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    MEMORY EFFECT REDUCTION USING LOW IMPEDANCE BIASING
    42.
    发明公开
    MEMORY EFFECT REDUCTION USING LOW IMPEDANCE BIASING 审中-公开
    SPEICHEREFFEKTREDUKTION MIT VORSPANNUNG VON NIEDRIGER IMPEDANZ

    公开(公告)号：EP3066753A4

    公开(公告)日：2017-06-21

    申请号：EP14857354

    申请日：2014-11-04

    Applicant: MARVELL WORLD TRADE LTD

    Inventor： SIGNOFF DAVID M ,  HE MING ,  LOEB WAYNE A

    IPC: H03F1/32 ,  H03F1/30 ,  H03F3/195 ,  H03F3/24 ,  H03F3/26 ,  H03F3/30 ,  H03F3/50

    CPC classification number: H03F3/245 ,  G05F1/46 ,  H03F1/301 ,  H03F1/308 ,  H03F3/195 ,  H03F3/265 ,  H03F3/505 ,  H03F2200/24 ,  H03F2200/451 ,  H03F2200/453 ,  H03F2200/534 ,  H03F2200/555 ,  H03F2200/69 ,  H03H7/0107

    Abstract: A circuit includes a bias circuit for a biased transistor. The bias circuit includes a master-slave source follower circuit, a reference transistor, and a bias circuit voltage output coupled to the biased transistor and configured to provide a bias voltage. The reference transistor has a transconductance substantially identical to a transconductance of the biased transistor. A signal ground circuit may be coupled between the biased transistor and one or more components of the bias circuit that do not generate significant return currents to a power supply ground. A method includes generating a current in a reference transistor according to a first voltage generated using a master source follower circuit, generating a second voltage substantially identical to the first voltage using a slave source follower circuit, and providing the second voltage to a biased transistor. The reference transistor has a transconductance substantially identical to a transconductance of the biased transistor.

    Abstract translation: 电路包括用于偏置晶体管的偏置电路。 偏置电路包括主 - 从源极跟随器电路，参考晶体管和耦合到偏置晶体管并被配置为提供偏置电压的偏置电路电压输出。 参考晶体管具有与偏置晶体管的跨导基本相同的跨导。 信号接地电路可以耦合在偏置晶体管与偏置电路的一个或多个组件之间，其不会产生大量的返回电流到电源地。 一种方法包括：根据使用主源极跟随器电路产生的第一电压在参考晶体管中产生电流;使用从源极跟随器电路产生与第一电压基本相同的第二电压;以及将第二电压提供给偏置晶体管。 参考晶体管具有与偏置晶体管的跨导基本相同的跨导。

    AMPLIFICATEUR AUDIO TRÈS HAUTE FIDÉLITÉ
    43.
    发明公开
    AMPLIFICATEUR AUDIO TRÈS HAUTE FIDÉLITÉ 审中-公开
    AMPLIFICATEUR AUDIOTRÈSHAUTEFIDÉLITÉ

    公开(公告)号：EP3161958A1

    公开(公告)日：2017-05-03

    申请号：EP15731971.6

    申请日：2015-06-30

    Applicant: Devialet

    Inventor： CALMEL, Pierre-Emmanuel

    IPC: H03F3/181 ,  H03F3/217

    CPC classification number: H03F1/02 ,  H03F3/181 ,  H03F3/183 ,  H03F3/217 ,  H03F3/45475 ,  H03F2200/03 ,  H03F2200/351 ,  H03F2200/391 ,  H03F2200/432 ,  H03F2200/534

    Abstract: This audio amplifier (10) comprises: - an input (12) for an audio signal to be amplified and an output (14) for feeding a load (16) from the amplified audio signal; - a reference voltage generator (18) for generating voltage of very high linearity and low output impedance, capable of receiving as an input the audio signal to be amplified; - a power current generator (19), comprising a power voltage generator (21), the output of which is connected to the output of the reference voltage generator (18), via a coupling impedance (30). The coupling impedance (30) comprises two coupling inductances (32A, 32B) mounted in series between the output of the reference generator (18) and the output of the power voltage generator (21) and an attenuation impedance (44) linking a mid-point between the two coupling inductances (32A, 32B) and a reference potential. The attenuation impedance (44) comprises an attenuation inductance (44A).

    Abstract translation: 该音频放大器（10）包括： - 用于待放大的音频信号的输入端（12）和用于从放大的音频信号馈送负载（16）的输出端（14）; - - 用于产生非常高线性和低输出阻抗的电压的参考电压发生器（18），能够接收待放大的音频信号作为输入; - 电源电流发生器（19），其包括电源电压发生器（21），其输出经由耦合阻抗（30）连接到参考电压发生器（18）的输出。 耦合阻抗（30）包括串联安装在参考发生器（18）的输出端和电源电压发生器（21）的输出端之间的两个耦合电感（32A，32B）和连接中点耦合电感的衰减阻抗（44） 两个耦合电感（32A，32B）和参考电位之间的点。 衰减阻抗（44）包括衰减电感（44A）。

    MEMORY EFFECT REDUCTION USING LOW IMPEDANCE BIASING
    44.
    发明公开
    MEMORY EFFECT REDUCTION USING LOW IMPEDANCE BIASING 审中-公开
    偏倚低阻抗记忆效应还原

    公开(公告)号：EP3066753A1

    公开(公告)日：2016-09-14

    申请号：EP14857354.6

    申请日：2014-11-04

    Applicant: Marvell World Trade Ltd.

    Inventor： SIGNOFF, David, M. ,  HE, Ming ,  LOEB, Wayne, A.

    IPC: H03F1/32 ,  H03F1/30

    CPC classification number: H03F3/245 ,  G05F1/46 ,  H03F1/301 ,  H03F1/308 ,  H03F3/195 ,  H03F3/265 ,  H03F3/505 ,  H03F2200/24 ,  H03F2200/451 ,  H03F2200/453 ,  H03F2200/534 ,  H03F2200/555 ,  H03F2200/69 ,  H03H7/0107

    Abstract: A circuit includes a bias circuit for a biased transistor. The bias circuit includes a master-slave source follower circuit, a reference transistor, and a bias circuit voltage output coupled to the biased transistor and configured to provide a bias voltage. The reference transistor has a transconductance substantially identical to a transconductance of the biased transistor. A signal ground circuit may be coupled between the biased transistor and one or more components of the bias circuit that do not generate significant return currents to a power supply ground. A method includes generating a current in a reference transistor according to a first voltage generated using a master source follower circuit, generating a second voltage substantially identical to the first voltage using a slave source follower circuit, and providing the second voltage to a biased transistor. The reference transistor has a transconductance substantially identical to a transconductance of the biased transistor.

    TUNABLE WIDE BAND DRIVER AMPLIFIER
    47.
    发明公开
    TUNABLE WIDE BAND DRIVER AMPLIFIER 审中-公开
    ABSTIMMBARER BREITBANDIGERTREIBERVERSTÄRKER

    公开(公告)号：EP2932594A1

    公开(公告)日：2015-10-21

    申请号：EP13818898.2

    申请日：2013-12-17

    Applicant: Qualcomm Incorporated

    Inventor： FENG, Haigang ,  PANIKKATH, Vinod V. ,  SANKARANARAYANAN, Janakiram G. ,  ASURI, Bhushan Shanti

    IPC: H03F1/22 ,  H03F3/193 ,  H03F3/24 ,  H03F1/42 ,  H03F1/56

    CPC classification number: H03G9/24 ,  H03F1/223 ,  H03F1/42 ,  H03F1/565 ,  H03F3/193 ,  H03F3/245 ,  H03F2200/06 ,  H03F2200/111 ,  H03F2200/36 ,  H03F2200/378 ,  H03F2200/387 ,  H03F2200/39 ,  H03F2200/391 ,  H03F2200/534

    Abstract: A tunable wide band driver amplifier is disclosed. In an exemplary embodiment, an apparatus includes a first band selection circuit selectively connected between an output terminal of an amplifier and a circuit ground. The first band selection circuit configured to adjust an amplification band from a first frequency band to a second frequency band. The apparatus also includes a first harmonic reduction circuit selectively connected between the first band selection circuit and the circuit ground and configured to reduce 2nd harmonic frequencies associated with the first frequency band when the amplification band is set to the first frequency band.

    Abstract translation: 公开了一种可调宽带驱动放大器。 在示例性实施例中，一种装置包括选择性地连接在放大器的输出端和电路接地之间的第一频带选择电路。 第一频带选择电路，被配置为将放大频带从第一频带调整到第二频带。 该装置还包括选择性地连接在第一频带选择电路和电路地之间的第一谐波减小电路，并被配置为当放大频带被设置为第一频带时，减少与第一频带相关联的二次谐波频率。

    Third order intermodulation cencellation for RF transconductors
    48.
    发明公开
    Third order intermodulation cencellation for RF transconductors 有权
    互调拆除三阶用于RF反式头

    公开(公告)号：EP2605402A3

    公开(公告)日：2015-06-17

    申请号：EP12193843.5

    申请日：2012-11-22

    Applicant: Linear Technology Corporation

    Inventor： Myers, John P. ,  Stroet, Petrus M.

    IPC: H03F1/32 ,  H03F3/19 ,  H03F3/45

    CPC classification number: H03F1/3223 ,  H03F1/3211 ,  H03F3/19 ,  H03F3/45085 ,  H03F2200/534 ,  H03F2203/45621 ,  H03F2203/45631 ,  H03F2203/45644 ,  H03F2203/45702

    Abstract: A mixer in an RF demodulator includes a transconductance amplifier (12) that converts an RF input voltage (Vin), applied to the base of a first bipolar transistor (Q1), to a first output current (I) containing third order intermodulation (IM3) products, an IM3 canceller (14) being connected in parallel with the transconductance amplifier. The base of a second bipolar transistor (Q2) in the IM3 canceller is coupled to the DC component of Vin, and the AC component of Vin is coupled to the emitter of the second bipolar transistor, such that the currents though the first bipolar transistor and the currents through the second bipolar transistor change oppositely. The collectors of the transistors are coupled together. The values of components in the IM3 canceller are set during simulation and calibration so that the current generated by the IM3 canceller substantially cancels out IM3 distortion in the first current or other current generated in a demodulator of Vin.

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