利索-全球专利检索

  1. Login
  2. Sign Up

Search Results

19 records (took 0.01 seconds)

    Low noise amplifier
    1.
    发明公开
    Low noise amplifier 有权
    RauscharmerVerstärker

    公开(公告)号：EP2466746A1

    公开(公告)日：2012-06-20

    申请号：EP10195354.5

    申请日：2010-12-16

    Applicant: TELEFONAKTIEBOLAGET LM ERICSSON (publ)

    Inventor： Mu, Fenghau

    IPC: H03F1/22 ,  H03F1/34 ,  H03F3/45

    CPC classification number: H03F3/193 ,  H03F1/223 ,  H03F1/347 ,  H03F3/45179 ,  H03F2200/06 ,  H03F2200/09 ,  H03F2200/294 ,  H03F2200/541 ,  H03F2203/45386 ,  H03F2203/45394 ,  H03F2203/45516 ,  H03F2203/45522 ,  H03F2203/45528 ,  H03F2203/45544 ,  H03F2203/45554 ,  H03F2203/45591 ,  H03F2203/45621 ,  H03F2203/45631 ,  H03F2203/45638 ,  H03F2203/45662 ,  H03F2203/45731

    Abstract: A low noise amplifier comprises at least one amplifying transistor (Ts1; Ts2) configured in a common source configuration to receive an input signal (RFin) at a gate terminal and provide an amplified signal at a drain terminal and at least one feedback path arranged to couple a part of the amplified signal back to the gate terminal and comprising a feedback impedance. The low noise amplifier further comprises a self-coupled step-up transformer having at least one primary winding (Lp) connected to a supply voltage (Vdd) and the drain terminal of the at least one amplifying transistor and at least one self-coupled secondary inductor winding (Lf1; Lf2) arranged in the feedback path. The low noise amplifier provides a better suppression for out-band interference and at the same time it has a wider input match bandwidth, decent conversion gain and decent noise figure without increasing power consumption.

    Abstract translation: 低噪声放大器包括至少一个配置在公共源配置中的放大晶体管（Ts1; Ts2），以在栅极端处接收输入信号（RFin），并在漏极端提供放大信号，并将至少一个反馈路径布置成 将放大的信号的一部分耦合到栅极端并包括反馈阻抗。 低噪声放大器还包括自耦合升压变压器，其具有连接到电源电压（Vdd）的至少一个初级绕组（Lp）和至少一个放大晶体管的漏极端子和至少一个自耦合次级 电感绕组（Lf1; Lf2）布置在反馈路径中。 低噪声放大器为带外干扰提供了更好的抑制，同时具有更宽的输入匹配带宽，良好的转换增益和体面的噪声系数，而不增加功耗。

    Third order intermodulation cencellation for RF transconductors
    4.
    发明公开
    Third order intermodulation cencellation for RF transconductors 有权
    互调拆除三阶用于RF反式头

    公开(公告)号：EP2605402A3

    公开(公告)日：2015-06-17

    申请号：EP12193843.5

    申请日：2012-11-22

    Applicant: Linear Technology Corporation

    Inventor： Myers, John P. ,  Stroet, Petrus M.

    IPC: H03F1/32 ,  H03F3/19 ,  H03F3/45

    CPC classification number: H03F1/3223 ,  H03F1/3211 ,  H03F3/19 ,  H03F3/45085 ,  H03F2200/534 ,  H03F2203/45621 ,  H03F2203/45631 ,  H03F2203/45644 ,  H03F2203/45702

    Abstract: A mixer in an RF demodulator includes a transconductance amplifier (12) that converts an RF input voltage (Vin), applied to the base of a first bipolar transistor (Q1), to a first output current (I) containing third order intermodulation (IM3) products, an IM3 canceller (14) being connected in parallel with the transconductance amplifier. The base of a second bipolar transistor (Q2) in the IM3 canceller is coupled to the DC component of Vin, and the AC component of Vin is coupled to the emitter of the second bipolar transistor, such that the currents though the first bipolar transistor and the currents through the second bipolar transistor change oppositely. The collectors of the transistors are coupled together. The values of components in the IM3 canceller are set during simulation and calibration so that the current generated by the IM3 canceller substantially cancels out IM3 distortion in the first current or other current generated in a demodulator of Vin.

    Low noise amplifier and differential amplifier
    5.
    发明公开
    Low noise amplifier and differential amplifier 有权
    RauscharmerVerstärkerundDifferenzverstärker

    公开(公告)号：EP2056448A2

    公开(公告)日：2009-05-06

    申请号：EP08018346.0

    申请日：2008-10-20

    Applicant: Icom Incorporated

    Inventor： Yamaguchi, Kouichiro

    IPC: H03F1/22 ,  H03F1/26 ,  H03F1/34 ,  H03F3/45 ,  H03F3/50

    CPC classification number: H03F1/26 ,  H03F1/14 ,  H03F1/22 ,  H03F1/347 ,  H03F3/19 ,  H03F3/45089 ,  H03F3/50 ,  H03F2200/117 ,  H03F2200/153 ,  H03F2200/294 ,  H03F2200/36 ,  H03F2200/372 ,  H03F2200/451 ,  H03F2203/45516 ,  H03F2203/45528 ,  H03F2203/45621 ,  H03F2203/45722 ,  H03F2203/45731 ,  H03F2203/5009 ,  H03F2203/5021

    Abstract: In a double-loop negative feedback low noise amplifier having double negative feedback paths by a feedback transformer (23) and a feedback resistor (44) added to a cascode amplifier comprising transistors (24, 27) and a resistor (30), a phase compensation circuit comprising a capacitor (42) and a resistor (45) is added between the output terminal of the double-loop negative feedback low noise amplifier and the input terminal of the cascode amplifier, i.e., the input terminal of the input transistor (24), and a phase compensation circuit comprising a capacitor (43) and a resistor (28) is added to the upper-stage transistor of the cascode amplifier, i.e., the input terminal of the upper-stage transistor (27). Those phase compensation circuits enable a low noise negative feedback amplifier which maintains a high feedback loop gain to a high frequency band, has a wider bandwidth than a conventional one, and has a high dynamic range.

    Abstract translation: 在具有由反馈变压器（23）和反馈电阻（44）加上包括晶体管（24,27）和电阻器（30）的共源共栅放大器的双负反馈路径的双回路负反馈低噪声放大器中， 包括电容器（42）和电阻器（45）的补偿电路被添加在双回路负反馈低噪声放大器的输出端和共源共栅放大器的输入端之间，即输入晶体管（24）的输入端 ），并且包括电容器（43）和电阻器（28）的相位补偿电路被添加到级联放大器的上级晶体管，即上级晶体管（27）的输入端子。 这些相位补偿电路使得能够将高反馈环路增益保持在高频带的低噪声负反馈放大器具有比常规带宽更宽的带宽，并且具有高动态范围。

    DIFFERENTIAL INDUCTOR BASED LOW NOISE AMPLIFIER
    9.
    发明公开
    DIFFERENTIAL INDUCTOR BASED LOW NOISE AMPLIFIER 有权
    低噪音差分放大器线圈上BASIS

    公开(公告)号：EP1875605A1

    公开(公告)日：2008-01-09

    申请号：EP06751524.7

    申请日：2006-04-25

    Applicant: Intel Corporation

    Inventor： CHANG, Yuyu

    IPC: H03F3/45 ,  H03F3/193

    CPC classification number: H03F3/193 ,  H03F3/45188 ,  H03F2200/294 ,  H03F2203/45386 ,  H03F2203/45621 ,  H03F2203/45731

    Abstract: The low noise amplifier comprises a pair of differential amplifier transistors (Ml, M2) having their drains connected to respective cascode transistors (M3, M4) . While the gates of the amplifier transistors (Ml, M2) are connected to an input differential inductor (Ll) for receiving an RF input signal, the sources of the amplifier transistors (Ml, M2) are connected to a source differential inductor (L2) . The drains of the cascode transistors (M3, M4) are connected to a load differential inductor (L3) and to the inputs of a buffer circuit (260) comprising two source followers (M0l, M02) . The tail current for the differential amplifier is provided by a current source (272) via a current mirror (M5, M6) .

    A GALVANIC ISOLATION CIRCUIT, CORRESPONDING SYSTEM AND METHOD
    10.
    发明公开
    A GALVANIC ISOLATION CIRCUIT, CORRESPONDING SYSTEM AND METHOD 审中-公开
    一种电流隔离电路，相应的系统和方法

    公开(公告)号：EP3291446A1

    公开(公告)日：2018-03-07

    申请号：EP17161341.7

    申请日：2017-03-16

    Applicant: STMicroelectronics S.r.l.

    Inventor： RAGONESE, Egidio ,  SPINA, Nunzio ,  PARISI, Alessandro ,  LOMBARDO, Pierpaolo ,  GRECO, Nunzio ,  PALMISANO, Giuseppe

    IPC: H03F3/45 ,  H04L25/02 ,  H01F19/08

    CPC classification number: H04B1/10 ,  H01F19/04 ,  H01F2019/085 ,  H03F3/45183 ,  H03F3/45632 ,  H03F2203/45084 ,  H03F2203/45621 ,  H03F2203/45642 ,  H03F2203/45704 ,  H04L25/02 ,  H04L25/0266 ,  H04L25/0272

    Abstract: A galvanic isolation circuit (GI) includes a differential transformer (20) having primary (21) and secondary (22) windings for transmission of signals over a carrier (DT) between the primary (21) and the secondary (22) windings of the transformer. The primary (21) and secondary (22) windings have a galvanic isolation oxide layer (23) therebetween and include center taps (21a, 22a) providing low-impedance paths for dc and low frequency components of common-mode currents through the differential transformer (20). A pass-band stage (24) coupled to the secondary winding (22) of the transformer (20) is configured for permitting propagation of signals over said carrier through the pass-band amplifier stage (24) while providing rejection of common-mode noise.

    Abstract translation: 电流隔离电路（GI）包括具有主（21）和副（22）绕组的差动变压器（20），用于通过载波（DT）传输信号在主绕组（21）和次（22）绕组之间 变压器。 初级绕组（21）和次级绕组（22）在它们之间具有电隔离氧化物层（23）并且包括中心抽头（21a，22a），其为通过差分变压器的共模电流的dc和低频分量提供低阻抗路径 （20）。 耦合到变压器（20）的次级绕组（22）的通带级（24）被配置为允许信号在所述载波上通过通带放大器级（24）传播，同时提供对共模噪声 。

Patent Agency Ranking