摘要:
An ohmic contact is formed to a device region in the surface of an extrinsic conductivity type group III-V semiconductor crystal (1) by providing a layer - (3) of an amphoteric dopant on the surface of the crystal and providing in that layer, at the desired location of the ohmic contact, a localised quantity of atoms of the element of the crystal which is capable of imparting with the amphoteric dopant the aforesaid extrinsic conductivity type, and heating the structure to diffuse atoms from the layer into the surface of the crystal to form the ohmic contact. A layer of Si on GaAs upon heating normally forms a rectifying contact. If a region of the Si layer contains As atoms, an ohmic contact is formed on heating.
摘要:
A metallic ohmic contact (1) is formed on the surface of an intermetallic compound semiconductor body (2) in which the net donor density of an amphoteric dopant is greater in a thin surface region extending into the body from the interface (3) between the contact (1) and the body (2) than in the bulk of the body (2). Preferably, the surface region has a net donor density greater than 5 x 10 19 atoms per cc and is 2 to 5 nm thick. The contact can be formed by growing a body of gallium arsenide in the presence of an arsenic overpressure and a source of germanium or silicon and then depositing a metal on the surface of the body.
摘要:
A silicon source for molecular beam epitaxial deposition heated by electric current through the silicon is provided wherein the silicon is configured in a plurality of filaments positioned between two broader electrical contact areas. The figures shows such a source comprising Z-shaped silicon filaments 15, 16, 17 integrated with and extending between electrical contact headers 18,19. A current source is connected in series with the source and causes resistance heating of the source.
摘要:
Submicron structure fabrication is accomplished by providing vapor chemical erosion of a compound crystal by suppressing the more volatile elements so that the less volatile element is provided with an anti-agglomeration and erosion rate limiting capability which can be followed by subsequent regrowth in the same environment. The erosion is sensitive to crystallographic orientation.
摘要:
The composition and doping profile of the emitter (4) produces an electron gas (16) in the base (3) adjacent a band offset heterojunction interface be- 'tween the emitter and the base. When a suitable bias is applied, the electron gas is confined adjacent to the interface by a low barrier (produced by layer 10). The kinetic energy of ballistic electrons crossing the base to the collector (2) is controlled to prevent intervalley scattering by an electrostatic barrier (7) that under influence of bias provides an essentially level conduction band in the portion of the base adjacent the collector.
摘要:
An ohmic contact is formed to a device region in the surface of an extrinsic conductivity type group III-V semiconductor crystal (1) by providing a layer - (3) of an amphoteric dopant on the surface of the crystal and providing in that layer, at the desired location of the ohmic contact, a localised quantity of atoms of the element of the crystal which is capable of imparting with the amphoteric dopant the aforesaid extrinsic conductivity type, and heating the structure to diffuse atoms from the layer into the surface of the crystal to form the ohmic contact. A layer of Si on GaAs upon heating normally forms a rectifying contact. If a region of the Si layer contains As atoms, an ohmic contact is formed on heating.
摘要:
The method of the present invention provides for collaborating between a first application and a second application, wherein the state of the first application is defined by one or more first variables, and wherein the state of the second application is defined by one or more second variables. The first variables are grouped into one or more first partitions each having a classification representing whether the first application is to send to the second application data that reflects changes to the first variables of the first partition associated with the classification. Upon detecting a change to one of said first variables, one of said first partitions that corresponds to the one of the first variables is identified, and the data reflecting the change to the one of the first variables is communicated from the first application to the second application according to said classification associated with the one of said first partitions. Advantageously, the method of the present invention provides for flexibility in controlling the level of collaboration between the applications, and may be used to provide for collaboration over low-bandwidth communication links.