公开(公告)号：EP1358368B1

公开(公告)日：2016-04-13

申请号：EP01964250.3

申请日：2001-08-21

Applicant: Veeco Instruments Inc.

Inventor： BOGUSLAVSKIY, Vadim ,  GURARY, Alexander

IPC: C30B25/02 ,  C30B25/08 ,  C30B25/12 ,  C30B25/14 ,  C23C16/458 ,  C23C16/46 ,  H01L21/687

CPC classification number: H01L21/68764 ,  C23C16/4584 ,  C23C16/46 ,  C30B25/12 ,  H01L21/68771 ,  H01L21/68785 ,  H01L21/68792 ,  Y10S117/90 ,  Y10T117/10

公开(公告)号：EP2659244A1

公开(公告)日：2013-11-06

申请号：EP11817495.2

申请日：2011-12-22

Applicant: Veeco Instruments Inc.

Inventor： GURARY, Alexander, I. ,  BOGUSLAVSKIY, Vadim ,  KRISHNAN, Sandeep ,  KING, Matthew

IPC: G01J5/00

CPC classification number: G01J5/0003 ,  G01J5/0007 ,  G01J2005/0048

Abstract: A method of in-situ pyrometer calibration for a wafer treatment reactor such as a CVD reactor 12 desirably includes the steps of positioning a calibrating pyrometer 80 at a first calibrating position A and heating the reactor until the reactor reaches a pyrometer calibration temperature. The method desirably further includes rotating a support element 40 about a rotational axis 42, and while the support element is rotating about the rotational axis, obtaining first operating temperature measurements from a first operating pyrometer 71 installed at a first operating position 1R, and obtaining first calibrating temperature measurements from the calibrating pyrometer 80. Both the calibrating pyrometer 80 and the first operating pyrometer 71 desirably are adapted to receive radiation from a first portion of the wafer support element 40 at a first radial distance D1 from the rotational axis 42 of the wafer support element.

公开(公告)号：EP2882884A1

公开(公告)日：2015-06-17

申请号：EP13753087.9

申请日：2013-08-05

Applicant: Plansee SE ,  Veeco Instruments Inc.

Inventor： MARTINZ, Hans-Peter ,  SULIK, Manfred ,  BOGUSLAVSKIY, Vadim

IPC: C23C16/46 ,  H05B3/14 ,  H05B3/24

CPC classification number: C23C16/46 ,  B22F5/006 ,  B22F7/004 ,  H05B3/12 ,  H05B3/143 ,  H05B3/22

Abstract: The invention is related to a heating element (10) comprising a heating body (20) which is directly covered at least partly with a porous sintered coating (30), wherein the heating body (20) the porous sintered coating (30) each comprises at least 90 % by weight of tungsten.

公开(公告)号：EP2539920A1

公开(公告)日：2013-01-02

申请号：EP10795886.0

申请日：2010-12-14

Applicant: Veeco Instruments Inc.

Inventor： GURARY, Alex ,  BELOUSOV, Mikhail ,  BOGUSLAVSKIY, Vadim ,  MITROVIC, Bojan

IPC: H01L21/00 ,  H01L21/687

CPC classification number: H01L22/26 ,  C23C16/45521 ,  C23C16/4584 ,  C23C16/52 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/67109 ,  H01L21/68785 ,  H01L21/68792

Abstract: Wafer treatment process and apparatus is provided with a wafer carrier (80) arranged to hold wafers (124) and to inject a fill gas into gaps (130) between the wafers and the wafer carrier. The apparatus is arranged to vary the composition, flow rate, or both of the fill gas so as to counteract undesired patterns of temperature non-uniformity of the wafers.

公开(公告)号：EP3379567A1

公开(公告)日：2018-09-26

申请号：EP18170707.6

申请日：2013-03-01

Applicant: Veeco Instruments Inc.

Inventor： KRISHNAN, Sandeep ,  MOY, Keng ,  GURARY, Alexander ,  KING, Matthew ,  BOGUSLAVSKIY, Vadim ,  KROMMENHOEK, Steven

IPC: H01L21/67 ,  H01L21/687 ,  C23C16/46 ,  C23C16/458

CPC classification number: C23C16/4584 ,  C23C16/4586 ,  C23C16/46 ,  H01L21/6719 ,  H01L21/68764 ,  H01L21/68771 ,  H01L21/68792

Abstract: In one aspect, the present invention provides a structure for a chemical vapor deposition reactor which includes a reaction chamber having an interior and a spindle mounted in the reaction chamber. The spindle has a shaft extending along a vertical rotational axis, the shaft having a top end, a tapered portion extending downwardly from the top end, and a main portion below the tapered portion. The tapered portion defines a tapered contact surface extending around the rotational axis and having progressively increasing diameter in the downward direction away from the top end. The structure further comprises a key projecting outwardly from the main portion of the shaft along a first transverse axis transverse to the vertical rotational axis.

公开(公告)号：EP2828886B1

公开(公告)日：2018-05-09

申请号：EP13763498.6

申请日：2013-03-01

Applicant: Veeco Instruments Inc.

Inventor： KRISHNAN, Sandeep ,  MOY, Keng ,  GURARY, Alexander, I. ,  KING, Matthew ,  BOGUSLAVSKIY, Vadim ,  KROMMENHOEK, Steven

IPC: C23C16/458 ,  C23C16/46 ,  H01L21/687 ,  H01L21/67

CPC classification number: C23C16/4584 ,  C23C16/4586 ,  C23C16/46 ,  H01L21/6719 ,  H01L21/68764 ,  H01L21/68771 ,  H01L21/68792

Abstract: A structure for a chemical vapor deposition reactor desirably includes a reaction chamber having an interior, a spindle mounted in the reaction chamber, and a wafer carrier releasably mounted onto the spindle for rotation therewith. The spindle desirably has a shaft extending along a vertical rotational axis and a key projecting outwardly from the shaft. The wafer carrier preferably has a body defining oppositely-facing top and bottom surfaces and at least one wafer-holding feature configured so that a wafer can be held therein with a surface of the wafer exposed at the top surface of the body. The wafer carrier desirably further has a recess extending into the body from the bottom surface of the body and a keyway projecting outwardly from a periphery of the recess along a first transverse axis. The shaft preferably is engaged in the recess and the key preferably is engaged into the keyway.

公开(公告)号：EP2882884B1

公开(公告)日：2016-11-30

申请号：EP13753087.9

申请日：2013-08-05

Applicant: Plansee SE ,  Veeco Instruments Inc.

Inventor： MARTINZ, Hans-Peter ,  SULIK, Manfred ,  BOGUSLAVSKIY, Vadim

IPC: C23C16/46 ,  H05B3/14 ,  H05B3/24

CPC classification number: C23C16/46 ,  B22F5/006 ,  B22F7/004 ,  H05B3/12 ,  H05B3/143 ,  H05B3/22

公开(公告)号：EP2882883A1

公开(公告)日：2015-06-17

申请号：EP13752822.0

申请日：2013-08-05

Applicant: Plansee SE ,  Veeco Instruments Inc.

Inventor： PLANKENSTEINER, Arno ,  FEIST, Christian ,  BOGUSLAVSKIY, Vadim ,  GURARY, Alexander I. ,  CHANG, Chenghung Paul

IPC: C23C16/458 ,  C23C16/46 ,  H01L21/67

CPC classification number: H05B1/00 ,  C23C16/4585 ,  C23C16/46 ,  H01L21/67115

Abstract: A terminal for mechanical support of a heating element, includes a base device, a mounting device, the mounting device adapted to support the heating element, and a support device connecting the base device to the mounting device, the support device allowing displacement of the heating element about a radial axis and less than about 10% displacement of the heating element about a tangential and/or axial axis.

Abstract translation: 一种用于加热元件的机械支撑的端子，包括基座装置，安装装置，适于支撑加热元件的安装装置，以及将基座装置连接到安装装置的支撑装置，支撑装置允许加热 元件围绕径向轴线并且围绕切线和/或轴向轴线小于约10％的加热元件的位移。

公开(公告)号：EP2882883B1

公开(公告)日：2017-10-04

申请号：EP13752822.0

申请日：2013-08-05

Applicant: Plansee SE ,  Veeco Instruments Inc.

Inventor： PLANKENSTEINER, Arno ,  FEIST, Christian ,  BOGUSLAVSKIY, Vadim ,  GURARY, Alexander I. ,  CHANG, Chenghung Paul

IPC: C23C16/458 ,  C23C16/46 ,  H01L21/67

CPC classification number: H05B1/00 ,  C23C16/4585 ,  C23C16/46 ,  H01L21/67115

Abstract: A terminal for mechanical support of a heating element, includes a base device, a mounting device, the mounting device adapted to support the heating element, and a support device connecting the base device to the mounting device, the support device allowing displacement of the heating element about a radial axis and less than about 10% displacement of the heating element about a tangential and/or axial axis.

Abstract translation: 一种用于加热元件的机械支撑的端子，包括基座装置，安装装置，适于支撑加热元件的安装装置以及将基座装置连接到安装装置的支撑装置，支撑装置允许加热 元件围绕径向轴线并小于加热元件围绕切向和/或轴向轴线的约10％的位移。

公开(公告)号：EP1771685B1

公开(公告)日：2015-04-15

申请号：EP04795660.2

申请日：2004-10-19

Applicant: VEECO INSTRUMENTS INC.

Inventor： BOGUSLAVSKIY, Vadim ,  GURARY, Alexander

IPC: C21D7/06 ,  C22F1/18 ,  C23F1/26 ,  F28F13/18

CPC classification number: C23F1/26 ,  C21D7/06 ,  C21D2261/00 ,  C22F1/18 ,  F28F13/18 ,  F28F2245/06