摘要:
A system for writing to, and reading from, optical media (10). For writing, the media changes when subjected to high intensity modulated light representing an image, such that the image is recorded. A deformable micro-mirror device (DMD)(130) receives electrical input representing the image to be recorded. A high intensity light source (120) illuminates the DMD (130), which reflects modulated light to an imaging lens (140). The lens focusses the image onto the media (160). To record multiple images on the same media, various means provide for scanning across the media. For reading, the media is illuminated with uniform low intensity light. The DMD provides this uniform light, which is transmitted through a pre-recorded media to an image capture device (170).
摘要:
A system for writing to, and reading from, optical media (10). For writing, the media changes when subjected to high intensity modulated light representing an image, such that the image is recorded. A deformable micro-mirror device (DMD)(130) receives electrical input representing the image to be recorded. A high intensity light source (120) illuminates the DMD (130), which reflects modulated light to an imaging lens (140). The lens focusses the image onto the media (160). To record multiple images on the same media, various means provide for scanning across the media. For reading, the media is illuminated with uniform low intensity light. The DMD provides this uniform light, which is transmitted through a pre-recorded media to an image capture device (170).
摘要:
A fully optical random access memory device is disclosed having an opto-electronic substrate. A write beam, having a wavelength within the absorption band of the opto-electronic substrate, and a read beam, having a wavelength outside the absorption band of the opto-electronic substrate, are used to read and write information to the fully optical random access memory (26). The noninvasive optical reading of information provides a device capable of sub-nanosecond access times.
摘要:
A semiconductor device is disclosed in which a long interaction path length is provided for a non-invasive probe beam. In a preferred embodiment, mirror surfaces (24, 26) are etched in the surface of the semiconductor substrate (10′) which are used to reflect the probe beam along the longest dimension of a charge carrier region (14′) of the semiconductor device. Interaction between the probe beam and the charge carriers present in the region is thereby enhanced.
摘要:
The device comprises a recording-reading unit (1) and a mechanism (2) for storing and replacing the information carriers. The information carriers (5) have a cylindrical shape and are mounted with the possibility of rotation around their axes, in the mechanism (2) for storing and replacing the information carriers. The device relates to computer technology and may be used in the external memory of electronic computers.
摘要:
A memory comprises a multilayer film (1) in which each layer (2) is capable of carrying a charge, built up by successive deposition of a plurality of monomolecular layers (2), at least one of which has been deposited by a process of chemisorption and a photo-injector layer(D) is located on one side of the film for introducing charges into the film in a time sequence which corresponds to the information to be carried. Means (6) are provided for applying a voltage between the faces of the film to cause the charge carried by any layer to be transferred to the adjacent layer. The sequence of charges carried by the film may be read out by a photon-emitting electron arrival detector (F) on the opposite side ofthefilm, or by a method of current differentiation. The film (1) is preferably formed of a polydiacetylene.
摘要:
An array (10) of charge storage devices (11) each including a pair of closely coupled conductor-insulator-semiconductor celles (12; 14, 15), one a row line (X) connected cell (12) and the other a column line (Y) connected cell (14, 15), is provided on a common semiconductor substrate (21). Readout (81, 116) of the charges stored in a row of devices is accomplished by transferring the charge in each of the devices of an addressed (81) row of devices in one direction between the row line (X) connected cell (12) and the column line (Y) connected cells (14, 15) of a device in sequence (116) and sensing (71-73) the resultant current flow in the row line (X) of the addressed row of devices. Current sensing leads to simplified readout circuitry and operation.