公开(公告)号：EP1542520A4

公开(公告)日：2008-12-03

申请号：EP03792769

申请日：2003-08-21

Applicant: JSR CORP

Inventor： OHTA MASARU ,  INOMATA KATSUMI ,  IWANAGA SHINICHIRO

IPC: G03F7/11 ,  G03F7/40 ,  G03F7/42 ,  H01L21/60 ,  H01L23/12 ,  H05K3/28 ,  H05K3/34

CPC classification number: H01L24/12 ,  H01L24/02 ,  H01L24/03 ,  H01L24/11 ,  H01L2224/0401 ,  H01L2224/0603 ,  H01L2224/06102 ,  H01L2224/10126 ,  H01L2224/1131 ,  H01L2224/11334 ,  H01L2224/1147 ,  H01L2224/11474 ,  H01L2224/13022 ,  H01L2224/13099 ,  H01L2224/13111 ,  H01L2224/13147 ,  H01L2224/1403 ,  H01L2224/16 ,  H01L2224/16235 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01009 ,  H01L2924/01011 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01041 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01056 ,  H01L2924/01073 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04953 ,  H01L2924/14 ,  H01L2924/19042 ,  H05K3/28 ,  H05K3/3473 ,  H05K3/3478 ,  H05K3/3484 ,  H05K2201/09472 ,  H05K2201/09509 ,  H05K2203/041 ,  H05K2203/043 ,  H05K2203/0568 ,  H05K2203/0577 ,  H05K2203/0793

Abstract: A method for forming a bump on an electrode pad characterized in that at least the following steps (a)-(d) are conducted on a wiring substrate which is composed of a base and a plurality of electrode pads: (a) a step wherein a double-layered film composed of a lower layer made of an alkali-soluble, radiation-nonsensitive resin composition and an upper layer made of a negative, radiation-sensitive resin composition is formed on the wiring substrate, and then an aperture pattern is formed in a corresponding position of the electrode pad; (b) a step wherein a low-melting metal is introduced into the aperture pattern; (c) a step wherein the low-melting metal is reflowed by conducting a press or a heat treatment so as to from a bump, and (d) a step wherein the double-layered film is removed from the substrate. By using the double-layered film having different characteristics, the high-resolution property and the easy-release property become compatible.

公开(公告)号：EP1469353A4

公开(公告)日：2007-09-19

申请号：EP02781788

申请日：2002-11-15

Applicant: JSR CORP

Inventor： OHTA MASARU ,  ITO ATSUSHI ,  MOCHIZUKI ISAMU ,  INOMATA KATSUMI ,  IWANAGA SHINICHIRO

IPC: G03F7/023 ,  G03F7/095 ,  G03F7/40 ,  G03F7/26 ,  G03F7/022 ,  G11B5/60

CPC classification number: G03F7/0236 ,  G03F7/0233 ,  G03F7/095 ,  G03F7/40

Abstract: A method of forming a film by vapor deposition and/or sputtering by the lift-off technique and a two-layer resist film with which a burr-free film layer can be easily formed on a substrate surface. The method of forming a pattern uses this two-layer resist film. The method of pattern formation is characterized by including the step of forming, on a substrate 1, a two-layer film which comprises: a resist film 2 formed from a positive radiation-sensitive resin composition comprising A a radical polymer having a hydroxy and/or carboxy group, B a compound having a quinonediazide group, and C a solvent and a resist film 3 formed from a positive radiation-sensitive resin composition comprising D a polymer having a phenolic hydroxy group, E a compound having a quinonediazide group, and F a solvent.