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公开(公告)号：EP0867036B1
公开(公告)日：2001-07-18
申请号：EP96939061.6
申请日：1996-11-15
发明人： GOEDICKE, Klaus , FIETZKE, Fred , RESCHKE, Jonathan , HEMPEL, Wolfgang , SCHEFFEL, Bert , METZNER, Christoph , SCHILLER, Siegfried
CPC分类号： H01J37/32018 , C23C14/022 , H01J37/34 , H01J2237/3322
摘要： Known methods and devices for pre-treatment of electrically conducting and non-conducting substrates require a relatively high level of technical outlay and are difficult to incorporate into the following coating process. Pre-treatment frequently does not ensure the adhesion required for coating. The invention proposes to maintain a low pressure glow discharge between the substrate to be cleaned and a counter-electrode. The substrate is periodically alternately switched as a cathode or anode, the frequency of the alternation being set in the range of from 1 Hz to 1000 Hz and the pulse lengths and/or the discharge voltage being independently adjustable. The method is used as a preliminary process for the coating of substrates which require an adhesive layer. Cutting tools, in particular, made of steel, hard metal or ceramic are treated before being coated.
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公开(公告)号：EP0725843B1
公开(公告)日：1998-03-04
申请号：EP94929464.9
申请日：1994-10-11
发明人： GOEDICKE, Klaus , SCHEFFEL, Bert , RESCHKE, Jonathan , SCHILLER, Siegfried , KIRCHHOFF, Volker , WERNER, Torsten
CPC分类号： C23C14/562 , C23C14/24 , C23C14/30 , H01J37/3053
摘要： A process and system for plasma-activated electron-beam vaporisation are disclosed. Known processes are not suitable to achieve very high coating rates under an intensive plasma influence. The spectrum of materials capable of being deposited should be very large, even in the case of insulating layers. The efficiency of the process should be high. According to the invention, the material to be vaporised is vaporised by means of electron beams (7 ) from at least two vaporisation crucibles (1; 1). An electric voltage is applied to the vaporisation crucibles, so that their vapour-generating areas act as electrodes of an electric discharge. The material to be vaporised acts as a cathode or anode. The vaporisation crucibles (1; 1) are connected to earth potential through ohmic resistances (R1; R2). This process and system are preferably suitable for reactive coating large surfaces, as well as for reactive coating components, tools and steel strips (substrate 3).
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3.发明授权
公开(公告)号：EP0674805B1
公开(公告)日：1997-03-26
申请号：EP94901767.7
申请日：1993-12-15
CPC分类号： H01J37/32018 , C23C14/54 , H01J37/32623 , H01J37/3299
摘要： In known processes and devices, the arc discharge is monitored by controlling electrical parameters. In case of deviations, the power supply is switched off. In order to prevent the arc already in its preliminary formation stages, and to maintain the discharge process stable over a long period, the discharge process is interrupted by a regeneration phase. Its beginning and end are determined by on site measurement of a value which is compared with an experimentally determined plasma state set value. The invention is useful for plasma treatment of surfaces, plasma deposition of layers and plasma-assisted cleaning of surfaces.
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4.发明公开
公开(公告)号：EP0674805A1
公开(公告)日：1995-10-04
申请号：EP94901767.0
申请日：1993-12-15
CPC分类号： H01J37/32018 , C23C14/54 , H01J37/32623 , H01J37/3299
摘要： In known processes and devices, the arc discharge is monitored by controlling electrical parameters. In case of deviations, the power supply is switched off. In order to prevent the arc already in its preliminary formation stages, and to maintain the discharge process stable over a long period, the discharge process is interrupted by a regeneration phase. Its beginning and end are determined by on site measurement of a value which is compared with an experimentally determined plasma state set value. The invention is useful for plasma treatment of surfaces, plasma deposition of layers and plasma-assisted cleaning of surfaces.
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公开(公告)号：EP2087503A1
公开(公告)日：2009-08-12
申请号：EP07819513.8
申请日：2007-10-31
发明人： HEINSS, Jens-Peter , KIRCHHOFF, Volker , KLOSE, Lars , METZNER, Christoph , MORGNER, Henry , SCHEFFEL, Bert
IPC分类号： H01J37/32
CPC分类号： C23F4/00 , H01J37/32055 , H01J37/32596 , H01J37/32706
摘要： The invention relates to a device for the pre-treatment of at least one substrate (21), comprising a low voltage arc discharge source (24; 25) disposed in a vacuum chamber (22) for generating a plasma (26), from which charge carriers can be extracted, which can be applied to the surface of the substrate (21), wherein the substrate (21) is connected to the electric vacuum chamber mass (28), and a BIAS voltage is switched to accelerate the charge carriers on the substrate surface between the substrate (21) and the vacuum chamber mass (28), on one hand, and an electrode (25) close to a plasma potential in terms of voltage is switched, on the other hand.
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6.发明公开
公开(公告)号：EP1738395A1
公开(公告)日：2007-01-03
申请号：EP05707580.6
申请日：2005-02-23
发明人： HEINSS, Jens-Peter , SCHEFFEL, Bert , METZNER, Christoph , KIRCHHOFF, Volker , TENBUSCH, Matthias
CPC分类号： H01J37/3233 , C23C14/0021 , C23C14/0635 , C23C14/32
摘要： The invention relates to a method for depositing layers of carbide of at least one high-fusion metal (3) on at least one object (8) using high-speed electron beam evaporation in a vacuum chamber (1). According to the invention: an atmosphere that contains carbon is created in said vacuum chamber (1) by the influx of a reactive gas; the high-fusion metal (3) is evaporated using an electron beam (5); the deposition is supported by a plasma, the latter being generated on the surface of the high-fusion metal (3) that is to be evaporated by means of a diffuse arc discharge; and the coating rate is at least 20 nm/s and the object temperature is maintained at between 50 °C and 500 °C during the deposition process.
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公开(公告)号：EP4214348A1
公开(公告)日：2023-07-26
申请号：EP21777773.9
申请日：2021-09-16
IPC分类号： C23C14/06 , C23C14/30 , C23C14/24 , H01J37/305
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公开(公告)号：EP2087503B1
公开(公告)日：2013-12-11
申请号：EP07819513.8
申请日：2007-10-31
发明人： HEINSS, Jens-Peter , KIRCHHOFF, Volker , KLOSE, Lars , METZNER, Christoph , MORGNER, Henry , SCHEFFEL, Bert
CPC分类号： C23F4/00 , H01J37/32055 , H01J37/32596 , H01J37/32706
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公开(公告)号：EP0867036A1
公开(公告)日：1998-09-30
申请号：EP96939061.0
申请日：1996-11-15
发明人： GOEDICKE, Klaus , FIETZKE, Fred , RESCHKE, Jonathan , HEMPEL, Wolfgang , SCHEFFEL, Bert , METZNER, Christoph , SCHILLER, Siegfried
CPC分类号： H01J37/32018 , C23C14/022 , H01J37/34 , H01J2237/3322
摘要： Known methods and devices for pre-treatment of electrically conducting and non-conducting substrates require a relatively high level of technical outlay and are difficult to incorporate into the following coating process. Pre-treatment frequently does not ensure the adhesion required for coating. The invention proposes to maintain a low pressure glow discharge between the substrate to be cleaned and a counter-electrode. The substrate is periodically alternately switched as a cathode or anode, the frequency of the alternation being set in the range of from 1 Hz to 1000 Hz and the pulse lengths and/or the discharge voltage being independently adjustable. The method is used as a preliminary process for the coating of substrates which require an adhesive layer. Cutting tools, in particular, made of steel, hard metal or ceramic are treated before being coated.
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10.发明公开SPOTLESS ARC DIRECTED VAPOR DEPOSITION (SA-DVD) AND RELATED METHOD THEREOF 审中-公开展望SPOTLESS ARC STEAM存款及其相应的方法
公开(公告)号：EP2572014A1
公开(公告)日：2013-03-27
申请号：EP11778439.7
申请日：2011-05-06
申请人： University of Virginia Patent Foundation , Fraunhofer-Gesellschaft zur Förderung der Angewandten Forschung e.V.
发明人： WADLEY, Haydn N. G. , MATTAUSCH, Goesta , ROEGNER, Frank-Holm , SCHEFFEL, Bert , METZNER, Christoph
CPC分类号： C23C14/325 , C23C14/0021 , C23C14/228 , H01J37/3053 , H01J37/32055 , H01J37/3233 , H01J37/32357 , H01J37/32449 , H01J37/32568 , H01J37/32614 , H01J2237/006 , H01J2237/3137
摘要： A plasma assisted directed vapor deposition process that utilizes a spotless arc directed vapor deposition (SA-DVD) method for the creation of the plasma in a directed vapor deposition apparatus. Vapor is created by electron or other high intensity directed energy beam evaporation from one or more source materials contained in a water cooled crucible. This vapor is entrained in a transonic helium or other gas jet and transported to a substrate for deposition. The electron or other directed energy beam used for evaporation is simultaneously exploited to ionize the vapor and the jet forming gas (helium, or other gases including combinations of inert and reactant gases). An anode positioned near the electron beam impingement position attracts scattered electrons formed during the directed energy beams interaction with a target surface and enables the formation of an intense plasma. This plasma is at first transported towards the substrate by the vapor entraining gas jet through an ion-drag mechanism. However, if the substrate is sufficiently charged (electrically biased), the plasma ions are electrostatically accelerated towards the substrate and this extra momentum aids in vapor transport and deposition on a component surface.
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