公开(公告)号：EP2242105B1

公开(公告)日：2016-12-21

申请号：EP10159501.5

申请日：2010-04-09

申请人： SiliconFile Technologies Inc.

发明人： Jeon, In Gyun ,  Oh, Se Jung ,  Ahn, Heui Gyun ,  Won, Jun Ho

IPC分类号： H01L27/146

CPC分类号： H01L27/14627 ,  H01L27/14621 ,  H01L27/14632 ,  H01L27/14643 ,  H01L27/14685 ,  H01L27/14687

公开(公告)号：EP2733736A2

公开(公告)日：2014-05-21

申请号：EP13005391.1

申请日：2013-11-15

申请人： Siliconfile Technologies Inc.

发明人： Jeon, In Gyun

IPC分类号： H01L23/00 ,  H01L23/48

CPC分类号： H01L25/50 ,  H01L21/76802 ,  H01L21/76898 ,  H01L21/8221 ,  H01L23/481 ,  H01L24/06 ,  H01L24/07 ,  H01L24/08 ,  H01L24/80 ,  H01L24/82 ,  H01L24/92 ,  H01L27/14612 ,  H01L27/14632 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/14687 ,  H01L27/1469 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/05647 ,  H01L2224/05686 ,  H01L2224/06051 ,  H01L2224/06505 ,  H01L2224/06517 ,  H01L2224/08146 ,  H01L2224/08147 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2224/82031 ,  H01L2224/821 ,  H01L2224/9202 ,  H01L2224/9212 ,  H01L2924/00014 ,  H01L2924/12043 ,  H01L2224/82 ,  H01L2924/00012 ,  H01L2924/053 ,  H01L2224/05552 ,  H01L2924/00

摘要： The present invention relates to a method for electrically connecting wafers, which physically bonds two wafers through an oxide-to-oxide bonding method and then electrically connects the two wafers through a butting contact structure. The wafers are physically bonded to each other through a relatively simple method, and then electrically connected to through TSVs or butting contact holes. Therefore, since the fabrication process may be simplified, a process error may be reduced, and the product yield may be improved.

摘要翻译： 本发明涉及到用于电连接晶片的方法，其中物理地通过到氧化物到氧化物接合方法粘合两个晶片，然后电通过对接接触结构的两个晶片相连接。 晶片被物理地通过相对简单的方法彼此结合，然后电连接到通过硅通孔或对接接触孔。 因此，由于制造工艺可以被简化，加工误差可能会降低，产品的成品率可以得到改善。

公开(公告)号：EP2242105A3

公开(公告)日：2012-04-18

申请号：EP10159501.5

申请日：2010-04-09

申请人： SiliconFile Technologies Inc.

发明人： Jeon, In Gyun ,  Oh, Se Jung ,  Ahn, Heui Gyun ,  Won, Jun Ho

IPC分类号： H01L27/146

CPC分类号： H01L27/14627 ,  H01L27/14621 ,  H01L27/14632 ,  H01L27/14643 ,  H01L27/14685 ,  H01L27/14687

摘要： An image sensor (200) having a wave guide (29) includes a semiconductor substrate (20) formed with a photodiode (21) and a peripheral circuit region; an anti-reflective layer (22) formed on the semiconductor substrate; an insulation layer (22-1) formed on the anti-reflective layer; a wiring layer (25) formed on the insulation layer and connected to the semiconductor substrate; at least one interlayer dielectric (26) stacked on the wiring layer; and a wave guide connected to the insulation layer by passing through the interlayer dielectric and the wiring layer which are formed over the photodiode.

公开(公告)号：EP2242105A2

公开(公告)日：2010-10-20

申请号：EP10159501.5

申请日：2010-04-09

申请人： SiliconFile Technologies Inc.

发明人： Jeon, In Gyun ,  Oh, Se Jung ,  Ahn, Heui Gyun ,  Won, Jun Ho

IPC分类号： H01L27/146

CPC分类号： H01L27/14627 ,  H01L27/14621 ,  H01L27/14632 ,  H01L27/14643 ,  H01L27/14685 ,  H01L27/14687

摘要： An image sensor (200) having a wave guide (29) includes a semiconductor substrate (20) formed with a photodiode (21) and a peripheral circuit region; an anti-reflective layer (22) formed on the semiconductor substrate; an insulation layer (22-1) formed on the anti-reflective layer; a wiring layer (25) formed on the insulation layer and connected to the semiconductor substrate; at least one interlayer dielectric (26) stacked on the wiring layer; and a wave guide connected to the insulation layer by passing through the interlayer dielectric and the wiring layer which are formed over the photodiode.

摘要翻译： 具有波导管（29）的图像传感器（200）包括形成有光电二极管（21）和外围电路区域的半导体基板（20） 形成在半导体衬底上的抗反射层（22）; 形成在所述抗反射层上的绝缘层（22-1） 形成在所述绝缘层上并连接到所述半导体衬底的布线层（25） 层叠在所述布线层上的至少一层层间电介质（26） 以及通过穿过形成在光电二极管上的层间电介质和布线层与绝缘层连接的波导。