公开(公告)号：EP1550144A4

公开(公告)日：2009-07-08

申请号：EP03749734

申请日：2003-09-19

申请人： TEL EPION INC

发明人： MACK MICHAEL E

IPC分类号： C23C16/452 ,  H01J3/14 ,  H01J27/00 ,  H01J37/02 ,  H01J37/08 ,  H01J37/317 ,  C23C14/35

CPC分类号： H01J37/026 ,  C23C16/452 ,  H01J37/08 ,  H01J37/317 ,  H01J2237/0041 ,  H01J2237/0812

摘要： System (350) and method of gas-cluster ion beam processing is realized by incorporating improved beam and workpiece neutralizing components (122). Larger GCIB current transport is enabled by low energy electron neutralization of space charge of the GCIB. The larger currents transport greater quantities of gas in the GCIB. A vented faraday cup beam measurement system (302) maintains beam dosimetry accuracy despite the high gas transport load.

公开(公告)号：EP1299903A4

公开(公告)日：2008-05-21

申请号：EP01910460

申请日：2001-02-08

申请人： TEL EPION INC

发明人： FENNER DAVID B

IPC分类号： H01L21/314 ,  C23C14/00 ,  C23C14/02 ,  H01L21/02 ,  H01L21/28 ,  H01L21/306 ,  H01L21/311 ,  H01L21/316 ,  H01L21/318 ,  H01L21/8242 ,  H01L21/8246 ,  H01L27/105 ,  H01L27/108 ,  H01L29/51

CPC分类号： H01L21/28194 ,  C23C14/0031 ,  C23C14/022 ,  H01J2237/0812 ,  H01L21/02054 ,  H01L21/0206 ,  H01L21/0217 ,  H01L21/02172 ,  H01L21/02247 ,  H01L21/02263 ,  H01L21/02299 ,  H01L21/02307 ,  H01L21/28202 ,  H01L21/28211 ,  H01L21/31111 ,  H01L21/31604 ,  H01L21/31662 ,  H01L21/31683 ,  H01L21/3185 ,  H01L28/40 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518

摘要： Methods are disclosed for gas-cluster ion-beam deposition of thin films on silicon wafers rendered free of native oxides by termination of the surface bonds and subsequent reactive deposition. Hydrogen termination of the surface of silicon renders it inert to reoxidation from oxygen-containing enviornmental gasses, even those found as residue in vacuum systems, such as those used to deposit films. Nitrogen termination improves the interface with overlying metal-oxide thin films. The film is formed in intimate contact with the silicon crystal surface forming a nearly ideal interface.

公开(公告)号：EP1305452A4

公开(公告)日：2007-12-26

申请号：EP01953623

申请日：2001-07-13

申请人： TEL EPION INC

发明人： MACK MICHAEL E ,  TORTI RICHARD P

IPC分类号： H01J49/40 ,  C23C14/22 ,  C23C14/52 ,  C23C14/54 ,  H01J37/304 ,  H01J49/06 ,  C23C14/00 ,  C23F1/04 ,  H01J37/244

CPC分类号： C23C14/544 ,  C23C14/221 ,  C23C14/52 ,  H01J37/304 ,  H01J2237/0812

摘要： Methods and apparatus for measuring the distribution of cluster ion sizes in a gas cluster ion beam (GCIB) (202) and for determining the mass distribution and mass flow of cluster ions in a GCIB processing system (200) without necessitating the rejection of a portion of the beam (202) through magnetic or electrostatic mass analysis. The invention uses time-of-flight measurement means (226) to estimate or monitor cluster ion size distribution either before or during processing of a workpiece (210). The measured information is displayed and incorporated in automated control of a GCIB processing system.

摘要翻译： 用于测量气体团簇离子束（GCIB）（202）中的团簇离子尺寸的分布以及用于确定GCIB处理系统（200）中的团簇离子的质量分布和质量流量的方法和装置，而不需要拒绝部分 （202）通过磁性或静电质量分析。 本发明使用飞行时间测量装置（226）来在加工工件（210）之前或期间估计或监测团簇离子尺寸分布。 测量的信息被显示并且被并入GCIB处理系统的自动化控制中。

公开(公告)号：EP3189540A1

公开(公告)日：2017-07-12

申请号：EP15837426.4

申请日：2015-09-01

申请人： Tel Epion Inc.

发明人： GRAF, Michael ,  RUSSELL, Noel ,  GWINN, Matthew C. ,  LEITH, Allen J.

IPC分类号： H01L21/205 ,  H01L21/265

CPC分类号： H01L21/3065 ,  H01J27/026 ,  H01J37/317 ,  H01J2237/006 ,  H01J2237/0812 ,  H01J2237/16 ,  H01J2237/31732 ,  H01J2237/3174 ,  H01L21/31116 ,  H01L21/32136

摘要： A beam processing system and method of operating are described. In particular, the beam processing system includes a beam source having a nozzle assembly that is configured to introduce a primary gas through the nozzle assembly to a vacuum vessel in order to produce a gaseous beam, such as a gas cluster beam, and optionally, an ionizer positioned downstream from the nozzle assembly, and configured to ionize the gaseous beam to produce an ionized gaseous beam. The beam processing system further includes a process chamber within which a substrate is positioned for treatment by the gaseous beam, and a secondary gas source, wherein the secondary gas source includes a secondary gas supply system that delivers a secondary gas, and a secondary gas controller that operatively controls the flow of the secondary gas injected into the beam processing system downstream of the nozzle assembly.

摘要翻译： 描述了光束处理系统和操作方法。 具体而言，束处理系统包括具有喷嘴组件的束源，该喷嘴组件被配置为将通过喷嘴组件的主气体引入真空容器以产生气体束如气体束束，并且可选地包括 电离器，其定位在喷嘴组件的下游，并且被配置为使气体束电离以产生电离的气体束。 该束处理系统还包括：处理室，在该处理室中，衬底被定位以用于由气体束处理;以及第二气体源，其中第二气体源包括输送第二气体的第二气体供给系统和第二气体控制器 其可操作地控制喷射到喷嘴组件下游的射束处理系统中的二次气体的流动。

公开(公告)号：EP3178105A2

公开(公告)日：2017-06-14

申请号：EP15829520.4

申请日：2015-07-31

申请人： Tel Epion Inc.

发明人： GWINN, Matthew, C. ,  FREYTSIS, Avrum ,  BECKER, Robert, K.

IPC分类号： H01J37/08 ,  H01J37/317

CPC分类号： H01J37/08 ,  H01J37/305 ,  H01J2237/006 ,  H01J2237/0206 ,  H01J2237/061 ,  H01J2237/0812 ,  H01J2237/0822 ,  H01J2237/3151

摘要： A nozzle assembly used for performing gas cluster ion beam (GCIB) etch processing of various materials is described. In particular, the nozzle assembly includes two or more conical nozzles that are aligned such that they are both used to generate the same GCIB. The first conical nozzle may include the throat that initially forms the GCIB and the second nozzle may form a larger conical cavity that may be appended to the first conical nozzle. A transition region may be disposed between the two conical nozzles that may substantially cylindrical and slightly larger than the largest diameter of the first conical nozzle.

摘要翻译： 描述了用于执行各种材料的气体簇离子束（GCIB）蚀刻处理的喷嘴组件。 特别地，喷嘴组件包括两个或更多个对齐的锥形喷嘴，使得它们都用于产生相同的GCIB。 第一锥形喷嘴可以包括最初形成GCIB的喉部，并且第二喷嘴可以形成可以附加到第一锥形喷嘴的较大的锥形腔。 过渡区域可以设置在两个圆锥形喷嘴之间，所述两个圆锥形喷嘴可以基本上圆柱形并且略大于第一锥形喷嘴的最大直径。

公开(公告)号：EP1807859A2

公开(公告)日：2007-07-18

申请号：EP05820956.0

申请日：2005-10-25

申请人： TEL Epion Inc.

发明人： MACK, Michael, E.

IPC分类号： H01J27/02 ,  H01J27/00 ,  H01J49/00

CPC分类号： H01J27/08 ,  H01J27/026 ,  H01J37/08 ,  H01J37/3053 ,  H01J2237/0041 ,  H01J2237/0812

摘要： An ionizer (640, Fig.10) for forming a gas-cluster ion beam is disclosed (Fig. 10) including inlet and outlet ends partially defining an ionization region traversed by a gas-cluster jet and one or more plasma electron source(s) (642) for providing electrons (644) to the ionizing region for ionizing at least a portion of the gas-clusters to form a gas-cluster ion beam. One or more sets of substantially linear rod electrodes (452) may be disposed substantially parallel to and in one or more corresponding partial, substantially cylindrical pattern(s) about die gas-cluster jet axis, wherein some sets are arranged in substantially concentric patterns with differing radii (458, 464). In certain embodiments, the ionizer includes one or more substantially linear thermionic filaments disposed substantially parallel to the gas-cluster jet axis, heating means, electrical biasing means to judiciously bias sets of the linear rod electrodes with respect to the thermionic filaments to achieve electron repulsion.

公开(公告)号：EP3178105A4

公开(公告)日：2018-04-25

申请号：EP15829520

申请日：2015-07-31

申请人： TEL EPION INC

发明人： GWINN MATTHEW C ,  FREYTSIS AVRUM ,  BECKER ROBERT K

IPC分类号： H01J37/08 ,  H01J27/02 ,  H01J37/305 ,  H01J37/317 ,  H01L21/265

CPC分类号： H01J37/08 ,  B81C2201/0181 ,  H01J37/305 ,  H01J2237/006 ,  H01J2237/0206 ,  H01J2237/061 ,  H01J2237/0812 ,  H01J2237/0822 ,  H01J2237/3151

摘要： A nozzle assembly used for performing gas cluster ion beam (GCIB) etch processing of various materials is described. In particular, the nozzle assembly includes two or more conical nozzles that are aligned such that they are both used to generate the same GCIB. The first conical nozzle may include the throat that initially forms the GCIB and the second nozzle may form a larger conical cavity that may be appended to the first conical nozzle. A transition region may be disposed between the two conical nozzles that may substantially cylindrical and slightly larger than the largest diameter of the first conical nozzle.

公开(公告)号：EP1303866B1

公开(公告)日：2009-12-09

申请号：EP01965832.7

申请日：2001-07-10

申请人： TEL Epion Inc.

发明人： ALLEN, Lisa, P. ,  FENNER, David, B.

IPC分类号： H01J37/305

CPC分类号： H01L21/67069 ,  H01J37/317 ,  H01J2237/0812 ,  H01J2237/336 ,  H01L21/3065 ,  H01L21/32131 ,  H01L21/32132 ,  H01L22/12 ,  H01L22/20

摘要： The present invention provides apparatus and methods to carry out the task of both reducing the surface roughness (smoothing) and improving the thickness uniformity of, preferably, but not limited thereto, the top silicon film of a silicon-on-insulator (SOI) wafer or similar thin-film electronic and photonic materials (workpiece). It also provides a method and apparatus for smoothing the surface of a (preferably) SOI wafer (workpiece) and for making the surface of the silicon film of a (preferably) SOI wafer cleaner and more free from contaminants.

公开(公告)号：EP1200980B8

公开(公告)日：2007-05-23

申请号：EP00947375.2

申请日：2000-07-14

申请人： TEL Epion Inc.

发明人： FENNER, David, B.

IPC分类号： H01J37/317 ,  C23C14/02 ,  C23C14/22

CPC分类号： H01J37/317 ,  H01J2237/0812 ,  H01L21/31051 ,  H01L21/32115

摘要： A method and apparatus for adapting the nature of an ion beam during processing of the surface of a solid workpiece so as to improve the reduction of surface roughness (smoothing) by using a GCIB. In addition, the invention provides for surface smoothing in combination with etching to predetermined depths and surface contamination removal. Advantages are minimum required processing time, minimum remaining roughness of the final surface, and reduction in the amount of material that must be removed in order to attain a desired level of smoothness.

摘要翻译： 本发明提供一种在固体工件表面的加工过程中适应离子束的性质，从而通过使用GCIB来改善表面粗糙度（平滑）的降低的方法和装置。 此外，本发明提供表面平滑化，结合蚀刻至预定深度和去除表面污染物。 优点是所需的处理时间最短，最终表面的最小剩余粗糙度以及为了获得所需平滑度而必须去除的材料量的减少。

公开(公告)号：EP1815507A4

公开(公告)日：2010-10-06

申请号：EP05848887

申请日：2005-11-08

申请人： TEL EPION INC

发明人： GEFFKEN ROBERT M ,  HAUTALA JOHN J ,  SHERMAN STEVEN R ,  LEARN ARTHUR J

IPC分类号： H01L21/44 ,  H01L21/768 ,  H01L23/40 ,  H01L23/48 ,  H01L23/52

CPC分类号： H01L21/76867 ,  C23C14/0605 ,  C23C14/0635 ,  C23C14/0652 ,  C23C14/221 ,  C23C16/26 ,  C23C16/325 ,  C23C16/345 ,  C23C16/513 ,  H01J2237/0812 ,  H01L21/02074 ,  H01L21/02301 ,  H01L21/02304 ,  H01L21/321 ,  H01L21/32136 ,  H01L21/76822 ,  H01L21/76825 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76865 ,  H01L21/76883 ,  H01L21/76886 ,  H01L2924/0002 ,  H01L2924/00