摘要:
A light emitting device (1) includes: three or more light emitting units (10, 20, 30) that individually include blue light emitting element, a wavelength range of the blue light emitting element accommodated in respective packages being different from each other. The light emitting device mixes output lights from the light emitting units (10, 20, 30) to output white light of a predetermined chromaticity. In an xy chromaticity diagram, the chromaticity of the output light from each of light emitting units (10, 20, 30) is located at a distance from the predetermined chromaticity. The difference between the chromaticity of the output light from each of the light emitting units (10, 20, 30) and the predetermined chromaticity is not greater than 0.04.
摘要:
A light emitting load driving apparatus includes a first switching element, a second switching element, and a gate driver, to drive first and second light emitting loads connected in series. The first switching element, when in an ON state, bypasses a current to be passed to the first light emitting load. The second switching element, when in an ON state, bypasses a current to be passed to the second light emitting load. The gate driver reduces at least one of an overshoot current caused when the first and second switching elements are simultaneously turned on and an undershoot current caused when the first and second switching elements are simultaneously turned off.
摘要:
A DC-DC converter includes a coupling transformer that has windings 11 and 12, switches (Tr1, Tr2) that are connected through the windings to both ends of a DC power source Vi, a series circuit that is connected to both ends of each of the switches and includes a diode and a smoothing capacitor, and a controller 100 that alternately turns on the switches Tr1 and Tr2 and simultaneously turns on the switches Tr1 and Tr2 for a predetermined overlapping period on every half cycle. The coupling transformer 1 includes an I-shaped core 4, two E-shaped cores 2 and 3 holding the I-shaped core 4 between them, and a gap 5 formed between each of center legs 2a and 3a of the E-shaped cores 2 and 3 and the I-shaped core 4. The windings 11 and 12 are wound around the I-shaped core 4.
摘要:
A semiconductor substrate (21) of an IGFET (20) has drain regions (34) and (35), a p-type first body region (36), a p - -type second body region (37), an n-type first source region (38), and an n + -type second source region (39), and additionally has multiple pairs of trenches (31) that constitute an IGFET cell. A gate insulating film (25) and a gate electrode (24) are provided inside the trenches (31). A source electrode 23 is in Schottky contact with the second body region (37). A pn junction (43) between the second drain region (35) and the first body region (36) is exposed to one of the main surfaces of the semiconductor substrate. The first body region (36), the second body region (37), and the first source region (38) are also provided outside the trenches (31), and an n-type protective semiconductor region (40) is provided. The trenches (31) contribute to miniaturization of the IGFET and to lowering of the on-resistance. The reverse breakdown voltage of the IGFET can be improved by the reduction in contact area between the second body region (37) and the source electrode (23) to the outside from the trenches (31).
摘要:
A switching device (10) has a main IGFET (11) having a Schottky barrier diode D3 for blocking an inverse current built therein, a protective switch means (12), and a protective switch control means (13). The protective switch means (12) is connected in between a drain electrode D and a gate electrode G of the main IGFET (11). The protective switch control means (13) turns on the protective switch means (12) when an inverse voltage is impressed to the main IGFET (ill). Thereby, the main IGFET (11) is protected from the inverse voltage.
摘要:
The present invention includes: a main switch Tr1 connected to two ends of a DC power supply Vi via a first primary winding 1a and a second primary winding 1b, connected to the first primary winding in series, of a transformer T1; a series circuit connected to the two ends of the main switch, and including a reactor L1, a diode D1, a smoothing capacitor Co and a hoist winding 1c connected to the second primary winding in series; a series circuit connected to the two ends of the main switch, and including a diode D2, a diode D3 and the smoothing capacitor; a control circuit 10 to turn on and off the main switch; a soft-switching circuit Da1,Tral,Lal,Cal to cause the main switch to perform a soft-switching operation each time the main switch turns on; and a switching control circuit 20 to switch the soft-switching circuit between operating and non-operating modes in accordance with the state of a load.
摘要:
A semiconductor device (10) includes: an base substance (15) having a ferromagnetic material; a first semiconductor chip (11) and a second semiconductor chip (12) installed on the base substance (15); a first coil (131) installed on the base substance (15) and electrically connected to the first semiconductor chip (11); a second coil (132) installed on the first coil (131), electromagnetically connected to the first coil (131) and electrically connected to the second semiconductor chip (12); a transformer assembly (18) made of a ferromagnetic material and installed on the base substance (15), and a sealing body. The transformer assembly (18) includes a first core section (181), a first side shield section (182), and a first upper shield section (183).