公开(公告)号：EP1674396A1

公开(公告)日：2006-06-28

申请号：EP04773025.4

申请日：2004-09-14

申请人： Nikko Materials Company, Limited

发明人： OKABE, T. Isohara Factory, Nikko Materials Co. Ltd ,  NAGASAWA, M. Isohara Fact. Nikko Materials Co. Ltd

IPC分类号： B65B31/04 ,  C23C14/34

CPC分类号： H01J37/342 ,  B65B31/04 ,  B65D81/2023

摘要： Provided are a packaging device and packaging method of a hollow cathode sputtering target which installs, in the hollow cathode sputtering target, a cover of a size capable of covering a void of the target; provides one or more through-holes to the cover; places a resin bag over them, and performs vacuum suction to the inside of the bag. This packaging device and packaging method of a hollow cathode sputtering target is capable of performing vacuum suction even to the inside of the hollow portion covered with the resin bag.

摘要翻译： 提供一种中空阴极溅射靶的包装装置和封装方法，该空心阴极溅射靶在空心阴极溅射靶中安装能够覆盖靶的空隙的尺寸的盖; 向盖子提供一个或多个通孔; 在其上放置树脂袋，并对袋子的内部进行真空抽吸。 这种包装装置和空心阴极溅射靶的包装方法即使在覆盖有树脂袋的中空部分的内部也能够进行真空吸附。

公开(公告)号：EP1672086A1

公开(公告)日：2006-06-21

申请号：EP04787710.5

申请日：2004-09-08

申请人： Nikko Materials Company, Limited

发明人： SHINDO, Yuichiro, Nikko Materials Co., Ltd. ,  YAMAKOSHI, Yasuhiro, Nikko Materials Co., Ltd.

IPC分类号： C22C19/03 ,  C23C14/34

CPC分类号： C23C14/3414 ,  C22C19/03

摘要： Provided are a high purity Ni-V alloy, high purity Ni-V alloy target and high purity Ni-V alloy thin film wherein the purity of the Ni-V alloy excluding Ni, V and gas components is 99.9wt% or higher, and the V content variation among ingots, targets or thin films is within 0.4%. With these high purity Ni-V alloy, high purity Ni-V alloy target and high purity Ni-V alloy thin film having a purity of 99.9wt% or higher, the variation among ingots, targets or thin films is small, the etching property is improved, and isotopic elements such as U and Th that emit alpha particles having an adverse effect on microcircuits in a semiconductor device are reduced rigorously. And further provided is a manufacturing method of such high purity Ni-V alloy capable of effectively reducing the foregoing impurities.

摘要翻译： 本发明提供一种高纯度的Ni-V合金，高纯度的Ni-V合金靶和高纯度的Ni-V合金薄膜worin不含镍，钒和气体成分以外的镍-V合金的纯度为99.9重量％或更高，和 锭，靶或薄膜之间的V含量的变化为0.4％以内。 与合成高纯度的Ni-V合金，高纯度的Ni-V合金靶和具有99.9重量％以上纯度的高纯度的Ni-V合金薄膜，锭，靶或薄膜之间的偏差小，则蚀刻性 提高，并且同位素元素：如U和Th发射α粒子也具有不利的影响上的半导体器件中微电路都是经过严格的减少。 并且进一步提供的是寻求高纯度能够有效地减少上述杂质的Ni-V合金的制造方法。

公开(公告)号：EP1609881A1

公开(公告)日：2005-12-28

申请号：EP04712763.4

申请日：2004-02-19

申请人： Nikko Materials Company, Limited

发明人： ODA, Kunihiro,c/o Isohara Factory of ,  FUKUSHIMA, Atsushi, c/o Isohara Factory of

IPC分类号： C23C14/34 ,  C22F1/18

CPC分类号： C23C14/3414

摘要： Provided is a tantalum sputtering target manufactured by working a molten and cast tantalum ingot or billet through forging, annealing and rolling, wherein the structure of the tantalum target comprises a non-recrystallized structure. The tantalum sputtering target having a high deposition speed and excellent uniformity of film, producing less arcings and particles and having excellent film forming properties, and the method capable of stably manufacturing the target can be provided by improving and devising plastic working steps such as forging and rolling, and the heat treatment step.

摘要翻译： 提供了通过锻造，退火和轧制加工熔融和铸造的钽锭或坯料制造的钽溅射靶，其中钽靶的结构包括未再结晶的结构。 具有高沉积速度和优异均匀性的薄膜的钽溅射靶，具有较少的电弧和颗粒并且具有优异的成膜性能，以及能够稳定地制造靶材的方法可以通过改进和设计塑料加工步骤来提供，例如锻造和 轧制和热处理步骤。

公开(公告)号：EP1569269A1

公开(公告)日：2005-08-31

申请号：EP03723368.1

申请日：2003-05-14

申请人： Nikko Materials Company, Limited

发明人： NAKAMURA, Masashi, c/o Nikko Materials CO. LTD. ,  KURITA, Hideki, c/o Nikko Materials CO. LTD.

IPC分类号： H01L21/31

CPC分类号： C30B25/02 ,  C30B25/183 ,  C30B29/40 ,  H01L21/02392 ,  H01L21/02433 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02502 ,  H01L21/02543 ,  H01L21/302

摘要： An epitaxial growth method includes: supporting a substrate for growth (for example, an InP substrate) with a substrate supporter, growing a compound semiconductor layer comprising 3 or 4 elements (for example, a III-V group compound semiconductor such as an InGaAs layer, AlGaAs layer, AlInAs layer and AlInGaAs layer) on the substrate for growth by metal organic chemical vapor deposition, polishing the substrate so that an angle of gradient is 0.00° to 0.03° or 0.04° to 0.24° with respect to (100) direction in the entire effective area of the substrate, and forming the compound semiconductor layer to be 0.5µm thick or more on the substrate by using the substrate for growth.

摘要翻译： 外延生长方法包括：用衬底支撑体支撑用于生长的衬底（例如，InP衬底），生长包括3或4个元件的化合物半导体层（例如，诸如InGaAs层的III-V族化合物半导体 ，AlGaAs层，AlInAs层和AlInGaAs层）在基板上通过金属有机化学气相沉积生长，对基板进行抛光，使得倾斜角相对于（100）方向为0.00°至0.03°或0.04°至0.24° 在衬底的整个有效区域中，并且通过使用生长用衬底，在衬底上形成0.5μm以上的化合物半导体层。

公开(公告)号：EP1568802A1

公开(公告)日：2005-08-31

申请号：EP03788699.1

申请日：2003-08-20

申请人： Nikko Materials Company, Limited

发明人： KUMAGAI, Masashi, c/o Nikko Materials Co., Ltd. ,  HANAFUSA, Mikio, c/o Nikko Materials Co., Ltd.

IPC分类号： C25D1/04 ,  C25D3/38

CPC分类号： C25D3/38 ,  H05K1/09 ,  Y10T428/31678 ,  Y10T428/31681

摘要： It is an object of the present invention to obtain a low-profile electrolytic copper foil with a small surface roughness on the side of the rough surface (the opposite side from the lustrous surface) in the manufacture of an electrolytic copper foil using a cathode drum, and more particularly to obtain an electrolytic copper foil which allows fine patterning, and which is superior in terms of elongation and tensile strength at ordinary temperatures and high temperatures. Furthermore, it is an object of the present invention to obtain a copper electrolytic solution for this purpose. This copper electrolytic solution contains as additives an organo-sulfur compound and a quaternary amine compound with a specific skeleton expressed by the following general formula (1) which is obtained by an addition reaction between a compound which has one or more epoxy groups per molecule and an amine compound, followed by a quaternization of the nitrogen.
(In general formula (1), R 1 and R 2 each indicate a group selected from the group consisting of a hydroxyalkyl group, an ether group, an aromatic group, an aromatic-substituted alkyl group, an unsaturated hydrocarbon group and an alkyl group, R 3 indicates a benzyl group, an allyl group or an alkyl group, A indicates an epoxy compound residue, X 1 - indicates Cl - , Br - or CH 3 SO 4 - , and n indicates an integer of 1 or greater.)

摘要翻译： 它是使用阴极鼓上的本发明的一个目的是获得具有在电解铜箔的制造中对粗糙表面的一侧上的表面粗糙度小（从表面光泽的相反侧）的低轮廓电解铜箔 ，并且更具体地，得到其允许精细图案化电解铜箔的，并且所有这是在常温下和高温下的伸长率和拉伸强度方面是优异的。 进一步，这是本发明的一个目的是获得用于此目的的铜电解液。 这种铜电解液包含作为添加剂，以有机硫化合物和由下述通式（1）所有其通过加成反应具有一个或每分子以上环氧基的化合物和之间获得表达特定骨架的季胺化合物 到胺化合物，通过氮的季铵化随后。 （在通式（1）中，R1和R2各自表示选自羟烷基，醚基的烷基，以芳族基团中选择的基团，芳香族substituiertem烷基，上不饱和的烃基和在 基，R 3表示苄基，以烯丙基或烷基，A表示与环氧化合物的残基，X1 < - >表示氯< - >，溴< - >或CH 3 SO 4 < - >，并且n表示为1整数 或更大。）

公开(公告)号：EP1480260A1

公开(公告)日：2004-11-24

申请号：EP02775533.9

申请日：2002-11-12

申请人： Nikko Materials Company, Limited

发明人： SASAKI, Shinichi, c/o NIKKO MATERIALS CO., LTD ,  NAKAMURA, Masashi, c/o NIKKO MATERIALS CO., LTD ,  SATO, Kenji, c/o NIKKO MATERIALS CO., LTD

IPC分类号： H01L21/20 ,  H01L21/205 ,  C23C16/34 ,  C30B29/38

CPC分类号： C30B29/406 ,  C30B25/02 ,  C30B25/18 ,  C30B29/403 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02658 ,  Y10S148/113

摘要： A method of growing a crystal (for example, a GaN system compound semiconductor crystal) on a substrate at least includes forming a first crystalline layer (a GaN system buffer layer), forming a second crystalline layer (a GaN system intermediate layer) and forming a third crystalline layer (a GaN system thick film layer). The three crystalline layers are respectively reared on conditions different from one another.

摘要翻译： 在衬底上生长晶体（例如，GaN系化合物半导体晶体）的方法至少包括形成第一晶体层（GaN系缓冲层），形成第二晶体层（GaN系中间层）和形成 第三晶体层（GaN系厚膜层）。 三个结晶层分别在彼此不同的条件下饲养。

公开(公告)号：EP1462545A1

公开(公告)日：2004-09-29

申请号：EP02751622.8

申请日：2002-07-17

申请人： Nikko Materials Company, Limited

发明人： TSUCHIDA, K., Isohara Pt, NIKKO MAT. CO., LTD ,  KUMAGAI, M., Isohara Pt, NIKKO MAT. CO., LTD ,  AKASE, F., GNF Plant, NIKKO MATERIALS CO., LTD.

IPC分类号： C23C22/68

CPC分类号： H05K3/389 ,  C09D4/00 ,  C23C22/52 ,  C23C22/68 ,  C23C2222/20 ,  H05K2201/0355 ,  Y10T428/31663 ,  C08G77/04

摘要： The present invention provides a surface treatment agent that endows a copper foil with excellent adhesion to insulating resins.
The surface treatment agent of the present invention has as its active components an organosilicic compound expressed by a following General Formula (1) and/or an organosilicic compound expressed by a General Formula (2) and an olefin-based silane coupling agent.
The surface treatment agent of the present invention provides particularly excellent adhesion between an insulating resin and a low-profile copper foil used for a high-frequency-adaptable substrate.


In Formulas (1) and (2), R 1 is a hydroxyl group or a C 1 to C 5 alkyl group, and R 2 is a C 1 to C 10 alkylene group that may contain oxygen.

摘要翻译： 本发明提供了赋予铜箔对绝缘树脂优异粘合性的表面处理剂。 本发明的表面处理剂作为其活性成分，由以下通式（1）表示的有机硅化合物和/或通式（2）表示的有机硅化合物和烯烃系硅烷偶联剂 剂。 本发明的表面处理剂提供了绝缘树脂和用于高频适应性基材的低剖面铜箔之间特别优异的粘合性。 在式（1）和（2）中，R 1是羟基或C 1至C 5烷基，R 2是可以是C 1 -C 10亚烷基的C 1 -C 10亚烷基 含氧。

公开(公告)号：EP1452535A1

公开(公告)日：2004-09-01

申请号：EP02765355.9

申请日：2002-08-27

申请人： Nikko Materials Company, Limited

发明人： KUMAGAI, Masashi, c/o NIKKO MATERIALS CO. LTD. ,  OUCHI, Takashi, c/o NIKKO MATERIALS CO. LTD. ,  TSUCHIDA, Katsuyuki, c/o NIKKO MATERIALS CO. LTD.

IPC分类号： C07F7/18 ,  C08G59/40 ,  C08L63/00

CPC分类号： C08G59/4238 ,  C07F7/1836

摘要： There are provided a composition for functioning as an effective additive for epoxy resin that is solid at room temperature and has high storage stability, and a producing method thereof. The composition of the present invention is a basic silane coupling agent organic carboxylate composition obtained by first synthesizing an organic carboxylate of a basic silane coupling agent by reacting a basic silane coupling agent and an organic carboxylic acid, and subsequently heating and mixing the organic carboxylate of the basic silane coupling agent with a compound exhibiting good affinity for the basic silane coupling agent or organic carboxylic acid and having a softening point or melting point of 40°C or greater.

摘要翻译： 提供了用于作为有效添加剂环氧树脂作用的组合物所做的是在室温下是固体并且具有高的储存稳定性，以及它们的制造方法。 本发明的组合物是一个基本的硅烷偶联剂的有机羧酸酯通过碱性硅烷偶联剂的有机羧酸盐的第一合成而得到通过使碱性硅烷偶联剂和有机羧酸的组合物，并随后加热和混合的有机羧酸盐 基本硅烷偶联剂与化合物参展的基本硅烷偶合剂或有机羧酸的亲和性良好，并且具有软化点或在40℃或更高的熔点。

公开(公告)号：EP1413651A1

公开(公告)日：2004-04-28

申请号：EP01978844.7

申请日：2001-10-22

申请人： Nikko Materials Company, Limited

发明人： SHINDO, Y. Isohara Factory Nikko Materials Co. Ltd ,  TAKEMOTO, K., Isohara Factory Nikko Mat. Co. Ltd.

IPC分类号： C25C1/08

CPC分类号： C22C19/00 ,  C23C14/3414 ,  C25C1/08 ,  Y10T428/12

摘要： Upon performing electrolysis with a solution containing nickel as the electrolytic solution, anolyte is adjusted to pH 2 to 5; impurities such as iron, cobalt and copper contained in the anolyte are eliminated by combining any one or two or more of the methods among adding an oxidizing agent and precipitating and eliminating the impurities as hydroxide, eliminating the impurities through preliminary electrolysis, or adding Ni foil and eliminating the impurities through displacement reaction; impurities are thereafter further eliminated with a filter; and the impurity-free solution is employed as catholyte to perform the electrolysis. The present invention relates to a simple method of performing electrolytic refining employing a solution containing nickel from nickel raw material containing a substantial amount of impurities, and provides technology on efficiently manufacturing high purity nickel having a purity of 5N (99.999wt%) or more.

公开(公告)号：EP1405932A1

公开(公告)日：2004-04-07

申请号：EP02733312.9

申请日：2002-06-05

申请人： Nikko Materials Company, Limited

发明人： IRUMATA, Shuichi, Nikko Materials Company, Ltd. ,  SUZUKI, Ryo, Nikko Materials Company, Ltd.

IPC分类号： C23C14/34 ,  H01L21/316

CPC分类号： C23C14/3414 ,  C01B35/04 ,  C04B35/58092 ,  C04B35/6268 ,  C04B35/645 ,  C04B2235/3891 ,  C04B2235/5427 ,  C04B2235/72 ,  C04B2235/721 ,  C04B2235/723 ,  C04B2235/77 ,  C04B2235/786 ,  C04B2235/80 ,  C22C27/00 ,  C23C14/0676 ,  C23C14/08 ,  H01L21/3145 ,  H01L21/31604

摘要： The present invention relates to a hafnium silicide target for forming a gate oxide film composed of HfSi 0.05-0.37 . Obtained is a hafnium silicide target superior in workability and embrittlement resistance, and suitable for forming a HfSiO film and HfSiON film that may be used as a high dielectric gate insulation film in substitute for a SiO 2 film, and the manufacturing method thereof.