公开(公告)号：EP3224861B1

公开(公告)日：2018-10-24

申请号：EP15771448.6

申请日：2015-09-18

申请人： Raytheon Company

发明人： REZA, Shahed ,  ALTMAN, David, H. ,  TRULLI, Susan, C.

IPC分类号： H01L23/66 ,  H01L23/36 ,  H01L23/00

CPC分类号： H01L23/66 ,  H01L23/367 ,  H01L23/3731 ,  H01L23/3737 ,  H01L23/42 ,  H01L23/535 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/73 ,  H01L2223/6605 ,  H01L2223/6627 ,  H01L2223/6683 ,  H01L2224/131 ,  H01L2224/14165 ,  H01L2224/16225 ,  H01L2224/16235 ,  H01L2224/27312 ,  H01L2224/29013 ,  H01L2224/29078 ,  H01L2224/2929 ,  H01L2224/29339 ,  H01L2224/29387 ,  H01L2224/32225 ,  H01L2224/33181 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2924/10272 ,  H01L2924/1033 ,  H01L2924/1423 ,  H01L2924/15313 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/0503 ,  H01L2924/01005 ,  H01L2924/05032 ,  H01L2924/00014 ,  H01L2924/00

摘要： A monolithic microwave integrated circuit structure having: a semiconductor substrate structure having a plurality of active devices and a microwave transmission line having an input section, an output section and a interconnecting section electrically interconnecting the active devices on one surface of the substrate; a thermally conductive, electrically non-conductive heat sink; and a thermally conductive bonding layer for bonding the heat sink to the substrate, the thermally conductive bonding layer having an electrically conductive portion and an electrically non-conductive portion, the electrically conductive portion being disposed between the heat sink and an opposite surface of a portion of the substrate having the active devices and the electrically non-conductive portion being disposed on the opposite surface portion overlaying portion of the microwave transmission line section.

公开(公告)号：EP4004968A1

公开(公告)日：2022-06-01

申请号：EP20751804.4

申请日：2020-06-16

申请人： Raytheon Company

发明人： ALTMAN, David, H. ,  TRULLI, Susan, C. ,  BAR-COHEN, Avram

IPC分类号： H01L21/48 ,  H01L23/367 ,  H01L23/373 ,  H01L23/42

公开(公告)号：EP2462613A1

公开(公告)日：2012-06-13

申请号：EP10747540.2

申请日：2010-07-28

申请人： Raytheon Company

发明人： ALTMAN, David, H. ,  NORDHAUSEN, Erik, F. ,  BERNSTEIN, Steven, D. ,  MOLFINO, Robert, P. ,  WAKEFIELD, Steven, B.

IPC分类号： H01L23/373 ,  H01L23/433

CPC分类号： H01L23/373 ,  H01L23/3733 ,  H01L23/3737 ,  H01L23/433 ,  H01L2924/0002 ,  Y10S977/72 ,  Y10S977/742 ,  Y10S977/762 ,  Y10S977/832 ,  Y10T428/25 ,  Y10T428/2918 ,  Y10T428/2938 ,  Y10T428/2958 ,  H01L2924/00

摘要： A structure, comprising: a semiconductor structure having an electrically and thermally conductive layer disposed on one surface of the semiconductor structure; an electrically and thermally conductive heat sink; an electrically and thermally conductive carrier layer; a plurality of electrically and thermally nano-tubes, a first portion of the plurality of nano-tubes having proximal ends disposed on a first surface of the carrier layer and a second portion of the plurality of nano-tubes having proximal ends disposed on an opposite surface of the carrier layer; and a plurality of electrically and thermally conductive heat conductive tips disposed on distal ends of the plurality of nano-tubes, the heat conductive tips on the first portion of the plurality of nano-tubes being attached to the conductive layer, the of heat conductive tips on the second portion of the plurality of nano-tubes being attached to the heat sink.

公开(公告)号：EP3224861A1

公开(公告)日：2017-10-04

申请号：EP15771448.6

申请日：2015-09-18

申请人： Raytheon Company

发明人： REZA, Shahed ,  ALTMAN, David, H. ,  TRULLI, Susan, C.

IPC分类号： H01L23/66 ,  H01L23/36 ,  H01L23/00

CPC分类号： H01L24/29 ,  H01L23/3731 ,  H01L23/3737 ,  H01L23/42 ,  H01L23/66 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/27 ,  H01L24/32 ,  H01L24/33 ,  H01L24/73 ,  H01L2223/6627 ,  H01L2223/6683 ,  H01L2224/131 ,  H01L2224/14165 ,  H01L2224/16225 ,  H01L2224/16235 ,  H01L2224/27312 ,  H01L2224/29013 ,  H01L2224/29078 ,  H01L2224/2929 ,  H01L2224/29339 ,  H01L2224/29387 ,  H01L2224/32225 ,  H01L2224/33181 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2924/10272 ,  H01L2924/1033 ,  H01L2924/1423 ,  H01L2924/15313 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/0503 ,  H01L2924/01005 ,  H01L2924/05032 ,  H01L2924/00014 ,  H01L2924/00

摘要： A monolithic microwave integrated circuit structure having: a semiconductor substrate structure having a plurality of active devices and a microwave transmission line having an input section, an output section and a interconnecting section electrically interconnecting the active devices on one surface of the substrate; a thermally conductive, electrically non-conductive heat sink; and a thermally conductive bonding layer for bonding the heat sink to the substrate, the thermally conductive bonding layer having an electrically conductive portion and an electrically non-conductive portion, the electrically conductive portion being disposed between the heat sink and an opposite surface of a portion of the substrate having the active devices and the electrically non-conductive portion being disposed on the opposite surface portion overlaying portion of the microwave transmission line section.

摘要翻译： 一种单片微波集成电路结构，具有：具有多个有源器件的半导体衬底结构和具有输入部分，输出部分和互连部分的微波传输线，所述输入部分和互连部分在所述衬底的一个表面上电相互连接所述有源器件; 导热的，不导电的散热器; 以及用于将所述散热器结合到所述衬底的导热结合层，所述导热结合层具有导电部分和不导电部分，所述导电部分设置在所述散热器和部分的相对表面之间 具有有源器件的基板和非导电部分设置在微波传输线部分的相对表面部分重叠部分上。

公开(公告)号：EP2462613B1

公开(公告)日：2016-03-16

申请号：EP10747540.2

申请日：2010-07-28

申请人： Raytheon Company

发明人： ALTMAN, David, H. ,  NORDHAUSEN, Erik, F. ,  BERNSTEIN, Steven, D. ,  MOLFINO, Robert, P. ,  WAKEFIELD, Steven, B.

IPC分类号： H01L23/373 ,  H01L23/433

CPC分类号： H01L23/373 ,  H01L23/3733 ,  H01L23/3737 ,  H01L23/433 ,  H01L2924/0002 ,  Y10S977/72 ,  Y10S977/742 ,  Y10S977/762 ,  Y10S977/832 ,  Y10T428/25 ,  Y10T428/2918 ,  Y10T428/2938 ,  Y10T428/2958 ,  H01L2924/00