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公开(公告)号：EP1415321A1
公开(公告)日：2004-05-06
申请号：EP02767344.1
申请日：2002-08-07
发明人： BEHLE, Stephan , BEWIG, Lars , KÜPPER, Thomas , MARING, Wolfram , MÖLLE, Christoph , WALTHER, Marten
IPC分类号： H01J37/32
CPC分类号： H01J37/32229 , C23C16/511 , H01J37/32192
摘要： The invention relates to a device for the coating of objects. Said invention is characterised by the following features: a single microwave source, two or more coating chambers, all coating chambers are connected to the single microwave source and an impedance structure or a hollow guide structure is provided for distribution of the microwave energy for generation of the plasma in the individual chambers.
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公开(公告)号：EP1264002A1
公开(公告)日：2002-12-11
申请号：EP01951109.6
申请日：2001-01-27
发明人： BAUCH, Hartmut , BEWIG, Lars , KLIPPE, Lutz , KÜPPER, Thomas
IPC分类号： C23C16/455 , C23C16/448
CPC分类号： C23C16/448
摘要： The invention relates to a gas supply device for delivering precursors with a low vapor pressure to CVD coating systems. Said gas supply device has a supply container for the precursor which is at a first temperature T1, an intermediate storage device for intermediately storing the vaporous precursor at a second temperature T2 and at a constant pressure p2, a first gas line between the supply container and the intermediate storage device and a second gas line for removing gas from the intermediate storage device. According to the invention, the gas supply device is developed in such a way that the first temperature T1 is higher than the second temperature T2. The lower temperature T2 of the intermediate storage device facilitates maintenance work on the same, while the precursor evaporates at a greater rate at the higher temperature T1 in the supply container. According to a particularly advantageous embodiment, a first precursor vapor is mixed with a gas and/or a second precursor vapor in the intermediate storage device. The partial pressure of the first precursor vapor in the intermediate storage device is lower than that of the undiluted first precursor vapor at a constant overall pressure in said intermediate storage device, so that the temperature T2 of the intermediate storage device and the successive lines can be reduced. Reducing the temperature T2 allows less expensive components to be used.
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3.发明公开PLASMA-CVD-ANLAGE MIT EINEM ARRAY VON MIKROWELLEN-PLASMAELEKTRODEN UND PLASMA-CVD-VERFAHREN 失效微波等离子电极和等离子体CVD法的数组等离子体CVD系统
公开(公告)号：EP0922122A1
公开(公告)日：1999-06-16
申请号：EP97940121.0
申请日：1997-08-23
发明人： WALTHER, Marten , MÖHL, Wolfgang , DANIELZIK, Burkhard , KUHR, Markus , HOCHHAUS, Roland , BAUCH, Hartmut , HEMING, Martin , KÜPPER, Thomas , BEWIG, Lars
CPC分类号： H01J37/32192 , C23C16/402 , C23C16/511 , C23C16/545
摘要： The invention concerns a plasma CVD system (in particular a plasma pulse CVD system) with an array of microwave plasma electrodes (2a, b, c, d). According to the invention, in order to improve the homogeneity of the layer, interference is prevented by controlling adjacent plasma electrodes (2a, 2b; 2b, 2c; 2c, 2d) in a chronologically offset manner. To that end, micropulses (A, B) are provided within the macropulses of the plasma pulse CVD process. Additionally, the uniformity of the layer deposition at the interfaces between adjacent modules can be optimized by radio-frequency excitation by means of suitable electrodes (6, 62a-c), magnetic fields or the configuration of the gas inlets (5). The surface coated in an operating cycle can thus be scaled as required.
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公开(公告)号：EP1417042A2
公开(公告)日：2004-05-12
申请号：EP02748647.1
申请日：2002-03-28
发明人： KUHR, Markus , WOLFF, Detlef , WALTHER, Marten , BEHLE, Stephan , BAUER, Stefan , KLIPPE, Lutz , MOELLE, Christoph , BEWIG, Lars , KOPPE, Frank , KÜPPER, Thomas , MARING, Wolfram , HEINZ, Jochen;
IPC分类号： B05D7/24
CPC分类号： G02B1/111 , B05D1/62 , B05D7/02 , B05D7/52 , C23C16/029 , C23C16/515 , G02B1/10
摘要： The invention relates to the coating of a synthetic substrate for producing a coated body, a device for carrying out such a method and the use thereof.
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5.发明授权PLASMA-CVD-ANLAGE MIT EINEM ARRAY VON MIKROWELLEN-PLASMAELEKTRODEN UND PLASMA-CVD-VERFAHREN 失效微波等离子电极和等离子体CVD法的数组等离子体CVD系统
公开(公告)号：EP0922122B1
公开(公告)日：2003-03-12
申请号：EP97940121.3
申请日：1997-08-23
发明人： WALTHER, Marten , MÖHL, Wolfgang , DANIELZIK, Burkhard , KUHR, Markus , HOCHHAUS, Roland , BAUCH, Hartmut , HEMING, Martin , KÜPPER, Thomas , BEWIG, Lars
IPC分类号： C23C16/52
CPC分类号： H01J37/32192 , C23C16/402 , C23C16/511 , C23C16/545
摘要： The invention concerns a plasma CVD system (in particular a plasma pulse CVD system) with an array of microwave plasma electrodes (2a, b, c, d). According to the invention, in order to improve the homogeneity of the layer, interference is prevented by controlling adjacent plasma electrodes (2a, 2b; 2b, 2c; 2c, 2d) in a chronologically offset manner. To that end, micropulses (A, B) are provided within the macropulses of the plasma pulse CVD process. Additionally, the uniformity of the layer deposition at the interfaces between adjacent modules can be optimized by radio-frequency excitation by means of suitable electrodes (6, 62a-c), magnetic fields or the configuration of the gas inlets (5). The surface coated in an operating cycle can thus be scaled as required.
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公开(公告)号：EP1472195A1
公开(公告)日：2004-11-03
申请号：EP03704480.7
申请日：2003-01-28
CPC分类号： C03C17/3417 , H01J61/35
摘要： In order to improve the energy balance of an HID lamp, the quartz burner, preferably the inside thereof, is coated with a UV reflecting layer system by alternatingly applying amorphous thin layers made at least of titanium oxide and silicon oxide having the respective general stoichiometry TiOy and SiOx by means of a plasma impulse chemical vapor deposition (PICVD) method at a high power density and increased substrate temperatures ranging from 100° to 400° C, using small growth rates ranging from 1 nm/sec to 100 nm/sec so as to form an interference layer system having a thickness of less than 1200 nm and a minimized UV-active defective spot rate ranging from 0.1 to 1 percent.
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