公开(公告)号：EP1639634B1

公开(公告)日：2009-04-01

申请号：EP04736684.4

申请日：2004-06-11

申请人： NXP B.V.

发明人： ROOZEBOOM, Freddy ,  BUIJSMAN, Adrianus, A., J. ,  GAMAND, Patrice ,  KEMMEREN, Antonius, L., A., M. ,  HUBERT, Gerardus, T., M.

IPC分类号： H01L21/768 ,  H01L21/8242 ,  H01L21/334 ,  H01L27/06 ,  H01L23/48

CPC分类号： H01L23/66 ,  H01L21/486 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/49827 ,  H01L23/49838 ,  H01L23/49872 ,  H01L24/16 ,  H01L25/0657 ,  H01L25/18 ,  H01L27/0805 ,  H01L28/60 ,  H01L29/0657 ,  H01L29/66181 ,  H01L2223/6622 ,  H01L2223/6666 ,  H01L2224/05001 ,  H01L2224/05009 ,  H01L2224/05568 ,  H01L2224/0557 ,  H01L2224/16225 ,  H01L2224/16265 ,  H01L2225/06517 ,  H01L2225/06548 ,  H01L2225/06572 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/1205 ,  H01L2924/1431 ,  H01L2924/1434 ,  H01L2924/3011 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/05124 ,  H01L2224/05147

摘要： A semiconductor substrate comprises both vertical interconnects and vertical capacitors with a common dielectric layer. The substrate can be suitably combined with further devices to form an assembly. The substrate can be made in etching treatments including a first step on the one side, and then a second step on the other side of the substrate.

公开(公告)号：EP1368858B1

公开(公告)日：2011-02-23

申请号：EP02712184.7

申请日：2002-02-25

申请人： NXP B.V.

发明人： BUIJSMAN, Adrianus, A., J. ,  VERSPEEK, Johannes, M., C. ,  DE GRAAUW, Antonius, J., M.

IPC分类号： H01Q23/00 ,  H04B1/38 ,  H01Q1/38 ,  H05K9/00

CPC分类号： H01Q1/2291 ,  H01L23/552 ,  H01L24/48 ,  H01L2223/6677 ,  H01L2224/05599 ,  H01L2224/45099 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/09701 ,  H01L2924/14 ,  H01L2924/16151 ,  H01L2924/16152 ,  H01L2924/1617 ,  H01L2924/19041 ,  H01L2924/3025 ,  H01Q1/22 ,  H01Q1/38 ,  H01Q23/00 ,  H04B1/38 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2924/00

摘要： A radio module (10) suitable for RF applications, especially for Bluetooth, comprises a substrate (1) with a semiconductor device (11), a shield (21), and an antenna (31). The shield (21) is located between the antenna (31) and the semiconductor device (11), and is present on the same side (2) of the substrate (1) as the semiconductor device (11) and the antenna (31). By preference, the antenna (31) and the shield (21) are connected to one another by support means (32, 42).

公开(公告)号：EP1634371B1

公开(公告)日：2008-08-06

申请号：EP04734878.4

申请日：2004-05-26

申请人： NXP B.V.

发明人： SMOLDERS, Adrianus, B. ,  PULSFORD, Nicolas, J. ,  BUIJSMAN, Adrianus, A., J. ,  PASCAL, Philippe ,  HADDAD, Fattah

IPC分类号： H03H7/06

CPC分类号： H03H7/06 ,  H01L2224/16145 ,  H01L2224/16245 ,  H01L2224/32145 ,  H01L2224/48091 ,  H01L2224/48145 ,  H01L2224/48147 ,  H01L2224/48257 ,  H01L2224/4917 ,  H01L2224/73265 ,  H01L2924/181 ,  H03L7/093 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/00

摘要： The electronic device (100) of the invention comprises a semiconductor device (30) and a low-pass filter (20), which are present in a stacked configuration, and which together include a phase locked loop. The low-pass filter is preferably embodied by vertical trench capacitors, and preferably comprises a drift compensation part. The device (100) can be suitably provided in an open loop architecture. In a preferred embodiment,the low-pass filter comprises a large capacitor (C2) and a small capacitor (C1) connected in parallel,the large capacitor (C2) being connected in series with a resistor (R1).