公开(公告)号：EP0353084A2

公开(公告)日：1990-01-31

申请号：EP89307687.7

申请日：1989-07-27

申请人： E.I. DU PONT DE NEMOURS AND COMPANY

发明人： Bohnen, Bruce A. ,  Heikkila, Kurt E. ,  Williams, Rodney K.

IPC分类号： C01B15/017 ,  C09K13/06 ,  C23F1/00

CPC分类号： C09K13/06 ,  C01B15/037 ,  C23F1/16 ,  H05K3/067

摘要： The present invention is directed to a hydrogen peroxide solution stabilized by
wherein X is a linking group and Y is a metal cation or H which compound is soluble in hydrogen peroxide. In a second aspect of the invention, a stabilized hydrogen peroxide solution contains a mineral acid which is suitable for etching a metal surface of a metal substrate such as a printed wiring board.

摘要翻译： 本发明涉及通过稳定的过氧化氢溶液，其中X是连接基团，Y是金属阳离子或该化合物可溶于过氧化氢的H。 在本发明的第二方面，稳定的过氧化氢溶液含有适合于蚀刻诸如印刷线路板的金属基材的金属表面的无机酸。

公开(公告)号：EP3320562A1

公开(公告)日：2018-05-16

申请号：EP16821958.2

申请日：2016-07-07

申请人： Entegris, Inc.

发明人： BILODEAU, Steven ,  COOPER, Emanuel I.

IPC分类号： H01L29/66 ,  H01L21/306

CPC分类号： H01L21/30604 ,  C09K13/06 ,  C09K13/08

摘要： Compositions useful for the selective removal of silicon germanium materials relative to germanium-containing materials and silicon-containing materials from a microelectronic device having same thereon. The removal compositions include at least one diol and are tunable to achieve the required SiGe:Ge removal selectivity and etch rates.

公开(公告)号：EP1920026B1

公开(公告)日：2017-04-12

申请号：EP06771598.7

申请日：2006-05-31

申请人： MacDermid, Incorporated

发明人： FENG, Kesheng ,  KAPADIA, Nilesh ,  CASTALDI, Steve

IPC分类号： C09K13/00

CPC分类号： H05K3/383 ,  C09K13/06 ,  C23F1/18 ,  H05K2203/124

公开(公告)号：EP3025368A1

公开(公告)日：2016-06-01

申请号：EP14829255.0

申请日：2014-07-21

申请人： Cabot Microelectronics Corporation

发明人： DINEGA, Dmitry ,  MOEGGENBORG, Kevin ,  WARD, William ,  MATEJA, Daniel

IPC分类号： H01L21/304

CPC分类号： C09G1/02 ,  B24B1/00 ,  C09G1/00 ,  C09G1/04 ,  C09K3/1463 ,  C09K13/06 ,  H01L21/30625 ,  H01L21/31053 ,  H01L21/3212

摘要： The present invention provides a chemical mechanical polishing method for polishing a substrate comprising silicon dioxide, silicon nitride, and polysilicon. The method comprises abrading a surface of the substrate with a CMP composition to remove at least some silicon dioxide, silicon nitride and polysilicon therefrom. The CMP composition comprising a particulate ceria abrasive suspended in an aqueous carrier having a pH of about 3 to 9.5 and containing a cationic polymer; wherein the cationic polymer consists of a quaternary methacryloyloxyalkylammonium polymer.

公开(公告)号：EP2670887A4

公开(公告)日：2016-04-13

申请号：EP11857813

申请日：2011-12-14

申请人： MACDERMID ACUMEN INC

发明人： KAPADIA NILESH

IPC分类号： C23C22/82 ,  H01L21/3213 ,  H05K3/06 ,  H05K3/38

CPC分类号： C09D5/00 ,  C09J5/02 ,  C09J2400/163 ,  C09J2400/166 ,  C09J2400/226 ,  C09K13/06 ,  C23F1/18 ,  H01L23/3142 ,  H01L23/49586 ,  H01L2924/0002 ,  H05K3/383 ,  H05K2203/122 ,  H05K2203/124 ,  H01L2924/00

摘要： A process for increasing the adhesion of a polymeric material to a metal surface, the process comprising contacting the metal surface with an adhesion promoting composition comprising: 1) an oxidizer; 2) an inorganic acid; 3) a corrosion inhibitor; and 4) an organic phosphonate; and thereafter b) bonding the polymeric material to the metal surface. The organic phosphonate aids in stabilizing the oxidizer and organic components present in the bath and prevents decomposition of the components, thereby increasing the working life of the bath, especially when used with copper alloys having a high iron content.

公开(公告)号：EP2580303A4

公开(公告)日：2016-01-06

申请号：EP11792023

申请日：2011-06-01

申请人： BASF SE

发明人： FERSTL BERTHOLD ,  BRAUN SIMON ,  FESSENBECKER ACHIM

IPC分类号： C11D7/34 ,  C11D7/32 ,  C11D7/36 ,  H01L21/306 ,  H01L21/461 ,  H01L31/18

CPC分类号： H01L31/1804 ,  C09K13/00 ,  C09K13/06 ,  C11D7/3209 ,  C11D7/34 ,  C11D7/36 ,  C11D11/0047 ,  H01L21/306 ,  H01L21/30604 ,  Y02E10/547 ,  Y02P70/521

摘要： An aqueous alkaline etching and cleaning composition for treating the surface of silicon substrates, the said composition comprising: (A) a quaternary ammonium hydroxide; and (B) a component selected from the group consisting of water-soluble acids and their water-soluble salts of the general formulas (I) to (V): (R1—S03-)nXn+ (I), R—P032−(Xn+)3-n (II); (RO—S03-)nXn+ (III), RO—P032−(Xn+)3-n, (IV), and [(RO)2P02−]nXn+ (V); wherein the n=1 or 2; X is hydrogen or alkaline or alkaline-earth metal; the variable R1 is an olefinically unsaturated aliphatic or cycloaliphatic moiety and R is R1 or an alkylaryl moiety; the use of the composition for treating silicon substrates, a method for treating the surface of silicon substrates, and methods for manufacturing devices generating electricity upon the exposure to electromagnetic radiation.

公开(公告)号：EP2888758A1

公开(公告)日：2015-07-01

申请号：EP13830251.8

申请日：2013-08-15

申请人： Cabot Microelectronics Corporation

发明人： JIN, Wiechang ,  REMSEN, Elizabeth

IPC分类号： H01L21/304

CPC分类号： C23F3/06 ,  B24B1/00 ,  C09G1/00 ,  C09G1/02 ,  C09G1/04 ,  C09G1/06 ,  C09K3/1409 ,  C09K3/1463 ,  C09K13/06 ,  C23F3/04 ,  H01L21/30625 ,  H01L21/31053 ,  H01L21/3212

摘要： The present invention provides chemical-mechanical polishing (CMP) methods for polishing a platinum and/or ruthenium containing substrate, and compositions suitable for use in the methods. The polishing compositions used with the methods of the invention, which contain alumina and at least one additive selected from the group consisting of a suppressor, a complexing agent, and an amino compound, allow for platinum and ruthenium to be polished. The methods of the invention provide for tailoring the relative removal rates of platinum, ruthenium, silicon oxide and silicon nitride.

公开(公告)号：EP2875520A1

公开(公告)日：2015-05-27

申请号：EP13819335.4

申请日：2013-07-17

申请人： FUJIFILM Corporation

发明人： KAMIMURA, Tetsuya ,  INABA, Tadashi ,  MURO, Naotsugu ,  NISHIWAKI, Yoshinori

IPC分类号： H01L21/306 ,  H01L21/308

CPC分类号： H01L21/30604 ,  C09K13/00 ,  C09K13/02 ,  C09K13/06 ,  C23F1/00 ,  C23F1/02 ,  C23F1/14 ,  C23F1/26 ,  C23F1/38 ,  C23F1/44 ,  C23G1/106 ,  C23G1/205 ,  H01L21/02063 ,  H01L21/31144 ,  H01L21/32134 ,  H01L21/6704

摘要： A method of etching a semiconductor substrate, having the steps of: preparing an etching liquid by mixing a first liquid with a second liquid to be in the range of pH from 8.5 to 14, the first liquid containing a basic compound, the second liquid containing an oxidizing agent; and then applying the etching liquid to a semiconductor substrate on a timely basis for etching a Ti-containing layer in or on the semiconductor substrate.

公开(公告)号：EP2727977A4

公开(公告)日：2015-04-15

申请号：EP12804272

申请日：2012-06-27

申请人： ASAHI KASEI E MATERIALS CORP

发明人： NAKATA TAKUTO ,  NAKAGAWA NORIKIYO

IPC分类号： C09K13/06 ,  G03F7/004 ,  G03F7/32 ,  H01L21/033 ,  H01L21/3213

CPC分类号： C23F1/16 ,  C09K13/00 ,  C09K13/06 ,  C23F1/18 ,  G03F7/0043 ,  G03F7/32 ,  H01L21/0337 ,  H01L21/32134

摘要： To provide an etchant for copper oxide, control of the etching rate, and etching method using the same for enabling exposed portions to be selectively etched against unexposed portions in the case of performing exposure with laser light using an oxide of copper as a heat-reactive resist material, an etchant of the invention is an etchant for copper oxide to selectively remove a copper oxide of a particular valence from a copper oxide-containing layer containing copper oxides of different valences, and is characterized by containing at least an amino acid, a chelating agent and water, where a weight percentage of the amino acid is higher than that of the chelating agent, and pH thereof is 3.5 or more.

公开(公告)号：EP2818526A1

公开(公告)日：2014-12-31

申请号：EP14174709.7

申请日：2014-06-27

申请人： AIR PRODUCTS AND CHEMICALS, INC.

发明人： Shi, Xiaobo ,  Murella, Krishna P. ,  Schlueter, James Allen ,  Choo, Jae Ouk

IPC分类号： C09G1/02 ,  H01L21/321

CPC分类号： H01L21/3212 ,  B24B1/00 ,  C09G1/00 ,  C09G1/02 ,  C09G1/04 ,  C09G1/06 ,  C09K3/1409 ,  C09K3/1463 ,  C09K13/06 ,  H01L21/30625 ,  H01L21/76898

摘要： Provided are novel chemical mechanical polishing (CMP) slurry compositions for polishing copper substrates and method of using the CMP compositions. The CMP slurry compositions deliver superior planarization with high and tunable removal rates and low defects when polishing bulk copper layers of the nanostructures of IC chips. The CMP slurry compositions also offer the high selectivity for polishing copper relative to the other materials (such as Ti, TiN, Ta, TaN, and Si), suitable for through-silicon via (TSV) CMP process which demands high copper film removal rates.

摘要翻译： 本发明提供用于抛光铜基板以及使用该CMP组合物的方法，新的化学机械抛光（CMP）浆料组合物。 CMP浆料组合物提供优异的平坦化具有高和可调谐去除速率和低的缺陷当抛光IC芯片的纳米结构的块状铜层。 因此，CMP浆料组合物提供高的选择性相对于铜抛光其它材料（颜色：诸如钛，氮化钛，钽，氮化钽，和Si），适用于通孔（TSV）CMP工艺这要求高的铜膜的移除速率穿透硅 ，