公开(公告)号：EP3379567A1

公开(公告)日：2018-09-26

申请号：EP18170707.6

申请日：2013-03-01

Applicant: Veeco Instruments Inc.

Inventor： KRISHNAN, Sandeep ,  MOY, Keng ,  GURARY, Alexander ,  KING, Matthew ,  BOGUSLAVSKIY, Vadim ,  KROMMENHOEK, Steven

IPC: H01L21/67 ,  H01L21/687 ,  C23C16/46 ,  C23C16/458

CPC classification number: C23C16/4584 ,  C23C16/4586 ,  C23C16/46 ,  H01L21/6719 ,  H01L21/68764 ,  H01L21/68771 ,  H01L21/68792

Abstract: In one aspect, the present invention provides a structure for a chemical vapor deposition reactor which includes a reaction chamber having an interior and a spindle mounted in the reaction chamber. The spindle has a shaft extending along a vertical rotational axis, the shaft having a top end, a tapered portion extending downwardly from the top end, and a main portion below the tapered portion. The tapered portion defines a tapered contact surface extending around the rotational axis and having progressively increasing diameter in the downward direction away from the top end. The structure further comprises a key projecting outwardly from the main portion of the shaft along a first transverse axis transverse to the vertical rotational axis.

公开(公告)号：EP3311396A1

公开(公告)日：2018-04-25

申请号：EP16815048.0

申请日：2016-06-10

Applicant: Veeco Instruments Inc.

Inventor： KRISHNAN, Sandeep ,  GURARY, Alexander ,  CHANG, Chenghung Paul ,  MARCELO, Earl

IPC: H01L21/205 ,  H01L21/68 ,  H01L21/677 ,  H01L21/02

CPC classification number: H01L21/68785 ,  C23C16/4584 ,  C23C16/4585 ,  H01L21/68735 ,  H01L21/68792

Abstract: A self-centering wafer carrier system for a chemical vapor deposition (CVD) reactor includes a wafer carrier comprising an edge. The wafer carrier at least partially supports a wafer for CVD processing. A rotating tube comprises an edge that supports the wafer carrier during processing. An edge geometry of the wafer carrier and an edge geometry of the rotating tube being chosen to provide a coincident alignment of a central axis of the wafer carrier and a rotation axis of the rotating tube during process at a desired process temperature.

公开(公告)号：EP1358368B1

公开(公告)日：2016-04-13

申请号：EP01964250.3

申请日：2001-08-21

Applicant: Veeco Instruments Inc.

Inventor： BOGUSLAVSKIY, Vadim ,  GURARY, Alexander

IPC: C30B25/02 ,  C30B25/08 ,  C30B25/12 ,  C30B25/14 ,  C23C16/458 ,  C23C16/46 ,  H01L21/687

CPC classification number: H01L21/68764 ,  C23C16/4584 ,  C23C16/46 ,  C30B25/12 ,  H01L21/68771 ,  H01L21/68785 ,  H01L21/68792 ,  Y10S117/90 ,  Y10T117/10

公开(公告)号：EP3005410A1

公开(公告)日：2016-04-13

申请号：EP14808089.8

申请日：2014-06-05

Applicant: Veeco Instruments Inc.

Inventor： ARMOUR, Eric ,  KRISHNAN, Sandeep ,  ZHANG, Alex ,  MITROVIC, Bojan ,  GURARY, Alexander

IPC: H01L21/205 ,  H01L21/324

CPC classification number: C30B25/12 ,  C23C16/4584 ,  C23C16/4586 ,  C23C16/46 ,  C30B25/105 ,  Y10T29/49826

Abstract: A wafer carrier assembly for use in a system for growing epitaxial layers on one or more wafers by chemical vapor deposition (CVD), the wafer carrier assembly includes a wafer carrier body formed symmetrically about a central axis, and including a generally planar top surface that is situated perpendicularly to the central axis and a planar bottom surface that is parallel to the top surface. At least one wafer retention pocket is recessed in the wafer carrier body from the top surface. Each of the at least one wafer retention pocket includes a floor surface and a peripheral wall surface that surrounds the floor surface and defines a periphery of that wafer retention pocket. At least one thermal control feature includes an interior cavity or void formed in the wafer carrier body and is defined by interior surfaces of the wafer carrier body.

Abstract translation: 一种晶片载体组件，用于通过化学气相沉积（CVD）在一个或多个晶片上生长外延层的系统中，所述晶片载体组件包括围绕中心轴对称地形成的晶片载体主体，并且包括大致平坦的顶表面， 垂直于中心轴定位，平面底面平行于顶面。 至少一个晶片保留袋从顶表面凹陷在晶片载体主体中。 所述至少一个晶片保留袋中的每一个包括地板表面和围绕所述地板表面并限定所述晶片保持袋的周边的周壁表面。 至少一个热控制特征包括形成在晶片载体主体中并由晶片载体主体的内表面限定的内腔或空隙。

公开(公告)号：EP1771685B1

公开(公告)日：2015-04-15

申请号：EP04795660.2

申请日：2004-10-19

Applicant: VEECO INSTRUMENTS INC.

Inventor： BOGUSLAVSKIY, Vadim ,  GURARY, Alexander

IPC: C21D7/06 ,  C22F1/18 ,  C23F1/26 ,  F28F13/18

CPC classification number: C23F1/26 ,  C21D7/06 ,  C21D2261/00 ,  C22F1/18 ,  F28F13/18 ,  F28F2245/06

公开(公告)号：EP1771685A2

公开(公告)日：2007-04-11

申请号：EP04795660.2

申请日：2004-10-19

Applicant: VEECO INSTRUMENTS INC.

Inventor： BOGUSLAVSKIY, Vadim ,  GURARY, Alexander

IPC: F24C3/04

CPC classification number: C23F1/26 ,  C21D7/06 ,  C21D2261/00 ,  C22F1/18 ,  F28F13/18 ,  F28F2245/06

Abstract: A system and method is disclosed for increasing the emissivity of solid materials, wherein first the surface of the material is mechanically worked to create micro-level defects, and then etched to create a deep micro-rough surface morphology. In this manner, higher efficiencies and lower energy consumption can be obtained when these modified materials are used for heating elements. Heating elements made in accordance with this process thus operate at lower temperatures with longer lifetimes, when the improved heating elements are used with various heating devices.