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    Photo-sensitive compound and photoresist composition including the same
    3.
    发明公开
    Photo-sensitive compound and photoresist composition including the same 审中-公开
    光敏化合物和光刻胶组合物，因此

    公开(公告)号：EP2000853A3

    公开(公告)日：2009-06-03

    申请号：EP08010368.2

    申请日：2008-06-06

    申请人： DONGJIN SEMICHEM CO., LTD

    发明人： Lee, Jae-Woo ,  Lee, Jung-Youl ,  Kim, Jeong-Sik ,  Jang, Eu-Jean ,  Kim, Jae-Hyun

    IPC分类号： G03F7/038

    CPC分类号： C07C69/42 ,  C07C69/76 ,  G03F7/0382

    摘要： Disclosed are a photo-sensitive compound and a photoresist composition containing the same, for forming ultra-fine photoresist patterns. The photo-sensitive compound is resented by following Formula 1,

    wherein x is an integer of 1 to 5, y is an integer of 2 to 6, R is a C 2 ~C 20 hydrocarbon group. The photoresist composition comprises 1~85 weight% of a photo-sensitive compound represented by following Formula 1; 1~55 weight% of a compound which reacts with a hydroxyl group (-OH) of the compound represented by Formula 1 to combine with the photo-sensitive compound represented by Formula 1; 1~15 weight% of a photo-acid generator; and 12~97 weight% of an organic solvent.

    Acid-amplifier having acetal group and photoresist composition including the same
    4.
    发明公开
    Acid-amplifier having acetal group and photoresist composition including the same 有权
    äure ker ker pe pe pe n n n n n n n n n n n n n n n n n n n n n n

    公开(公告)号：EP2017274A1

    公开(公告)日：2009-01-21

    申请号：EP08012774.9

    申请日：2008-07-15

    申请人： DONGJIN SEMICHEM CO., LTD

    发明人： Lee, Jung-Youl ,  Yoo, Min-Ja ,  Kim, Jeong-Sik ,  Lim, Young-Bae ,  Lee, Jae-Woo ,  Kim, Jae-Hyun

    IPC分类号： C07D317/72 ,  C07D327/00 ,  C07D493/10 ,  C07D495/10 ,  C11B9/00 ,  G03F7/004 ,  G03F7/039

    CPC分类号： C07D317/72 ,  C07D339/06 ,  G03F7/0045 ,  G03F7/0397 ,  Y10S430/123

    摘要： An acid-amplifier having an acetal group and a photoresist composition including the same, are disclosed. The acid-amplifier produces an acid (second acid) during a post-exposure-bake (PEB), which is induced by an acid (first acid) generated from a photo-acid generator (PAG) at the exposure process so that a line edge roughness (LER) of the photoresist pattern and photoresist energy sensitivity are improved. The acid-amplifier has a structure of following Formula 1.

    in Formula 1, R is C 4 ~C 20 mono-cyclic or multi-cyclic saturated hydrocarbon, R 1 is C 1 ∼C 10 linear hydrocarbon, C 1 ~C 10 perfluoro compound or C 5~ C 20 aromatic compound, R a and R b are independently hydrogen atom or C 1 ~C 4 saturated hydrocarbon and A is independently oxygen atom (O) or sulfur atom (S).

    摘要翻译： 公开了具有缩醛基的酸性放大器和包含该缩醛基的光致抗蚀剂组合物。 在曝光过程中，酸放大器在曝光后烘烤（PEB）中产生酸（第二酸），其由由光酸产生剂（PAG）产生的酸（第一酸）诱导，使得线 改善了光致抗蚀剂图案的边缘粗糙度（LER）和光致抗蚀剂的能量灵敏度。 酸式放大器在式1中具有下式1的结构，R为C 4〜C 20单环或多环饱和烃，R 1为C 1〜C 10直链烃，C 1〜C 10全氟化合物 或C 5〜C 20芳族化合物，R a和R b独立地为氢原子或C 1〜C 4饱和烃，A独立地为氧原子（O）或硫原子（S）。

    Method for forming fine pattern in semiconductor device
    5.
    发明公开
    Method for forming fine pattern in semiconductor device 审中-公开
    在Halbleiterbauelementen的Verfahren zur Herstellung feinerOberflächenstrukturen

    公开(公告)号：EP2230552A2

    公开(公告)日：2010-09-22

    申请号：EP09013760.5

    申请日：2009-11-02

    申请人： DONGJIN SEMICHEM CO., LTD

    发明人： Lee, Jun-Gyeong ,  Lee, Jung-Youl ,  Kim, Jeong-Sik ,  Jang, Eu-Jean ,  Lee, Jae-Woo ,  Kim, Deog-Bae ,  Kim, Jae-Hyun

    IPC分类号： G03F7/00

    CPC分类号： G03F7/40 ,  G03F7/0035 ,  G03F7/0752 ,  G03F7/70466 ,  H01L21/0273

    摘要： Is disclosed a method for manufacturing fine patterns of semiconductor devices using a double exposure patterning process for manufacturing the second photoresist patterns by simply exposing without an exposure mask. The method comprises the steps of: forming a first photoresist pattern on a semiconductor substrate on which a layer to be etched is formed; coating a composition for a mirror interlayer on the first photoresist pattern to form a mirror interlayer; forming a photoresist layer on the resultant; and forming a second photoresist pattern which is made by a scattered reflection of the mirror-interlayer and positioned between the first photoresist patterns, by exposing the photoresist layer to a light having energy which is lower than a threshold energy (E th ) of the photoresist layer without an exposure mask, and then developing the same.

    摘要翻译： 公开了一种使用双曝光图案化工艺来制造精细图案的半导体器件的方法，用于通过在没有曝光掩模的情况下简单地曝光来制造第二光致抗蚀剂图 该方法包括以下步骤：在其上形成有被蚀刻层的半导体衬底上形成第一光致抗蚀剂图案; 在第一光致抗蚀剂图案上涂覆用于镜面中间层的组合物以形成镜面中间层; 在所得物上形成光致抗蚀剂层; 以及通过将所述光致抗蚀剂层暴露于能量低于所述光致抗蚀剂的阈值能量（E th）的光，形成通过所述镜面 - 中间层的散射反射并且位于所述第一光致抗蚀剂图案之间的第二光致抗蚀剂图案， 层没有曝光掩模，然后开发相同。

    Photoresist monomer, polymer thereof and photoresist composition including the same
    6.
    发明公开
    Photoresist monomer, polymer thereof and photoresist composition including the same 有权
    光致抗体单体，dessen聚合物和硬脂酸酯Fotolackzusammensetzung

    公开(公告)号：EP1736828A1

    公开(公告)日：2006-12-27

    申请号：EP06012870.9

    申请日：2006-06-22

    申请人： DONGJIN SEMICHEM CO., LTD

    发明人： Lee, Jung-Youl ,  Lee, Jae-Woo ,  Kim, Jae-Hyun

    IPC分类号： G03F7/039 ,  C07C69/54 ,  C08F220/20

    CPC分类号： G03F7/0397 ,  C07C69/54 ,  C07C2601/08 ,  C07C2601/14 ,  C07C2602/42 ,  C07C2602/44 ,  C07C2603/74 ,  C08F220/18 ,  G03F7/0395 ,  Y10S430/106 ,  Y10S430/111 ,  Y10S430/115 ,  Y10S430/122 ,  Y10S430/126

    摘要： A polymer including a monomer represented by the following Formula and a photoresist composition including the same are disclosed. The polymer and photoresist composition can improve the resolution and the process margin due to the low activation energy of the deprotection reaction of the alcohol ester group including saturated cyclic hydrocarbyl group, and also can produce fine photoresist patterns because they have a stable PEB(Post Exposure Baking) temperature sensitivity, and further, can improve the focus depth margin and the line edge roughness of the resist layer.

    In the above Formula, R* is a hydrogen or methyl group, R 1 is saturated hydrocarbyl group of 1 to 5 carbon atoms, R is mono-cyclic or multi-cyclic homo or hetero saturated hydrocarbyl group of 3 to 50 carbon atoms, and n is an integer of at least 2.

    摘要翻译： 公开了包含由下式表示的单体的聚合物和包含其的光致抗蚀剂组合物。 聚合物和光致抗蚀剂组合物由于具有饱和环状烃基的醇酯基的脱保护反应的活化能低而能够提高分离度和工艺限度，并且由于它们具有稳定的PEB（后曝光） 烘烤）温度敏感性，并且还可以提高抗蚀剂层的聚焦深度和线边缘粗糙度。 在上式中，R *为氢或甲基，R 1为1〜5个碳原子的饱和烃基，R为3〜50个碳原子的单环或多环均基或杂饱和烃基， n为至少2的整数。

    Method for forming fine pattern in semiconductor device
    9.
    发明公开
    Method for forming fine pattern in semiconductor device 审中-公开
    一种用于在半导体器件制备精细表面结构处理

    公开(公告)号：EP2230552A3

    公开(公告)日：2011-11-02

    申请号：EP09013760.5

    申请日：2009-11-02

    申请人： DONGJIN SEMICHEM CO., LTD

    发明人： Lee, Jun-Gyeong ,  Lee, Jung-Youl ,  Kim, Jeong-Sik ,  Jang, Eu-Jean ,  Lee, Jae-Woo ,  Kim, Deog-Bae ,  Kim, Jae-Hyun

    IPC分类号： G03F7/00 ,  G03F7/40

    CPC分类号： G03F7/40 ,  G03F7/0035 ,  G03F7/0752 ,  G03F7/70466 ,  H01L21/0273

    摘要： Is disclosed a method for manufacturing fine patterns of semiconductor devices using a double exposure patterning process for manufacturing the second photoresist patterns by simply exposing without an exposure mask. The method comprises the steps of: forming a first photoresist pattern on a semiconductor substrate on which a layer to be etched is formed; coating a composition for a mirror interlayer on the first photoresist pattern to form a mirror interlayer; forming a photoresist layer on the resultant; and forming a second photoresist pattern which is made by a scattered reflection of the mirror-interlayer and positioned between the first photoresist patterns, by exposing the photoresist layer to a light having energy which is lower than a threshold energy (E th ) of the photoresist layer without an exposure mask, and then developing the same.