METHOD OF MEASURING POINT DEFECT DISTRIBUTION OF SILICON SINGLE CRYSTAL INGOT
    8.
    发明公开
    METHOD OF MEASURING POINT DEFECT DISTRIBUTION OF SILICON SINGLE CRYSTAL INGOT 有权
    VERFAHREN ZUR BESTIMMUNG DERPUNKTDEFEKTVERTEILUNG EINES SILICIUMEINKRISTALLSTABS

    公开(公告)号:EP1559812A1

    公开(公告)日:2005-08-03

    申请号:EP03756681.7

    申请日:2003-10-17

    IPC分类号: C30B29/06 G01N27/04

    摘要: A single crystal ingot is cut to an axial direction so as to including the central axis, a sample for measurement including regions [V], [Pv], [Pi] and [I] is prepared, and a first sample and second sample are prepared by dividing the sample into two so as to be symmetrical against the central axis. A first transition metal is metal-stained on the surface of the first sample and a second transition metal different from the first transition metal is metal-stained on the surface of the second sample. The first and second samples stained with the metals are thermally treated and the first and second transition metals are diffused into the inside of the samples. Recombination lifetimes in the whole of the first and second samples are respectively measured, and the vertical measurement of the first sample is overlapped on the vertical measurement of the second sample. The boundary between the regions [Pi] and [I] and the boundary between the regions [V] and [Pv] are respectively specified from the overlapped result.

    摘要翻译: 将单晶锭切割成轴向以包括中心轴,制备包括区域ÄVÜ,ÄPvÜ,ÄPiÜ和ÄIÜ的测量样品,通过将样品分成两部分制备第一样品和第二样品 以相对于中心轴线对称。 第一过渡金属在第一样品的表面被金属染色,并且与第一过渡金属不同的第二过渡金属在第二样品的表面被金属染色。 用金属染色的第一和第二样品被热处理,第一和第二过渡金属被扩散到样品的内部。 分别测量整个第一和第二样品中的重组寿命,并且第一样品的垂直测量值与第二样品的垂直测量重叠。 区域ÄPiÜ和ÄIÜ之间的边界以及区域ÄVÜ和ÄPvÜ之间的边界分别从重叠结果中指定。