公开(公告)号：EP2017895A3

公开(公告)日：2014-02-12

申请号：EP08010248.6

申请日：2008-06-05

申请人： SCHOTT Solar AG

发明人： Frammelsberger, Walter ,  Lechner, Peter

IPC分类号： H01L31/075 ,  H01L31/076 ,  H01L31/0368 ,  H01L31/20

CPC分类号： H01L31/076 ,  H01L31/03685 ,  H01L31/202 ,  Y02E10/545 ,  Y02E10/548 ,  Y02P70/521

摘要： Eine Silizium-Mehrfachsolarzelle weist wenigstens zwei Teilzellen (1, 2) mit jeweils einer p-leitenden Schicht (p1, p2), einer intrinsischen Schicht (il, i2) und einer mit Phosphor dotierten n-leitenden Schicht (n1, n2) auf. Die p-leitende Schicht (p2), die mit der n-leitenden Schicht (n1) der davor angeordneten Teilzelle (1) in Kontakt steht, ist zumindest teilweise nano- oder mikrokristallin ausgebildet.

公开(公告)号：EP2671260A2

公开(公告)日：2013-12-11

申请号：EP12706653.8

申请日：2012-01-30

申请人： Institut Polytechnique de Grenoble ,  Centre National de la Recherche Scientifique

发明人： CHICHIGNOUD, Guy ,  BLANQUET, Elisabeth ,  GELARD, Isabelle ,  JIMENEZ, Carmen ,  SARIGIANNIDOU, Eirini ,  ZAIDAT, Kader ,  WEISS, François ,  PONS, Michel

IPC分类号： H01L31/0236 ,  H01L31/0392 ,  H01L31/18 ,  C22C38/08 ,  C23C16/02 ,  C23C16/24 ,  H01L31/042

CPC分类号： H01L31/03685 ,  C23C16/0272 ,  C23C16/24 ,  H01L31/0236 ,  H01L31/03921 ,  H01L31/068 ,  H01L31/182 ,  Y02E10/546 ,  Y02P70/521

摘要： The invention relates to a structure adapted for the formation of solar cells, comprising the following successive elements, namely: a sheet (1) of textured metal with crystal grains having an average size greater than 50 µm, said sheet being adapted to form a rear face electrode of the cells; a diffusion barrier layer (2) having a thickness of between 0.2 and 2 µm, made from an electrically conductive material with crystal grains having an average size greater than 50 µm; and a doped multicrystalline silicon layer (3) having a thickness of between 30 and 100 µm, with crystal grains having an average size greater than 50 to 100 µm, in which the average diffusion length of the carriers is greater than 50 µm.

公开(公告)号：EP2647054A2

公开(公告)日：2013-10-09

申请号：EP11820839.6

申请日：2011-11-26

申请人： Forschungszentrum Jülich Gmbh

发明人： SMIRNOV, Vladimir ,  LAMBERTZ, Andreas ,  FINGER, Friedhelm

IPC分类号： H01L31/0368 ,  H01L31/0376

CPC分类号： H01L31/03685 ,  H01L31/0376 ,  H01L31/075 ,  H01L31/1824 ,  Y02E10/545 ,  Y02E10/548 ,  Y02P70/521

摘要： The invention relates to a solar cell comprising a first electrical contact layer on a substrate and also a p-i-n structure on the first electrical contact layer, wherein the p-layer is arranged on the first electrical contact layer, and a second electrical contact layer on the n-layer of the p-i-n structure, wherein the i-layer of the p-i-n structure is microcrystalline, characterized by an n-doped layer having a total oxygen content of 10 to 25% and comprising two phases, a microcrystalline Si:H phase and an amorphous SiO
x :H Phase. A method for producing the solar cell and the use of the solar cell are disclosed.

公开(公告)号：EP2230685A3

公开(公告)日：2013-10-02

申请号：EP10162681.0

申请日：2002-03-11

申请人： Canon Kabushiki Kaisha

发明人： Kondo, Takaharu ,  Okabe, Shotaro ,  Sano, Masafumi ,  Sakai, Akira ,  Hayashi, Ryo ,  Suigiyama, Shuichiro

IPC分类号： H01L31/0368 ,  H01L31/075 ,  H01L31/18 ,  H01L29/786 ,  H01L29/04

CPC分类号： H01L29/66765 ,  H01L29/045 ,  H01L29/78618 ,  H01L29/78678 ,  H01L29/78696 ,  H01L31/03685 ,  H01L31/075 ,  H01L31/182 ,  Y02E10/545 ,  Y02E10/546 ,  Y02E10/548 ,  Y02P70/521 ,  Y10T428/261

摘要： The present invention provides a semiconductor element comprising a semiconductor junction composed of silicon-based films, the element being characterized in that at least one of the silicon-based films contains a microcrystal, and microcrystal located in at least one interface region of the silicon-based films containing the microcrystal has no orientation property. Further, the present invention provides a semiconductor element comprising a semiconductor junction composed of silicon-based films, wherein at least one of the silicon-based films contains a microcrystal, and the orientation property of the microcrystal in the silicon-based film containing the microcrystal changes in a film thickness direction of the silicon-based film containing the microcrystal. In order to provide an inexpensive silicon-based film showing excellent performance, the present invention provides a silicon-based film having a shortened tact time, an increased film forming rate, and excellent characteristics, and a semiconductor element including this silicon-based film, and a semiconductor element using this silicon-based film and having excellent adhesion and environmental resistance.

公开(公告)号：EP2246905A3

公开(公告)日：2013-09-11

申请号：EP10161069.9

申请日：2010-04-26

申请人： Sharp Kabushiki Kaisha

发明人： Smith, Katherine Louise ,  Altebaeumer, Thomas Heinz-Helmut ,  Huang, James Ying Jun ,  Dimmock, James Andrew Robert

IPC分类号： H01L31/068 ,  H01L31/0352

CPC分类号： H01L31/03529 ,  H01L31/03685 ,  H01L31/03762 ,  H01L31/0725 ,  H01L31/076 ,  Y02E10/544 ,  Y02E10/545 ,  Y02E10/548

摘要： A multijunction photovoltaic structure includes a first subcell including a p-n or p-i-n junction with elongated structures; and a second subcell, arranged in tandem with the first subcell, and including a planar p-n or p-i-n junction. The elongated structure is a structure that has a height being larger than at least one of its other two dimensions. This ensures a thicker first subcell, which improves the uniformity of the structure and provides a structure that is quicker and easier to fabricate.

公开(公告)号：EP2600408A1

公开(公告)日：2013-06-05

申请号：EP11812144.1

申请日：2011-05-16

申请人： Fuji Electric Co., Ltd.

发明人： MASUDA, Nobuyuki

IPC分类号： H01L31/04

CPC分类号： H01L31/0504 ,  H01L31/022425 ,  H01L31/03685 ,  H01L31/0392 ,  H01L31/03926 ,  H01L31/0465 ,  H01L31/0516 ,  Y02E10/545 ,  Y02E10/548

摘要： A thin-film photovoltaic cell 10, wherein a serially connected structure is formed by plural unit photovoltaic cells, wherein a first electrode layer 1b, a semiconductor layer 1f, and a third electrode layer 1g are formed on a main surface of an insulating substrate 1a, a second electrode layer 1c and a fourth electrode layer 1i are formed on another surface of the substrate 1a, and the third electrode layer 1g is connected to the second electrode layer 1c and fourth electrode layer 1i, by a conductor isolated from the first electrode layer 1b, via second through holes h2 that penetrate the substrate 1a, first electrode layer 1b, second electrode layer 1c, and semiconductor layer 1f, being formed with the substrate 1a in common, adjacent unit photovoltaic cells being electrically isolated by a main surface side processed portion in which the first electrode layer 1b, semiconductor layer 1f, and third electrode layer 1g are removed, and by an other surface side processed portion in which the second electrode layer 1c and fourth electrode layer 1i are removed, and an extension portion of the first electrode layer 1b of one unit photovoltaic cell being connected to an extension portion of the second electrode layer 1c of an adjacent unit photovoltaic cell, by a conductor isolated from the third electrode layer 1g of the unit photovoltaic cell, via one or more first through holes h1 that penetrate the substrate 1a, wherein acceleration and deceleration regions for forming a crooked structure of the other surface side processed portion, or intersection portions of processing lines P3 configuring the crooked structure, are disposed in locally electrically isolated regions in the first electrode layer 1b before the formation of the semiconductor layer 1f.

摘要翻译： 薄膜光伏电池10，其中串联连接的结构由多个单位光伏电池形成，其中第一电极层1b，半导体层1f和第三电极层1g形成在绝缘基板1a的主表面上 在基板1a的另一个表面上形成第二电极层1c和第四电极层1i，并且通过与第一电极隔离的导体将第三电极层1g连接到第二电极层1c和第四电极层1i 层1b通过穿过基板1a的第二通孔h2，共同形成有基板1a的第一电极层1b，第二电极层1c和半导体层1f，相邻的单位光伏电池通过主表面侧电隔离 其中去除第一电极层1b，半导体层1f和第三电极层1g的处理部分，以及另一个表面侧处理部分 h除去第二电极层1c和第四电极层1i，并且一个单位光伏电池的第一电极层1b的延伸部分通过相邻的单位光伏电池的第二电极层1c的延伸部分连接 通过穿过基板1a的一个或多个第一通孔h1与单元光伏电池的第三电极层1g隔离，其中形成另一表面侧加工部的弯曲结构的加速和减速区域或 构成弯曲结构的处理线P3在形成半导体层1f之前设置在第一电极层1b中的局部电隔离区域中。

公开(公告)号：EP2362427A3

公开(公告)日：2013-02-20

申请号：EP11155836.7

申请日：2011-02-24

申请人： Fuji Electric Co., Ltd.

发明人： Shimosawa, Makoto ,  Masuda, Nobuyuki

IPC分类号： H01L31/0224 ,  H01L31/032 ,  H01L31/0368 ,  H01L31/0376 ,  H01L31/0392 ,  H01L31/05 ,  H01L27/142

CPC分类号： H01L31/022425 ,  H01L31/022466 ,  H01L31/0322 ,  H01L31/03685 ,  H01L31/03762 ,  H01L31/0392 ,  H01L31/03926 ,  H01L31/046 ,  H01L31/05 ,  Y02E10/541 ,  Y02E10/545 ,  Y02E10/548

摘要： Disclosed is a thin-film solar cell that has a structure in which a plurality of unit solar cells is connected in series and is capable of preventing the formation position of collector holes from being limited and reducing power loss, as compared to the related art.
A thin-film solar cell 10 includes a plurality of unit solar cells (UCs) formed by linearly removing and dividing each layer (a first electrode layer 12, a photoelectric conversion layer 13, a second electrode layer 14, a third electrode layer 16, and a fourth electrode layer 17) formed on the front surface and the rear surface of an insulating substrate 11. The unit solar cells are connected in series to each other through a plurality of collector holes 19 and connection holes 20. At least one of a first linearly removed portion 21 formed in each layer on the front surface of the insulating substrate 11 and a second linearly removed portion 22 formed in each layer on the rear surface of the insulating substrate includes a bent portion, and the plurality of collector holes 19 is arranged so as to be dispersed in the entire second electrode layer 14 of each unit solar cell (UC).

摘要翻译： 公开了一种薄膜太阳能电池，其具有多个单元太阳能电池串联连接的结构，并且与现有技术相比，能够防止集电孔的形成位置受到限制并且减少功率损失。 薄膜太阳能电池10包括多个单位太阳能电池（UCs），所述多个单位太阳能电池（UCs）通过线性去除和分割各个层（第一电极层12，光电转换层13，第二电极层14，第三电极层16， 和第四电极层17）形成在绝缘基板11的前表面和后表面上。单元太阳能电池通过多个集电孔19和连接孔20彼此串联连接。至少一个 在绝缘基板11的前表面上形成在每层中的第一线性去除部分21和形成在绝缘基板的后表面上的每层中的第二线性去除部分22包括弯曲部分，并且多个集电孔19是 被布置为分散在每个单元太阳能电池（UC）的整个第二电极层14中。

公开(公告)号：EP2375453A3

公开(公告)日：2013-02-13

申请号：EP11161092.9

申请日：2011-04-05

申请人： General Electric Company

发明人： Zhang, Minglong ,  Zhong, Dalong ,  Wu, Zhaoping

IPC分类号： H01L31/0392 ,  H01L31/072 ,  H01L31/0749 ,  H01L31/073

CPC分类号： H01L31/0392 ,  H01L31/0296 ,  H01L31/02966 ,  H01L31/0312 ,  H01L31/0322 ,  H01L31/0324 ,  H01L31/0336 ,  H01L31/03365 ,  H01L31/03685 ,  H01L31/03687 ,  H01L31/03762 ,  H01L31/03765 ,  H01L31/03923 ,  H01L31/03925 ,  H01L31/073 ,  H01L31/0749 ,  Y02E10/541 ,  Y02E10/543 ,  Y02P70/521

摘要： A thin film solar cell (1) comprises: a back contact layer (2); an absorber layer (3) adjacent to the back contact layer and comprising an absorber material and a dopant; a buffer layer (4); a dopant barrier layer (5) between the absorber layer and the buffer layer; and a window layer (6) adjacent to the buffer layer.

摘要翻译： 薄膜太阳能电池（1）包括：背接触层（2）; 与所述背接触层相邻并且包括吸收材料和掺杂剂的吸收层（3） 一个缓冲层（4）; 在吸收层和缓冲层之间的掺杂剂阻挡层（5） 和与缓冲层相邻的窗口层（6）。

公开(公告)号：EP2549544A1

公开(公告)日：2013-01-23

申请号：EP10847959.3

申请日：2010-09-08

申请人： Fuji Electric Co., Ltd.

发明人： OHSE Naoyuki ,  TAKENAKA Kensuke

IPC分类号： H01L31/04

CPC分类号： H01L31/1824 ,  H01L21/02422 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/0262 ,  H01L31/03685 ,  H01L31/03921 ,  H01L31/075 ,  Y02E10/545 ,  Y02E10/548 ,  Y02P70/521

摘要： Provided is a photovoltaic cell with superior cell characteristics, and a method of manufacturing the photovoltaic cell.
A method of manufacturing a photovoltaic cell having at least one or more layers of a photoelectric conversion element in which an i-type silicon layer formed of a microcrystalline silicon film is provided between an n-type silicon layer and a p-type silicon layer, and the n-type silicon layer or p-type silicon layer positioned on a substrate side is configured of an amorphous silicon film, is such that the photovoltaic cell is manufactured by the photoelectric conversion element being formed using a plasma CVD method whereby a mixture of a silane containing gas and hydrogen gas is introduced into a chamber, and a seed layer formed of a microcrystalline silicon film being formed between the n-type silicon layer or p-type silicon layer positioned on the substrate side and the i-type silicon layer, with the crystallization rate of a portion in contact with the n-type silicon layer or p-type silicon layer positioned on the substrate side being lower than that of the i-type silicon layer, and the crystallization rate increasing continuously, or gradually in two or more stages, toward the i-type silicon layer side, continuing to the i-type silicon layer.

摘要翻译： 提供具有优异的电池特性的光伏电池和制造光伏电池的方法。 一种制造光电池的方法，所述光伏电池具有至少一层以上的由微晶硅膜形成的i型硅层的光电转换元件层，所述光电转换元件设置在n型硅层和p型硅层之间， 并且位于基板侧的n型硅层或p型硅层由非晶硅膜构成，使得光电池由使用等离子体CVD法形成的光电转换元件制造，由此将 将含硅烷的气体和氢气引入室中，并且在位于基板侧的n型硅层或p型硅层之间形成由微晶硅膜形成的晶种层，并且i型硅层 与位于基板侧的n型硅层或p型硅层接触的部分的结晶化率低于i型硅层的结晶化率， 并且结晶速率朝向i型硅层侧连续或逐渐增加两个或更多个阶段，继续到i型硅层。

公开(公告)号：EP2453466A1

公开(公告)日：2012-05-16

申请号：EP10796932.1

申请日：2010-02-15

申请人： Mitsubishi Heavy Industries, Ltd.

发明人： TAKEUCHI, Yoshiaki ,  NISHIMIYA, Tatsuyuki ,  MIYAHARA, Hiroomi ,  NAKAO, Sachiko

IPC分类号： H01L21/205 ,  C23C16/455 ,  C23C16/509 ,  H01L31/04 ,  H05H1/46

CPC分类号： C23C16/4401 ,  C23C16/24 ,  C23C16/4412 ,  C23C16/509 ,  H01J37/32082 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32834 ,  H01L31/028 ,  H01L31/03685 ,  H01L31/03762 ,  H01L31/18 ,  H01L31/1804 ,  H01L31/1824 ,  H01L31/1868 ,  H01L31/202 ,  Y02E10/545 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

摘要： To provide a vacuum processing apparatus that is capable of increasing the quality of a deposited film, increasing the area thereof, and increasing deposition speed. A discharge chamber (2) formed of a ridge waveguide having ridge electrodes that are disposed facing each other and that generate plasma therebetween; a gas supplying portion (10) that is disposed adjacent to the discharge chamber (2) and that supplies source gas, which is used to form the plasma, toward the ridge electrodes; a substrate (S) that is disposed at a position such that the gas supplying portion (10) is flanked by the substrate (S) and the discharge chamber (2) and that is subjected to the processing by the plasma; a low-pressure vessel (7) that accommodates thereinside at least the discharge chamber (2), the gas supplying portion (10), and the substrate (S); and an exhaust portion (9) that is communicated at a position in the low-pressure vessel (7) such that this position and the gas supplying portion (10) are disposed on either side of the discharge chamber (2), and that reduces the pressure inside the low-pressure vessel (7) are provided.

摘要翻译： 提供一种能够提高沉积膜质量，增加其面积并提高沉积速度的真空处理装置。 一种放电室（2），其由脊形波导管形成，所述脊形波导管具有彼此面对设置并在其间产生等离子体的脊形电极; 气体供给部（10），其与所述放电室（2）相邻配置，向所述脊形电极供给用于形成所述等离子体的原料气体; 基板（S），其配置在使所述气体供给部（10）位于所述基板（S）和所述放电室（2）的侧面的位置，并被等离子体处理; （2），气体供给部（10）以及基板（S）中的低压容器（7）。 和在低压容器（7）中的位置处连通的排气部（9），使得该位置和气体供应部（10）设置在排气室（2）的任一侧，并且减小 提供低压容器（7）内的压力。