公开(公告)号：EP4158689A1

公开(公告)日：2023-04-05

申请号：EP21816767.4

申请日：2021-05-07

申请人： Intel Corporation

发明人： BLACKWELL, James, Munro ,  BRISTOL, Robert, L. ,  CHEN, Xuanxuan ,  DOYLE, Lauren, Elizabeth ,  GSTREIN, Florian ,  HAN, Eungnak ,  HOLYBEE, Brandon, Jay ,  KRYSAK, Marie ,  MAHDI, Tayseer ,  SCHENKER, Richard, E. ,  SINGH, Gurpreet ,  WALKER, Emily, Susan

IPC分类号： H01L23/485 ,  H01L23/535 ,  H01L23/538

公开(公告)号：EP3050084A1

公开(公告)日：2016-08-03

申请号：EP13894765.0

申请日：2013-09-27

申请人： Intel Corporation

发明人： BRISTOL, Robert L. ,  BLACKWELL, James M. ,  CLENDENNING, Scott B. ,  GSTREIN, Florian ,  HAN, Eungnak ,  KLOSTER, Grant M. ,  ROBERTS, Jeanette M. ,  ROMERO, Patricio E. ,  HOURANI, Rami

IPC分类号： H01L21/31

CPC分类号： H01L23/528 ,  H01L21/28562 ,  H01L21/288 ,  H01L21/3105 ,  H01L21/31058 ,  H01L21/311 ,  H01L21/32 ,  H01L21/32051 ,  H01L21/321 ,  H01L21/76801 ,  H01L21/76816 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76849 ,  H01L21/76877 ,  H01L21/76897 ,  H01L23/5226 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of an aspect includes forming a first thicker layer of a first material over a first region having a first surface material by separately forming each of a first plurality of thinner layers by selective chemical reaction. The method also includes limiting encroachment of each of the first plurality of thinner layers over a second region that is adjacent to the first region. A second thicker layer of a second material is formed over the second region having a second surface material that is different than the first surface material.

公开(公告)号：EP4163968A1

公开(公告)日：2023-04-12

申请号：EP22205431.4

申请日：2022-09-22

申请人： Intel Corporation

发明人： CHANDHOK, Manish ,  KARPOV, Elijah V. ,  HARAN, Mohit ,  PATEL, Reken ,  WALLACE, Charles H. ,  SINGH, Gurpreet ,  GSTREIN, Florian ,  HAN, Eungnak ,  ALAAN, Urusa ,  GULER, Leonard P. ,  NYHUS, Paul A.

IPC分类号： H01L23/528 ,  H01L29/78 ,  H01L23/485 ,  H01L21/768 ,  H01L23/532

摘要： Contact over active gate (COAG) structures with conductive trench contact taps are described. In an example, an integrated circuit structure includes a plurality of gate structures above a substrate, each of the gate structures including a gate insulating layer thereon. A plurality of conductive trench contact structures is alternating with the plurality of gate structures, each of the conductive trench contact structures including a trench insulating layer thereon. One of the plurality of conductive trench contact structures includes a conductive tap structure protruding through the corresponding trench insulating layer. An interlayer dielectric material is above the trench insulating layers and the gate insulating layers. A conductive structure is in direct contact with the conductive tap structure of the one of the plurality of conductive trench contact structures.

公开(公告)号：EP3050099A1

公开(公告)日：2016-08-03

申请号：EP14847868.8

申请日：2014-09-17

申请人： Intel Corporation

发明人： NYHUS, Paul A. ,  HAN, Eungnak ,  SIVAKUMAR, Swaminathan ,  PUTNA, Ernisse S.

IPC分类号： H01L23/48 ,  H01L23/12

CPC分类号： G03F7/0392 ,  B81C1/00428 ,  B81C2201/0149 ,  G03F7/0002 ,  G03F7/0045 ,  G03F7/038 ,  G03F7/039 ,  G03F7/11 ,  G03F7/16 ,  G03F7/2004 ,  G03F7/2037 ,  G03F7/26 ,  H01L21/0337 ,  H01L21/31058 ,  H01L21/32 ,  H01L21/3205 ,  H01L21/32139 ,  H01L21/76816

摘要： Self-aligned via and plug patterning for back end of line (BEOL) interconnects are described. In an example, a structure for directed self-assembly includes a substrate and a block co-polymer structure disposed above the substrate. The block co-polymer structure has a polystyrene (PS) component and a polymethyl methacrylate (PMMA) component. One of the PS component or the PMMA component is photosensitive.

摘要翻译： 描述了用于后端（BEOL）互连的自对准通孔和插头图案。 在一个实例中，用于定向自组装的结构包括设置在衬底上方的衬底和嵌段共聚物结构。 嵌段共聚物结构具有聚苯乙烯（PS）组分和聚甲基丙烯酸甲酯（PMMA）组分。 PS组件或PMMA组件之一是光敏的。

公开(公告)号：EP4156258A1

公开(公告)日：2023-03-29

申请号：EP22197188.0

申请日：2022-09-22

申请人： INTEL Corporation

发明人： CHANDHOK, Manish ,  KARPOV, Elijah V. ,  HARAN, Mohit K. ,  PATEL, Reken ,  WALLACE, Charles H. ,  SINGH, Gurpreet ,  GSTREIN, Florian ,  HAN, Eungnak ,  ALAAN, Urusa ,  GULER, Leonard P. ,  NYHUS, Paul A.

IPC分类号： H01L23/528 ,  H01L29/78 ,  H01L23/485 ,  H01L21/768 ,  H01L23/532

摘要： Contact over active gate (COAG) structures with conductive trench contact taps are described. In an example, an integrated circuit structure includes a plurality of gate structures above a substrate, each of the gate structures including a gate insulating layer thereon. A plurality of conductive trench contact structures is alternating with the plurality of gate structures, each of the conductive trench contact structures including a trench insulating layer thereon. One of the plurality of conductive trench contact structures includes a conductive tap structure protruding through the corresponding trench insulating layer. An interlayer dielectric material is above the trench insulating layers and the gate insulating layers. A conductive structure is in direct contact with the conductive tap structure of the one of the plurality of conductive trench contact structures.

公开(公告)号：EP4044219A3

公开(公告)日：2022-08-31

申请号：EP21208872.8

申请日：2021-11-17

申请人： INTEL Corporation

发明人： SINGH, Gurpreet ,  GSTREIN, Florian ,  HAN, Eungnak ,  KRYSAK, Marie ,  MAHDI, Tayseer ,  CHEN, Xuanxuan ,  HOLYBEE, Brandon

IPC分类号： H01L21/768 ,  H01L21/027

摘要： Methods for forming via openings by using a lamellar triblock copolymer, a polymer nanocomposite, and a mixed epitaxy approach are disclosed. An example method includes forming a guiding pattern (e.g., a topographical guiding pattern, chemical guiding pattern, or mixed guiding pattern) on a surface of a layer of an IC device, forming lamellar structures based on the guiding pattern by using the lamellar triblock copolymer or forming cylindrical structures based on the guiding pattern by using the polymer nanocomposite, and forming via openings by removing a lamella from each of at least some of the lamellar structures or removing a nanoparticle from each of at least some of the cylindrical structures.

公开(公告)号：EP3238234A1

公开(公告)日：2017-11-01

申请号：EP14909260.3

申请日：2014-12-24

申请人： Intel Corporation

发明人： YOUNKIN, Todd R. ,  LEESON, Michael J. ,  BLACKWELL, James M. ,  PUTNA, Ernisse S. ,  KRYSAK, Marie ,  HOURANI, Rami ,  HAN, Eungnak ,  BRISTOL, Robert L.

IPC分类号： H01L21/308 ,  H01L21/311

CPC分类号： H01L21/0271 ,  G03F7/0035 ,  G03F7/094 ,  G03F7/095 ,  G03F7/115 ,  H01L21/76801 ,  H01L21/76816 ,  H01L21/76897 ,  H01L23/528 ,  H01L2224/16225

摘要： Photodefinable alignment layers for chemical assisted patterning and approaches for forming photodefinable alignment layers for chemical assisted patterning are described. An embodiment of the invention may include disposing a chemically amplified resist (CAR) material over a hardmask that includes a switch component. The CAR material may then be exposed to form exposed resist portions. The exposure may produces acid in the exposed portions of the CAR material that interact with the switch component to form modified regions of the hardmask material below the exposed resist portions.

摘要翻译： 描述了用于化学辅助图案化的可光定向排列层和用于形成用于化学辅助图案化的可光定向排列层的方法。 本发明的实施例可以包括在包括开关部件的硬掩模上设置化学放大抗蚀剂（CAR）材料。 然后可以暴露CAR材料以形成暴露的抗蚀剂部分。 暴露可以在与开关部件相互作用的CAR材料的暴露部分中产生酸以在暴露的抗蚀剂部分下方形成硬掩模材料的改性区域。

公开(公告)号：EP4218048A1

公开(公告)日：2023-08-02

申请号：EP21873154.5

申请日：2021-08-24

申请人： INTEL Corporation

发明人： NYHUS, Paul A. ,  WALLACE, Charles H. ,  CHANDHOK, Manish ,  HARAN, Mohit K. ,  SINGH, Gurpreet ,  HAN, Eungnak ,  GSTREIN, Florian ,  SCHENKER, Richard E. ,  SHYKIND, David ,  ALOYSIUS, Jinnie ,  PURSEL, Sean

IPC分类号： H01L21/8234 ,  H01L21/02 ,  H01L21/768 ,  G06F1/16

公开(公告)号：EP3437120B1

公开(公告)日：2020-11-18

申请号：EP16897275.0

申请日：2016-03-28

申请人： INTEL Corporation

发明人： WALLACE, Charles H. ,  CHANDHOK, Manish ,  NYHUS, Paul A. ,  HAN, Eungnak ,  BOJARSKI, Stephanie A. ,  GSTREIN, Florian ,  SINGH, Gurpreet

IPC分类号： H01L21/027 ,  H01L21/336

公开(公告)号：EP3559983A1

公开(公告)日：2019-10-30

申请号：EP16924501.6

申请日：2016-12-23

申请人： INTEL Corporation

发明人： GSTREIN, Florian ,  HAN, Eungnak ,  HOURANI, Rami ,  BRAIN, Ruth A. ,  NYHUS, Paul A. ,  CHANDHOK, Manish ,  WALLACE, Charles H. ,  TSANG, Chi-Hwa

IPC分类号： H01L21/768