摘要:
An immersion exposure process, particularly, an immersion exposure process which improves resist pattern resolution by performing exposure under the conditions where a liquid, which has a refraction index higher than that of air but lower than that of a resist film and has a prescribed thickness, is provided at least on the resist film, in a path wherein lithography exposure beams reach the resist film. In the immersion exposure process, a quality change of the resist film during the immersion exposure using various types of immersion liquid such as water and a quality change of the immersion liquid used are prevented at the same time, without increasing the number of process steps, and the high resolution resist pattern can be formed. The protecting film having characteristics of substantially not having compatibility with water and soluble to alkalies is formed on a surface of the resist film to be used.
摘要:
An immersion liquid for immersion exposure process wherein a resist film is exposed through a liquid is disclosed. The immersion liquid is composed of a fluorine-containing liquid that is transparent to the exposure light used for the exposure process and has a boiling point of 70-270˚C. A resist pattern forming method which comprises a step wherein such an immersion liquid is directly placed on a resist film or a protective film is also disclosed. The immersion liquid prevents changes of properties in both of the resist film and the liquid during the immersion exposure process, thereby enabling to form a high-resolution resist pattern through immersion exposure.
摘要:
A polymer compound that, within a chemically amplified positive resist system, exhibits a significant change in alkali solubility from a state prior to exposure to that following exposure, as well as a photoresist composition that includes such a polymer compound and a method for forming a resist pattern, which are capable of forming fine patterns with a high level of resolution. The polymer compound includes, as an alkali-soluble group (i), a substituent group in which a group selected from amongst alcoholic hydroxyl groups, carboxyl groups, and phenolic hydroxyl groups is protected with an acid dissociable, dissolution inhibiting group (ii) represented by a general formula (1) shown below: (wherein, A represents an organic group of 1 to 20 carbon atoms with a valency of at least n+1, and n represents an integer from 1 to 4).
摘要:
In a liquid immersion exposure process, it is intended to realize formation of a high-resolution resist pattern by the use of liquid immersion exposure without causing any increase of the number of treatment steps while simultaneously preventing the deterioration of resist film during liquid immersion exposure using various immersion liquids, such as water, and the deterioration of immersion liquid used. Further, ensuring applicability to a liquid immersion medium of higher refractive index, simultaneous employment with such a liquid immersion medium of higher refractive index would realize higher enhancement of pattern precision. A protection film is formed on the surface of employed resist film with the use of a composition comprising an acrylic resin component with the properties of having substantially no compatibility with a liquid for resist film immersion, especially water, and being soluble in alkali.
摘要:
An immersion exposure process-use resist protection film forming material formed on a resist film, the material having characteristics of being transparent to an exposure light, having practically no miscibility with an immersion exposure-use liquid and causing no mixing with the resist film; a protection film formed by this material; a composite film having the resist film; and a resist pattern forming method using them. These can prevent the degeneration of a resist film during immersion exposing and the degeneration of a liquid being used at the same time, and can form a high-resolution resist pattern using immersion exposing.