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    SILICON CARBIDE PRODUCT, METHOD FOR PRODUCING SAME, AND METHOD FOR CLEANING SILICON CARBIDE PRODUCT
    3.
    发明公开
    SILICON CARBIDE PRODUCT, METHOD FOR PRODUCING SAME, AND METHOD FOR CLEANING SILICON CARBIDE PRODUCT 审中-公开
    硅胶玻璃钢

    公开(公告)号：EP1666645A4

    公开(公告)日：2009-01-07

    申请号：EP04747456

    申请日：2004-07-07

    申请人： ADMAP INC ,  MITSUI SHIPBUILDING ENG ,  OHMI TADAHIRO

    发明人： OHMI TADAHIRO ,  TERAMOTO AKINOBU ,  SANO SUMIO

    IPC分类号： C30B29/36 ,  H01L21/04 ,  H01L21/304 ,  H01L21/306 ,  H01L21/314 ,  H01L21/336 ,  H01L29/16 ,  H01L29/78

    CPC分类号： H01L21/02052 ,  C30B29/36 ,  H01L21/3148 ,  H01L29/1608 ,  Y10T428/31

    摘要： A silicon carbide product is disclosed which is characterized by having a surface with a metal impurity concentration of not more than 1×10 11 (atoms/cm 2 ). Also disclosed are a method for producing such a silicon carbide product and a method for cleaning a silicon carbide product. A silicon carbide having such a highly cleaned surface can be obtained by cleaning it with a hydrofluoric acid, a hydrochloric acid, or an aqueous solution containing a sulfuric acid and a hydrogen peroxide solution. The present invention provides a highly cleaned silicon carbide, and thus enables to produce a semiconductor device which is free from consideration on deterioration in characteristics caused by impurities. Further, when the silicon carbide is used in a unit for semiconductor production or the like, there is such an advantage that an object processed in the unit can be prevented from suffering an adverse affect of flying impurities.

    摘要翻译： 公开了一种碳化硅产品，其特征在于具有不大于1×10 11（原子/ cm 2）的金属杂质浓度的表面。 还公开了制造这种碳化硅产品的方法和清洁碳化硅产品的方法。 通过用氢氟酸，盐酸或含有硫酸和过氧化氢溶液的水溶液进行清洗，可以得到具有高度清洁表面的碳化硅。 本发明提供了一种高度清洁的碳化硅，因此能够制造出不考虑由杂质引起的特性劣化的半导体器件。 此外，当碳化硅用于半导体生产等的单元中时，具有能够防止在该单元中加工的物体遭受飞散杂质的不利影响的优点。

    REACTOR FOR MOISTURE GENERATION
    6.
    发明公开
    REACTOR FOR MOISTURE GENERATION 审中-公开
    MOISTURE制造槽

    公开(公告)号：EP1238942A4

    公开(公告)日：2005-07-06

    申请号：EP00931707

    申请日：2000-06-05

    申请人： FUJIKIN KK ,  OHMI TADAHIRO

    发明人： OHMI TADAHIRO ,  KAWADA KOUJI ,  IKEDA NOBUKAZU ,  MORIMOTO AKIHIRO ,  MINAMI YUKIO ,  TUBOTA KENJI ,  HONIDEN TERUO ,  HIRAI TOURU ,  KOMEHANA KATUNORI ,  HIRAO KEIJI

    IPC分类号： B01J8/02 ,  B01J10/00 ,  B01J12/00 ,  C01B5/00

    CPC分类号： B01J12/007 ,  B01J2219/00058 ,  B01J2219/00087 ,  B01J2219/00096 ,  C01B5/00

    摘要： A reactor for moisture generation completely preventing hydrogen gas from being ignited, back fire to a gas feed source side from occurring, and a platinum coating catalyst layer from being peeled off inside a reactor main body for moisture generation so as to further increase the safety of the reactor for moisture generation and reduce a dead space of an internal space inside the reactor main body in order to further reduce the size of the reactor main body, wherein an inlet side reactor main body member (1) having a gas feed port (1a) and an outlet side reactor main body member (2) having a moisture gas outlet port (2a) are combined opposedly to each other, these both members are welded with each other so as to form a reactor main body A, a reflector is provided inside the internal space (V) of the reactor main body, a platinum coating catalyst layer (8) is formed on the inner wall surface of the outlet side reactor main body member (2), and hydrogen and oxygen fed from the gas feed port (1a) to the internal space (V) of the reactor main body A are brought into contact with the platinum coating film (8b) to activate its reactivity, whereby hydrogen and oxygen are reacted under noncombustion state so as to produce water.

    SEMICONDUCTOR CIRCUIT FOR ARITHMETIC OPERATION AND METHOD OF ARITHMETIC OPERATION
    7.
    发明公开
    SEMICONDUCTOR CIRCUIT FOR ARITHMETIC OPERATION AND METHOD OF ARITHMETIC OPERATION 审中-公开
    HALBLEITERKREISLAUFFÜRARITHMETISCHE HANDLUNGEN UND VERFAHRENFÜRARTHMETISCHE HANDLUNGEN

    公开(公告)号：EP1039372A4

    公开(公告)日：2005-02-02

    申请号：EP98961396

    申请日：1998-12-17

    申请人： ULTRACLEAN TECHNOLOGY RES INST ,  OHMI TADAHIRO ,  I & F INC

    发明人： OHMI TADAHIRO ,  IMAI MAKOTO ,  NOZAWA TOSHIYUKI ,  FUJIBAYASHI MASANORI ,  KOTANI KOJI ,  SHIBATA TADASHI ,  NITTA TAKAHISA

    IPC分类号： G06F7/00 ,  G06F7/48 ,  G06F7/50 ,  G06F7/506

    CPC分类号： G06F7/4824 ,  G06F7/506

    摘要： A semiconductor circuit for arithmetic operation, which uses a reduced circuit area and provides high-speed processing by restricting nonessentials. The semiconductor circuit comprises an arithmetic circuit (adders 1-3) and delay means (memory 4). The arithmetic circuit includes arithmetic units for operation on input data, and they operate on digits of input data in a period of operation time, and produce results of operation, together with data corresponding to a carry, if any. The output from the arithmetic circuit is delayed by one period of operation time through the delay means.

    摘要翻译： 提供了一种用于算术处理的半导体电路和运算处理方法，其可以通过抑制浪费处理来提高处理数据的速率并减小电路的面积。 提供了一种用于计算输入数据的计算单元，该计算单元在计算时间单位内计算输入数字数据，并输出表示通过计算获得的结果的计算结果，并且如果在计算中产生进位，则计算电路（ 用于输出表示该进位的进位数据的加法器1-3）和用于将来自计算电路的计算结果延迟一个计算时间单位的延迟装置（存储器4）。

    METHOD FOR GENERATING WATER FOR SEMICONDUCTOR PRODUCTION
    9.
    发明公开
    METHOD FOR GENERATING WATER FOR SEMICONDUCTOR PRODUCTION 失效
    用于生产水半导体制造

    公开(公告)号：EP0922667A4

    公开(公告)日：2003-05-28

    申请号：EP98924654

    申请日：1998-06-12

    申请人： FUJIKIN KK ,  OHMI TADAHIRO

    发明人： OHMI TADAHIRO ,  MINAMI YUKIO ,  KAWADA KOJI ,  TANABE YOSHIKAZU ,  IKEDA NOBUKAZU ,  MORIMOTO AKIHIRO

    IPC分类号： C01B5/00

    CPC分类号： C01B5/00

    摘要： Process for generating moisture for use in semiconductor manufacturing, the process comprising feeding hydrogen and oxygen into a reactor provided with a platinum-coated catalyst layer on an interior wall, thus enhancing the reactivity between hydrogen and oxygen by catalytic action and instantaneously reacting the reactivity-enhanced hydrogen and oxygen at a temperature below the ignition point to produce moisture without undergoing combustion at a high temperature, wherein the amount of unreacted hydrogen occurring in the generated moisture in starting up or terminating the moisture generating reaction is minimized and wherein undesired reactions such as undesired silicon oxide film coating are avoided. When the generation of moisture is started up by feeding hydrogen and oxygen into the reactor provided with a platinum-coated catalyst layer on the inside wall thereof, oxygen first starts to be fed and, some time after that, the supply of hydrogen is begun. In terminating the moisture generating operation by cutting off the supply of hydrogen and oxygen into the reactor, the feeding of hydrogen is first stopped and, some time after that, the supply of oxygen is shut off.