公开(公告)号：EP2111637A4

公开(公告)日：2012-08-08

申请号：EP08728172

申请日：2008-01-24

Applicant: IBM

Inventor： BELYANSKY MICHAEL P ,  BONILLA GRISELDA ,  LIU XIAO HU ,  NGUYEN SON VAN ,  SHAW THOMAS M ,  SHOBHA HOSADURGA K ,  YANG DAEWON

IPC: H01L23/12 ,  H01L21/3105 ,  H01L21/318 ,  H01L21/768

CPC classification number: H01L21/02123 ,  H01L21/02126 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/02348 ,  H01L21/318 ,  H01L21/3185 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76834

公开(公告)号：EP1683187A4

公开(公告)日：2008-08-27

申请号：EP04810633

申请日：2004-11-09

Applicant: IBM

Inventor： DORIS BRUCE B ,  BELYANSKY MICHAEL P ,  BOYD DIANE C ,  CHIDAMBARRAO DURESETI ,  GLUSCHENKOV OLEG

IPC: H01L29/49 ,  H01L21/28 ,  H01L21/324 ,  H01L21/336 ,  H01L21/8238

CPC classification number: H01L29/7845 ,  H01L21/26513 ,  H01L21/28035 ,  H01L21/28167 ,  H01L21/28247 ,  H01L21/324 ,  H01L21/823807 ,  H01L21/823842 ,  H01L29/1083 ,  H01L29/4925 ,  H01L29/517 ,  H01L29/665 ,  H01L29/66545 ,  H01L29/6659

Abstract: A method of fabricating a semiconductor device structure, includes: providing a substrate, providing an electrode on the substrate, forming a recess in the electrode, the recess having an opening, disposing a small grain semiconductor material within the recess, covering the opening to contain the small grain semiconductor material, within the recess, and then annealing the resultant structure.

公开(公告)号：EP2377148A4

公开(公告)日：2016-03-16

申请号：EP09836605

申请日：2009-11-19

Applicant: IBM ,  FREESCALE SEMICONDUCTOR INC

Inventor： RAMACHANDRAN RAVIKUMAR ,  YAN HONGWEN ,  MOUMEN NAIM ,  SCHAEFFER JAMES KENYON ,  KRISHNAN SIDDARTH A ,  WONG KEITH KWONG HON ,  KWON UNOH ,  BELYANSKY MICHAEL P ,  WISE RICHARD

IPC: H01L21/3205 ,  H01L21/8238

CPC classification number: H01L21/823842 ,  H01L21/823857

公开(公告)号：EP1864319A4

公开(公告)日：2009-11-18

申请号：EP06748845

申请日：2006-03-29

Applicant: IBM

Inventor： BELYANSKY MICHAEL P ,  GLUSCHENKOV OLEG ,  LI YING ,  MALLIKARJUNAN ANUPAMA

IPC: H01L21/26

CPC classification number: H01L21/3185 ,  C23C16/345 ,  C23C16/45523 ,  H01L21/823807 ,  H01L21/823864 ,  H01L29/7833 ,  H01L29/7843

Abstract: A method for increasing the level of stress for amorphous thin film stressors by means of modifying the internal structure of such stressors is provided. The method includes first forming a first portion of an amorphous film stressor material on at least a surface of a substrate, said first portion having a first state of mechanical strain defining a first stress value. After the forming step, the first portion of the amorphous film stressor material is densified such that the first state of mechanical strain is not substantially altered, while increasing the first stress value. In some embodiments, the steps of forming and densifying are repeated any number of times to obtain a preselected and desired thickness for the stressor.