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    OPTICAL ELECTRIC FIELD AMPLIFYING ELEMENT AND PROBE USING THE SAME
    1.
    发明公开
    OPTICAL ELECTRIC FIELD AMPLIFYING ELEMENT AND PROBE USING THE SAME 有权
    优化电子产品焊接VERSTÄRKENDESELEMENT UND SONDE UNTER VERWENDUNG DAVON

    公开(公告)号：EP2214001A1

    公开(公告)日：2010-08-04

    申请号：EP08841615.1

    申请日：2008-10-24

    申请人： Japan Science and Technology Agency ,  National Institute for Materials Science

    发明人： SHINGAYA, Yoshitaka ,  NAKAYAMA, Tomonobu ,  AONO, Masakazu

    IPC分类号： G01N21/65 ,  B82B1/00

    CPC分类号： G01N21/658

    摘要： The optical electric field enhancement element of the invention comprises a nanorod where a conductive layer and an insulating layer are laminated. In particular, the optical electric field enhancement element comprising a tungsten oxide nanorod exhibits a high enhancement effect not by an aggregate of fine crystals but by the crystal structure itself, therefore securing good reproducibility and a stable Raman scattering enhancement effect. A sensor comprising the optical electric field enhancement element enables various high-precision analyses heretofore impossible in the art.

    摘要翻译： 本发明的光电场增强元件包括层叠导电层和绝缘层的纳米棒。 特别地，包含氧化钨纳米棒的光电场增强元件不是通过微细晶体的集合而是通过晶体结构本身具有高的增强效果，因此确保了良好的再现性和稳定的拉曼散射增强效果。 包括光学电场增强元件的传感器能​​够实现迄今为止在本领域中不可能的各种高精度分析。

    ELECTRONIC DEVICE HAVING CONTROLLABLE CONDUCTANCE
    5.
    发明授权
    ELECTRONIC DEVICE HAVING CONTROLLABLE CONDUCTANCE 有权
    应税电导电子设备

    公开(公告)号：EP1329958B1

    公开(公告)日：2009-04-22

    申请号：EP01961237.3

    申请日：2001-08-30

    申请人： Japan Science and Technology Agency ,  RIKEN

    发明人： AONO, Masakazu ,  TERABE, Kazuya ,  HASEGAWA, Tsuyosi ,  NAKAYAMA, Tomonobu

    IPC分类号： H01L45/00 ,  G11C13/02

    CPC分类号： H01L45/1266 ,  G11C13/02 ,  H01L45/085 ,  H01L45/1226 ,  H01L49/006

    摘要： An electronic device comprising a first electrode made of a mixture conductor material having ion conductivity and electron conductivity and a second electrode made of a conductive material, in which a voltage is so applied between the first and second electrodes that the first electrode is negative with respect to the second electrode and thereby mobile ions are moved from the first electrode to the second one to form a bridge between the electrodes. Preferably the mixture conductor material is Ag2S, Ag2Se, Cu2S, or Cu2Se. An interelectrode conductance control method is also disclosed which comprises at least one step of the steps of applying a voltage in such a way that the potential of the second electrode is negative with respect to that of the first electrode so as to move mobile ions from the first electrode to the second electrode and thereby to form a bridge between the electrodes and thinning or cutting the bridge by inverting the polarity of the voltage between the electrodes.

    SOLID ELECTROLYTE SWITCHING DEVICE, FPGA USING SAME, MEMORY DEVICE, AND METHOD FOR MANUFACTURING SOLID ELECTROLYTE SWITCHING DEVICE
    8.
    发明公开
    SOLID ELECTROLYTE SWITCHING DEVICE, FPGA USING SAME, MEMORY DEVICE, AND METHOD FOR MANUFACTURING SOLID ELECTROLYTE SWITCHING DEVICE 有权
    固体电解质开关元件，用相同的方法和FPGA和存储设备生产同样

    公开(公告)号：EP1501124A1

    公开(公告)日：2005-01-26

    申请号：EP03719228.3

    申请日：2003-04-25

    申请人： Japan Science and Technology Agency ,  Riken

    发明人： SAKAMOTO, Toshitsugu ,  AONO, Masakazu ,  HASEGAWA, Tsuyoshi ,  NAKAYAMA, Tomonobu ,  SUNAMURA, Hiroshi ,  KAWAURA, Hisao ,  SUGIBAYASHI, Naohiko

    IPC分类号： H01L21/82 ,  H01L27/04 ,  H01L27/10 ,  H03K19/173 ,  G11C17/00

    CPC分类号： G11C13/0011 ,  G11C2213/15 ,  G11C2213/56 ,  G11C2213/79 ,  H01L27/101 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1266 ,  H01L45/142 ,  H01L45/144 ,  H01L45/1633 ,  H01L2924/0002 ,  H01L2924/00

    摘要： The present invention provides a solid electrolyte switching device, which can maintain an on or off state when the power source is removed, the resistance of which in on the state is low, and which is capable of integration and re-programming, and FPGA and a memory device using the same, and a method of manufacturing the same.
    A solid electrolyte switching device (10, 10', 20, 20') comprises a substrate (11) in which surface is coated with an insulation layer, a first interconnection layer (13) set on said substrate (11), an ion supplying layer (17) set on said first interconnection layer (13), a solid electrolyte layer (16) set on said ion supplying layer (17), an interlevel insulating layer (12) having a via hole set to cover said first interconnection layer (13), said ion supplying layer (17), and said solid electrolyte layer (16), a counter electrode layer (15) set to contact said solid electrolyte layer (16) through the via hole of said interlevel insulating layer (12), and a second interconnection layer (14) set to cover said counter electrode layer (15). The switching device can be provided in which the on state, or the off state can be arbitrarily set by the threshold voltage applied between the ion supplying layer (17) and the counter electrode layer (15), which is non-volatile, and the resistance of which in the on state is low. The switching device of the present invention is also simple and fine in structure, and hence makes it possible to provide smaller switching devices than are currently available. Further, using the switching device of the present invention as the switching device of an FPGA (30) makes it possible to provide re-programmable and fast operation FPGA (30). Using the switching device of the present invention as a memory cell of a memory device makes it possible to provide a non-volatile memory device with high programming and reading speed.

    摘要翻译： 本发明提供的固体电解质开关装置，其可以当电源被移除的打开或关闭状态保持，其中在电阻上的状态为低，并且所有其能够集成和重新编程，并且FPGA和的 使用相同的存储装置，及其制造方法。 的固体电解质开关装置（10，10”，20,20' ）包括一个基片，该表面在绝缘层涂覆有（11），在所述基板设置的第一互连层（13）（11） 上离子供给层（17）设置具有通孔设置为覆盖所述关于所述离子供给层（17）组所述第一互连层（13），固体电解质层（16），在层间绝缘层（12）上 第一互连层（13），所述离子供给层（17）和所述固体电解质层（16），设置通过所述层间绝缘层的通孔以接触穿过所述固体电解质层（16）的对置电极层（15） （12），并设置以覆盖所述电极层（15）的第二互连层（14）。 开关装置可以在其中被设置在接通状态，或关闭状态可以通过离子供给层（17）并且其是非易失性的对置电极层（15），所有和之间施加的阈值电压来任意设置 其中的阻力在上状态为低。 本发明的开关装置结构如此简单，精细，并且使得可以提供更小的。因此开关设备比目前已经上市。 此外，使用本发明的作为一个FPGA（30）的开关设备的开关装置，能够提供可再编程和快速操作的FPGA（30）。 使用本发明的存储器件的存储单元的开关装置使得有可能以高的编程和读出速度提供一个非易失性存储器装置。