公开(公告)号：EP2342752B1

公开(公告)日：2015-01-07

申请号：EP09792789.1

申请日：2009-09-21

Applicant: SanDisk 3D LLC

Inventor： SCHRICKER, April, Dawn ,  SEKAR, Deepak, C. ,  FU, Andy ,  CLARK, Mark

IPC: H01L27/24 ,  H01L45/00

CPC classification number: H01L45/1233 ,  H01L27/101 ,  H01L27/1021 ,  H01L27/2418 ,  H01L27/2481 ,  H01L45/04 ,  H01L45/06 ,  H01L45/122 ,  H01L45/144 ,  H01L45/149 ,  H01L45/1683

公开(公告)号：EP2455971B1

公开(公告)日：2014-06-25

申请号：EP12155218.6

申请日：2009-08-18

Applicant: Micron Technology, Inc.

Inventor： Liu, Jun

IPC: H01L27/24 ,  H01L45/00

CPC classification number: H01L45/06 ,  H01L27/2463 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/143 ,  H01L45/144 ,  H01L45/148 ,  H01L45/1675 ,  H01L45/1683

Abstract: Memory devices having a plurality of memory cells (4), with each memory cell including a phase change material (2) having a laterally constricted portion there- of. The laterally constricted portions of adjacent memory cells are vertically offset and positioned on opposite sides of the memory device. Also disclosed are memory devices having a plurality of memory cells, with each memory cell including first and second electrodes having different widths. Adjacent memory cells have the first and second electrodes offset on vertically opposing sides of the memory device. Methods of forming the memory devices are also disclosed.

公开(公告)号：EP2706582A1

公开(公告)日：2014-03-12

申请号：EP13183707.2

申请日：2013-09-10

Applicant: STMicroelectronics (Crolles 2) SAS ,  COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

Inventor： Nodin, Jean-François ,  Sousa, Véronique ,  Lhostis, Sandrine

IPC: H01L45/00

CPC classification number: H01L45/1246 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/144 ,  H01L45/165 ,  H01L45/1683

Abstract: L'invention concerne une cellule mémoire comprenant un via en un matériau à changement de phase (41) disposé entre une électrode inférieure (33) et une électrode supérieure (39), dans laquelle le via comprend une région centrale (43) entourée latéralement par une région périphérique (45), les températures de cristallisation et de fusion de la région centrale étant respectivement inférieures à celles de la région périphérique.

Abstract translation: 本发明涉及一种设置在下部电极（33）和上部电极（39）之间的存储单元中的相变材料，其包括通过（41），其中所述通孔包括中心区域（43）由横向围绕 周边区域（45），中央区域的结晶和熔化温度分别低于周边区域的结晶和熔化温度。

公开(公告)号：EP2706581A1

公开(公告)日：2014-03-12

申请号：EP13177826.8

申请日：2013-07-24

Applicant: Freescale Semiconductor, Inc.

Inventor： Hong, Cheong Min ,  Zhou, Feng

IPC: H01L45/00 ,  G11C13/00 ,  H01L27/24

CPC classification number: G11C13/0007 ,  G11C11/5685 ,  G11C13/004 ,  G11C13/0069 ,  H01L27/2463 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1633 ,  H01L45/1683

Abstract: A resistive random access memory (ReRAM) device (107) comprises a first metal layer (206) including a first metal such as copper and a first metal-oxide layer (302) on the first metal layer (206). The first metal-oxide layer comprises the first metal. A second metal layer (502) comprises a second metal over and in physical contact with the first metal-oxide layer (302). A first continuous non-conductive barrier layer (204) is in physical contact with sidewalls of the first metal layer (206) and sidewalls of the first metal-oxide layer (302). A second metal-oxide layer (504) is on the second metal layer (502). The second metal-oxide layer comprises the second metal. A third metal layer (802) is over and in physical contact with the second metal-oxide layer (504). The first and second metal-oxide layers (302, 504) are independent storage media.

Abstract translation: 电阻随机存取存储器（ReRAM）器件（107）包括在第一金属层（206）上包括第一金属（例如铜）和第一金属氧化物层（302）的第一金属层（206）。 第一金属氧化物层包括第一金属。 第二金属层（502）包括与第一金属氧化物层（302）物理接触的第二金属。 第一连续非导电阻挡层（204）与第一金属层（206）的侧壁和第一金属氧化物层（302）的侧壁物理接触。 第二金属氧化物层（504）位于第二金属层（502）上。 第二金属氧化物层包括第二金属。 第三金属层（802）与第二金属氧化物层（504）物理接触。 第一和第二金属氧化物层（302,504）是独立的存储介质。

公开(公告)号：EP2219221A4

公开(公告)日：2013-03-13

申请号：EP08855256

申请日：2008-11-06

Applicant: PANASONIC CORP

IPC: H01L45/00 ,  H01L27/10

CPC classification number: H01L27/2409 ,  G11C13/0002 ,  G11C2213/71 ,  G11C2213/72 ,  H01L27/101 ,  H01L27/2481 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1683

公开(公告)号：EP2511280A1

公开(公告)日：2012-10-17

申请号：EP12171121.2

申请日：2007-03-12

Applicant: ADVANCED TECHNOLOGY MATERIALS, INC.

Inventor： Hunks, William ,  Hendrix, Bryan C. ,  Chen, Tianniu ,  Xu, Chongying ,  Roeder, Jeffrey F. ,  Baum, Thomas H. ,  Petruska, Melissa A. ,  Stender, Matthias ,  Chen, Philip S.H. ,  Stauf, Gregory T.

IPC: C07F7/30 ,  H01L45/00 ,  C23C16/22

CPC classification number: H01L45/1616 ,  C07C251/08 ,  C07F7/003 ,  C07F7/10 ,  C07F7/28 ,  C07F9/902 ,  C07F9/904 ,  C07F17/00 ,  C23C16/18 ,  C23C16/305 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/144 ,  H01L45/1683

Abstract: A vapor deposition process for depositing a germanium material on a substrate by volatilizing a germanium amidinate precursor to form a germanium-containing precursor vapor and depositing said germanium material on the substrate. The precursor is preferably germanium bis(n-butyl, N,N-diisopropylamidinate). The process and the precursors of the invention are useful for forming germanium-antimony-tellurium (GST) films and microelectronic device products, such as phase change memory devices, including such films.

Abstract translation: 一种气相沉积工艺，用于通过挥发锗酰脒前体以形成含锗前体蒸气并将所述锗材料沉积在基底上，从而将锗材料沉积在基底上。 前体优选为双（正丁基，N，N-二异丙基脒基）锗。 本发明的方法和前体可用于形成锗 - 锑 - 碲（GST）膜和微电子器件产品，例如包括这种膜的相变存储器件。

公开(公告)号：EP1846962B1

公开(公告)日：2012-06-27

申请号：EP06708098.6

申请日：2006-02-08

Applicant: Qimonda AG

Inventor： HAPP, Thomas

IPC: H01L45/00

CPC classification number: G11C13/0004 ,  G11C13/0069 ,  G11C2013/008 ,  G11C2213/52 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/1293 ,  H01L45/144 ,  H01L45/148 ,  H01L45/1675 ,  H01L45/1683

Abstract: A memory cell device includes a first electrode, phase-change material adjacent the first electrode, a second electrode adjacent the phase-change material, a diffusion barrier adjacent the phase-change material, and isolation material adjacent the diffusion barrier for thermally isolating the phase-change material. The diffusion barrier prevents diffusion of the phase-change material into the isolation material.

公开(公告)号：EP2263273B1

公开(公告)日：2012-05-16

申请号：EP09743209.0

申请日：2009-04-10

Applicant: Sandisk 3D LLC

Inventor： SCHRICKER, April, D. ,  CLARK, Mark, H.

IPC: G11C13/02 ,  H01L29/06 ,  H01L29/16

CPC classification number: G11C13/025 ,  B82Y10/00 ,  G11C2213/19 ,  G11C2213/71 ,  G11C2213/72 ,  H01L27/2409 ,  H01L27/2481 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/068 ,  H01L29/1606 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/149 ,  H01L45/1616 ,  H01L45/1641 ,  H01L45/1683

Abstract: Methods of forming planar carbon nanotube ("CNT") resistivity-switching materials for use in memory cells are provided, that include depositing first dielectric material (58b), patterning the first dielectric material, etching the first dielectric material to form a feature within the first dielectric material, depositing CNT resistivity-switching material over the first dielectric material to fill the feature at least partially with the CNT resistivity-switching material, depositing second dielectric material (112) over the CNT resistivity-switching material, and planarizing the second dielectric material and the CNT resistivity-switching material so as to expose at least a portion of the CNT resistivity-switching material within the feature. Other aspects are also provided.

公开(公告)号：EP2393957A1

公开(公告)日：2011-12-14

申请号：EP10702188.3

申请日：2010-01-26

Applicant: Micron Technology, Inc.

Inventor： SMYTHE, John

IPC: C23C14/22 ,  G11C16/02 ,  H01L27/24 ,  H01L45/00

CPC classification number: H01L45/06 ,  G11C13/0004 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/143 ,  H01L45/144 ,  H01L45/148 ,  H01L45/1683

Abstract: A variable resistance memory cell structure and a method of forming it. The method includes forming a first electrode, forming an insulating material over the first electrode, forming a via in the insulating material to expose a surface of the first electrode, forming a heater material within the via using gas cluster ion beams, forming a variable resistance material within the via, and forming a second electrode such that the heater material and variable resistance material are provided between the first and second electrodes.

公开(公告)号：EP2324503A2

公开(公告)日：2011-05-25

申请号：EP09808723.2

申请日：2009-08-18

Applicant: Micron Technology, Inc.

Inventor： LIU, Jun

IPC: H01L27/115 ,  H01L21/8247

CPC classification number: H01L45/06 ,  H01L27/2463 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/143 ,  H01L45/144 ,  H01L45/148 ,  H01L45/1675 ,  H01L45/1683

Abstract: Memory devices having a plurality of memory cells (4), with each memory cell including a phase change material (2) having a laterally constricted portion there- of. The laterally constricted portions of adjacent memory cells are vertically offset and positioned on opposite sides of the memory device. Also disclosed are memory devices having a plurality of memory cells, with each memory cell including first and second electrodes having different widths. Adjacent memory cells have the first and second electrodes offset on vertically opposing sides of the memory device. Methods of forming the memory devices are also disclosed.

Abstract translation: 具有多个存储器单元的存储器件，每个存储器单元包括具有其横向收缩部分的相变材料。 相邻存储器单元的横向收缩部分垂直偏移并定位在存储器装置的相对侧上。 还公开了具有多个存储单元的存储器件，每个存储器单元包括具有不同宽度的第一和第二电极。 相邻的存储器单元具有在存储器件的垂直相对侧偏移的第一和第二电极。 还公开了形成存储器件的方法。