-
公开(公告)号：EP3086362A1
公开(公告)日：2016-10-26
申请号：EP15866377.3
申请日：2015-06-05
发明人： ODA, Daizo , ETO, Motoki , YAMADA, Takashi , HAIBARA, Teruo , OISHI, Ryo , UNO, Tomohiro , OYAMADA, Tetsuya
CPC分类号： H01L24/45 , C22C9/00 , C22F1/08 , H01L24/05 , H01L24/43 , H01L24/48 , H01L24/85 , H01L2224/05624 , H01L2224/4312 , H01L2224/43125 , H01L2224/4321 , H01L2224/43848 , H01L2224/45 , H01L2224/45005 , H01L2224/45015 , H01L2224/45109 , H01L2224/45144 , H01L2224/45147 , H01L2224/45565 , H01L2224/45572 , H01L2224/45609 , H01L2224/45644 , H01L2224/45664 , H01L2224/48011 , H01L2224/48247 , H01L2224/48465 , H01L2224/48507 , H01L2224/48824 , H01L2224/85045 , H01L2224/85054 , H01L2224/85065 , H01L2224/85075 , H01L2224/8509 , H01L2224/85203 , H01L2224/85439 , H01L2924/00011 , H01L2924/01005 , H01L2924/01012 , H01L2924/01015 , H01L2924/01028 , H01L2924/01031 , H01L2924/01032 , H01L2924/01045 , H01L2924/01046 , H01L2924/01078 , H01L2924/10253 , H01L2924/1576 , H01L2924/181 , H01L2924/00014 , H01L2924/00012 , H01L2924/20106 , H01L2924/20107 , H01L2924/20108 , H01L2924/20109 , H01L2924/20111 , H01L2924/20752 , H01L2924/01204 , H01L2924/01049 , H01L2924/01014 , H01L2924/01029 , H01L2924/013 , H01L2924/00013 , H01L2924/01001 , H01L2924/01007 , H01L2924/20105 , H01L2924/20656 , H01L2924/00 , H01L2924/2011 , H01L2924/01004 , H01L2924/01033
摘要： There is provided a Cu bonding wire having a Pd coating layer on a surface thereof, that improves bonding reliability of a ball bonded part in a high-temperature and high-humidity environment and is suitable for on-vehicle devices.
The bonding wire for a semiconductor device includes a Cu alloy core material and a Pd coating layer formed on a surface of the Cu alloy core material, and the bonding wire contains In of 0.011 to 1.2% by mass and has the Pd coating layer of a thickness of 0.015 to 0.150 µm. With this configuration, it is able to increase the bonding longevity of a ball bonded part in a high-temperature and high-humidity environment, and thus to improve the bonding reliability. When the Cu alloy core material contains one or more elements of Pt, Pd, Rh and Ni in an amount, for each element, of 0.05 to 1.2% by mass, it is able to increase the reliability of a ball bonded part in a high-temperature environment of 175°C or more. When an Au skin layer is further formed on a surface of the Pd coating layer, wedge bondability improves.-
公开(公告)号：EP3382747A1
公开(公告)日：2018-10-03
申请号：EP16900523.8
申请日：2016-09-23
发明人： ODA, Daizo , OHKABE, Takumi , HAIBARA, Teruo , YAMADA, Takashi , OYAMADA, Tetsuya , UNO, Tomohiro
IPC分类号： H01L21/60
摘要： The present invention has as its object the provision of a bonding wire for semiconductor devices mainly comprised of Ag, in which bonding wire for semiconductor devices, the bond reliability demanded for high density mounting is secured and simultaneously a sufficient, stable bond strength is realized at a ball bond, no neck damage occurs even in a low loop, the leaning characteristic is excellent, and the FAB shape is excellent.
To solve this problem, the bonding wire for semiconductor devices according to the present invention contains one or more of Be, B, P, Ca, Y, La, and Ce in a total of 0.031 at% to obtain a 0.180 at%, further contains one or more of In, Ga, and Cd in a total of 0.05 at% to 5.00 at%, and has a balance of Ag and unavoidable impurities. Due to this, it is possible to obtain a bonding wire for semiconductor devices sufficiently forming an intermetallic compound layer at a ball bond interface to secure the bond strength of the ball bond, not causing neck damage even in a low loop, having a good leaning characteristic, and having a good FAB shape.-
公开(公告)号：EP4365931A1
公开(公告)日：2024-05-08
申请号：EP22948050.4
申请日：2022-10-18
发明人： UNO, Tomohiro , OYAMADA, Tetsuya , ODA, Daizo , ETO, Motoki
IPC分类号： H01L21/60
CPC分类号： H01L21/60
摘要： There is provided a novel Cu bonding wire for semiconductor devices that reduces a galvanic corrosion in a rigorous high-temperature environment to achieve a favorable bond reliability of the 2nd bonding part. The bonding wire for semiconductor devices includes a core material of Cu or Cu alloy, and a coating layer containing a conductive metal other than Cu formed on a surface of the core material. The bonding wire is characterized in that:
in a concentration profile in a depth direction of the wire obtained by performing measurement using Auger electron spectroscopy (AES), an average value of sum of a Pd concentration CPd (atomic%) and an Ni concentration CNi (atomic%), CPd+CNi, for measurement points in the coating layer is 50 atomic% or more, an average value of a ratio of CPd to CNi, CPd/CNi, for measurement points in the coating layer is 0.2 or more and 20 or less and a thickness dt of the coating layer is 20 nm or more and 180 nm or less,
an Au concentration CAu at a surface of the wire is 10 atomic% or more and 85 atomic% or less, and
an average size of crystal grains in a circumferential direction of the wire is 35 nm or more and 200 nm or less when the surface of the wire is analyzed by using an Electron Backscattered Diffraction (EBSD) method.-
公开(公告)号：EP4234734A1
公开(公告)日：2023-08-30
申请号：EP21882506.5
申请日：2021-09-24
摘要： There is provided a novel Ag alloy bonding wire for semiconductor devices which provides an excellent bonded ball shape during ball bonding, which is required for high-density packaging. The Ag alloy bonding wire for semiconductor devices is made of an Ag alloy that contains one or more elements selected from the group consisting of Te, Bi and Sb and that satisfies at least one of the following conditions (1) to (3):
(1) a concentration of Te is 5 to 500 at. ppm;
(2) a concentration of Bi is 5 to 500 at. ppm; and
(3) a concentration of Sb is 5 to 1,500 at. ppm.-
公开(公告)号：EP4120328A1
公开(公告)日：2023-01-18
申请号：EP20924290.8
申请日：2020-03-13
发明人： YAMADA, Takashi , NISHIBAYASHI, Akihito , HAIBARA, Teruo , ODA, Daizo , ETO, Motoki , OYAMADA, Tetsuya , KOBAYASHI, Takayuki , UNO, Tomohiro
IPC分类号： H01L21/60
摘要： There is provided an Al bonding wire which can achieve a sufficient bonding reliability of bonded parts of the bonding wire under a high temperature state where a semiconductor device using the Al bonding wire is operated. The Al bonding wire contains 0.01 to 1% of Sc, and further contains 0.01 to 0.1% in total of at least one or more of Y, La, Ce, Pr and Nd. With regard to the Al bonding wire, a recrystallization temperature thereof is increased, so that the proceeding of recrystallization of the bonding wire can be suppressed, and strength of the wire can be prevented from being decreased even when the semiconductor device is continuously used under a high temperature environment. Accordingly, the Al bonding wire can sufficiently secure the reliability of the bonded parts after a high-temperature long-term hysteresis.
-
公开(公告)号：EP4071256A1
公开(公告)日：2022-10-12
申请号：EP20896310.8
申请日：2020-11-20
发明人： OISHI, Ryo , ODA, Daizo , ARAKI, Noritoshi , SHIMOMURA, Kota , UNO, Tomohiro , OYAMADA, Tetsuya
摘要： There is provided a copper bonding wire having an improved storage life in the atmosphere. There is specifically provided a copper bonding wire for semiconductor devices characterized in that a density of crystal grain boundary on a surface of the wire is 0.6 (µm/µm 2 ) or more and 1.6 (µm/µm 2 ) or less.
-
公开(公告)号：EP4289985A1
公开(公告)日：2023-12-13
申请号：EP22749661.9
申请日：2022-01-31
发明人： UNO, Tomohiro , SUTO, Yuya , OYAMADA, Tetsuya , ODA, Daizo , KURIHARA, Yuto , ETO, Motoki
摘要： There is provided an Al wiring material which can achieve sufficient bond reliability of bonded parts in a high-temperature environment at the time when a semiconductor device operates. The Al wiring material containing one or more of Pd and Pt so as to satisfy 3 ≤ x1a ≤ 90 or 10 ≤ x1b ≤ 250 , and 3 ≤ x1a + x1b ≤ 300 ,
where x1a and x1b are respectively a content of Pd [mass ppm] and a content of Pt [mass ppm],
with the balance comprising Al, and
an average crystal grain diameter on a cross-section perpendicular to a longitudinal direction of the Al wiring material is 3 to 35 µm.-
公开(公告)号：EP4289984A1
公开(公告)日：2023-12-13
申请号：EP22749660.1
申请日：2022-01-31
发明人： KURIHARA, Yuto , ODA, Daizo , ETO, Motoki , OISHI, Ryo , OYAMADA, Tetsuya , UNO, Tomohiro
摘要： There is provided a novel Al wiring material that achieves both of a suppression of chip damage and a thermal shock resistance. In aspect 1, the Al wiring material includes an Al core material and an Al coating layer formed on a surface of the Al core material, and satisfies 1.2 ≤ H 1h /H 1s where H 1h is a Vickers hardness of the Al core material (Hv) and H 1s is a Vickers hardness of the Al coating layer (Hv). In aspect 2, the Al wiring material includes an Al core material and an Al coating layer formed on a surface of the Al core material, and satisfies 1.2 ≤ H 2h /H 2s where H 2s is a Vickers hardness of the Al core material (Hv) and H 2h is a Vickers hardness of the Al coating layer (Hv).
-
公开(公告)号：EP4289983A1
公开(公告)日：2023-12-13
申请号：EP22749659.3
申请日：2022-01-31
发明人： SUTO, Yuya , UNO, Tomohiro , OYAMADA, Tetsuya , ODA, Daizo , ETO, Motoki , KURIHARA, Yuto
摘要： To provide an Al bonding wire exhibiting a favorable high-temperature and high-humidity service life in a high-temperature and high-humidity environment required for next-generation vehicle-mounted power devices. The Al bonding wire for semiconductor devices containing equal to or larger than 3 mass ppm and equal to or smaller than 500 mass ppm of one or more of Pd and Pt in total, in which, as a result of measuring a crystal orientation on a cross section parallel to a wire axis direction including a wire axis of the bonding wire, an orientation ratio of a crystal orientation angled at 15 degrees or less to the wire axis direction is equal to or higher than 30% and equal to or lower than 90%.
-
公开(公告)号：EP4109499A1
公开(公告)日：2022-12-28
申请号：EP21757478.9
申请日：2021-02-19
IPC分类号： H01L21/60
摘要： There is provided a copper bonding wire that exhibits a favorable bondability even when a scrub at the time of bonding is reduced. The copper bonding wire is characterized in that when a sum of percentages of Cu, Cu 2 O, CuO and Cu(OH) 2 on a surface of the wire as measured by X-ray Photoelectron Spectroscopy (XPS) is defined as 100%, Cu[II]/Cu[I] which is a ratio of a total percentage of CuO and Cu(OH) 2 (Cu[II]) corresponding to bivalent Cu to a percentage of Cu 2 O (Cu[I]) corresponding to monovalent Cu falls within a range from 0.8 to 12.
-
-
-
-
-
-
-
-
-
搜索结果
21 条记录 (耗时 0.018 秒)
