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公开(公告)号：EP3057126A4
公开(公告)日：2017-12-06
申请号：EP14853126
申请日：2014-10-06
申请人： ROHM CO LTD
发明人： YOSHIHARA KATSUHIKO , SAITO MASAO
IPC分类号： H01L23/14 , H01L23/12 , H01L23/36 , H01L23/373 , H01L23/433 , H01L23/49 , H01L23/495 , H01L25/07 , H01L25/18
CPC分类号： H01L23/4924 , H01L21/4871 , H01L21/565 , H01L23/3121 , H01L23/3675 , H01L23/3735 , H01L23/3737 , H01L23/4334 , H01L23/49506 , H01L23/49531 , H01L23/49537 , H01L23/49541 , H01L23/49575 , H01L24/32 , H01L24/45 , H01L24/49 , H01L24/73 , H01L24/83 , H01L24/85 , H01L24/92 , H01L25/07 , H01L25/072 , H01L25/18 , H01L2224/0603 , H01L2224/29387 , H01L2224/32245 , H01L2224/45124 , H01L2224/48091 , H01L2224/48137 , H01L2224/48227 , H01L2224/48245 , H01L2224/48472 , H01L2224/49111 , H01L2224/49113 , H01L2224/49175 , H01L2224/73265 , H01L2224/83801 , H01L2224/92247 , H01L2924/01004 , H01L2924/01005 , H01L2924/01012 , H01L2924/0503 , H01L2924/05032 , H01L2924/05042 , H01L2924/0532 , H01L2924/05342 , H01L2924/05432 , H01L2924/05442 , H01L2924/0635 , H01L2924/0665 , H01L2924/069 , H01L2924/07025 , H01L2924/10253 , H01L2924/10272 , H01L2924/1033 , H01L2924/1203 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/15724 , H01L2924/15747 , H01L2924/181 , H01L2924/19107 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： A power module (20) includes: an insulating layer (12); a first metallic plate (3) disposed on the insulating layer (12); a first semiconductor chip (1) disposed on the first metallic plate (3); a first adhesive insulating layer (10) and a second adhesive insulating layer (11) disposed on the first metallic plate (3) ; a first metallic land (5) for main electrode wiring disposed on the first adhesive insulating layer (10); and a first metallic land (7 1 , 7 2 ) for signal wiring disposed on the second adhesive insulating layer (11). There can be provided a power module having reduced cost, reduced warpage of the whole of a substrate, stabilized quality, and improved reliability; and a fabrication method for such a power module.
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2.发明公开
公开(公告)号：EP3026700A4
公开(公告)日：2017-03-08
申请号：EP14829933
申请日：2014-07-17
申请人： ROHM CO LTD
发明人： YOSHIHARA KATSUHIKO , SAITO MASAO
IPC分类号： H01L23/28 , H01L23/36 , H01L23/373 , H01L23/495 , H01L25/07 , H01L25/18
CPC分类号： H01L23/42 , H01L21/4842 , H01L21/563 , H01L23/28 , H01L23/3107 , H01L23/3135 , H01L23/36 , H01L23/3737 , H01L23/49551 , H01L23/49562 , H01L24/73 , H01L2224/32245 , H01L2224/45124 , H01L2224/48091 , H01L2224/48247 , H01L2224/48472 , H01L2224/73265 , H01L2224/92247 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/181 , H01L2924/00012 , H01L2924/00
摘要： A power module (20) includes: an insulating layer; a leadframe (metal layer) (1, 5) disposed on the insulating layer; a semiconductor chip (3) disposed on the leadframe ; and a mold resin formed so as to cover the semiconductor chip, at least a part of the metal layer, and at least a part of the insulating layer, wherein the insulating layer includes a relatively-soft insulating layer (7a) disposed at a side of the leadframe (1, 5) and a relatively-hard insulating layer (7b) disposed at an opposite side of the leadframes (1, 5). Accordingly, there can be provided the power module with improved cooling capability and improved reliability, and the fabrication method for such a power module.
摘要翻译： 功率模块（20）包括：绝缘层; 设置在绝缘层上的引线框架（金属层）（1，5） 布置在所述引线框架上的半导体芯片（3）; 以及模制树脂，所述模制树脂被形成为覆盖所述半导体芯片，所述金属层的至少一部分以及所述绝缘层的至少一部分，其中所述绝缘层包括布置在所述绝缘层的侧面的相对软的绝缘层（7a） 的引线框架（1,5）和设置在引线框架（1,5）的相对侧的相对硬的绝缘层（7b）。 因此，可以提供具有改进的冷却能力和改进的可靠性的功率模块，以及用于这种功率模块的制造方法。
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公开(公告)号：EP3026701A4
公开(公告)日：2017-03-08
申请号：EP14829390
申请日：2014-07-17
申请人： ROHM CO LTD
发明人： YOSHIHARA KATSUHIKO , SAITO MASAO
IPC分类号： H01L23/495 , H01L23/34
CPC分类号： H01L23/49551 , H01L21/4842 , H01L21/563 , H01L23/3107 , H01L23/3135 , H01L23/36 , H01L23/42 , H01L23/49548 , H01L23/49562 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/48472 , H01L2224/73265 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/00014 , H01L2924/00
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公开(公告)号：EP2432014A4
公开(公告)日：2014-03-05
申请号：EP10774936
申请日：2010-05-12
申请人： ROHM CO LTD
CPC分类号： H01L23/49844 , H01L23/315 , H01L23/3735 , H01L23/49822 , H01L23/645 , H01L24/32 , H01L24/33 , H01L24/34 , H01L24/36 , H01L24/37 , H01L24/40 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/72 , H01L24/73 , H01L25/072 , H01L2223/6611 , H01L2224/291 , H01L2224/29111 , H01L2224/32221 , H01L2224/32225 , H01L2224/37147 , H01L2224/40225 , H01L2224/45014 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48111 , H01L2224/48137 , H01L2224/48227 , H01L2224/49111 , H01L2224/73251 , H01L2224/73265 , H01L2224/83801 , H01L2224/84205 , H01L2224/85205 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01023 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/014 , H01L2924/10253 , H01L2924/10272 , H01L2924/1203 , H01L2924/12032 , H01L2924/12041 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/15747 , H01L2924/181 , H01L2924/2076 , H01L2924/30107 , H01L2924/00014 , H01L2924/00 , H01L2924/3512 , H01L2224/32 , H01L2224/72
摘要： Disclosed is a semiconductor device having a structure capable of reducing the self-inductance of internal wiring. The semiconductor device includes: a lower board having a lower conductor layer formed on the surface thereof; a switching element bonded to the lower conductor layer in an element bonding area; a terminal bonded to the lower conductor layer in a terminal bonding area; an upper board stacked on the lower board in a board bonding area between the element bonding area and the terminal bonding area, and having an upper conductor layer on the surface thereof; and a switching element connecting member which connects the switching element with the upper conductor layer.
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