-
1.发明公开Charged particle beam processing using a cluster source 有权由群集源装置Ladungsträgerteilchenstrahlbearbeitung
公开(公告)号：EP1918963A3
公开(公告)日：2009-10-21
申请号：EP07119687.7
申请日：2007-10-31
Applicant: FEI COMPANY
Inventor： Chandler, Clive , Smith, Noel
IPC: H01J37/08 , H01J37/305
CPC classification number: H01L21/306 , H01J37/3056 , H01J37/3178 , H01J2237/006 , H01J2237/0812 , H01J2237/0815 , H01J2237/3142 , H01J2237/31732 , H01J2237/3174 , H01J2237/31742 , H01J2237/31744 , H01L21/67069
Abstract: A cluster source producing a beam of charged clusters 108 is used to assist charged particle beam processing on a work piece 112. For example, a protective layer is applied using a cluster source and a precursor gas, the gas being supplied by a gas injection system 104. The large mass of the cluster and the low energy per atom or molecule in the cluster restricts damage to within a few nanometers of the surface of the work piece. Fullerenes or clusters of fullerenes, bismuth, gold or Xe can be used with a precursor gas to deposit material onto a surface, or can be used with an etchant gas to etch the surface. Clusters can also be used to deposit material directly onto the surface to form a protective layer for charged particle beam processing or to provide energy to activate an etchant gas. An additional charged particle beam 107 can assist in machining the work piece when e.g. a protective layer is applied.
-
公开(公告)号：EP2341525A3
公开(公告)日：2012-03-07
申请号：EP10196692.7
申请日：2010-12-23
Applicant: FEI Company
Inventor： Kellog, Sean , Miller, Tom , Zhang, Shouyin , Graupera, Anthony , McGinn, James , Dirriwachter, Tom , Smith, Noel
CPC classification number: H01J37/08 , H01J27/16 , H01J2237/002 , H01J2237/006 , H01J2237/026 , H01J2237/038 , H01J2237/0815 , H01J2237/31749
Abstract: An inductively coupled plasma source (100) for a focused charged particle beam system includes a dielectric liquid (126) that insulates and cools the plasma chamber (102). A flow restrictor (158) at an electrical potential that is a large fraction of the plasma potential reducing arcing because the voltage drop in the gas occurs primarily at relative high pressure.
-
3.发明公开System for attachment of an electrode into an inductively coupled plasma source 有权系统zur Befestigung einer Elektrode einer induktiv gekoppelten Plasmaquelle
公开(公告)号：EP2600381A3
公开(公告)日：2015-01-07
申请号：EP12194645.3
申请日：2012-11-28
Applicant: FEI COMPANY
Inventor： Kellogg, Sean , Graupera, Anthony , Parker, N. William , Wells, Andrew , Utlaut, Mark , Skoczylas, Walter , Schwind, Gregory , Zhang, Shouyin , Smith, Noel
CPC classification number: H01J37/32605 , H01J9/02 , H01J27/16 , H01J37/04 , H01J37/08 , H01J2237/032
Abstract: An inductively coupled plasma charged particle source (100, 200, 300, 400, 500, 600) for focused ion beam systems includes a plasma reaction chamber (102, 202, 302, 402, 502, 602) with a removably attached source electrode (106, 206, 306, 406, 506, 606). A fastening mechanism (104, 204, 304, 404, 504) connects the source electrode with the plasma reaction chamber and allows for a heat-conductive, vacuum seal to form. With a removable source electrode, improved serviceability and reuse of the plasma source tube are now possible.
Abstract translation: 用于聚焦离子束系统的电感耦合等离子体带电粒子源（100,200,300,400,500,600）包括具有可移除地附接的源电极（102,202,302,402,502,602）的等离子体反应室 106,206,306,406,506,606）。 紧固机构（104,204,304,404,504）将源电极与等离子体反应室连接，并且允许形成导热的真空密封。 使用可移除的源电极，现在可以提高等离子体源管的可维护性和再利用性。
-
4.发明授权System for attachment of an electrode into an inductively coupled plasma source 有权系统的电极固定到一个感应耦合等离子体源
公开(公告)号：EP2600381B1
公开(公告)日：2016-03-23
申请号：EP12194645.3
申请日：2012-11-28
Applicant: FEI COMPANY
Inventor： Kellogg, Sean , Graupera, Anthony , Parker, N. William , Wells, Andrew , Utlaut, Mark , Skoczylas, Walter , Schwind, Gregory , Zhang, Shouyin , Smith, Noel
CPC classification number: H01J37/32605 , H01J9/02 , H01J27/16 , H01J37/04 , H01J37/08 , H01J2237/032
-
公开(公告)号：EP1918963B1
公开(公告)日：2014-04-23
申请号：EP07119687.7
申请日：2007-10-31
Applicant: FEI COMPANY
Inventor： Chandler, Clive , Smith, Noel
IPC: H01J37/08 , H01J37/305 , H01J37/317
CPC classification number: H01L21/306 , H01J37/3056 , H01J37/3178 , H01J2237/006 , H01J2237/0812 , H01J2237/0815 , H01J2237/3142 , H01J2237/31732 , H01J2237/3174 , H01J2237/31742 , H01J2237/31744 , H01L21/67069
-
Patent Agency Ranking
公开(公告)号：EP2341525A2
公开(公告)日：2011-07-06
申请号：EP10196692.7
申请日：2010-12-23
Applicant: FEI Company
Inventor： Kellog, Sean , Miller, Tom , Zhang, Shouyin , Graupera, Anthony , McGinn, James , Dirriwachter, Tom , Smith, Noel
CPC classification number: H01J37/08 , H01J27/16 , H01J2237/002 , H01J2237/006 , H01J2237/026 , H01J2237/038 , H01J2237/0815 , H01J2237/31749
Abstract: An inductively coupled plasma source (100) for a focused charged particle beam system includes a dielectric liquid (126) that insulates and cools the plasma chamber (102). A flow restrictor (158) at an electrical potential that is a large fraction of the plasma potential reducing arcing because the voltage drop in the gas occurs primarily at relative high pressure.
Abstract translation: 用于聚焦带电粒子束系统的电感耦合等离子体源（100）包括绝缘和冷却等离子体室（102）的电介质液体（126）。 由于气体中的电压降主要发生在相对较高的压力下，电流下的流量限制器（158）是等离子体电位的大部分减少电弧。
-
公开(公告)号：EP2006249A3
公开(公告)日：2010-06-16
申请号：EP08158646.3
申请日：2008-06-20
Applicant: FEI COMPANY
Inventor： Toth, Milos , Smith, Noel
IPC: B81C1/00
CPC classification number: B05C21/005 , B81C1/00531 , B81C2201/0132 , B81C2201/0143 , H01J37/3053 , H01J37/317 , H01J2237/3174 , H01J2237/31744 , H01J2237/31749
Abstract: A method for fabrication of microscopic structures that uses a beam process, such as beam-induced decomposition of a precursor, to deposit a mask in a precise pattern and then a selective, plasma beam is applied, comprising the steps of first creating a protective mask upon surface portions of a substrate using a beam process such as an electron beam, focused ion beam (FIB), or laser process, and secondly etching unmasked substrate portions using a selective plasma beam etch process. Optionally, a third step comprising the removal of the protective mask may be performed with a second, materially oppositely selective plasma beam process.
-
公开(公告)号：EP2341525B1
公开(公告)日：2013-10-23
申请号：EP10196692.7
申请日：2010-12-23
Applicant: FEI Company
Inventor： Kellog, Sean , Miller, Tom , Zhang, Shouyin , Graupera, Anthony , McGinn, James , Dirriwachter, Tom , Smith, Noel
CPC classification number: H01J37/08 , H01J27/16 , H01J2237/002 , H01J2237/006 , H01J2237/026 , H01J2237/038 , H01J2237/0815 , H01J2237/31749
-
9.发明公开System for attachment of an electrode into an inductively coupled plasma source 有权系统的电极固定到一个感应耦合等离子体源
公开(公告)号：EP2600381A2
公开(公告)日：2013-06-05
申请号：EP12194645.3
申请日：2012-11-28
Applicant: FEI COMPANY
Inventor： Kellogg, Sean , Graupera, Anthony , Parker, N. William , Wells, Andrew , Utlaut, Mark , Skoczylas, Walter , Schwind, Gregory , Zhang, Shouyin , Smith, Noel
CPC classification number: H01J37/32605 , H01J9/02 , H01J27/16 , H01J37/04 , H01J37/08 , H01J2237/032
Abstract: An inductively coupled plasma charged particle source (100, 200, 300, 400, 500, 600) for focused ion beam systems includes a plasma reaction chamber (102, 202, 302, 402, 502, 602) with a removably attached source electrode (106, 206, 306, 406, 506, 606). A fastening mechanism (104, 204, 304, 404, 504) connects the source electrode with the plasma reaction chamber and allows for a heat-conductive, vacuum seal to form. With a removable source electrode, improved serviceability and reuse of the plasma source tube are now possible.
-
公开(公告)号：EP2006249A2
公开(公告)日：2008-12-24
申请号：EP08158646.3
申请日：2008-06-20
Applicant: FEI COMPANY
Inventor： Toth, Milos , Smith, Noel
IPC: B81C1/00
CPC classification number: B05C21/005 , B81C1/00531 , B81C2201/0132 , B81C2201/0143 , H01J37/3053 , H01J37/317 , H01J2237/3174 , H01J2237/31744 , H01J2237/31749
Abstract: A method for fabrication of microscopic structures that uses a beam process, such as beam-induced decomposition of a precursor, to deposit a mask in a precise pattern and then a selective, plasma beam is applied, comprising the steps of first creating a protective mask upon surface portions of a substrate using a beam process such as an electron beam, focused ion beam (FIB), or laser process, and secondly etching unmasked substrate portions using a selective plasma beam etch process. Optionally, a third step comprising the removal of the protective mask may be performed with a second, materially oppositely selective plasma beam process.
Abstract translation: 应用一种制造微结构的方法，该方法使用光束过程，例如光束诱导的前体分解，以精确图案沉积掩模，然后选择性等离子束，包括以下步骤：首先产生保护掩模 使用诸如电子束，聚焦离子束（FIB）或激光工艺的光束过程在衬底的表面部分上，并且使用选择性等离子体束蚀刻工艺二次蚀刻未掩模的衬底部分。 可选地，包括去除保护掩模的第三步骤可以用第二种，实质上相对选择的等离子体束工艺进行。
-
-
-
-
-
-
-
-
-
Search Results
11
records
(took 0.022 seconds)
