

    公开(公告)日：2016-05-11

    申请号：EP14820123.9

    申请日：2014-06-27

    申请人： Micron Technology, Inc.

    发明人： SANDHU, Gurtej S. ,  KULA, Witold

    IPC分类号： G11C11/15 ,  G11C11/00

    CPC分类号： H01L43/02 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  H01L27/222 ,  H01L43/08 ,  H01L43/10

    摘要： A magnetic cell core includes at least one stressor structure proximate to a magnetic region (e.g., a free region or a fixed region). The magnetic region may be formed of a magnetic material exhibiting magnetostriction. During switching, the stressor structure may be subjected to a programming current passing through the magnetic cell core. In response to the current, the stressor structure may alter in size. Due to the size change, the stressor structure may exert a stress upon the magnetic region and, thereby, alter its magnetic anisotropy. In some embodiments, the MA strength of the magnetic region may be lowered during switching so that a lower programming current may be used to switch the magnetic orientation of the free region. In some embodiments, multiple stressor structures may be included in the magnetic cell core. Methods of fabrication and operation and related device structures and systems are also disclosed.

    Self-referenced multibit MRAM cell having a synthetic antiferromagnetic storage layer
    46.
    发明公开
    Self-referenced multibit MRAM cell having a synthetic antiferromagnetic storage layer 有权
    多功能MRAM Zelle mit einer综合反铁磁仪Speicherschicht

    公开(公告)号：EP2958108A1

    公开(公告)日：2015-12-23

    申请号：EP14290174.3

    申请日：2014-06-17

    申请人： CROCUS Technology

    发明人： Stainer, Quentin

    IPC分类号： G11C11/16 ,  G11C11/56

    CPC分类号： G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/1693 ,  G11C11/5607

    摘要： The present disclosure concerns a multibit MRAM cell (1) comprising a magnetic tunnel junction (2) including a sense layer (21) having a freely orientable sense magnetization (211); a tunnel barrier layer (22), a synthetic antiferromagnet storage layer (23) having a first and second storage layer (231, 232); wherein the sense magnetization (211) induces a dipolar field (212) having a magnitude above a spin-flop field (H SF ) of the storage layer (23); the MRAM cell (1) further comprising aligning means for aligning the sense magnetization (211) in a plurality of distinct orientations such as to encode a plurality of distinct logic states in the MRAM cell (1). The present disclosure also concerns a method for operating the multibit MRAM cell (1).

    摘要翻译： 本公开涉及一种包括磁性隧道结（2）的多位MRAM单元（1），其包括具有可自由定向的感测磁化（211）的感测层（21）; 隧道势垒层（22），具有第一和第二存储层（231,232）的合成反铁磁存储层（23）; 其中感测磁化强度（211）引起具有高于存储层（23）的自旋场（H SF）的幅度的偶极场（212）; MRAM单元（1）还包括对准装置，用于将感测磁化（211）对准多个不同取向，以便编码MRAM单元（1）中的多个不同的逻辑状态。 本公开还涉及用于操作多位MRAM单元（1）的方法。