INFRAROT-SENSORVORRICHTUNG UND VERFAHREN ZUR HERSTELLUNG EINER INFRAROT-SENSORVORRICHTUNG

    公开(公告)号:EP2850659A1

    公开(公告)日:2015-03-25

    申请号:EP13718171.5

    申请日:2013-04-19

    申请人: Robert Bosch GmbH

    IPC分类号: H01L27/146 G01J5/20

    摘要: The invention relates to an infrared sensor device (100; 200; 300), comprising a semiconductor substrate (1), at least one sensor element (2) micromechanically formed in the semiconductor substrate (1), and at least one calibration element (3), micromechanically formed in the semiconductor substrate (1), for the sensor element (2), wherein absorber material (6) is arranged on the semiconductor substrate (1) in the area of the sensor element (2) and the calibration element (3), wherein one cavern (8) each is formed in the semiconductor substrate (1) substantially below the sensor element (2) and substantially below the calibration element (3), wherein the sensor element (2) and the calibration element (3) are thermally and electrically isolated from the rest of the semiconductor substrate (1) by means of the caverns (8). High sensitivity, calibration functionality for the sensor element, and a high signal-to-noise ratio are thereby achieved for the infrared sensor device.

    摘要翻译: 本发明涉及一种红外传感器装置(100; 200; 300),其包括半导体衬底(1),微机械地形成在半导体衬底(1)中的至少一个传感器元件(2),以及至少一个校准元件 ),所述传感器元件(2)在所述半导体衬底(1)中微机械地形成,其中吸收材料(6)在所述传感器元件(2)的区域中布置在所述半导体衬底(1)上,并且所述校准元件 其特征在于,所述传感器元件(2)和所述校准元件(3)各自形成在所述半导体基板(1)中的大体在所述传感器元件(2)下方并且基本位于所述校准元件(3)下方的洞穴(8) )通过洞穴(8)与半导体衬底(1)的其余部分热和电隔离。 由此实现了红外传感器装置的高灵敏度,传感器元件的校准功能以及高信噪比。