公开(公告)号：EP2478600A4

公开(公告)日：2014-09-10

申请号：EP10817307

申请日：2010-09-14

申请人： RICOH CO LTD

发明人： JIKUTANI NAOTO ,  HARASAKA KAZUHIRO ,  SUGAWARA SATORU ,  SATO SHUNICHI

IPC分类号： H01S5/183

CPC分类号： H01S5/18313 ,  B82Y20/00 ,  H01S5/0014 ,  H01S5/18327 ,  H01S5/1835 ,  H01S5/18355 ,  H01S5/18369 ,  H01S5/18394 ,  H01S5/2009 ,  H01S5/3054 ,  H01S5/3202 ,  H01S5/3406 ,  H01S5/423 ,  H01S2301/166

公开(公告)号：EP3167491A4

公开(公告)日：2017-07-26

申请号：EP15819204

申请日：2015-07-08

申请人： RICOH CO LTD

发明人： SATO SHUNICHI

IPC分类号： H01L31/0687 ,  H01L31/0304 ,  H01L31/0693 ,  H01L31/18

CPC分类号： H01L31/0687 ,  H01L31/03046 ,  H01L31/06875 ,  H01L31/0693 ,  H01L31/1892 ,  Y02E10/544 ,  Y02P70/521

公开(公告)号：EP2786457A4

公开(公告)日：2015-05-20

申请号：EP12854434

申请日：2012-11-29

申请人： RICOH CO LTD

发明人： SUZUKI RYOICHIRO ,  SATO SHUNICHI

IPC分类号： H01S5/183 ,  G04F5/14 ,  H01S5/026 ,  H01S5/042 ,  H01S5/20 ,  H01S5/343 ,  H01S5/40 ,  H01S5/42 ,  H03L7/26

CPC分类号： H01S5/187 ,  B82Y20/00 ,  G04F5/145 ,  H01S5/026 ,  H01S5/0421 ,  H01S5/18311 ,  H01S5/18341 ,  H01S5/18344 ,  H01S5/18358 ,  H01S5/18369 ,  H01S5/2086 ,  H01S5/3407 ,  H01S5/34313 ,  H01S5/34373 ,  H01S5/4087 ,  H01S5/42 ,  H01S5/423 ,  H01S2301/166 ,  H01S2301/176 ,  H03B17/00 ,  H03L7/26

摘要： Disclosed is a surface-emitting laser element including a semiconductor substrate and plural surface-emitting lasers configured to emit light mutually different wavelengths, each surface-emitting laser including a lower Bragg reflector provided on the semiconductor substrate, a resonator provided on the lower Bragg reflector, an upper Bragg reflector provided on the resonator, and a wavelength adjustment layer provided in the upper Bragg reflector or lower Bragg reflector, the wavelength adjustment layers included in the surface-emitting lasers having mutually different thicknesses, at least one of the wavelength adjustment layers including adjustment layers made of two kinds of materials, and numbers of the adjustment layers included in the wavelength adjustment layers being mutually different.

公开(公告)号：EP2351172A4

公开(公告)日：2012-08-29

申请号：EP09829185

申请日：2009-11-24

申请人： RICOH CO LTD

发明人： HARASAKA KAZUHIRO ,  SATO SHUNICHI ,  JIKUTANI NAOTO

IPC分类号： H01S5/183 ,  H01S5/022 ,  H01S5/343

CPC分类号： G03G15/04 ,  B82Y20/00 ,  G02B26/10 ,  H01S5/18 ,  H01S5/18311 ,  H01S5/18347 ,  H01S5/1835 ,  H01S5/18355 ,  H01S5/18358 ,  H01S5/18391 ,  H01S5/3202 ,  H01S5/3403 ,  H01S5/3436 ,  H01S5/423

摘要： A surface-emitting laser device configured to emit laser light in a direction perpendicular to a substrate includes a p-side electrode surrounding an emitting area on an emitting surface to emit the laser light; and a transparent dielectric film formed on an outside area outside a center part of the emitting area and within the emitting area to lower a reflectance to be less than that of the center part. The outside area within the emitting area has shape anisotropy in two mutually perpendicular directions.

公开(公告)号：EP2013952A4

公开(公告)日：2011-04-27

申请号：EP07742998

申请日：2007-04-27

申请人： RICOH CO LTD

发明人： SATO SHUNICHI ,  ITOH AKIHIRO ,  SHOUJI HIROYOSHI ,  HAYASHI YOSHINORI ,  ICHII DAISUKE ,  HARA KEI ,  FUJII MITSUMI

IPC分类号： H01S5/183 ,  B41J2/44

CPC分类号： B41J2/45 ,  B41J2/473 ,  B82Y20/00 ,  G02B26/123 ,  H01S5/18311 ,  H01S5/18358 ,  H01S5/3432 ,  H01S5/423

公开(公告)号：EP2436090A4

公开(公告)日：2017-08-09

申请号：EP10780346

申请日：2010-03-15

申请人： RICOH CO LTD

发明人： SHOUJI HIROYOSHI ,  SATO SHUNICHI ,  ITOH AKIHIRO ,  HARASAKA KAZUHIRO

IPC分类号： H01S5/183 ,  H01S5/42

CPC分类号： B32B37/14 ,  H01S5/0282 ,  H01S5/0425 ,  H01S5/18313 ,  H01S5/1835 ,  H01S5/18355 ,  H01S5/18358 ,  H01S5/18369 ,  H01S5/18377 ,  H01S5/18391 ,  H01S5/3202 ,  H01S5/423

摘要： A disclosed method of manufacturing a surface emitting laser includes laminating a transparent dielectric layer on an upper surface of a laminated body; forming a first resist pattern on an upper surface of the dielectric layer, the first resist pattern including a pattern defining an outer perimeter of a mesa structure and a pattern protecting a region corresponding to one of the relatively high reflection rate part and the relatively low reflection rate part included in an emitting region; etching the dielectric layer by using the first resist pattern as an etching mask; and forming a second resist pattern protecting a region corresponding to an entire emitting region. These steps are performed before the mesa structure is formed.

摘要翻译： 公开的制造表面发射激光器的方法包括：在透明介电层上层压层压体的上表面; 在所述介​​电层的上表面上形成第一抗蚀剂图案，所述第一抗蚀剂图案包括限定台面结构的外周边的图案和保护对应于所述较高反射率部分和所述较低反射率部分中的一个的区域的图案 包括在发光区域中的高速部分; 通过使用第一抗蚀剂图案作为蚀刻掩模蚀刻介电层; 以及形成保护对应于整个发光区域的区域的第二抗蚀剂图案。 这些步骤在台面结构形成之前执行。

公开(公告)号：EP2973745A4

公开(公告)日：2016-03-02

申请号：EP14763163

申请日：2014-03-12

申请人： RICOH CO LTD

发明人： SATO SHUNICHI

IPC分类号： H01L31/0687 ,  H01L31/0304 ,  H01L31/043 ,  H01L31/0693 ,  H01L31/18

CPC分类号： H01L31/0687 ,  H01L31/0304 ,  H01L31/03046 ,  H01L31/035272 ,  H01L31/043 ,  H01L31/0693 ,  H01L31/1844 ,  H01L31/1892 ,  Y02E10/544

摘要： A compound semiconductor photovoltaic cell includes a compound semiconductor substrate; one or more first photoelectric conversion cells deposited on the compound semiconductor substrate; a bonding layer deposited on the one or more first photoelectric conversion cells; and one or more second photoelectric conversion cells bonded to the one or more first photoelectric conversion cells via the bonding layer, and disposed on a light incident side of the one or more first photoelectric conversion cells in a light incident direction. Further, band gaps of the first and the second photoelectric conversion cells decrease as the first and the second photoelectric conversion cells approach from the light incident side toward a back side in the light incident direction, and when there is one second photoelectric conversion cells, a band gap of the bonding layer is greater than or equal to a band gap of the second photoelectric conversion cell.

公开(公告)号：EP2517322A4

公开(公告)日：2014-12-31

申请号：EP10839426

申请日：2010-12-15

申请人： RICOH CO LTD

发明人： ADACHI KAZUHIKO ,  SATO SHUNICHI ,  SUGAWARA SATORU ,  ISHII TOSHIHIRO

IPC分类号： H01S5/022 ,  B41J2/45 ,  B41J2/455 ,  B41J2/47 ,  B82Y20/00 ,  G02B26/12 ,  H01S5/042 ,  H01S5/183 ,  H01S5/34 ,  H01S5/42

CPC分类号： B41J2/45 ,  B41J2/455 ,  B41J2/473 ,  B82Y20/00 ,  G02B26/124 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/49171 ,  H01L2924/1815 ,  H01S5/02208 ,  H01S5/02228 ,  H01S5/0224 ,  H01S5/02264 ,  H01S5/02288 ,  H01S5/02296 ,  H01S5/0425 ,  H01S5/18313 ,  H01S5/18347 ,  H01S5/1835 ,  H01S5/18355 ,  H01S5/18394 ,  H01S5/3406 ,  H01S5/423 ,  H01L2924/00014

摘要： An optical device includes a surface-emitting laser array having a plurality of light-emitting portions; a package member on which the surface-emitting laser array is disposed; and a transparent member retained on the package member and disposed on an optical path of a light beam emitted by the surface-emitting laser array. The transparent member includes an incident plane on which the light beam emitted by the surface-emitting laser array is incident. The incident plane is inclined with respect to an emitting surface of the surface-emitting laser array at a first inclination angle which is smaller than a second inclination angle at which the light emitted by one of the light-emitting portions is incident on another, most-distant one, of the light-emitting portions via reflection by the transparent member.

摘要翻译： 一种光学器件，包括具有发光部的多个表面发射激光器阵列; 在其上表面发射激光器阵列被设置在封装构件; 和透明构件保持在封装件上，并设置在由所述表面发射激光器阵列发射的光束的光路中。 所述透明构件包括规划到入射在由所述表面发射激光阵列发射的光束入射。 入射平面倾斜相对于在以第一倾斜角发射的表面发射激光器阵列的表面的所有其比在所述光由所述发光部分中的一个发射的第二倾斜角度较小的入射另一个，最 经由反射-distant之一，发射光部分的由所述透明部件。

公开(公告)号：EP2923384A4

公开(公告)日：2015-11-25

申请号：EP13856650

申请日：2013-11-25

申请人： RICOH CO LTD

发明人： SATO SHUNICHI ,  NISHIYAMA NOBUHIKO

IPC分类号： H01L31/0687 ,  H01L31/18

CPC分类号： H01L31/1836 ,  H01L31/035236 ,  H01L31/043 ,  H01L31/0687 ,  H01L31/06875 ,  H01L31/1804 ,  H01L31/1852 ,  H01L31/1892 ,  Y02E10/544 ,  Y02P70/521

摘要： A photovoltaic cell manufacturing method includes depositing a first buffer layer for performing lattice relaxation on a first silicon substrate; depositing a first photoelectric conversion cell on the first buffer layer, the first photoelectric conversion cell being formed with a compound semiconductor including a pn junction, and the first photoelectric conversion cell having a lattice constant that is higher than that of silicon; connecting a support substrate to the first photoelectric conversion cell to form a first layered body; and removing the first buffer layer and the first silicon substrate from the first layered body.

公开(公告)号：EP2243203A4

公开(公告)日：2015-03-18

申请号：EP09710020

申请日：2009-02-09

申请人： RICOH CO LTD

发明人： JIKUTANI NAOTO ,  SUGAWARA SATORU ,  SATO SHUNICHI

IPC分类号： H01S5/183 ,  B41J2/44 ,  G02B26/10 ,  H04N1/113

CPC分类号： B41J2/45 ,  H01S5/0021 ,  H01S5/18311 ,  H01S5/18344 ,  H01S5/18358 ,  H01S5/423 ,  H01S2301/166 ,  H04N1/113 ,  H04N1/1215

摘要： A surface emitting laser element is disclosed. The surface emitting laser element includes a resonator structural body including an active layer, first and second semiconductor distributed Bragg reflectors which sandwich the resonator structural body, and a confinement structure which can confine an injection current and a lateral mode of oscillation light at the same time by being formed with selective oxidation of a layer to be selectively oxidized containing aluminum in the first semiconductor distributed Bragg reflector. A thickness of the layer to be selectively oxidized is 28 nm, and a temperature when an oscillation threshold current becomes a minimum value is approximately 17° C.