摘要:
Group III nitride based light emitting devices and methods of fabricating Group III nitride based light emitting devices are provided. The emitting devices include an n-type Group III nitride layer, a Group III nitride based active region on the n-type Group III nitride layer and comprising at least one quantum well structure, a Group III nitride layer including indium on the active region, a p-type Group III nitride layer including aluminum on the Group III nitride layer including indium, a first contact on the n-type Group III nitride layer and a second contact on the p-type Group III nitride layer. The Group III nitride layer including indium may also include aluminum.
摘要:
A Light Emitting Diode (LED) component includes a lead frame and an LED that is electrically connected to the lead frame without wire bonds, using a solder layer. The lead frame includes a metal anode pad, a metal cathode pad and a plastic cup. The LED die includes LED die anode and cathode contacts with a solder layer on them. The metal anode pad, metal cathode pad, plastic cup and/or the solder layer are configured to facilitate the direct die attach of the LED die to the lead frame without wire bonds. Related fabrication methods are also described.
摘要:
A light emitter, comprising: at least a first monolithic n-type layer; at least a first monolithic p-type layer; at least a first isolation region; and at least a first electrically conductive via, the monolithic n-type layer comprising at least a first n-type region and a second n-type region; the monolithic p-type layer comprising at least a first p-type region and a second p-type region, the first n-type region and the first p-type region together comprising a first light emitting device, the second n-type region and the second p-type region together comprising a second light emitting device, at least a first part of the first isolation region (1) is between the first n-type region and the second n-type region, (2) is between the first p-type region and the second p-type region, or (3) is both between the first n-type region and the second n-type region, and between the first p-type region and the second p-type region, the first electrically conductive via extending through at least part of the first isolation region.
摘要:
A hybrid reflector system for use in lighting application. The system is particularly well-suited for use with solid state light sources, such as light emitting diodes (LEDs). Embodiments of the system include a bowl-shaped outer reflector and an intermediate reflector disposed inside the bowl and proximate to the light source. The reflectors are arranged to interact with the light emitted from the source to produce a beam having desired characteristics. Some of the light passes through the system without interacting with any of the reflector surfaces. This uncontrolled light, which is already emitting in a useful direction, does not experience optical loss normally associated with one or more reflective bounces. Some of the light emanating from the source at higher angles that would not be emitted within the desired beam angle is reflected by one or both of the reflectors, redirecting that light to achieve a tighter beam.
摘要:
A transistor package includes a lead frame and a gallium nitride (GaN) transistor attached to the lead frame. The lead frame and the GaN transistor are surrounded by an over-mold with a glass transition temperature greater than about 135° Degrees C and a flexural modulus less than about 20 GPa. Using an over-mold with a glass transition temperature greater than about 135° Degrees C and a flexural modulus less than about 20 GPa allows the over-mold to handle the heat produced by the GaN transistor while preventing damage to the GaN transistor due to thermal expansion and/or contraction of the over-mold.