RESISTIVE MEMS HUMIDITY SENSOR
    3.
    发明公开
    RESISTIVE MEMS HUMIDITY SENSOR 审中-公开
    电阻式微机电传感器

    公开(公告)号:EP2984474A1

    公开(公告)日:2016-02-17

    申请号:EP13821548.8

    申请日:2013-12-17

    IPC分类号: G01N27/12

    CPC分类号: G01N27/121

    摘要: A semiconductor device includes a substrate, an insulating film provided on a surface of the substrate, and a sensing film formed of a conductive material deposited on top of the insulating film. The sensing film defines at least one conductive path between a first position and a second position on the insulating film. A first circuit connection is electrically connected to the sensing film at the first position on the insulating layer, and a second circuit connection is electrically connected to the sensing film at the second position. A control circuit is operatively connected to the first circuit connection and the second circuit connection for measuring an electrical resistance of the sensing film. The sensing film has a thickness that enables a resistivity of the sensing film to be altered predictably in a manner that is dependent on ambient moisture content.

    摘要翻译: 半导体器件包括衬底,设置在衬底的表面上的绝缘膜和由沉积在绝缘膜的顶部上的导电材料形成的感测膜。 感测膜限定绝缘膜上的第一位置和第二位置之间的至少一个导电路径。 第一电路连接在绝缘层上的第一位置电连接到感测膜,并且第二电路连接在第二位置电连接到感测膜。 控制电路可操作地连接到第一电路连接和用于测量感测膜的电阻的第二电路连接。 感测膜具有能够以取决于环境水分含量的方式预测地改变感测膜的电阻率的厚度。

    METAMATERIAL AND METHOD FOR FORMING A METAMATERIAL USING ATOMIC LAYER DEPOSITION
    4.
    发明公开
    METAMATERIAL AND METHOD FOR FORMING A METAMATERIAL USING ATOMIC LAYER DEPOSITION 审中-公开
    METAMATERIAL UND VERFAHREN ZUR HERSTELLUNG EINES METAMATERIALS MITTELS ATOMLAGENABSCHEIDUNG

    公开(公告)号:EP2971229A1

    公开(公告)日:2016-01-20

    申请号:EP14770096.7

    申请日:2014-03-08

    IPC分类号: C23C16/44 C23C16/448

    摘要: A metamaterial includes a first continuous layer formed with a first material by atomic layer deposition (ALD), a first non-continuous layer formed with a second material by ALD on first upper surface portions of a first upper surface of the first continuous layer, and a second continuous layer formed with the first material by ALD on second upper surface portions of the first upper surface of the first continuous layer and on a second upper surface of the first non-continuous layer.

    摘要翻译: 超材料包括通过原子层沉积(ALD)形成的第一材料的第一连续层,在第一连续层的第一上表面的第一上表面上由ALD形成的第二材料的第一非连续层,以及 在所述第一连续层的第一上表面的第二上表面部分上以及在所述第一非连续层的第二上表面上由所述第一材料形成的第二连续层。

    PORTABLE DEVICE WITH TEMPERATURE SENSING
    6.
    发明公开
    PORTABLE DEVICE WITH TEMPERATURE SENSING 审中-公开
    具有温度便携式设备

    公开(公告)号:EP2974046A1

    公开(公告)日:2016-01-20

    申请号:EP14769253.7

    申请日:2014-03-07

    IPC分类号: H04B1/40

    摘要: A hand-held device having a housing and a processor disposed within the housing, includes a camera and a temperature sensing element having an adjustable field of view. The camera is configured to generate an image of an object and to permit the user to frame the image at a portion of the object to determine the temperature of the framed portion. The temperature sensing element includes a plurality of temperature sensors and the processor is configured to select ones of the plurality of sensors to produce a field of view (FOV) of the temperature sensing element that is less than or equal to the frame in the image. The selected sensors are activated to generate signals corresponding to the temperature of the object in the FOV and the processor is configured to determine a sensed temperature based on the sensor signals.

    EPI-POLY ETCH STOP FOR OUT OF PLANE SPACER DEFINED ELECTRODE
    9.
    发明公开
    EPI-POLY ETCH STOP FOR OUT OF PLANE SPACER DEFINED ELECTRODE 审中-公开
    EPI-POLY-刻蚀阻挡层关于外部ABSTANDSHALTER定义电极

    公开(公告)号:EP2973665A1

    公开(公告)日:2016-01-20

    申请号:EP14770043.9

    申请日:2014-03-08

    IPC分类号: H01L21/28

    摘要: In one embodiment, a method of forming an out-of-plane electrode includes forming an oxide layer above an upper surface of a device layer, etching an etch stop perimeter defining trench extending through the oxide layer, forming a first cap layer portion on an upper surface of the oxide layer and within the etch stop perimeter defining trench, etching a first electrode perimeter defining trench extending through the first cap layer portion and stopping at the oxide layer, depositing a first material portion within the first electrode perimeter defining trench, depositing a second cap layer portion above the deposited first material portion, and vapor releasing a portion of the oxide layer with the etch stop portion providing a lateral etch stop.

    STRUCTURED GAP FOR A MEMS PRESSURE SENSOR
    10.
    发明公开
    STRUCTURED GAP FOR A MEMS PRESSURE SENSOR 审中-公开
    STRUKTURIERTER SPALTFÜRMEMS-DRUCKSENSOR

    公开(公告)号:EP2943766A1

    公开(公告)日:2015-11-18

    申请号:EP13814296.3

    申请日:2013-12-02

    IPC分类号: G01L9/00 B81C1/00

    摘要: A method of fabricating a pressure sensor includes performing a chemical vapor deposition (CVD) process to deposit a first sacrificial layer having a first thickness onto a substrate. A portion of the first sacrificial layer is then removed down to the substrate to form a central region of bare silicon. One of a thermal oxidation process and an atomic layer deposition process is then performed to form a second sacrificial layer on the substrate having a second thickness in the central region that is less than the first thickness. A cap layer is then deposited over the first and second sacrificial layers. The second sacrificial layer is removed from the central region, and the first and second sacrificial layers are removed from a perimeter region that at least partially surrounds the central region on the substrate to form a contiguous, structured gap between the cap layer and the substrate, the structured gap having a first width in the central region and a second width in the perimeter region with the second width being greater than the first width.

    摘要翻译: 制造压力传感器的方法包括执行化学气相沉积(CVD)工艺以将具有第一厚度的第一牺牲层沉积到衬底上。 然后将第一牺牲层的一部分向下移动到衬底以形成裸硅的中心区域。 然后执行热氧化工艺和原子层沉积工艺之一,以在衬底上形成第二牺牲层,其中心区域的第二厚度小于第一厚度。 然后在第一和第二牺牲层上沉积覆盖层。 从中心区域去除第二牺牲层,并且从周边区域移除第一和第二牺牲层,周边区域至少部分地围绕衬底上的中心区域,以在盖层和衬底之间形成连续的,结构化的间隙, 所述结构化间隙在所述中心区域具有第一宽度,并且所述周边区域中的第二宽度具有大于所述第一宽度的所述第二宽度。