公开(公告)号：EP2530710A2

公开(公告)日：2012-12-05

申请号：EP12169576.1

申请日：2012-05-25

申请人： Nippon Piston Ring Co., Ltd. ,  Ibaraki University

发明人： FUJII, Yoshitaka ,  ONUKI, Jin

IPC分类号： H01L23/49 ,  H01L21/60

CPC分类号： H01L24/45 ,  H01L24/05 ,  H01L24/43 ,  H01L24/48 ,  H01L24/85 ,  H01L25/072 ,  H01L2224/04042 ,  H01L2224/05624 ,  H01L2224/43848 ,  H01L2224/45012 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48227 ,  H01L2224/48458 ,  H01L2224/48472 ,  H01L2224/4851 ,  H01L2224/48724 ,  H01L2224/85099 ,  H01L2224/85205 ,  H01L2224/85948 ,  H01L2924/00011 ,  H01L2924/01005 ,  H01L2924/01012 ,  H01L2924/01014 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/1203 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15787 ,  H01L2924/20105 ,  H01L2924/20106 ,  H01L2924/3512 ,  H01L2924/00015 ,  H01L2924/00014 ,  H01L2924/20107 ,  H01L2924/01026 ,  H01L2924/01025 ,  H01L2924/00 ,  H01L2924/013 ,  H01L2924/01024 ,  H01L2924/00013 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20755 ,  H01L2924/20756 ,  H01L2924/20757 ,  H01L2924/20758 ,  H01L2924/20759 ,  H01L2924/2076 ,  H01L2924/2075 ,  H01L2924/20754 ,  H01L2924/01006

摘要： The generation and propagation of cracks in a connection to a connected member is prevented. A semiconductor device 10 is provided with a connection structure 15 between a bonding wire 17 consisting of an aluminum alloy which contains at least magnesium and silicon and in which a total of contents of the magnesium and the silicon is not less than 0.03 wt% but not more than 1.0 wt% and a silicon chip 16 to which this bonding wire 17 is connected. An aluminum-silicon film 16a is formed on the surface of the silicon chip 16. This connection structure 15 has a compound 18 containingmagnesium and silicon in a matrix layer 17a constituting the bonding wire 17, in a fine grain layer 17b of the aluminum alloy formed between the matrix layer 17a and the aluminum-silicon film 16a, and at an interface between the matrix layer 17a and the fine grain layer 17b.

摘要翻译： 防止与连接构件的连接中的裂纹的产生和传播。 半导体器件10在由至少包含镁和硅的铝合金构成的接合线17之间设置有连接结构15，其中镁和硅的总含量不小于0.03重量％，但不包括 大于1.0重量％的硅芯片16和该接合线17所连接的硅芯片16。 在硅芯片16的表面上形成铝硅膜16a。该连接结构15在形成有铝合金的细晶粒层17b中具有构成接合线17的矩阵层17a中的含有镁和硅的化合物18 在矩阵层17a和铝硅膜16a之间以及在基体层17a和细晶粒层17b之间的界面处。

公开(公告)号：EP2201614A2

公开(公告)日：2010-06-30

申请号：EP08806266.6

申请日：2008-09-12

申请人： PhotonStar LED Limited

发明人： MCKENZIE, James, Stuart ,  ZOOROB, Majd

IPC分类号： H01L33/00

CPC分类号： H01L33/46 ,  H01L25/0753 ,  H01L33/0079 ,  H01L33/385 ,  H01L33/62 ,  H01L33/641 ,  H01L2224/05599 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48227 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2224/85099 ,  H01L2224/85399 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/181 ,  H01L2224/48091 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A light emitting device is provided having high luminous output while maintaining high wall plug efficiency, wherein the high thermal and electrical conductivity paths of the device are separated during the semiconductor wafer and die level manufacturing step. The device includes an electrical conducting mirror layer, which reflects at least 60% of generated light incident on it, and an isolation layer having electrical insulating properties and thermal conducting properties. A first electrode, which is not in contact with the main semiconductor layers of the device, is located on the mirror layer. A light emitting module, system and projection system incorporating the light emitting device are also described, as is a method of manufacture of the device.

摘要翻译： 提供具有高发光输出同时保持高壁插头效率的发光器件，其中在半导体晶片和晶片级制造步骤期间该器件的高导热和导电路径被分离。 该装置包括反射入射到其上的至少60％的产生光的导电镜层，以及具有电绝缘性能和导热性能的隔离层。 不与器件的主半导体层接触的第一电极位于镜面层上。 还描述了并入发光器件的发光模块，系统和投影系统，以及该器件的制造方法。

公开(公告)号：EP0791955B1

公开(公告)日：2008-10-29

申请号：EP97102764.4

申请日：1997-02-20

申请人： Texas Instruments Incorporated

发明人： Hortaleza, Edgardo R. ,  Hogan, Timothy

IPC分类号： B23K20/00 ,  H01L21/607

CPC分类号： H01L24/85 ,  B23K20/007 ,  B23K2201/40 ,  H01L24/45 ,  H01L24/48 ,  H01L24/78 ,  H01L2224/05624 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48247 ,  H01L2224/48463 ,  H01L2224/48624 ,  H01L2224/48724 ,  H01L2224/78301 ,  H01L2224/78302 ,  H01L2224/85099 ,  H01L2224/85148 ,  H01L2224/85181 ,  H01L2224/85205 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01204 ,  H01L2924/01327 ,  H01L2924/14 ,  H01L2924/20107 ,  H01L2924/20309 ,  H01L2924/00 ,  H01L2924/00015 ,  H01L2924/013 ,  H01L2924/00013 ,  H01L2924/00012 ,  H01L2224/85399

公开(公告)号：EP1474266B1

公开(公告)日：2007-04-04

申请号：EP03706280.9

申请日：2003-02-05

申请人： Infineon Technologies AG

发明人： HOSSEINI, Khalil

IPC分类号： B23K20/00 ,  B23K20/10 ,  B23K26/20

CPC分类号： H01L24/85 ,  B23K20/004 ,  B23K20/10 ,  B23K26/20 ,  B23K2201/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/78 ,  H01L2224/05655 ,  H01L2224/32245 ,  H01L2224/43826 ,  H01L2224/43827 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45686 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/48655 ,  H01L2224/48755 ,  H01L2224/48855 ,  H01L2224/73265 ,  H01L2224/78313 ,  H01L2224/78318 ,  H01L2224/85099 ,  H01L2224/85181 ,  H01L2224/85205 ,  H01L2224/85214 ,  H01L2224/85455 ,  H01L2224/92 ,  H01L2224/92247 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/0101 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01057 ,  H01L2924/01068 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/12042 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/20755 ,  H01L2924/20756 ,  H01L2924/20757 ,  H01L2924/20758 ,  H01L2924/20759 ,  H01L2924/2076 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2224/85 ,  H01L2224/45644 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/00015 ,  H01L2924/2075

摘要： The invention relates to a method for wire bonding and a method for the production of a bonding connection. A bonding point (2, 20) is heated by means of a laser beam (4) originating from a laser. The arrangement (1) comprises a wedge-wedge-ultrasound-bonding device with a bonding needle (5), a copper or aluminium bonding wire guide (7) and a copper or aluminium wire (8) for a wedge-wedge-ultrasound-bonding method and at least one of the bonding points (2, 20) displays a hard metal covering (6).

公开(公告)号：EP1654753A2

公开(公告)日：2006-05-10

申请号：EP04780916.5

申请日：2004-08-11

申请人： Advanced Interconnect Technologies Limited

发明人： ISLAM, Shafidul ,  LAU, Daniel, Kwok ,  SAN ANTONIO, Romarico Santos ,  SUBAGIO, Anang ,  MCKERREGHAN, Michael Hannan ,  LITILIT, Edmunda, Gut-Omen

IPC分类号： H01L21/00

CPC分类号： H01L23/3114 ,  H01L21/4832 ,  H01L21/6835 ,  H01L23/3107 ,  H01L23/49548 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/78 ,  H01L24/81 ,  H01L24/85 ,  H01L24/86 ,  H01L24/97 ,  H01L2221/68377 ,  H01L2224/05599 ,  H01L2224/16245 ,  H01L2224/32245 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48455 ,  H01L2224/48465 ,  H01L2224/48472 ,  H01L2224/48599 ,  H01L2224/48699 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2224/78302 ,  H01L2224/78313 ,  H01L2224/78318 ,  H01L2224/81801 ,  H01L2224/85001 ,  H01L2224/85099 ,  H01L2224/85203 ,  H01L2224/85205 ,  H01L2224/85399 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12041 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2224/45139 ,  H01L2224/85 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/00015

摘要： A lead frame (52, 100, 112) for a semiconductor device (die) package (50, 102, 110) is described. Each of the leads (60) in the lead frame (52, 100, 112) includes an interposer (64) having one end (66) disposed proximate the outer face (58) of the package (50, 102, 110) and another end (68) disposed proximate the die (14). Extending from opposite ends of the interposer (64) are a board connecting post (70) and a support post (74). A bond site (78) is formed on a surface of the interposer (64) opposite the support post (74). Each of the leads (60) is electrically connected to an associated input/output (I/O) pad (80) on the die (14) via wirebonding, tape bonding, or flip-chip attachment to the bond site (78). Where wirebonding is used, a wire electrically connecting the I/O pad (80) to the bond site (78) may be wedge bonded to both the I/O pad (80) and the bond site (78). The support post (74) provides support to the end (68) of the interposer (64) during the bonding and coating processes.(FIG. 3).

公开(公告)号：EP0645810A1

公开(公告)日：1995-03-29

申请号：EP94912058.8

申请日：1994-04-06

申请人： TOKUYAMA CORPORATION

发明人： MIYAHARA, Kenichiro

IPC分类号： H01L23/04 ,  H01L23/50

CPC分类号： H01L23/057 ,  H01L23/3675 ,  H01L23/49537 ,  H01L23/49822 ,  H01L23/50 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/2919 ,  H01L2224/29339 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49109 ,  H01L2224/73265 ,  H01L2224/85099 ,  H01L2224/85203 ,  H01L2224/85205 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01012 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01031 ,  H01L2924/01032 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01043 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01057 ,  H01L2924/01058 ,  H01L2924/01059 ,  H01L2924/0106 ,  H01L2924/01061 ,  H01L2924/01063 ,  H01L2924/01064 ,  H01L2924/01065 ,  H01L2924/01066 ,  H01L2924/01067 ,  H01L2924/01068 ,  H01L2924/0107 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01076 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01083 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/07802 ,  H01L2924/09701 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/15153 ,  H01L2924/1517 ,  H01L2924/15787 ,  H01L2924/16152 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/20102 ,  H01L2924/20753 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/00014 ,  H01L2924/0665 ,  H01L2924/00 ,  H01L2924/20109 ,  H01L2924/00012

摘要： A package for a semiconductor chip having the following features: (a) a power-supply layer, a ground layer, and a signal layer are formed in multilayer through intermediate layers including insulating layers; (b) the power-supply layer and ground layer each comprise an inner lead region exposed from the intermediate layers, an outer lead region, and a conductive region sandwiched by these two regions and covered by the intermediate layers; and (c) the conductive regions of the power-supply layer and ground layer consist of planar conductive members. The self-inductances of the power-supply and ground layers of this package are low, and the capacitance of the capacitor formed by these layers is low. Therefore, the noise of the power-supply system is little.

摘要翻译： 一种具有以下特征的半导体芯片的封装：（a）电源层，接地层和信号层，形成为包括绝缘层在内的多层中间层; （b）电源层和接地层各自包括从中间层露出的内引线区域，外引线区域和被这两个区域夹持并被中间层覆盖的导电区域; 和（c）电源层和接地层的导电区域由平面导电构件构成。 该封装的电源和接地层的自感电位低，由这些层形成的电容器的电容低。 因此，电源系统的噪音很小。

公开(公告)号：EP0074378A1

公开(公告)日：1983-03-23

申请号：EP82900878.0

申请日：1982-02-05

申请人： MOTOROLA, INC.

发明人： OLSEN, Dennis R. ,  SPANJER, Keith G.

IPC分类号： H01L21 ,  H01L23

CPC分类号： H01L23/3107 ,  H01L23/045 ,  H01L23/4924 ,  H01L23/49562 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L2224/04026 ,  H01L2224/29111 ,  H01L2224/32245 ,  H01L2224/45014 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/4823 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/48599 ,  H01L2224/48699 ,  H01L2224/48799 ,  H01L2224/73265 ,  H01L2224/85099 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01072 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/1305 ,  H01L2924/14 ,  H01L2924/15747 ,  H01L2924/16152 ,  H01L2924/181 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/20755 ,  H01L2924/20756 ,  H01L2924/20757 ,  H01L2924/20758 ,  H01L2924/20759 ,  H01L2924/2076 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/0133 ,  H01L2924/3512 ,  H01L2924/00015 ,  H01L2224/05599

摘要： Dispositif a semi-conducteur (10) comprenant un boitier non plaque metallurgiquement compatible. Le boitier comprend une zone de montage (2) de en alliage de cuivre sans placage (14) sur laquelle est fixee un de semi-conducteur (12). Le de semi-conducteur (12) est metallise sur sa surface de montage (40) pour assurer un contact electrique. Une soudure metallique (38) compatible aussi bien avec l'alliage de cuivre qu'avec la surface de metallisation du de relie le de (12) a la zone de montage de de (14). Le boitier comprend en outre une partie de conducteur en alliage de cuivre sans placage (16) reliee physiquement (42) a la zone de montage de de (14). La surface superieure du de semi-conducteur (12) est pourvue d'une couche de metallisation deposee selon un motif (24, 26) assurant le contact electrique avec des parties selectionnees du de. Le contact electrique entre la couche de metallisation de la surface superieure du de (24, 26) et la partie de conducteur (16) du boitier est realisee au moyen d'un ruban (28) de cuivre soude aux ultrasons. Le de (12) et le ruban d'interconnection (28) sont ensuite proteges par un element de scellement epoxyde (18) ou par un couvercle metallique soude (58).

公开(公告)号：EP2161748A3

公开(公告)日：2010-05-05

申请号：EP09167725.2

申请日：2009-08-12

申请人： Biotronik CRM Patent AG

发明人： Schwanke, Dieter ,  Zeilmann, Christian ,  Krenkel, Michael

IPC分类号： H01L23/498 ,  H01L21/607 ,  H01L21/48 ,  H01L23/15

CPC分类号： H01L23/49811 ,  H01L21/4867 ,  H01L23/15 ,  H01L23/49866 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L2224/05599 ,  H01L2224/32225 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45565 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/48599 ,  H01L2224/48644 ,  H01L2224/48699 ,  H01L2224/48744 ,  H01L2224/73265 ,  H01L2224/85099 ,  H01L2224/85207 ,  H01L2224/85444 ,  H01L2224/85469 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01058 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/15787 ,  H01L2924/19043 ,  H01L2924/19106 ,  H05K1/0306 ,  H05K1/112 ,  H05K1/167 ,  H05K3/248 ,  H05K3/28 ,  H05K3/4061 ,  H05K3/4629 ,  H05K2201/035 ,  Y10T29/49149 ,  Y10T29/49163 ,  Y10T428/24917 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/00015 ,  H01L2924/013 ,  H01L2224/45624

摘要： Die vorliegende Erfindung betrifft eine LTCC-Substratstruktur mit mindestens einem Kontaktelement zum Anschluss eines Drahtleiters, das eine erste, auf und/oder in dem keramischen Substrat angeordnete Metallisierung (20) zur elektrischen Verbindung mit dem Drahtleiter aufweist, wobei die erste Metallisierung (20) vorzugsweise Silber oder einer Silberlegierung enthält. Zur Vermeindung von Via-Posting oder eines Plattierungsprozesses sind eine die erste Metallisierung (20) überdeckende Diffusionssperrschicht (22), welche mit einem lokal wirkenden Aufbringungsverfahren hergestellt ist, und eine auf der Diffusionssperrschicht (22) angeordnete zweite Metallschicht (24) vorgesehen, wobei die zweite Metallschicht (24) vorzugsweise Gold und/oder Platin und/oder eine Legierung enthält, die mindestens eines dieser Elemente aufweist. Die Erfindung gibt außerdem ein Herstellungsverfahren für eine derartige LTCC-Substratstruktur an.

公开(公告)号：EP1927132A2

公开(公告)日：2008-06-04

申请号：EP06805805.6

申请日：2006-09-21

申请人： Infineon Technologies AG

发明人： KEMPER, Alfred ,  STROTMANN, Guido

IPC分类号： H01L21/48 ,  H01L21/607 ,  H05K3/32 ,  B23K20/10

CPC分类号： H05K3/328 ,  B23K20/10 ,  B23K2201/40 ,  H01L21/4853 ,  H01L24/29 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/85 ,  H01L25/072 ,  H01L2224/05554 ,  H01L2224/32225 ,  H01L2224/45124 ,  H01L2224/45147 ,  H01L2224/4807 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48227 ,  H01L2224/48458 ,  H01L2224/48464 ,  H01L2224/48472 ,  H01L2224/4903 ,  H01L2224/49051 ,  H01L2224/4911 ,  H01L2224/49111 ,  H01L2224/49175 ,  H01L2224/73265 ,  H01L2224/85099 ,  H01L2224/85205 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01068 ,  H01L2924/01074 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/181 ,  H01L2924/19043 ,  H01L2924/19107 ,  H05K1/0306 ,  H05K3/4046 ,  H05K2201/1028 ,  H05K2201/10287 ,  H05K2203/0285 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A method for producing a power semiconductor module including forming a contact between a contact region and a contact element as an ultrasonic welding contact via a sonotrode. The ultrasonic welding operation also being used for joining the contact regions with the contact ends and consequently for joining the contacts and the foot regions.

摘要翻译： 一种用于制造功率半导体模块的方法，包括通过超声波焊接形成作为超声波焊接接点的接触区域和接触元件之间的接触。 超声波焊接操作也用于将接触区域与接触端部接合，并且因此用于接合触头和脚部区域。

公开(公告)号：EP1191587A3

公开(公告)日：2002-07-17

申请号：EP01119622.7

申请日：2001-08-20

申请人： Hitachi, Ltd.

发明人： Eguchi, Shuji ,  Asano, Masahiko ,  Watanabe, Mutsumi ,  Nakatsuru, Kunito ,  Tokuda, Hiroatsu

IPC分类号： H01L23/18 ,  H01L23/16

CPC分类号： H05K3/284 ,  H01L23/24 ,  H01L24/45 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/85099 ,  H01L2224/85207 ,  H01L2224/8592 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01039 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/19041 ,  H01L2924/19105 ,  H01L2924/19107 ,  H01L2924/3025 ,  Y10S428/901 ,  Y10T428/31663 ,  H01L2924/00014 ,  H01L2924/2076 ,  H01L2924/20753 ,  H01L2924/20752 ,  H01L2924/00

摘要： The invention provides a packaging structure applied to an automotive component having semiconductors (3, 4) and electronic parts mounted on a ceramic base (1), characterized in that the semiconductors and electronic parts are partly ore entirely sealed with a thixotropic silicone gel (10) which has a thixotropy index of about 1.5 - 3.6 and a penetration depth of about 6 - 10 mm and a rate of change in viscosity of less than 10 % of the initial value.

摘要翻译： 本发明提供了一种应用于具有半导体（3,4）和安装在陶瓷基体（1）上的电子部件的汽车部件的封装结构，其特征在于半导体和电子部件部分地完全用触变性硅酮凝胶（10 ），其触变指数约为1.5-3.6，渗透深度约为6-10mm，粘度变化率小于初始值的10％。