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1.发明公开LEISTUNGSHALBLEITERMODUL UND VERFAHREN ZU DESSEN HERSTELLUNG 有权VERFAHREN ZU DESSEN HERSTELLUNG的LEISTUNGSHALBLEITERMODUL
公开(公告)号：EP1927132A2
公开(公告)日：2008-06-04
申请号：EP06805805.6
申请日：2006-09-21
发明人： KEMPER, Alfred , STROTMANN, Guido
IPC分类号： H01L21/48 , H01L21/607 , H05K3/32 , B23K20/10
CPC分类号： H05K3/328 , B23K20/10 , B23K2201/40 , H01L21/4853 , H01L24/29 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/85 , H01L25/072 , H01L2224/05554 , H01L2224/32225 , H01L2224/45124 , H01L2224/45147 , H01L2224/4807 , H01L2224/48091 , H01L2224/48137 , H01L2224/48227 , H01L2224/48458 , H01L2224/48464 , H01L2224/48472 , H01L2224/4903 , H01L2224/49051 , H01L2224/4911 , H01L2224/49111 , H01L2224/49175 , H01L2224/73265 , H01L2224/85099 , H01L2224/85205 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01068 , H01L2924/01074 , H01L2924/01082 , H01L2924/014 , H01L2924/181 , H01L2924/19043 , H01L2924/19107 , H05K1/0306 , H05K3/4046 , H05K2201/1028 , H05K2201/10287 , H05K2203/0285 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： A method for producing a power semiconductor module including forming a contact between a contact region and a contact element as an ultrasonic welding contact via a sonotrode. The ultrasonic welding operation also being used for joining the contact regions with the contact ends and consequently for joining the contacts and the foot regions.
摘要翻译： 一种用于制造功率半导体模块的方法，包括通过超声波焊接形成作为超声波焊接接点的接触区域和接触元件之间的接触。 超声波焊接操作也用于将接触区域与接触端部接合，并且因此用于接合触头和脚部区域。
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公开(公告)号：EP4372788A1
公开(公告)日：2024-05-22
申请号：EP22207850.3
申请日：2022-11-16
发明人： MEIS, Lukas , STROTMANN, Guido , DREPS, Florian
IPC分类号： H01L21/48 , H01L23/498
CPC分类号： H01L2224/4809120130101 , H01L2224/7326520130101 , H01L2224/4847220130101 , H01L2224/4822720130101 , H01L2224/3222520130101 , H01L23/49811 , H01L21/4853 , H01L25/072 , H01L23/3735 , H01L23/02
摘要： A method comprises exerting a pressing force on a section of a first surface of a metal layer by means of a punch, wherein either the metal layer is arranged on a working surface, with a second surface of the metal layer facing the working surface, wherein the second surface is arranged opposite the first surface, and the punch is pressed against the section of the first surface with a pressing force that forces material of the metal layer to flow up against a stroke of the punch, thereby forming a sleeve extending from the first surface in a vertical direction and away from the second surface, or the punch is pressed against the section of the first surface and forced through the metal layer towards the second surface with a pressing force that forces material of the metal layer to flow down with a stroke of the punch, thereby forming a sleeve extending from the second surface in a vertical direction and away from the first surface. The method further comprises, after forming the sleeve, arranging the metal layer in a housing of a power semiconductor module.
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公开(公告)号：EP1927132B1
公开(公告)日：2018-07-11
申请号：EP06805805.6
申请日：2006-09-21
发明人： KEMPER, Alfred , STROTMANN, Guido
CPC分类号： H05K3/328 , B23K20/10 , B23K2101/40 , H01L21/4853 , H01L24/29 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/85 , H01L25/072 , H01L2224/05554 , H01L2224/32225 , H01L2224/45124 , H01L2224/45147 , H01L2224/4807 , H01L2224/48091 , H01L2224/48137 , H01L2224/48227 , H01L2224/48458 , H01L2224/48464 , H01L2224/48472 , H01L2224/4903 , H01L2224/49051 , H01L2224/4911 , H01L2224/49111 , H01L2224/49175 , H01L2224/73265 , H01L2224/85099 , H01L2224/85205 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01068 , H01L2924/01074 , H01L2924/01082 , H01L2924/014 , H01L2924/181 , H01L2924/19043 , H01L2924/19107 , H05K1/0306 , H05K3/4046 , H05K2201/1028 , H05K2201/10287 , H05K2203/0285 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
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