公开(公告)号：EP1376668A4

公开(公告)日：2006-02-15

申请号：EP02707230

申请日：2002-03-28

申请人： TOKYO ELECTRON LTD ,  OHMI TADAHIRO

发明人： OHMI TADAHIRO ,  HIRAYAMA M ,  SUGAWA S ,  GOTO T

IPC分类号： H05H1/46 ,  B01J19/08 ,  C23C16/511 ,  C23C16/517 ,  H01J37/32 ,  H01L21/205 ,  H01L21/265 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/31

CPC分类号： H01J37/32192 ,  C23C16/517 ,  H01J37/32009 ,  H01J37/32339

摘要： A microwave plasma process device (10) is provided with a plasma ignition enhancing means for enhancing plasma ignition by microwaves. The plasma ignition enhancing means comprises a deuterium lamp (30) which generates vacuum ultraviolet rays, and a penetration window (32) guiding the vacuum ultraviolet rays, which have penetrated the same, to a plasma excitation space (26). The penetration window (32) is constructed as a convex lens, focusing the vacuum ultraviolet rays to enhance the ionization of the plasma excitation gas. Such arrangement makes it possible to effect plasma ignition easily and rapidly.

摘要翻译： 公开了一种微波等离子体处理装置，其能够在等离子体处理的压力下实现快速和容易的等离子体点火。 在微波等离子体处理装置中，提供等离子体点火促进单元以便于由微波引起的等离子体点火。 等离子体点火促进单元包括发射真空紫外线的氘灯和允许真空紫外线穿透和照射等离子体激发空间的透射窗口。 传输窗是凸透镜，聚焦真空紫外线以增强等离子体激发气体的离子化。 通过这样的结构，可以容易且快速地引起等离子体点火。

公开(公告)号：EP1300875A4

公开(公告)日：2006-12-20

申请号：EP02707228

申请日：2002-03-28

申请人： OHMI TADAHIRO ,  TOKYO ELECTRON LTD

发明人： OHMI TADAHIRO ,  HIRAYAMA MASAKI ,  SUGAWA SHIGETOSHI ,  GOTO T ,  HONGOH TOSHIAKI

IPC分类号： H01J37/32 ,  H05H1/46 ,  C23C16/50 ,  C23C16/511 ,  C23F4/00 ,  C30B25/10 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/31

CPC分类号： H01J37/3222 ,  H01J37/32192 ,  H01J37/3244

摘要： A micro wave plasma processing device having a radial line slot antenna capable of suppressing an abnormal discharge to increase the exciting efficiency of micro wave plasma, wherein the tip part of a power supply line in a coaxial wave guide is separated from a slot plate forming a radiating surface at a connection part between the radial line slot antenna and the coaxial wave guide.

公开(公告)号：EP1403913A4

公开(公告)日：2006-02-08

申请号：EP02743801

申请日：2002-07-03

申请人： OHMI TADAHIRO ,  TOKYO ELECTRON LTD

发明人： OHMI TADAHIRO ,  SUGAWA SHIGETOSHI ,  HIRAYAMA M ,  GOTO T

IPC分类号： H01L21/324 ,  H01L21/00 ,  H01L21/30 ,  H01L21/32 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L29/786

CPC分类号： H01L21/67115 ,  H01L21/3003 ,  H01L21/324 ,  H01L21/67098 ,  H01L21/67109 ,  H01L27/1214 ,  H01L29/66757 ,  H01L29/78603

摘要： A substrate processing apparatus has a processing space provided with a holding stand for holding a substrate to be processed. A hydrogen catalyzing member is arranged in the processing space to face the substrate and for decomposing hydrogen molecules into hydrogen radicals H*. A gas feeding port is arranged in the processing space on an opposite side of the hydrogen catalyzing member to the substrate for feeding a processing gas including at least hydrogen gas. An interval between the hydrogen catalyzing member and the substrate on the holding stand is set less than the distance that the hydrogen radicals H* can reach.

摘要翻译： 基板处理装置具有设置有用于保持待处理基板的保持台的处理空间。 在处理空间中配置氢催化构件以面对衬底，并将氢分子分解成氢自由基H *。 气体供给口设置在氢催化构件的与基板相反的一侧上的处理空间中，用于供给至少包含氢气的处理气体。 氢催化构件与保持架上的基板之间的间隔被设定为小于氢根H *可达到的距离。

公开(公告)号：EP1300878A4

公开(公告)日：2004-08-25

申请号：EP02708714

申请日：2002-03-28

申请人： OHMI TADAHIRO ,  TOKYO ELECTRON LTD

发明人： OHMI TADAHIRO ,  HIRAYAMA M ,  SUGAWA S ,  GOTO T

IPC分类号： H05H1/46 ,  B01J19/08 ,  C23C16/511 ,  H01J37/32 ,  H01L21/302 ,  H01L21/31 ,  H01L21/3065

CPC分类号： H01J37/32211 ,  H01J37/32192

摘要： A micro wave plasma processing device using a radial line slot antenna, wherein a slot plate (16) is formed with a material having a coefficient of thermal expansion near the coefficient of thermal expansion of a slow-wave plate (18) or by depositing a metal on a dielectric plate forming the slow-wave plate (18), and an adhesion between the slow-wave plate and the slot plate forming a micro wave radiation surface in the antenna is increased to prevent an abnormal discharge.