公开(公告)号：EP1658632A2

公开(公告)日：2006-05-24

申请号：EP04740521.2

申请日：2004-07-01

Applicant: Ion-Tof GmbH

Inventor： KOLLMER, Felix ,  HOERSTER, Peter

IPC: H01J49/10

CPC classification number: H01J49/16 ,  H01J27/26 ,  H01J49/40

Abstract: The invention relates to a mass spectrometer comprising an ion source for producing a primary ion beam, which has a heatable ion emitter coated by a liquid-metal layer, which is essentially comprised of pure metallic bismuth or of a low-melting-point alloy containing, in essence, bismuth. A bismuth ion mixed beam can be emitted by the ion emitter under the influence of an electric field. From said bismuth ion mixed beam, one of a number of bismuth ion types, whose mass is a multiple of the monatomic singly or multiply charged bismuth ions Bi1p+, is to be filtered out in the form of a mass-pure ion beam, which is solely comprised of ions of a type Binp+, in which n≥2 and p≥1, and n and p are each a natural number.

公开(公告)号：EP1448769A4

公开(公告)日：2006-02-01

申请号：EP02744678

申请日：2002-06-25

Applicant: IONFINITY LLC

Inventor： HARTLEY FRANK T

IPC: G01N27/62 ,  C12M1/00 ,  C12M1/42 ,  C12N15/09 ,  G01N1/28 ,  G01N33/483 ,  G01N33/50 ,  H01J27/00 ,  H01J27/02 ,  H01J27/08 ,  H01J37/08 ,  H01J49/04 ,  H01J49/10 ,  H01J49/16 ,  H01J49/40 ,  C12N13/00 ,  G01N24/00 ,  H01J7/24

CPC classification number: H01J49/168 ,  G01N2223/612 ,  H01J3/027 ,  H01J3/04 ,  H01J27/02 ,  H01J27/26 ,  H01J37/08 ,  H01J49/0018 ,  H01J49/0427 ,  H01J2237/061 ,  H01J2237/0815 ,  H01J2237/317

Abstract: A soft ionization device is disclosed that comprises a series of electrodes (120, 122) having spacing less than the means free path of the molecules to be ionized. In some embodiments, the soft ionization device (99) is used in various applications that require ion or electron sources such as biological or chemical reactors, ion milling, and numerous replacements for conventional hot cathode systems. In another embodiment, a valence spectrometer is disclosed that is configured to variably ionize molecules (301) by their valiancy. In other embodiments, the ionization device is coupled to a spectrometer for the characterization of biological matter. Also disclosed is a preconditioner for preparing biological matter to be ionized.

公开(公告)号：EP0727095A1

公开(公告)日：1996-08-21

申请号：EP94930432.0

申请日：1994-09-14

Applicant: ROSEMOUNT ANALYTICAL INC.

Inventor： SITTLER, Fred, C.

IPC: H01J27 ,  H01J49

CPC classification number: H01J49/168 ,  H01J27/26 ,  H01J49/0018 ,  H01J49/288

Abstract: A micromachined mass spectrometer (10) includes an ionizer (30), a separation region (32) and a detector (34). The ionizer (30) is formed from an upper electrode (36), a center electrode (38) and a lower electrode (40). Ionization (30) of a sample gas takes place around an edge (48) of the center electrode (38). Accelerating electrodes (54, 56) extract ionized particles from the ionizer (30). Ionized particles are accelerated through the separation region (32). A magnetic field is applied in a direction perpendicular to travel of the ionized particles through the separation region (32) causing the trajectory of the ionized particles to bend. The mass spectrometer (10) is formed using micromachined techniques and is carried on a single substrate (24).

公开(公告)号：EP0399374B1

公开(公告)日：1995-04-19

申请号：EP90109369.0

申请日：1990-05-17

Applicant: MICRION CORPORATION

Inventor： Ward, Billy W. ,  Percival, Randall G.

IPC: H01J27/26 ,  H01J37/08

CPC classification number: H01J27/26 ,  H01J37/08

公开(公告)号：EP0405855A2

公开(公告)日：1991-01-02

申请号：EP90306848.4

申请日：1990-06-22

Applicant: HITACHI, LTD.

Inventor： Kamata, Tadashi ,  Sugiura, Jun ,  Honda, Mitsuharu

IPC: H01J37/02 ,  H01J37/30 ,  H01J37/317

CPC classification number: H01J37/3171 ,  H01J27/26 ,  H01J37/026 ,  H01J37/3007 ,  H01L21/265

Abstract: Herein disclosed are an ion injecting apparatus and a process for fabricating a semiconductor inte­grated circuit device by using the ion implanting ap­paratus. When a wafer at the step of fabricating the semiconductor integrated circuit device, i.e., a Si wafer is to be implanted with ions, an electrode or the like made of a Si material is used to achieve a high throughput and a high density implantation so as to prevent the occurrence of the contamination due to the sputtering of the electrode member over the beam passage in the ion implanting apparatus during the high density beam implantation.

Abstract translation: 来游离缺失盘是在离子注入装置和用于通过使用离子注入装置中的半导体集成电路器件的制造方法。 当在半导体集成电路装置中，即，制造的步骤的晶片，Si晶片是与离子到电极或由Si材料的等被植入用于实现高吞吐量和高密度植入，从而 以防止污染的发生因过在离子注入装置的束通过所述电极构件的高密度束注入在溅射。

公开(公告)号：EP0262219B1

公开(公告)日：1990-04-25

申请号：EP87903757.0

申请日：1987-03-09

Applicant: Hughes Aircraft Company ,  Government of the United States ,  Oregon Graduate Institute of Science and Technology

Inventor： CLARK, William, M., Jr. ,  UTLAUT, Mark, W. ,  WYSOCKI, Joseph, A. ,  BEHRENS, Robert, G. ,  SZKLARZ, Eugene, G. ,  STORMS, Edmund, K. ,  SWANSON, Lynwood, W. ,  BELL, Anthony, E.

IPC: H01J27/26

CPC classification number: H01J37/08 ,  H01J27/26

Abstract: A liquid metal ion source (10) and alloy for the simultaneous ion evaporation of arsenic and boron, arsenic and phosphorus, or arsenic, boron and phosphorus. The ionic species to be evaporated are contained in palladium-arsenic-boron and palladium-arsenic-boron-phosphorus alloys. The ion source (10), including an emitter means such as a needle emitter (12) and a source means such as U-shaped heater element (14), is preferably constructed of rhemium and tungsten, both of which are readily fabricated. The ion sources (10) emit continuous beams of ions having sufficiently high currents of the desired species to be useful in ion implantation of semiconductor wafers for preparing integrated circuit devices. The sources are stable in operation, experience little corrosion during operation, and have long operating lifetimes.

公开(公告)号：EP0091777B1

公开(公告)日：1989-01-11

申请号：EP83301924.3

申请日：1983-04-06

Applicant: Hitachi, Ltd.

Inventor： Ishitani, Tohru ,  Tamura, Hifumi ,  Shimase, Akira

IPC: H01J27/22

CPC classification number: H01J27/26

公开(公告)号：EP0248914A1

公开(公告)日：1987-12-16

申请号：EP87903539.2

申请日：1986-12-05

Applicant: HITACHI, LTD.

Inventor： UMEMURA, Kaoru ,  ISHITANI, Tohru ,  AIDA, Toshiyuki ,  TAMURA, Hifumi

IPC: H01J1/02 ,  H01J37/08

CPC classification number: H01J27/26

Abstract: A liquid metal ion source which is prepared by melting a material to be ionized. The material to be ionized is an alloy represented by the compositional formula of L X R Y M A wherein X, Y, and A each represents an atomic %, L represents at least one element of Pt, Pd, and Ag, R represents at least one element of As, P and B, M represents at least one element of Ge, Si, and Sb, wherein 5

Abstract translation: 液体金属离子源，其通过熔化待离子化的材料制备。 待离子化的材料是由LXRYMA的组成式表示的合金，其中X，Y和A各自表示原子％，L表示Pt，Pd和Ag中的至少一种元素，R表示至少一种As ，P和B中，M表示Ge，Si和Sb中的至少一种元素，其中5

公开(公告)号：EP0114496A3

公开(公告)日：1985-05-15

申请号：EP83307759

申请日：1983-12-20

Applicant: HITACHI, LTD.

Inventor： Ishitani, Tohru ,  Tamura, Hifumi ,  Umemura, Kaoru

IPC: H01J27/26

CPC classification number: H01J27/26

Abstract: A liquid metal ion source has a carrier strip 3 which melts and holds a substance 5 being ionized, a needle anode 1 located so that its pointed tip projects the ions of the molten substance supplied by the carrier strip, and a draw-out electrode 7 to apply a strong electric field between itself and the anode, thereby drawing out the ions from the pointed tip of the anode. The ion source has a thermal stress-absorbing element 10 installed between the needle anode and its support 2, or a plurality of such members between the carrier strip and its supports, to take up the thermal stresses that would result from the difference in thermal expansion coefficients between the needle anode and the carrier strip when both are secured to their supports, and which would damage the connected components.

Abstract translation: 液体金属离子源具有熔融并保持被离子化的物质5的载体带3，将针状阳极1定位为使其尖端突出由载体带供应的熔融物质的离子和引出电极7 在其自身和阳极之间施加强电场，从而从阳极的尖端引出离子。 离子源具有安装在针阳极及其支撑件2之间的热应力吸收元件10，或者载体带与其支撑件之间的多个这样的构件，以承受由热膨胀差引起的热应力 当两者都固定到其支撑件上时，针阳极和载体带之间的系数，并且将损坏连接的部件。

公开(公告)号：EP0114496A2

公开(公告)日：1984-08-01

申请号：EP83307759.7

申请日：1983-12-20

Applicant: HITACHI, LTD.

Inventor： Ishitani, Tohru ,  Tamura, Hifumi ,  Umemura, Kaoru

IPC: H01J27/26

CPC classification number: H01J27/26

Abstract: A liquid metal ion source has a carrier strip 3 which melts and holds a substance 5 being ionized, a needle anode 1 located so that its pointed tip projects the ions of the molten substance supplied by the carrier strip, and a draw-out electrode 7 to apply a strong electric field between itself and the anode, thereby drawing out the ions from the pointed tip of the anode. The ion source has a thermal stress-absorbing element 10 installed between the needle anode and its support 2, or a plurality of such members between the carrier strip and its supports, to take up the thermal stresses that would result from the difference in thermal expansion coefficients between the needle anode and the carrier strip when both are secured to their supports, and which would damage the connected components.

Abstract translation: 液体金属离子源具有熔融并保持被离子化的物质5的载体带3，将针状阳极1定位为使其尖端突出由载体带供应的熔融物质的离子和引出电极7 在其自身和阳极之间施加强电场，从而从阳极的尖端引出离子。 离子源具有安装在针阳极及其支撑件2之间的热应力吸收元件10，或者载体带与其支撑件之间的多个这样的构件，以承受由热膨胀差引起的热应力 当两者都固定到其支撑件上时，针阳极和载体带之间的系数，并且将损坏连接的部件。