公开(公告)号：EP3013995A1

公开(公告)日：2016-05-04

申请号：EP14816784.4

申请日：2014-06-25

Applicant: Veeco Instruments Inc.

Inventor： LABERE, Rikki Scott ,  BRESNAHAN, Richard Charles ,  PRIDDY, Scott Wayne ,  READINGER, Eric, Daniel

IPC: C23C14/22

CPC classification number: C23C14/56 ,  C23C14/246 ,  H01L51/001

Abstract: Systems are provided that include one or more retractable deposition source assemblies that eliminate the need for a bellows, but do not require breaking the ultra-high vacuum of a growth module for source replacement or recharging with deposition material. Systems of the present invention may include source heads that allow for a differential pumping option that provides marked improvement in base pressure around the source head (and material) that provides longer lifetimes for sources in corrosive, reactive or oxidizing environments. In addition, systems of the invention do not require an entire growth module to be vented to refill or repair an effusion source. Instead, for maintenance events that are tied to a specific source, a retractable source assembly of the present invention allows the sources to be withdrawn from the system, isolated from the growth environment, and removed without venting the entire chamber of the growth module.

Abstract translation: 提供了包括一个或多个可缩回的沉积源组件的系统，其消除对波纹管的需要，但不需要破坏生长模块的超高真空以用于用沉积材料进行源替换或再充电。 本发明的系统可以包括源头，其允许差分泵送选项，其提供围绕源头（和材料）的基础压力的显着改进，其为腐蚀性，反应性或氧化环境中的源提供更长的寿命。 此外，本发明的系统不需要将整个生长模块排放以再填充或修复渗出源。 相反，对于与特定来源相关的维护事件，本发明的可伸缩源组件允许源从生长环境中分离出来，并且在没有排放增长模块的整个室的情况下被移除。

公开(公告)号：EP2882884A1

公开(公告)日：2015-06-17

申请号：EP13753087.9

申请日：2013-08-05

Applicant: Plansee SE ,  Veeco Instruments Inc.

Inventor： MARTINZ, Hans-Peter ,  SULIK, Manfred ,  BOGUSLAVSKIY, Vadim

IPC: C23C16/46 ,  H05B3/14 ,  H05B3/24

CPC classification number: C23C16/46 ,  B22F5/006 ,  B22F7/004 ,  H05B3/12 ,  H05B3/143 ,  H05B3/22

Abstract: The invention is related to a heating element (10) comprising a heating body (20) which is directly covered at least partly with a porous sintered coating (30), wherein the heating body (20) the porous sintered coating (30) each comprises at least 90 % by weight of tungsten.

公开(公告)号：EP2850221A1

公开(公告)日：2015-03-25

申请号：EP13791326.5

申请日：2013-05-09

Applicant: Veeco Instruments Inc.

Inventor： BARRISS, Louise, S. ,  COMUNALE, Richard, A. ,  FREMGEN, Roger, P. ,  GURARY, Alexander, I. ,  LUSE, Todd, A. ,  MILGATE, III, Robert, White ,  POLLOCK, John, D.

IPC: C23C16/44 ,  C23C16/52

CPC classification number: C23C16/4584 ,  C23C16/4586 ,  C23C16/46 ,  C23C16/52 ,  H01L21/68785 ,  H01L21/68792

Abstract: A rotating disk reactor for chemical vapor deposition includes a vacuum chamber and a ferrofluid feedthrough comprising an upper and a lower ferrofluid seal that passes a motor shaft into the vacuum chamber. A motor is coupled to the motor shaft and is positioned in an atmospheric region between the upper and the lower ferrofluid seal. A turntable is positioned in the vacuum chamber and is coupled to the motor shaft so that the motor rotates the turntable at a desired rotation rate. A dielectric support is coupled to the turntable so that the turntable rotates the dielectric support when driven by the shaft. A substrate carrier is positioned on the dielectric support in the vacuum chamber for chemical vapor deposition processing. A heater is positioned proximate to the substrate carrier that controls the temperature of the substrate carrier to a desired temperature for chemical vapor deposition.

Abstract translation: 用于化学气相沉积的旋转盘式反应器包括真空室和铁磁流体馈通，其包括将电动机轴传递到真空室中的上下铁磁流体密封件。 电动机联接到电动机轴并且位于上部和下部铁磁流体密封件之间的大气区域中。 转盘位于真空室中并联接到电动机上，使得电动机以期望的转速旋转转台。 电介质支撑件联接到转盘，使得当由轴驱动时，转台旋转电介质支架。 衬底载体位于用于化学气相沉积处理的真空室中的电介质支撑体上。 加热器位于基板载体附近，将基板载体的温度控制到用于化学气相沉积的所需温度。

公开(公告)号：EP2776602A1

公开(公告)日：2014-09-17

申请号：EP12847473.1

申请日：2012-11-12

Applicant: Veeco Instruments Inc.

Inventor： ODE, Aiko ,  GEORGE, Jason ,  MAHONEY, Leonard J.

IPC: C23C14/46 ,  C23C14/06

CPC classification number: G02B1/113 ,  C23C14/0057 ,  C23C14/0694 ,  C23C14/3442 ,  C23C14/3464 ,  C23C14/46 ,  Y10T428/24355

Abstract: The presently disclosed technology uses dissociated fluorine (120) and one or both of hydrogen and oxygen (122) to assist the deposition of metal-fluoride thin films having low optical losses using ion sputter deposition. The dissociated fluorine and one or both of hydrogen and oxygen are injected into an enclosure (116) within which the sputter deposition operations occur. The dissociated fluorine and one or both of hydrogen and oxygen assist the sputtering of metal-fluoride material from a target (104) and/or deposition of the sputtered metal-fluoride material (110) on one or more substrates (106).

公开(公告)号：EP1719147B1

公开(公告)日：2014-06-18

申请号：EP05738849.8

申请日：2005-02-22

Applicant: VEECO INSTRUMENTS INC.

Inventor： BURTNER, David, Matthew ,  TOWNSEND, Scott, A. ,  SIEGFRIED, Daniel, E. ,  ZHURIN, Viacheslav, V.

IPC: H01J27/04

CPC classification number: H01J27/04 ,  H01J2237/002 ,  H01J2237/08

公开(公告)号：EP2735020A2

公开(公告)日：2014-05-28

申请号：EP12815170.1

申请日：2012-07-02

Applicant: Veeco Instruments Inc.

Inventor： PARANJPE, Ajit ,  ARMOUR, Eric A. ,  QUINN, William E.

IPC: H01L21/205

CPC classification number: C23C16/4582 ,  C23C16/54 ,  C30B25/025 ,  C30B35/00

Abstract: A multi-chamber CVD system includes a plurality of substrate carriers where each substrate carrier is adapted to support at least one substrate. A plurality of enclosures are each configured to form a deposition chamber enclosing one of the plurality of substrate carriers to maintain an independent chemical vapor deposition process chemistry for performing a processing step. A transport mechanism transports each of the plurality of substrate carriers to each of the plurality of enclosures in discrete steps that allow processing steps to be performed in the plurality of enclosures for a predetermined time. In some embodiments, the substrate carrier can be rotatable.

公开(公告)号：EP2625306A2

公开(公告)日：2013-08-14

申请号：EP11831472.3

申请日：2011-10-04

Applicant: Veeco Instruments Inc.

Inventor： KAMEYAMA, Ikuya

IPC: C23C14/46 ,  C23C14/34

CPC classification number: C23C14/46 ,  H01J27/024 ,  H01J37/08 ,  H01J2237/0656 ,  H01J2237/083 ,  H01J2237/3142 ,  H01J2237/3151 ,  H01J2237/31701

Abstract: Non-elliptical ion beams (508) and plumes (510) of sputtered material can yield a relatively uniform wear pattern on a destination target (504) and a uniform deposition of sputtered material on a substrate assembly (506). The non-elliptical ion beams (508) and plumes (510) of sputtered material impinge on rotating destination targets (504) and substrate assemblies (506). A first example ion beam grid (302) and a second example ion beam grid (304) each have patterns of holes with an offset between corresponding holes. The quantity and direction of offset determines the quantity and direction of steering individual beamlets passing through corresponding holes in the first and second ion beam grids (302, 304). The beamlet steering as a whole creates a non-elliptical current density distribution within a cross- section of an ion beam (508) and generates a sputtered material plume (510) that deposits a uniform distribution of sputtered material onto a rotating substrate assembly (506).

公开(公告)号：EP2577722A1

公开(公告)日：2013-04-10

申请号：EP11727070.2

申请日：2011-06-07

Applicant: Veeco Instruments Inc.

Inventor： LUSE, Todd, Arthur ,  PARANJPE, Ajit, Pramod ,  CELARU, Adrian ,  SCANDARIATO, Joseph ,  TANG, Quinfu

IPC: H01L21/687

CPC classification number: H01L21/68771 ,  C23C16/4584 ,  H01L21/68764

Abstract: Wafer carriers and methods for moving wafers in a reactor. The wafer carrier (220) may include a platen (215) with a plurality of compartments and a plurality of wafer platforms (210). The platen (215) is configured to rotate about a first axis. Each of the wafer platforms (210) is associated with one of the compartments and is configured to rotate about a respective second axis relative to the respective compartment (770). The platen (215) and the wafer platforms (210) rotate with different angular velocities to create planetary motion therebetween. The method may include rotating a platen (215) about a first axis of rotation. The method further includes rotating each of a plurality of wafer platforms (210) carried on the platen (215) and carrying the wafers (200) about a respective second axis of rotation and with a different angular velocity than the platen (215) to create planetary motion therebetween.

公开(公告)号：EP2562290A2

公开(公告)日：2013-02-27

申请号：EP12193897.1

申请日：2009-08-28

Applicant: Veeco Instruments Inc.

Inventor： Volf, Boris ,  Soderman, Breid ,  Armour, Eric, A.

IPC: C23C16/458 ,  C23C16/46 ,  H01L21/687

CPC classification number: H01L21/68735 ,  C23C16/4583 ,  C23C16/4584 ,  C23C16/46 ,  H01L21/67103 ,  H01L21/68764 ,  H01L21/68771

Abstract: In chemical vapor deposition apparatus, a wafer carrier (32) has a top surface (34) holding the wafers and a bottom surface (36) heated by radiant heat transfer from a heating element (28). The bottom surface (36) of the wafer carrier is non-planar due to features such as depressions (54) so that the wafer carrier has different thickness at different locations. The thicker portions of the wafer carrier have higher thermal resistance. Differences in thermal resistance at different locations counteract undesired non-uniformities in heat transfer to the wafer. The wafer carrier may have pockets with projections (553, 853) for engaging spaced-apart locations on the edges of the wafer.

Abstract translation: 在化学气相沉积装置中，晶片载体（32）具有保持晶片的顶表面（34）和从加热元件（28）辐射热传递加热的底表面（36）。 由于诸如凹陷（54）的特征，晶片载体的底表面（36）是非平面的，使得晶片载体在不同位置具有不同的厚度。 晶片载体的较厚部分具有较高的热阻。 不同位置的热阻差异抵消了向晶片传热的不均匀不均匀性。 晶片载体可以具有用于接合晶片边缘上的间隔开的位置的突起（553,853）的凹穴。

公开(公告)号：EP2543063A2

公开(公告)日：2013-01-09

申请号：EP11751170.9

申请日：2011-03-01

Applicant: Veeco Instruments Inc.

Inventor： MITROVIC, Bojan ,  MANGUM, Joshua ,  QUINN, William, E.

IPC: H01L21/683 ,  H01L21/205 ,  C23C16/458

CPC classification number: H01L21/68764 ,  C23C16/303 ,  C23C16/45563 ,  C23C16/45587 ,  C23C16/4584 ,  C23C16/4585 ,  H01L21/68735 ,  H01L21/68771

Abstract: A wafer carrier includes a body defining a central axis, a generally planar top surface perpendicular to the central axis, and pockets recessed below the top surface for receiving wafers. The body can include a lip projecting upwardly around the periphery of the top surface. The lip can define a lip surface sloping upwardly from the planar top surface in a radially outward direction away from the central axis. The body can be adapted for mounting on a spindle of a processing apparatus so that the central axis of the body is coaxial with the spindle. The lip can improve the pattern of gas flow over the top surface of the wafer carrier.

Abstract translation: 晶片载体包括限定中心轴线的主体，垂直于中心轴线的大致平坦的顶表面以及凹陷在顶表面下方用于接收晶片的凹穴。 主体可以包括围绕顶表面的周边向上突出的唇部。 唇部可限定从平坦顶部表面向远离中心轴线的径向向外方向向上倾斜的唇部表面。 该主体可以适用于安装在加工设备的主轴上，使得主体的中心轴线与主轴同轴。 该唇可以改善晶片载体上表面上的气体流动模式。